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31 条记录 (耗时 0.012 秒)

    Method of fabricating semiconductor structure
    11.
    发明公开
    Method of fabricating semiconductor structure 失效
    Verfahren zum Herstellen einer Halbleiterstruktur。

    公开(公告)号：EP0252206A2

    公开(公告)日：1988-01-13

    申请号：EP87101113.6

    申请日：1987-01-27

    申请人： HITACHI, LTD.

    发明人： Homma, Hideo ,  Misawa, Yutaka ,  Momma, Naohiro

    IPC分类号： H01L21/82 ,  H01L21/285 ,  H01L21/00

    CPC分类号： H01L29/66272 ,  H01L21/0337 ,  H01L21/32137 ,  H01L21/8249 ,  H01L29/41783 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/78

    摘要： A method of fabricating a semiconductor device includes the steps of: forming at least one first semi­conductor region (51) of a first conductivity type and at least one second semiconductor region (50) of a second conductivity type in a main surface of a semiconductor layer of the first conductivity type; forming a three-layer film having a desired shape on each of the first and second semiconductor regions, the three-layer film being made up of a bottom layer which is a conductive film (56), an intermediate layer which is a silicon nitride film (57), and a top layer which is a polycrystalline silicon film (58) doped with one of arsenic and phosphorus; forming a first insulating layer (61) on the side wall of the three-layer film; forming a second polycrystalline silicon film (62) on the whole surface, and diffusing one of arsenic and phosphorus from the first polycrystal­line silicon film (58) into the second polycrystalline silicon film (62); selectively etching off the first polycrystalline silicon film (58) and that portion (62A) of the second polycrystalline silicon film, in which one of arsenic and phosphorus has been diffused; forming a second insulating layer (64) at least on the surface of that portion (63A) of the second polycrystalline silicon film which exists on the second semiconductor region (50); removing the silicon nitride film (57) and the conductive film (56) which exist on the second semiconductor region (50), while using the second insulating layer (64) as a mask, to form an aperture and forming a third polycrystalline silicon film (69) so that the aperture (68) is covered by the third polycrystalline silicon film.

    摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体层的主表面中形成至少一个第一导电类型的第一半导体区域（51）和第二导电类型的至少一个第二半导体区域（50） 的第一导电类型; 在第一和第二半导体区域中的每一个上形成具有期望形状的三层膜，三层膜由作为导电膜（56）的底层构成，作为氮化硅膜的中间层 （57），以及掺杂有砷和磷之一的多晶硅膜（58）的顶层; 在所述三层膜的侧壁上形成第一绝缘层（61）; 在整个表面上形成第二多晶硅膜（62），并将砷和磷中的一种从第一多晶硅膜（58）扩散到第二多晶硅膜（62）中; 选择性地蚀刻出第一多晶硅膜（58）和砷和磷之一已被扩散的第二多晶硅膜的部分（62A）; 至少在所述第二半导体区域（50）上存在的所述第二多晶硅膜的所述部分（63A）的表面上形成第二绝缘层（64）; 在使用第二绝缘层（64）作为掩模的同时，移除存在于第二半导体区域（50）上的氮化硅膜（57）和导电膜（56），以形成孔并形成第三多晶硅膜 （69），使得孔（68）被第三多晶硅膜覆盖。

    Method and apparatus for forming an anti-reflection film for a cathode-ray tube
    14.
    发明公开
    Method and apparatus for forming an anti-reflection film for a cathode-ray tube 失效
    形成阴极射线管的抗反射膜的方法和装置

    公开(公告)号：EP0533030A3

    公开(公告)日：1993-05-26

    申请号：EP92115338.3

    申请日：1992-09-08

    申请人： HITACHI, LTD.

    发明人： Oishi, Tomoji ,  Maekawa, Sachiko ,  Kato, Akira ,  Nishizawa, Masahiro ,  Tomita, Yoshifumi ,  Okude, Kojiro ,  Tochigi, Kenji ,  Misawa, Yutaka

    IPC分类号： H01J29/89 ,  G02B1/10

    CPC分类号： G02B1/11 ,  H01J29/896 ,  H01J2209/012

    摘要： An anti-reflection film (2) is produced on the panel surface of a cathode-ray tube (1) by:
    (A) preparing a solution (8) for forming an anti-reflection film (2), which contains water and an alkoxide having the formula,
            M(OR) n
    wherein M is Si or a metal selected from the group consisting of Ti, Al, Zr, Sn, In, Sb and Zn; R is an alkyl group having 1-10 carbon atoms; n is an integer of from 1 to 8; and when n is not 1, the alkyl groups represented by R may be the same or different, (B) coating the solution (8) for forming an anti-reflection film (2) on the outermost surface of the panel of a cathode-ray tube (1), and (C) applying an ultraviolet light (7) to the solution (8) for forming an anti-reflection film (2) coated on said surface to cure the solution to form a transparent film with fine roughness. This production method is carried out using an apparatus having:
    (a) a coating means (3) for coating the above solution (8) for forming an anti-reflection film (2) on the outermost surface of the panel of a cathode-ray tube (1), (b) a transferring means (4) for transferring the solution-coated cathode-ray tube (1), and (c) an ultraviolet light-applying means (7) for photocuring the solution (8) coated on the cathode-ray tube (1) during the transfer of the solution-coated cathode-ray tube. In the above method, when a silicon alkoxide is used as the metal alkoxide, there can be obtained a cathode-ray tube having an anti-reflection film made of alkali-free silica on the outermost surface of the panel, said anti-reflection film giving a ratio of Si-O-Si peak intensity to Si-OH peak intensity of 4 or more when measured for infrared spectrum. Further embodiments include an antistatic layer and the inclusion of an organic dye into the anti-reflection film.

    Semiconductor device having a polycrystalline silicon interconnection layer and method for its manufacture
    16.
    发明公开
    Semiconductor device having a polycrystalline silicon interconnection layer and method for its manufacture 失效
    具有多晶硅的用于其制备的化合物层，和工艺的半导体器件。

    公开(公告)号：EP0183995A1

    公开(公告)日：1986-06-11

    申请号：EP85113904.8

    申请日：1985-10-31

    申请人： HITACHI, LTD.

    发明人： Misawa, Yutaka ,  Saito, Osamu

    IPC分类号： H01L29/54 ,  H01L23/52

    CPC分类号： H01L21/76895 ,  H01L21/28525 ,  H01L21/32051 ,  H01L29/456 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor LSI device formed in a semiconductor substrate (10) comprising source/drain regions (11, 12) of a MOSFET, polycrystalline silicon conductor (33) to be connected to the source/drain regions, and a silicide layer (24) interposed between the source/drain region and the polycrystalline silicon conductor.
    The silicide penetrates the inevitable thin oxide film on the silicon substrate surface, assuring contacts of low resistance, while lateral resistance of the source/drain region formed in the semiconductor substrate (10) is also reduced; this effect can also be used to reduce the contact resistance between two polycrystalline silicon layers (30, 33). Reduction of contact/connection resistance is accomplished in a high density LSI which is thus provided with an improved high-speed performance.