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    APPARATUS AND METHOD FOR TUNING A RESONANCE FREQUENCY
    1.
    发明公开
    APPARATUS AND METHOD FOR TUNING A RESONANCE FREQUENCY 审中-公开
    用于调谐共振频率的装置和方法

    公开(公告)号：EP2974014A1

    公开(公告)日：2016-01-20

    申请号：EP13877847.7

    申请日：2013-03-11

    申请人： Nokia Technologies OY

    发明人： VOUTILAINEN, Martti

    IPC分类号： H03H9/15 ,  H03H9/54 ,  H01B1/04 ,  H01B5/14 ,  H04B1/38 ,  H01L41/08

    CPC分类号： H03J1/06 ,  H01L41/193 ,  H01Q1/50 ,  H03H3/02 ,  H03H9/02244 ,  H03H9/02409 ,  H03H9/2436 ,  H03H9/2457 ,  H03H9/2463 ,  H03H9/462 ,  H03H9/70 ,  H03H2003/027 ,  H03H2009/155

    摘要： There are disclosed various apparatuses and methods for tuning a resonance frequency. In some embodiments there is provided an apparatus (200) comprising at least one input electrode (202, 204) for receiving radio frequency signals; a graphene foil (210) for converting at least part of the radio frequency signals into mechanical energy; at least one dielectric support element (212) to support the graphene foil (210) and to space apart the at least one input electrode (202, 204) and the graphene foil (210). The graphene foil (210) has piezoelectric properties. In some embodiments there is provided a method comprising receiving radio frequency signals by at least one input electrode (202, 204) of an apparatus (200); providing a bias voltage to the apparatus (200) for tuning the resonance frequency of the apparatus (200); and converting at least part of the radio frequency signals into mechanical energy by a graphene foil (210) having piezoelectric properties.

    摘要翻译： 公开了用于调谐谐振频率的各种装置和方法。 在一些实施例中，提供了一种设备（200），其包括用于接收射频信号的至少一个输入电极（202,204） 石墨箔（210），用于将至少部分射频信号转换为机械能; 至少一个介电支撑元件（212），以支撑所述石墨烯箔（210）并将所述至少一个输入电极（202,204）和所述石墨烯箔（210）间隔开。 石墨烯箔（210）具有压电性质。 在一些实施例中，提供了一种方法，包括：通过设备（200）的至少一个输入电极（202,204）接收射频信号; 向所述设备（200）提供偏置电压以调谐所述设备（200）的谐振频率; 以及通过具有压电特性的石墨烯箔（210）将至少部分射频信号转换为机械能。

    MECHANICAL RESONATOR DEVICE HAVING PHENOMENA-DEPENDENT ELECTRICAL STIFFNESS
    9.
    发明公开
    MECHANICAL RESONATOR DEVICE HAVING PHENOMENA-DEPENDENT ELECTRICAL STIFFNESS 审中-公开
    通过物理尺寸依赖电动刚度机械谐振器

    公开(公告)号：EP1417754A1

    公开(公告)日：2004-05-12

    申请号：EP02757136.3

    申请日：2002-08-15

    申请人： THE REGENTS OF THE UNIVERSITY OF MICHIGAN

    发明人： HSU, Wan-Thai ,  NGUYEN, Clark, T., C.

    IPC分类号： H03H9/24

    CPC分类号： H03H9/2463 ,  H03H9/02448 ,  H03H9/24 ,  H03H2009/02511

    摘要： A mechanical resonator device (10) which has a phenomena-dependent electrical stiffness is provided. The phenomena may be temperature or acceleration, for example. The device includes a substrate (16) and a resonator (14) supported above the substrate by supports. The device further includes an electrode (12) supported above the substrate (16) adjacent the resonator by supports (18) to obtain an electrode-to-resonator gap wherein electrical stiffness generated across the gap is phenomena-dependent to take instability of resonant frequency of the device caused by the phenomena into consideration.

    ZERO TCF THIN FILM RESONATOR
    10.
    发明公开
    ZERO TCF THIN FILM RESONATOR 失效
    WITH零温度系数薄膜谐振器

    公开(公告)号：EP0950282A1

    公开(公告)日：1999-10-20

    申请号：EP97947478.0

    申请日：1997-11-13

    申请人： HONEYWELL INC.

    发明人： HERB, William, R. ,  BURNS, David, W. ,  YOUNGNER, Daniel, W.

    IPC分类号： H03H9

    CPC分类号： B81B3/0072 ,  B81B2201/0271 ,  H03H9/02448 ,  H03H9/2463 ,  H03H9/2473

    摘要： A multi-material resonant thin film beam for a micromechanical sensor having a zero temperature coefficient of frequency (TCF) which is the resonant frequency shift with temperature change. One of the materials may be polysilicon and the other material may be silicon nitride or silicon oxide. Each material has a different thermal coefficient of expansion. The proportion of the various materials is adjusted and the specific geometries are determined so that the TCF is zero. One embodiment is a microbeam composed of two polysilicon thin films with a silicon nitride thin film inserted between the polysilicon films. The thickness of the silicon nitride film may be adjusted to trim the TCF to zero. The film of nitride instead may be placed on one side of a polysilicon film to form a beam. Dual or multiple beam resonators likewise may be made with several materials. The nitride may be placed in the shank areas which join and secure the ends of the beams. Such zero TCF beams may be incorporated in microsensor structures for measuring pressure, temperature, strain and other parameters.