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    Microelectromechanical device with stress and stress gradient compensation
    21.
    发明公开
    Microelectromechanical device with stress and stress gradient compensation 审中-公开
    Mikroelektromechanisches Bauteil mit Spannungs- und Spannungsgradientenausgleich

    公开(公告)号：EP1733999A1

    公开(公告)日：2006-12-20

    申请号：EP05105336.1

    申请日：2005-06-16

    Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW

    Inventor： Tilmans, Hendrikus ,  Klaasse, Gerald

    IPC: B81B3/00 ,  H01H1/00

    CPC classification number: B81B3/0072 ,  B81B2201/016 ,  H01L41/0933 ,  H02N1/002

    Abstract: A micro electromechanical device comprising a floating element extending between at least two anchors, the floating element comprising a predetermined reference portion, which in at least one predetermined state of the device in use is to be located within a predetermined reference plane, and at least two flexible sections which each extend between the reference portion and one of the anchors, at least two of the flexible sections comprising a stress relieving element which enables deflection of the floating element as a result of a stress gradient, characterised in that the stress relieving elements are provided on predetermined locations between the respective anchor and the reference portion, chosen such that the reference portion is substantially located within the predetermined reference plane in said predetermined state of the device in use.

    Abstract translation: 一种微机电装置，包括在至少两个锚之间延伸的浮动元件，所述浮动元件包括预定参考部分，所述参考部分在至少一个使用中的装置的预定状态位于预定参考平面内，并且至少两个 所述柔性部分各自在所述参考部分和所述锚固件之一之间延伸，所述柔性部分中的至少两个包括应力释放元件，所述应力释放元件能够由于应力梯度而偏移所述浮动元件，其特征在于，所述应力释放元件 设置在相应锚和参考部分之间的预定位置处，被选择为使得参考部分在使用中的装置的所述预定状态中基本上位于预定参考平面内。

    Microsystème électromécanique comprenant une poutre se déformant par flexion
    22.
    发明公开
    Microsystème électromécanique comprenant une poutre se déformant par flexion 审中-公开
    Mikroelektromechanisches System mit einem sich biegendem Balken

    公开(公告)号：EP1705151A1

    公开(公告)日：2006-09-27

    申请号：EP05292363.8

    申请日：2005-11-08

    Applicant: STMICROELECTRONICS SA ,  COMMISSARIAT A L'ENERGIE ATOMIQUE

    Inventor： Casset, Fabrice ,  Segueni, Karim ,  De Grave, Arnaud ,  Abele, Nicolas

    IPC: B81B3/00 ,  H03H9/24

    CPC classification number: H03H9/2463 ,  B81B3/007 ,  B81B2201/016 ,  B81B2201/0271 ,  B81B2203/0118 ,  H03H3/0076 ,  H03H9/2447

    Abstract: Un microsystème électromécanique comprend une poutre (1) et une électrode (10) couplée par une interaction électrostatique avec la poutre. La poutre est adaptée pour subir des déformations élastiques par flexion et possède un motif de section sensiblement constant. La poutre (1) est constituée de plusieurs pans (P1-P4) s'étendant sur la longueur de la poutre (L), et ayant chacun une épaisseur inférieure à une dimension extérieure du motif de section (w, t). Une fréquence de vibration par flexion de la poutre est alors accrue par rapport à une poutre pleine de mêmes dimensions extérieures. Un tel microsystème est adapté pour des applications à durées de transition très courtes, ou pour réaliser des oscillateurs et des résonateurs à haute fréquence.

