公开(公告)号：EP3599290A2

公开(公告)日：2020-01-29

申请号：EP19186736.5

申请日：2019-07-17

申请人： LG ELECTRONICS INC.

发明人： CHANG, Wonjae ,  AHN, Junyong ,  LEE, Hyunho

IPC分类号： C23C16/24 ,  C23C16/455 ,  C23C16/458 ,  C23C16/56 ,  H01L21/02 ,  H01L31/18

摘要： Provided is a Chemical vapor deposition (CVD) equipment including a chamber having an inner space, a plurality of silicon wafers disposed in the inner space of the chamber in an upright position; and a plurality of shower nozzles configured to inject a mixed gas composed of a silicon deposition gas and an impurity gas toward each side edge of the plurality of wafers. The plurality of shower nozzles can be disposed at both sides of the plurality of the plurality of silicon wafers.

公开(公告)号：EP3520146A1

公开(公告)日：2019-08-07

申请号：EP17781039.7

申请日：2017-09-27

申请人： Enel Green Power S.p.A.

发明人： GERARDI, Cosimo ,  BATTAGLIA, Anna

IPC分类号： H01L31/0368 ,  C23C16/24 ,  C23C16/44 ,  H01L21/02 ,  H01L31/075 ,  H01L31/20 ,  H01L31/065

公开(公告)号：EP2451991B1

公开(公告)日：2019-07-03

申请号：EP10797882.7

申请日：2010-07-08

申请人： Aixtron SE

发明人： SAVAS, Stephen, Edward ,  GALEWSKI, Carl ,  WIESNOSKI, Allan, B. ,  MANTRIPRAGADA, Sai ,  JOH, Sooyun

IPC分类号： C23C16/505 ,  C23F1/00 ,  H05H1/24 ,  B05D1/36 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/503 ,  H01J37/32 ,  H01L21/67 ,  C23C16/46 ,  C23C16/54 ,  C23C16/26

公开(公告)号：EP3420116A1

公开(公告)日：2019-01-02

申请号：EP17707518.1

申请日：2017-02-23

申请人： Wacker Chemie AG

发明人： PEDRON, Simon

IPC分类号： C23C16/24 ,  C23C16/32 ,  C23C16/34 ,  C23C16/44 ,  C23C16/442

CPC分类号： C23C16/4404 ,  B01J8/1872 ,  B01J19/02 ,  B01J2219/0218 ,  C01B33/03 ,  C23C16/24 ,  C23C16/325 ,  C23C16/345 ,  C23C16/442

公开(公告)号：EP3221263B1

公开(公告)日：2018-09-19

申请号：EP15795134.4

申请日：2015-11-06

申请人： Wacker Chemie AG

发明人： KRAUS, Heinz ,  KUTZA, Christian ,  RENNSCHMID, Dominik

IPC分类号： C01B33/035 ,  C23C16/458 ,  C23C16/24 ,  C23C16/44

CPC分类号： C23C16/24 ,  C01B33/035 ,  C23C16/4418 ,  C23C16/4581 ,  C23C16/46

公开(公告)号：EP1826174B1

公开(公告)日：2018-09-12

申请号：EP07100826.2

申请日：2007-01-19

申请人： OMRON CORPORATION

发明人： Kasai, Takashi ,  Wakabayashi, Shuichi

IPC分类号： B81B3/00 ,  C23C16/24

CPC分类号： B81B3/0072 ,  B81C2201/0167 ,  C23C16/24 ,  C23C16/56

摘要： A method for forming a thin film structure, which has small tensile stress due to controlled mechanical stress, and is made to be conductive, is provided. A lower film including polysilicon thin film is formed on a substrate such as Si substrate, then an impurity such as P is doped into the lower film and thermally diffused, thereby the lower film is made conductive. Then, an upper film is deposited on the lower film, the upper film including a polysilicon thin film that is simply deposited and not made to be conductive. The upper film has a tensile stress in an approximately the same level as compressive stress of the lower film, and a thin film structure as a whole, the structure including the lower film and the upper film, is adjusted to have small tensile stress.

