-
21.发明授权TRAITEMENT DE SURFACE PAR PLASMA D'AZOTE DANS UN PROCÉDÉ DE COLLAGE DIRECT 有权氮等离子体表面处理直接结合PROCEDURE
公开(公告)号：EP2304787B1
公开(公告)日：2011-10-19
申请号：EP09765984.1
申请日：2009-04-28
发明人： MORICEAU, Hubert , MORALES, Christophe , RIEUTORD, François , VENTOSA, Caroline , CHEVOLLEAU, Thierry
IPC分类号： H01L21/762
CPC分类号： H01L21/76251 , H01L21/2007
摘要： Two wafers, each having on a surface thereof a thin silicon or silicon oxide film, are bonded by subjecting the thin film of at least one wafer to a surface treatment forming a thin silicon oxynitride surface film with a thickness of less than 5 nm. The thin film is formed by means of a nitrogen-based plasma, generated by an inductively coupled plasma source. In addition, the potential difference between the plasma and a substrate holder supporting said wafer, during the surface treatment, is less than 50 V, advantageously less than 15 V and preferably zero. This makes it possible to obtain a defect-free bonding interface irrespective of the temperature of any heat treatment carried out after the contacting step.
-
公开(公告)号：EP2529418B1
公开(公告)日：2019-06-26
申请号：EP11708520.9
申请日：2011-01-26
IPC分类号： H01L31/20 , H01L31/0236 , H01L21/306 , H01L31/075
-
23.发明授权PROCÉDÉ DE FABRICATION D'UNE STRUCTURE EMPILÉE COMPRENANT UNE COUCHE MINCE ADHÉRANT À UN SUBSTRAT CIBLE 有权与目标衬底的堆叠结构过程ATTACHED薄层
公开(公告)号：EP1344249B1
公开(公告)日：2017-01-18
申请号：EP01993021.3
申请日：2001-11-05
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/76256
-
24.发明公开PROCEDE DE REALISATION D'UNE STRUCTURE PAR ASSEMBLAGE D'AU MOINS DEUX ELEMENTS PAR COLLAGE DIRECT 审中-公开一种用于生产结构的安排至少两个元件通过直接连接胶
公开(公告)号：EP3111467A2
公开(公告)日：2017-01-04
申请号：EP15706806.5
申请日：2015-02-26
IPC分类号： H01L21/60 , H01L21/768 , H01L21/98 , H01L23/485
CPC分类号： H01L24/83 , H01L21/185 , H01L24/03 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/80 , H01L25/0657 , H01L25/50 , H01L2224/0345 , H01L2224/03452 , H01L2224/0381 , H01L2224/03845 , H01L2224/05073 , H01L2224/0508 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05186 , H01L2224/05571 , H01L2224/05647 , H01L2224/2745 , H01L2224/2755 , H01L2224/27845 , H01L2224/29147 , H01L2224/80055 , H01L2224/80357 , H01L2224/8083 , H01L2224/80895 , H01L2224/80896 , H01L2224/8092 , H01L2224/80948 , H01L2224/83895 , H01L2225/06524 , H01L2924/01005 , H01L2924/01006 , H01L2924/01008 , H01L2924/01015 , H01L2924/01016 , H01L2924/01017 , H01L2924/04941 , H01L2924/04953 , H01L2924/00014 , H01L2924/049 , H01L2924/00012
摘要： Process for producing a structure by direct adhesive bonding of two elements comprising the production of the elements to be assembled and the assembly of said elements, in which the production of the elements to be assembled comprises the steps: - deposition on a substrate of a TiN layer by physical vapour deposition, - deposition of a copper layer on the TiN layer, and in which the assembly of said elements comprises the steps: - polishing the surfaces of the copper layers intended to come into contact so that they have a roughness of less than 1 nm RMS and hydrophilic properties, - bringing said surfaces into contact, - storing said structure at atmospheric pressure and at ambient temperature.
