摘要:
A method for manufacturing an anti-reflection film of a display device comprises steps of forming a first layer (2) which is an electrically-conductive thin film having a first refractive index, and which is deposited on an outer surface of a glass face panel (1), forming a second layer (3) which is a thin film having a second refractive index lower than said first refractive index, and which is deposited on an outer surface of said first layer (2), and forming a third layer (4) which is deposited on said second layer (3), and which has a large number of concave regions (6) each surrounded by convex regions (5) on an exposed surface of said display device. According to the invention said first layer (2), said second layer (3) and said third layer (4) form said antireflection film which has a luminous reflectance of 1.5% or less, and a reflectance of 3% or less between the wavelength of 436 nm and 700 nm.
摘要:
A liquid primer is misted, flowed into a deposition chamber (2) and deposited on a substrate (5). A liquid precursor (64) is misted, flowed into a deposition chamber (2) and deposited on the substrate (5). The primer and precursor are dried to form a solid thin film, which is then annealed to form a part of an electronic component (1112) in an integrated circuit (1110), such as the dielectric (1130) in a memory cell. The primer is a solvent, and the precursor includes a metal carboxylate, a metal alkoxide, or a metal alkoxycarboxylate in a precursor solvent. Preferably, the primer and the precursor solvent are the same solvent, such as 2-methodyethanol, xylenes, n-butyl acetate or hexymethyl-disilazane.
摘要:
The present invention has an object of providing a method for manufacturing a semiconductor device wherein an underlying silicon substrate or polycrystalline silicon film is less subject to etching during ashing. A method for manufacturing a semiconductor device according to the present invention comprises the steps of: covering a predetermined portion of an insulating film (2) on the silicon substrate (1) or the polycrystalline silicon film with a photoresist (3); removing a portion of said insulating film (2) not covered with the photoresist by dry etching using an etching gas containing carbon and fluorine; and removing a fluorocarbon film (6) deposited on the surface of the substrate and said photoresist 3 by ashing using at least an oxygen gas while controlling the temperature at 100°C or lower, wherein the underlying silicon substrate or polycrystalline silicon film is less subject to etching during the ashing.
摘要:
A multifunctional switching apparatus, preferably used as a steering switch (12), comprises a first switching section (13A) selecting a specific combination from a plurality of combinations resulting from any possible combination between operating functions of a second switching section (13B) and operating functions of a third switching section (14A). The second and third switching sections are operable independent of each other in the specific combination selected by the first switching section. One operating key (13) is provided to control a plurality of switching sections (13A, 13B). A display of the operation key (13) is provided to make the judgement of operational function of each switch section easy.
摘要:
A compensating device for raster distortion is provided, which can compensate a raster distortion, preferably including an inner pincushion distortion, by a simple and inexpensive configuration. The compensating device comprises an electromagnet (10) and a pair of permanent magnets (14). The electromagnet (10) is disposed outside of a deflection yoke and at a center portion of a side of a beam-deflection area (31), and generates magnetic poles in the direction along the side. The pair of permanent magnets (14) are disposed beyond the ends of the side, and generate magnetic poles aligned with the magnetic poles of the electromagnet (10).
摘要:
In a field effect transistor 100 , an InAlAs buffer layer 11 , an InGaAs channel layer 12 , an InAlAs spacer layer 13 , an AlGaAs carrier supplying layer 14 , an InAlAs Schottky layer 15 , and an InGaAs cap layer 16 are provided on an InP substrate 10 in this order. Furthermore, a source electrode 17s , a drain electrode 17d and a gate electrode 18 are formed on the layered structure at prescribed positions. The carrier supplying layer 14 is made of a material that does not cause the silicon, contained therein as a dopant, to be terminated by fluorine. Thus, the field effect transistor 100 having a high transconductance can be formed without causing decrease in a drain current.
摘要:
A lead has a thick part having a thickness of 0. 2 mm and a thin part having a thickness of 0. 1 mm. The thin part is formed having a greater width than the thick part for preventing the lead from slipping from a resin. A semiconductor chip is fixed on the thin part using a conductive adhesive. A lateral surface of the thick part and a lateral surface of the resin are simultaneously formed by a single cut so that the thick part's lateral surface is located at a lower end area of the resin's lateral surface and these surfaces are exposed forming the same plane. A bottom surface of the thick part projects by from 0. 03 mm to 0. 05 mm from the resin bottom surface to meet lead stand-off specifications. Thick parts of other leads electrically connected with electrodes on the semiconductor chip with Au wires, are likewise exposed at the resin lateral surface and project from the resin bottom surface. Such arrangements realize high density mounting of electronic components onto a printed board.
摘要:
In pressing and molding a shadow mask or the like, press-molding oil containing alkyl carbonate shown in the following Chemical Formula as an active ingredient is coated on a press mold. After pressing and molding a metallic material with the press mold, the press-molding oil is washed and removed with warm water. Alternatively, the oil is thermally decomposed. As a result, less than about 10µ g/cm 2 oil is left as residue on the product. where a and b are an integer from one to six; x and y are an integer from 0 to 30; R 1 and R 2 are an alkyl group, cycloalkyl group, alkylphenyl group, benzyl group or alkylbenzyl group having from one to thirty carbon atoms and straight or branched alkyl chains.
摘要:
A lead frame 24 comprising an inner lead 22 and outer lead 23 is sealingly filled from a through-hole into a package 21. A CCD chip 27 is inserted from an inlet 26 into the package 21. An electrode pad 28 is connected to the inner lead 22 via a bump 29 to complete an optical positioning and an electrical connection, then the positions of these components are fixed by glue. As a result, a solid-state image sensing apparatus can be manufactured at a low cost, and an accurate positioning can be realized. Thus, the solid-state image sensing apparatus can be employed to a video camera of high quality picture to reproduce vivid colors and fine pictures.
摘要:
A deflection yoke which is capable of sufficiently reducing a high order raster distortion (gullwing) at the upper and lower edges of the screen without damaging coil wires of the screen side flange portion at the time of winding the horizontal deflection coil. A deflection yoke is formed with a saddle shaped horizontal deflection coil (30), a saddle shaped vertical deflection coil (31) located outside the horizontal deflection coil, and a ferrite core (32) located outside the vertical deflection coil. The center portion of the screen side flange portion of one selected from the group consisting of the saddle (24) shaped horizontal deflection coil and the saddle shaped vertical deflection coil forms a projection towards the screen side.