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    Semiconductor devices and power conversion systems
    13.
    发明公开
    Semiconductor devices and power conversion systems 审中-公开
    半导体器件和电源转换系统

    公开(公告)号：EP2482319A3

    公开(公告)日：2016-04-13

    申请号：EP12150926.9

    申请日：2012-01-12

    申请人： Hitachi Power Semiconductor Device, Ltd.

    发明人： Shiraishi, Masaki ,  Mori, Mutsuhiro ,  Suzuki, Hiroshi ,  Watanabe, So

    IPC分类号： H01L29/739 ,  H01L29/10 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06

    摘要： A semiconductor device which includes: a first semiconductor layer (4) of a first conductivity type; a second semiconductor layer (2) of a second conductivity type that is formed near a surface of the first semiconductor layer (4); a first main electrode (11) that is electrically connected to the second semiconductor layer (2); a third semiconductor layer (6) of the second conductivity type that neighbors the first semiconductor layer (4) and is formed near a surface of the first semiconductor layer (4) opposite to the second semiconductor layer (2); a fourth semiconductor layer (7) of the first conductivity type that is selectively disposed in an upper portion of the third semiconductor layer (6); a second main electrode (14) that is electrically connected to the third semiconductor layer (6) and the fourth semiconductor layer (7); a trench (17) whose side face is in contact with the third semiconductor layer (6) and the fourth semiconductor layer (7), while reaching the first semiconductor layer (4); a gate electrode (9) that is formed along the side face of the trench (17) by a sidewall of polysilicon; and a polysilicon electrode (18) that is disposed away from the gate electrode (9) within the trench (17) and electrically connected to the second main electrode (14).

    SEMICONDUCTOR DEVICE
    16.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：EP3633733A1

    公开(公告)日：2020-04-08

    申请号：EP18809350.4

    申请日：2018-04-12

    申请人： Hitachi Power Semiconductor Device, Ltd.

    发明人： MIYOSHI, Tomoyuki ,  MORI, Mutsuhiro ,  TAKEUCHI, Yujiro ,  FURUKAWA, Tomoyasu

    IPC分类号： H01L29/739 ,  H01L29/12 ,  H01L29/78

    摘要： Provided is an IGBT capable of achieving both low conduction loss and low switching loss in the IGBT and achieving low power consumption, and a power conversion device to which the IGBT is applied. The semiconductor device includes a first conductivity type semiconductor layer formed on a first main surface of a semiconductor substrate, a second conductivity type well region formed on the first main surface side and in contact with the first conductivity type semiconductor layer, a first gate electrode and a second gate electrode adjacent to each other across the second conductivity type well region and in contact with the first conductivity type semiconductor layer and the second conductivity type well region through a gate insulating film, a first conductivity type emitter region formed on the first main surface side of the second conductivity type well region, a second conductivity type power supply region that penetrates the first conductivity type emitter region and is electrically connected to the second conductivity type well region, an emitter electrode electrically connected to the second conductivity type well region through the second conductivity type power supply region, a second conductivity type collector layer formed on a second main surface side of the semiconductor substrate that is opposite to the first main surface side and in contact with the first conductivity type semiconductor layer, and a collector electrode electrically connected to the second conductivity type collector layer. An interval between the first gate electrode and the second gate electrode is narrower than an interval between the first gate electrode and another adjacent gate electrode and an interval between the second gate electrode and another adjacent gate electrode. Each of the first gate electrode and the second gate electrode is electrically connected to any of a switching gate wiring and a carrier control gate wiring. The number of gate electrodes connected to the carrier control gate wiring is larger than the number of gate electrodes connected to the switching gate wiring.

    Power semiconductor device
    17.
    发明公开
    Power semiconductor device 审中-公开
    功率半导体器件

    公开(公告)号：EP2600399A3

    公开(公告)日：2017-08-09

    申请号：EP12195144.6

    申请日：2012-11-30

    申请人： Hitachi Power Semiconductor Device, Ltd.

    发明人： Harubeppu, Yu ,  Kushima, Takayuki ,  Nemoto, Yasuhiro ,  Horiuchi, Keisuke ,  Tanie, Hisashi

    IPC分类号： H01L23/367

    CPC分类号： H01L23/34 ,  H01L23/42 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00

    摘要： The purpose of the present invention is to provide a power semiconductor device which has a light weight, high heat dissipation efficiency, and high rigidity. The power semiconductor device including a base 1, semiconductor circuits 2 which are arranged on the base 1, and a cooling fin 3 which cools each of the semiconductor circuits 2, in which one or more protruding portions 1a, 1b are formed on the base 1, widths of the protruding portions 1a, 1b in a direction parallel to the base 1 surface being longer than a thickness of the base 1, thereby providing power semiconductor devices 100, 200, 300, 400 which have a light weight, high heat dissipation efficiency, and high rigidity.