摘要翻译： 待组装和元件的组装生产的元件的：一种用于通过两个元件，所述方法包括直接键合制造结构的方法。 生产的元件的组装，包括：在TiN层上的铜层的通过物理气相沉积TiN层，和沉积的底物沉积。 的元件的组件包括：抛光预期会接触，从而thatthey具有小于1个纳米RMS和亲水性能的粗糙度铜层的表面，使表面接触，并在大气压下和在存放结构 环境温度。
-
25.发明授权
公开(公告)号：EP2529416B1
公开(公告)日：2015-10-21
申请号：EP11708521.7
申请日：2011-01-26
IPC分类号： H01L31/0747
CPC分类号： H01L31/0745 , H01L31/0747 , H01L31/1868 , Y02E10/50 , Y02P70/521
-
公开(公告)号：EP2586055A1
公开(公告)日：2013-05-01
申请号：EP11727692.3
申请日：2011-06-21
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives , Centre National de la Recherche Scientifique
IPC分类号： H01L21/762
CPC分类号： B32B38/0008 , C23C14/0005 , C23C14/48 , H01L21/76254 , Y02P20/582
摘要： The invention relates to a method for transferring a single-crystal silicon thin film (3) from a donor substrate (1) made of single-crystal silicon, in which: the implantation conditions are such that the thickness of the thin film (3) is less than 10 μm; and the thickness of a polymer layer (5) for gluing the thin film to a receiving substrate is less than a critical threshold defined in accordance with the energy and amount of the implantation, said critical threshold being less than or equal to the smallest of the following two quantities: 500 nm; and the thickness of the future thin film.
-
公开(公告)号：EP2443058A1
公开(公告)日：2012-04-25
申请号：EP10723626.7
申请日：2010-06-17
发明人： CONSTANCIAS, Christophe , DALZOTTO, Bernard , FOURNEL, Frank , MICHALLON, Philippe , MORICEAU, Hubert , POUTEAU, Valérie
CPC分类号： B81C1/00158 , B81B2201/0264 , B81B2201/047 , B81C2201/017
摘要： The invention relates to a method for determining a minimum tension compensation stress for a membrane with a thickness no higher than one micron, secured to a frame having, in the absence of external stress, a desired deflection, in which: a°) the length, width and thickness of the membrane are selected, as well as the material and a residual stress thereof; b°) the weight of the membrane is calculated; c°) β, C and C* are calculated using suitable software; d°) the calculated deflection h is deduced; e°) the deflection is compared with the desired deflection; f°) if said calculated deflection is greater than the desired deflection, the residual stress is adjusted so that the calculated deflection is no higher than the desired deflection; g°) when the calculated deflection is no higher than the desired deflection, the minimum tension compensation stress is calculated.
-
28.发明授权
公开(公告)号：EP1337683B1
公开(公告)日：2011-10-05
申请号：EP01974439.0
申请日：2001-10-05
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)
发明人： SEMERIA, Marie-Noëlle , MUR, Pierre , FOURNEL, Franck , MORICEAU, Hubert , EYMERY, Joël , MAGNEA, Nol , BARON, Thierry , MARTIN, François
CPC分类号： C23C16/0272 , C23C14/024 , C30B25/02 , C30B29/605
摘要： The invention concerns a device consisting of microstructures or nanostructures on a support. The invention is characterised in that the support comprises: a substrate (1) including at least a part made of crystalline material, said part having a surface (2) exhibiting a stress field or a topology associated with a stress field, the stress field being associated with dislocations; an intermediate layer (3) integral with said surface (2) and having a thickness and/or a composition and/or a state enabling transmission of said stress field through said layer up to its free surface which bears the microstructures or nanostructures (4).
-
公开(公告)号：EP0986826B1
公开(公告)日：2010-12-29
申请号：EP99911878.9
申请日：1999-04-06
发明人： MALEVILLE, Christophe , BARGE, Thierry , ASPAR, Bernard , MORICEAU, Hubert , AUBERTON-HERVE, André-Jacques
IPC分类号： H01L21/762
CPC分类号： H01L21/3221 , H01L21/76254
摘要： The invention concerns a method for treating a substrate comprising a semi-conducting layer (4) on at least one of its surfaces. Said method comprises a step for annealing the substrate and a step for forming an oxide layer (6) at the semi-conducting layer (4) surface, carried out before the end of the annealing step, protecting the remainder of the semi-conducting layer (4).
-
公开(公告)号：EP3159916B1
公开(公告)日：2020-08-26
申请号：EP16195113.2
申请日：2016-10-21
发明人： DECHAMP, Jérôme , MORICEAU, Hubert , ZUSSY, Marc
IPC分类号： H01L21/304 , H01L21/683
-
-
-
-
-
-
-
-
-
搜索结果
41 条记录 (耗时 0.031 秒)
