Abstract:
Systems and methods for a micro-electromechanical system (MEMS) device are provided. In one embodiment, a system comprises a first outer layer and a first device layer comprising a first set of MEMS devices, wherein the first device layer is bonded to the first outer layer. The system also comprises a second outer layer and a second device layer comprising a second set of MEMS devices, wherein the second device layer is bonded to the second outer layer. Further, the system comprises a central layer having a first side and a second side opposite that of the first side, wherein the first side is bonded to the first device layer and the second side is bonded to the second device layer.
Abstract:
A method of fabricating an elastomeric structure, comprising: forming a first elastomeric layer on top of a first micromachined mold, the first micromachined mold having a first raised protrusion which forms a first recess extending along a bottom surface of the first elastomeric layer; forming a second elastomeric layer on top of a second micromachined mold, the second micromachined mold having a second raised protrusion which forms a second recess extending along a bottom surface of the second elastomeric layer, bonding the bottom surface of the second elastomeric layer onto a top surface of the first elastomeric layer such that a control channel forms in the second recess between the first and second elastomeric layers; and positioning the first elastomeric layer on top of a planar substrate such that a flow channel forms in the first recess between the first elastomeric layer and the planar substrate.
Abstract:
The invention relates to a composite (1) comprising a first semiconductor substrate (4) having at least one MEMS-component (2) and at least one second semiconductor substrate (4), wherein at least one layer (6) comprising germanium is bonded eutectically with at least one layer (3) comprising aluminum. According to the invention, the layer (3) comprising aluminum is provided on the first semiconductor substrate (1) and the layer (6) comprising germanium on the second semiconductor substrate (4). The invention further relates to a production method for a composite (1).
Abstract:
Provided are integrated analysis devices having features of macroscale and nanoscale dimensions, and devices that have reduced background signals and that reduce quenching of fluorophores disposed within the devices. Related methods of manufacturing these devices and of using these devices are also provided.
Abstract:
A microchip has a resin substrate, which is provided with a first surface whereupon a channel groove is formed and a second surface on the opposite side to the first surface, and the microchip also has a resin film bonded on the first surface. A projection area is larger than the area of the first surface of the resin substrate when the resin substrate is viewed from a direction orthogonally intersecting with the first surface. Thus, warpage of the microchip can be suppressed at the time of thermally bonding the resin substrate and the resin film by a roller.
Abstract:
A composite object comprises two components (2a, 2b) made of an oxidic material, which at an elevated temperature conducts ions, said components being connected to each other in a medium-tight manner by way of a solder bridge (4) in a connecting region (6) located in between. In order to form a reliable connection, it is proposed that the solder bridge is formed by a low-melting tin alloy that has a weight proportion of at least 65% tin and a melting point of no more than 350ºC and comprises at least one activating metal as an alloying constituent.
Abstract:
Provided are a microchip enabling accurate analysis by preventing a resin film from being deflected into a flow path groove to eliminate the stagnation of a liquid sample and a method of manufacturing the microchip. This microchip includes a flow path that is formed by joining a resin film onto the groove-formed surface of a resin substrate. The deflection angle of the resin film in the sectional surface of the flow path in the width direction is made to be 0 to less than 30° at respective positions of the flow path