SUBSTRATE PROCESSING APPARATUS
    5.
    发明公开
    SUBSTRATE PROCESSING APPARATUS 有权
    SUBSTRATBEARBEITUNGSVORRICHTUNG

    公开(公告)号:EP2976444A1

    公开(公告)日:2016-01-27

    申请号:EP14715704.4

    申请日:2014-03-18

    摘要: A substrate processing apparatus (100) comprising a process tunnel (102) including a lower tunnel wall (122), an upper tunnel wall (142), and two lateral tunnel walls (128), said tunnel walls being configured to bound a process tunnel space (104) that extends in a longitudinal transport direction (7) and that is suitable for accommodating at least one substantially planar substrate (180) oriented parallel to the upper and lower tunnel walls (122, 142), the process tunnel being divided in a lower tunnel body (120) comprising the lower tunnel wall and an upper tunnel body (140) comprising the upper tunnel wall, which tunnel bodies (120, 140) are separably joinable to each other along at least one longitudinally extending join (160), such that they are mutually movable between a closed configuration in which the tunnel walls (122, 128, 42) bound the process tunnel space (104) and an open configuration that enables lateral maintenance access to an interior of the process tunnel.

    摘要翻译: 一种衬底处理设备(100),包括包括下部隧道壁(122),上部隧道壁(142)和两个横向隧道壁(128)的工艺隧道(102),所述隧道壁被构造成将工艺隧道 空间(104),其沿纵向输送方向(7)延伸并且适于容纳平行于上部和下部隧道壁(122,142)定向的至少一个基本平坦的基板(180),所述过程隧道被分为 包括所述下部隧道壁的下部隧道主体(120)和包括所述上部隧道壁的上部隧道主体(140),所述隧道主体(120,140)沿着至少一个纵向延伸的连接(160)可分离地彼此连接, 使得它们在其中结合有过程管道空间(104)的隧道壁(122,128,42)和允许侧向维护进入过程管道内部的打开构造的关闭构造之间可相互移动。

    APPARATUS AND METHOD FOR ATOMIC LAYER DEPOSITION
    8.
    发明公开
    APPARATUS AND METHOD FOR ATOMIC LAYER DEPOSITION 有权
    用于原子层沉积的装置和方法

    公开(公告)号:EP2670883A1

    公开(公告)日:2013-12-11

    申请号:EP12704563.1

    申请日:2012-01-31

    摘要: Apparatus for atomic layer deposition on a surface of a sheeted substrate, comprising: an injector head comprising a deposition space provided with a precursor supply and a precursor drain; said supply and drain arranged for providing a precursor gas flow from the precursor supply via the deposition space to the precursor drain; the deposition space in use being bounded by the injector head and the substrate surface; a gas bearing comprising a bearing gas injector, arranged for injecting a bearing gas between the injector head and the substrate surface, the bearing gas thus forming a gas-bearing; a conveying system providing relative movement of the substrate and the injector head along a plane of the substrate to form a conveying plane along which the substrate is conveyed. A support part arranged opposite the injector head, the support part constructed to provide a gas bearing pressure arrangement that balances the injector head gas-bearing in the conveying plane, so that the substrate is held supportless by said gas bearing pressure arrangement in between the injector head and the support part.

    摘要翻译: 1。一种用于在片状基底的表面上进行原子层沉积的设备,包括:注入头,所述注入头包括设置有前体供应和前驱排放的沉积空间; 所述供应和排出装置设置用于提供从前体供应源经由沉积空间到达前体排出口的前体气体流; 使用中的沉积空间由注射器头部和基板表面界定; 包括轴承气体喷射器的气体轴承,所述轴承气体喷射器布置成用于在所述喷射器头和所述衬底表面之间注入轴承气体,所述轴承气体因此形成气体轴承; 输送系统,所述输送系统提供所述衬底和所述注射器头沿着所述衬底的平面的相对移动以形成所述衬底沿着其传送的传送平面。 支撑部分与喷射器头相对设置,支撑部分构造成提供气体轴承压力布置,该布置使喷射器头部气体轴承在输送平面中平衡,使得基板通过所述气体轴承压力布置保持在喷射器之间 头部和支撑部分。