    摘要翻译： 本发明的目的是提供一种重量轻，散热效率高，刚性高的功率半导体装置。 该功率半导体装置具有：基座1;配置在基座1上的半导体电路2;冷却各半导体电路2的散热片3，在基座1上形成有一个以上的突起部1a，1b 突出部1a，1b在与基底1平行的方向上的宽度比基底1的厚度长，从而提供重量轻，散热效率高的功率半导体装置100,200,300,400 ，刚性高。

    SEMICONDUCTOR DEVICE AND ALTERNATOR USING SAME
    18.
    发明公开
    SEMICONDUCTOR DEVICE AND ALTERNATOR USING SAME 审中-公开
    难民事务高级专员

    公开(公告)号：EP3171401A2

    公开(公告)日：2017-05-24

    申请号：EP16199336.5

    申请日：2016-11-17

    申请人： Hitachi Power Semiconductor Device, Ltd.

    发明人： KAWANO, Kenya ,  ISHIMARU, Tetsuya ,  KURITA, Shinichi ,  TERAKAWA, Takeshi

    IPC分类号： H01L23/051

    摘要： Provided are a semiconductor device 200, 300 realized easily at low cost without requiring a complicated manufacturing process, and an alternator using the same. The semiconductor device 200, 300 includes a base having a base seat, a lead having a lead header, and an electronic circuit body 100, wherein the electronic circuit body 100 is arranged between the base and the lead; the base seat is connected to a first surface of the electronic circuit body 100; the lead header is connected to a second surface of the electronic circuit body 100; the electronic circuit body 100 is integrally covered by resin 16, including a transistor circuit chip 11 having a switching element 111, a control circuit chip 12 for controlling the switching element 111, a drain frame 14, and a source frame; either one of the drain frame and the source frame, and the base are connected; and the other one of the drain frame and the source frame, and the lead are connected.

    摘要翻译： 提供了一种在不需要复杂的制造工艺的情况下以低成本实现的半导体器件200,300和使用该半导体器件的交流发电机。 半导体器件200,300包括具有基座的基座，具有引线头的引线和电子电路体100，其中电子电路体100布置在基座和引线之间; 基座与电子电路体100的第一面连接; 引线头连接到电子电路体100的第二表面; 电子电路体100由树脂16整体覆盖，包括具有开关元件111的晶体管电路芯片11，用于控制开关元件111的控制电路芯片12，漏极框架14和源极框架; 漏极框架和源框架中的任一个以及基座连接; 并且漏极框架和源框架中的另一个以及引线被连接。

    RECTIFICATION DEVICE, ALTERNATOR, AND POWER CONVERSION DEVICE
    19.
    发明公开
    RECTIFICATION DEVICE, ALTERNATOR, AND POWER CONVERSION DEVICE 审中-公开
    GLEICHRICHTER，WECHSELSTROMGENERATOR UND LEI​​STUNGSWANDLER

    公开(公告)号：EP3082244A1

    公开(公告)日：2016-10-19

    申请号：EP14870115.4

    申请日：2014-12-12

    申请人： Hitachi Power Semiconductor Device, Ltd.

    发明人： ISHIMARU, Tetsuya ,  ONDA, Kohhei ,  SAKANO, Junichi ,  MORI, Mutsuhiro

    IPC分类号： H02M7/21 ,  H02M1/08 ,  H02M7/12

    CPC分类号： H02M7/04 ,  H02M1/08 ,  H02M7/219 ,  H02M2001/0029 ,  H02M2007/2195 ,  H03K17/163 ,  Y02B70/1408

    摘要： A rectifier including an autonomous type synchronous-rectification MOSFET is provided, which prevents chattering and through-current caused by a malfunction when a noise is applied. The rectifier (132) includes: a rectification MOSFET (101) for performing synchronous rectification; a determination circuit (103) configured to input a voltage between a pair of main terminals (TH, TL) of the rectification MOSFET (101), and to determine whether the rectification MOSFET (101) is in on or off state on the basis of the inputted voltage; and a gate drive circuit (105) configured such that a gate of the rectification MOSFET (101) is turned on and off by a comparison signal (Vcomp) from the determination circuit (103), and such that a time required to boost a gate voltage (Vgs) when the rectification MOSFET (101) is turned on is longer than a time required to lower the gate voltage (Vgs) when the rectification MOSFET (101) is turned off.

    摘要翻译： 提供了包括自主型同步整流MOSFET的整流器，其在施加噪声时防止由故障引起的颤动和通电。 整流器（132）包括：用于执行同步整流的整流MOSFET（101）; 确定电路（103），其被配置为在所述整流用MOSFET（101）的一对主端子（TH，TL）之间输入电压，并且基于所述整流用MOSFET（101）的导通或截止状态来判定所述整流用MOSFET（101） 输入电压; 以及栅极驱动电路（105），其被配置为使得通过来自所述确定电路（103）的比较信号（Vcomp）使得所述整流MOSFET（101）的栅极导通和截止，并且使得将栅极升压所需的时间 整流MOSFET（101）导通时的电压（Vgs）比整流用MOSFET（101）截止时的栅极电压（Vgs）降低所需要的时间长。