DEFECT REDUCTION RINSE SOLUTION CONTAINING AMMONIUM SALTS OF SULFOESTERS

    公开(公告)号:EP3322787A1

    公开(公告)日:2018-05-23

    申请号:EP16733605.6

    申请日:2016-07-01

    申请人: BASF SE

    摘要: The present invention relates to the use of a composition comprising one or more ammonium salt(s) of one or more compounds selected from the group consisting of sulfobutanedioic acid diester(s), (sulfomethyl)-butanedioic acid diester(s), methyl-sulfobutanedioic acid diester(s), sulfoglutaric acid diester(s), and sulfotricarballic acid triester(s), for cleaning or rinsing a product comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm and below. The invention also relates to a corresponding method of making a cleaned or rinsed product comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm or below. The invention also relates to a solution with color of HAZEN number below 1000 and/or a turbidity in the range of from 0.08 to 10 NTU, wherein the solution comprises water and one or more ammonium salt(s) and optionally one or more organic solvent compounds. The invention also relates to a method of making a corresponding solution.

    COMPOSITIONS FOR ANTI PATTERN COLLAPSE TREATMENT COMPRISING GEMINI ADDITIVES
    9.
    发明公开
    COMPOSITIONS FOR ANTI PATTERN COLLAPSE TREATMENT COMPRISING GEMINI ADDITIVES 有权
    GEMINI-ZUSÄTZEENTHALTENDE ZUSAMMENSETZUNGEN ZUR VERMEIDUNG EINES STRUKTURSZUSAMMENBRUCHS

    公开(公告)号:EP2872948A1

    公开(公告)日:2015-05-20

    申请号:EP13816602.0

    申请日:2013-07-01

    申请人: BASF SE

    IPC分类号: G03F7/32 C11D1/40

    摘要: The use of a Gemini additive in compositions for treating semiconductor substrates is provided. The compositions are useful in processes for manufacturing integrated circuits devices, optical devices, micromachines and mechanical precision devices, in particular for developing photoresists and post etch residue removal to avoid pattern collapse.

    摘要翻译: 一种减少半导体衬底的缺陷的方法,其中在开发光致抗蚀剂或光刻掩模之后,用包含通式I的双子添加剂的水性组合物漂洗衬底,其中X是二价基团,R1,R2,R3和 R4是取代或未取代的单价基团,n是1至5的整数,或1至10000个取决于R3和R4,z是整数,其被选择为使得整个表面活性剂不带电,Z是反 - 离子。