    Abstract translation: 该系统具有适于通过弯曲进行弹性应变并且在垂直于纵向方向（D）的平面中具有截面图案的微束（1）。 微束包括沿着微束的主要部分延伸的部分（P1-P4）。 这些部分沿着平行于方向（D）的线彼此连接。 这些部分的厚度小于截面图案的外部尺寸。 这些部分具有外形尺寸为60×60微米的方形形状。 该微束具有2.1兆赫的弹性弯曲应变频率。 还包括以下独立权利要求：（1）包括微机电系统的断续器（2）包括微机电系统的加速度计（3）包括微电机械系统（4）的振荡器 ）包括微机电系统的谐振器（5）用于制造微机电系统的方法。

    Electrostatically actuatable MEMS device
    26.
    发明公开
    Electrostatically actuatable MEMS device 有权
    静电致动的MEMS装置

    公开(公告)号：EP2107038A3

    公开(公告)日：2010-01-27

    申请号：EP09156532.5

    申请日：2009-03-27

    Applicant: IMEC ,  Katholieke Universiteit Leuven

    Inventor： De Wolf, Ingrid ,  Rottenberg, Xavier ,  Czarnecki, Piotr ,  Soussan, Philippe

    IPC: B81B3/00 ,  H01H59/00

    CPC classification number: B81B3/0008 ,  B81B2201/016 ,  H01G5/16 ,  H01H59/0009 ,  H01H2059/0018

    Abstract: Electrostatically actuatable MEMS device comprising: a substrate (103) of which at least a top layer (106) comprises a dielectric material; a first conductor (102) fixed to the top layer of the substrate, forming a fixed electrode of the device; and a second conductor (100) fixed to the top layer of the substrate, the second conductor being electrically isolated from the first conductor and comprising a movable portion (100') which is suspended at a predetermined first distance (D1) above the first conductor. The movable portion forms a movable electrode of the device which approaches the fixed electrode upon applying an appropriate voltage difference between the first and second conductors. A substrate surface area (105) is defined as the orthogonal projection of the movable portion on the substrate between the first and second conductors. In the substrate surface area at least one recess (107) is provided in at least the top layer of the substrate.

    DEVICES HAVING VERTICALLY-DISPOSED NANOFABRIC ARTICLES AND METHODS OF MAKING THE SAME
    27.
    发明公开
    DEVICES HAVING VERTICALLY-DISPOSED NANOFABRIC ARTICLES AND METHODS OF MAKING THE SAME 有权
    带竖设施排列的纳米织物制品及其制造方法

    公开(公告)号：EP1593164A4

    公开(公告)日：2009-05-13

    申请号：EP04710662

    申请日：2004-02-12

    Applicant: NANTERO INC

    Inventor： JAIPRAKASH VENKATACHALAM C ,  WARD JONATHAN W ,  RUECKES THOMAS ,  SEGAL BRENT M

    IPC: G11C23/00 ,  B81B3/00 ,  G11C13/02 ,  G11C14/00 ,  H01H59/00

    CPC classification number: G11C23/00 ,  B81B2201/016 ,  B81B2203/0127 ,  B81C1/00142 ,  B81C2201/0109 ,  B82Y10/00 ,  G11C13/025 ,  G11C14/00 ,  G11C2213/16 ,  G11C2213/77 ,  G11C2213/81 ,  H01H1/0094

    Abstract: Electro-mechanical switches and memory cells using vertically-disposed nanofabric articles and methods of making the same are described. An electro-mechanical device, includes a structure having a major horizontal surface and a channel formed therein. A conductive trace is in the channel; and a nanotube article vertically suspended in the channel, in spaced relation to a vertical wall of the channel. The article is electro-mechanically deflectable in a horizontal direction toward the conductive trace. Under certain embodiments, the vertically suspended extent of the nanotube article is defined by a thin film process. Under certain embodiments, the vertically suspended extent of the nanotube article is about 50 nanometers or less. Under certain embodiments, the nanotube article is clamped with a conducting material disposed in porous spaces between some nanotubes of the nanotube article. Under certain embodiments, the nanotube article is formed from a porous nanofabric. Under certain embodiments, the nanotube article is electromechanically deflectable into contact with the conductive trace and the contact is either a volatile state or non-volatile state depending on the device construction. Under certain embodiments, the vertically oriented device is arranged into various forms of three-trace devices. Under certain embodiments, the channel may be used for multiple independent devices, or for devices that share a common electrode.

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