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公开(公告)号：EP1692716B1
公开(公告)日：2019-11-20
申请号：EP04816510.4
申请日：2004-12-06
IPC分类号： H01L21/58 , H01L21/98 , H01L25/065
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2.发明授权PROCEDE D'OBTENTION D'UNE COUCHE TRES MINCE PAR AMINCISSEMENT PAR AUTO-PORTAGE PROVOQUE 有权一种用于生产薄层BY非常挑起SELBSTRAGUNG
公开(公告)号：EP1631982B1
公开(公告)日：2015-04-08
申请号：EP04742879.2
申请日：2004-06-03
IPC分类号： H01L21/762 , H01L21/20
CPC分类号： H01L21/76254
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公开(公告)号：EP2210258A1
公开(公告)日：2010-07-28
申请号：EP08804254.4
申请日：2008-09-16
CPC分类号： G01Q60/22 , B29D11/00009 , B29D11/00346 , G01Q70/12 , G11B7/1374 , G11B7/1387
摘要： The invention generally pertains to the field of solid immersion lenses for optical applications in high resolution microscopy. The lens of the invention includes a spherical sector (1) limited by a planar surface (11) and an object (2) having nanometric dimensions arranged on the planar surface at the focus of said solid immersion lens. A light-opaque layer (3) having a central opening (31) with nanometric dimensions can be provided on the planar surface, said opening being centred on the focus of the solid immersion lens. The nano-object can be a tube or a thread having a cylindrical shape. The lens of the invention can be made using lithography techniques.
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4.发明授权
公开(公告)号：EP1774589B1
公开(公告)日：2010-07-28
申请号：EP05782182.9
申请日：2005-06-29
发明人： MORICEAU, Hubert , FEUILLET, Guy , POCAS, Stéphane
IPC分类号： H01L21/98 , H01L25/065 , H01L21/18
CPC分类号： H01L24/29 , H01L24/32 , H01L24/83 , H01L27/14634 , H01L27/1469 , H01L2224/04026 , H01L2224/05009 , H01L2224/29082 , H01L2224/29117 , H01L2224/29138 , H01L2224/29155 , H01L2224/29164 , H01L2224/83193 , H01L2224/83801 , H01L2224/8381 , H01L2224/8383 , H01L2224/83894 , H01L2224/9202 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01057 , H01L2924/01058 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/10329 , Y10T156/10 , H01L2924/01014 , H01L2924/01028 , H01L2924/01049 , H01L2924/01031 , H01L2924/3512 , H01L2924/00 , H01L2924/00014
摘要： The invention relates to a method for assembling, by molecular adhesion, a first substrate and a second substrate along the contact faces, the contact face of the first substrate having an electrically conductive layer on at least a portion of its surface. The inventive method comprises the following steps: depositing a connecting layer on at least a portion of the electrically conductive layer, said connecting layer being capable of ensuring a molecular adhesion with an area of the contact face of the second substrate and capable of being combined with the electrically conductive layer in order to form a conductive alloy; placing the connecting layer of the first substrate in contact with the area of the contact face of the second substrate and bonding it by molecular adhesion; transforming, on all or a portion of its width, all or part of the electrically conductive layer with all or part of the connecting layer and with at least a portion of the width of the area of the contact face over all or part of the surface of the second substrate in order to form a conductive alloy area.
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公开(公告)号：EP1774588B1
公开(公告)日：2010-07-14
申请号：EP05782045.8
申请日：2005-06-29
IPC分类号： H01L21/98 , H01L25/065 , H01L27/146
CPC分类号： H01L27/14636 , H01L24/83 , H01L27/14634 , H01L33/0079 , H01L2224/83801 , H01L2224/83894 , H01L2924/01079 , H01L2924/01087 , H01L2924/07811 , Y10T29/49126 , H01L2924/3512 , H01L2924/00
摘要： The invention relates to an assembling method for enabling localized electrical connections between areas situated on a face of a first substrate and corresponding areas situated on a face of a second substrate, said faces facing one another and at least one of the substrates having a surface topography. The method is characterized by the following steps consisting of: forming an intermediate layer comprising at least one burying layer on the face of the substrate or of the substrates having a surface topography in order to make it/them topographically compatible with the molecular bonding of these faces of the substrates to one another, the resistivity and/or thickness of the intermediate layer being chosen for enabling said localized electrical connections; placing the two faces in contact, the substrates being positioned in a manner that enables them to ensure the electrical connections between the areas situated on the first substrate and the corresponding areas situated on the second substrate, and; bonding the faces of the first and second substrate by molecular adhesion.
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公开(公告)号：EP1831923B1
公开(公告)日：2019-05-22
申请号：EP05825588.6
申请日：2005-12-22
IPC分类号： H01L21/762 , H01L21/02
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公开(公告)号：EP1378003B1
公开(公告)日：2017-11-08
申请号：EP02732806.1
申请日：2002-04-11
IPC分类号： H01L21/18 , H01L21/762 , H01L21/306 , H01L21/304 , H01L21/324 , H01L21/265 , H01L21/78 , H01L21/68
CPC分类号： H01L21/7813 , H01L21/6835 , H01L21/76254 , H01L21/76259 , H01L2221/68318 , H01L2221/68359 , H01L2221/68363 , H01L2924/19041 , Y10T156/11
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公开(公告)号：EP2771911B1
公开(公告)日：2015-09-16
申请号：EP12775522.1
申请日：2012-10-24
IPC分类号： H01L21/762
CPC分类号： H01L21/76251 , H01L21/02164 , H01L21/02238 , H01L21/2007 , H01L21/223 , H01L21/228 , H01L21/30625 , H01L21/3105
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10.发明公开PROCEDE DE REALISATION D'UNE CELLULE PHOTOVOLTAIQUE AVEC PREPARATION DE SURFACE D'UN SUBSTRAT EN SILICIUM CRISTALLIN 审中-公开方法制造光电电池，包括：结晶硅衬底的表面的制备
公开(公告)号：EP2529418A2
公开(公告)日：2012-12-05
申请号：EP11708520.9
申请日：2011-01-26
IPC分类号： H01L31/20 , H01L31/0236
CPC分类号： H01L21/30604 , H01L31/02363 , H01L31/075 , H01L31/18 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： The invention relates to a method for creating at least one photovoltaic cell that consecutively includes anisotropically etching a surface (1a) of a crystalline silicon substrate (1) and treating said surface (1a) by means of isotropic etching. Treatment by means of isotropic etching includes at least two consecutive operations that respectively involve forming a silicon oxide thin film (11), having a regulated mean thickness between 10 nm and 500 nm, and removing said thus-formed thin film. The operation that involves forming a silicon oxide thin film (11) on the surface (1a) of the substrate (1) is carried out by means of thermally activated dry oxidation. Such a method makes it possible to improve the surface condition of the surface (1a) of the substrate (1) once the latter is anisotropically etched.
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