公开(公告)号：EP3020850B1

公开(公告)日：2018-08-29

申请号：EP15199821.8

申请日：2010-07-08

申请人： Aixtron SE

发明人： Savas, Stephen Edward ,  Galewski, Carl ,  Wiesnoski, Allan B. ,  Mantripragada, Sai ,  Joh, Sooyun

IPC分类号： C23F1/00 ,  H05H1/24 ,  B05D1/36 ,  C23C16/26 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/503 ,  H01J37/32 ,  H01L21/67 ,  C23C16/46 ,  C23C16/54 ,  C23C16/505

CPC分类号： H01J37/32541 ,  C23C16/24 ,  C23C16/26 ,  C23C16/345 ,  C23C16/40 ,  C23C16/401 ,  C23C16/407 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45519 ,  C23C16/45591 ,  C23C16/466 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/545 ,  H01J37/32036 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/67069

摘要： Apparatus for plasma processing of a substrate comprising: a power supply; at least one plasma generating unit (PGU) including at least two electrodes, including at least a first electrode and a second electrode, wherein the first electrode is a powered electrode coupled to the power supply; a support for positioning and supporting the substrate with a first side of the substrate facing the PGU. The apparatus further comprising at least one gas supply system and at least one exhaust port configured to provide a gas flow through a first gap between a front surface of the first electrode and the substrate and through a second gap between a first side surface of the first electrode and a side surface of the second electrode. Each of the electrodes has a length and a width, wherein the length of each respective electrode is at least four times the width of the respective electrode. The first electrode and the second electrode are positioned relative to one another such that the second gap is less than the width of the first electrode. The first electrode is positioned such that the first gap is less than the width of the first electrode. The gas supply system comprises a first gas inlet configured to inject a first gas flow into the second gap. The power supply is configured to provide an alternating current (AC) to sustain a plasma in the first gap. It is essential that the support forms a third electrode for sustaining a plasma in the second gap that the gas supply system comprises a second gas inlet downstream of the first gas inlet configured to inject a second gas flow into the plasma.

公开(公告)号：EP3339312A1

公开(公告)日：2018-06-27

申请号：EP18155154.0

申请日：2014-09-22

申请人： Versum Materials US, LLC

发明人： O'NEILL, Mark Leonard ,  XIAO, Manchao ,  LEI, Xinjian ,  HO, Richard ,  HARIPIN, Chandra ,  MACDONALD, Matthew R. ,  WANG, Meiliang

IPC分类号： C07F7/10 ,  C23C16/24 ,  H01L21/02 ,  C09D5/24 ,  C23C16/455

CPC分类号： H01L21/02219 ,  C07F7/10 ,  C09D5/24 ,  C23C16/24 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02598 ,  H01L21/0262

摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below:



In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350°C or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

公开(公告)号：EP2875166B1

公开(公告)日：2018-04-11

申请号：EP13819216.6

申请日：2013-07-19

申请人： L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

发明人： DUSSARRAT, Christian ,  KUCHENBEISER, Glenn ,  PALLEM, Venkateswara R.

IPC分类号： C23C16/24 ,  C23C16/448 ,  C23C16/455

CPC分类号： C07F7/025 ,  B05D1/60 ,  C23C16/30 ,  C23C16/345 ,  C23C16/36 ,  C23C16/401 ,  C23C16/402 ,  C23C16/44 ,  C23C16/45553 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02532

摘要： Disclosed are Si-containing thin film forming precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.

公开(公告)号：EP2027303B1

公开(公告)日：2018-03-21

申请号：EP07746605.0

申请日：2007-05-21

申请人： KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY

发明人： KIM, Hee Young ,  YOON, Kyung Koo ,  PARK, Yong Ki ,  MOON, Sang Jin ,  CHOI, Won Choon

IPC分类号： C23C16/24

CPC分类号： C23C16/4581 ,  C01B33/035 ,  C23C16/24 ,  Y10T428/2913

摘要： A method for preparing a polysilicon rod using a metallic core means, including: installing a core means in an inner space of a deposition reactor used for preparing a silicon rod, the core means being constituted by forming at least one separation layer on the surface of a metallic core element and being connected to an electrode means, heating the core means by supplying electricity through the electrode means, and supplying a reaction gas into the inner space for silicon deposition, thereby forming a deposition output in an outward direction on the surface of the core means. The deposition output and the core means can be separated easily from the silicon rod output obtained by the process of silicon deposition, and the contamination of the deposition output caused by impurities of the metallic core element can be minimized, thereby a high-purity silicon can be prepared more economically and conveniently.