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433 条记录 (耗时 0.014 秒)

    PLASMA PROCESSING APPARATUS
    22.
    发明公开
    PLASMA PROCESSING APPARATUS 有权
    PLASMAVERARBEITUNGSVORRICHTUNG

    公开(公告)号：EP1289003A4

    公开(公告)日：2008-07-23

    申请号：EP01919956

    申请日：2001-04-16

    申请人： TOKYO ELECTRON LTD

    发明人： HIMORI SHINJI ,  TAKAHASHI TOSHIKI ,  KOMATSU TAKUMI

    IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C16/509 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

    CPC分类号： H01J37/32082 ,  H01J37/32532

    摘要： A plasma processing apparatus for plasma processing using a high-density plasma and adaptable to finer microfabrication comprise an electrode plate provided with an upper electrode having a dielectric member or a cavity and a lower electrode serving as a susceptor and opposed to the upper electrode. The size and dielectric constant of the dielectric member are determined so that resonance may be caused by the frequency of high-frequency power fed to the central portion of the back of the electrode and that the electric field is perpendicular to the electrode plate may be produced so as to reduce the uneveness of the distribution of the electric field over the top surface of the electrode.

    摘要翻译： 一种使用高密度等离子体并适用于更精细微制造的等离子体处理装置包括一个电极板，该电极板设置有具有电介质构件或空腔的上电极和用作基座并与上电极相对的下电极。 电介质部件的大小和介电常数被确定为使得可以由供给到电极背面的中央部分的高频电力的频率引起共振，并且可以产生电场垂直于电极板 以减少电极顶部表面上电场分布的不均匀性。

    APPARATUS FOR PLASMA PROCESSING
    25.
    发明授权
    APPARATUS FOR PLASMA PROCESSING 有权
    设备用于等离子体处理

    公开(公告)号：EP1276356B1

    公开(公告)日：2007-08-15

    申请号：EP01901433.1

    申请日：2001-01-18

    申请人： TOKYO ELECTRON LIMITED ,  Ando, Makoto ,  Yasaka, Yasuyoshi

    发明人： YASAKA, Yasuyoshi ,  ISHII, Nobuo, c/o Tokyo Electron Ltd. ,  SHINOHARA, Kibatsu, Nihon Koshuha Co., Ltd.

    IPC分类号： H05H1/46 ,  H01L21/3065 ,  C23C16/50 ,  C23F4/00

    摘要： A plasma device for uniform processing of large-size wafers. The device comprises a processing container (4) that is a bottomed cylinder with an upper opening covered with a quartz plate (8), the cylinder including a processing stage (10) for holding a wafer (W); a microwave device (50) for supplying TE11-mode microwave; a cylindrical waveguide (52) including a waveguide space, connected with the microwave device (50) on one end, and extending toward the quartz plate (8); a radial waveguide box (54) including a waveguide space, connected with the other end of the waveguide (52), spreading radially outward in the shape of a flange, and falling toward the quartz board (8) to serve as a side wall; and a disk-like slot antenna (60) arranged along the quartz board (8) to cover a lower opening of the waveguide box (54). A circular polarization converter (56) can be provided to rotate microwave on the axis of the cylindrical waveguide (52) and send it to the waveguide box (54).

    PLASMA GENERATING EQUIPMENT
    27.
    发明公开
    PLASMA GENERATING EQUIPMENT 审中-公开
    PLASMAERZEUGUNGSGERÄT

    公开(公告)号：EP1729551A1

    公开(公告)日：2006-12-06

    申请号：EP05721591.5

    申请日：2005-03-22

    申请人： Nissin Electric Co., Ltd.

    发明人： ONODA, Masatoshi, c/o Nissin Electric Co., Ltd. ,  TAKAHASHI, Eiji, c/o Nissin Electric Co., Ltd.

    IPC分类号： H05H1/46 ,  C23C16/509 ,  C23F4/00 ,  H01L21/205 ,  H01L21/3065

    CPC分类号： C23C16/509 ,  C23C16/24 ,  H01J37/32082

    摘要： A plasma generating device provided with a plasma generating chamber (10) and a high-frequency antenna (1) arranged in the chamber (10) for generating inductively coupled plasma by applying a high-frequency power to a gas in the chamber (10) from the antenna (1). The antenna (1) is a low-inductance antenna formed of a first portion (11) extending from the outside of the chamber (10) into the chamber (10), and a plurality of second portions (12) diverging from an inner end (11e) of the first portion (11) in an electrically parallel fashion, and having a termination (12e) directly connected to the inner wall of the grounded chamber (10). The surface of the antenna (1) is coated with an electrically insulating material. Frequency of the high-frequency power applied to the antenna may be in a range from 40 MHz to hundreds of megahertz. The plasma generating device can generate desired plasma by suppressing disadvantages such as abnormal discharge, matching failure and others, and can be constructed so that a desired processing such as film deposition can be performed.

    摘要翻译： 一种等离子体发生装置，其具有等离子体发生室（10）和布置在腔室（10）中的高频天线（1），用于通过向室（10）中的气体施加高频电力来产生电感耦合等离子体， 从天线（1）。 天线（1）是由从腔室（10）的外部延伸到腔室（10）中的第一部分（11）形成的低电感天线，以及从内部（10）分开的多个第二部分 （11e）的第一部分（11e），并且具有直接连接到接地室（10）的内壁的终端（12e）。 天线（1）的表面涂覆有电绝缘材料。 施加到天线的高频功率的频率可以在40MHz到数百MHz的范围内。 等离子体发生装置可以通过抑制诸如异常放电，匹配故障等的缺点来产生期望的等离子体，并且可以构造成可以进行期望的处理，例如膜沉积。

    Method of selective etching by using a focused ion beam, an electron beam or a laser beam
    28.
    发明公开
    Method of selective etching by using a focused ion beam, an electron beam or a laser beam 有权
    Strahleninduziertes Verfahren zum selektivenÄtzeneines材料aus einem Quarzsubstrat

    公开(公告)号：EP1710327A2

    公开(公告)日：2006-10-11

    申请号：EP06112344.4

    申请日：2006-04-07

    申请人： FEI COMPANY

    发明人： Bret, Tristan ,  Hoffmann, Patrik ,  Rossi, Michel ,  Multone, Xavier

    IPC分类号： C23F4/00

    CPC分类号： C23F4/00 ,  C23F4/02 ,  G03F1/72 ,  G03F1/74 ,  H01J2237/31744

    摘要： A method and apparatus for local beam processing using a beam activated gas to etch material are described. Compounds are disclosed that are suitable for beam-induced etching. The invention is particularly suitable for electron beam induced etching of chromium materials on lithography masks. In one embodiment, a polar compound, such as CINO 2 gas, is activated by the electron beam to selectively etch a chromium material on a quartz substrate. By using an electron beam in place of an ion beam, many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch significantly the substrate.

    摘要翻译： 描述了使用束活化气体蚀刻材料的局部束处理方法和装置。 公开了适用于光束诱导蚀刻的化合物。 本发明特别适用于光刻掩模上的铬材料的电子束诱导蚀刻。 在一个实施方案中，诸如CINO 2气体的极性化合物被电子束激活以选择性地蚀刻石英衬底上的铬材料。 通过使用电子束代替离子束，消除了与离子束掩模修复相关的许多问题，例如染色和河床。 端点检测并不重要，因为电子束和气体不会显着蚀刻衬底。

    PLASMA PROCESSING DEVICE
    29.
    发明公开
    PLASMA PROCESSING DEVICE 审中-公开
    等离子体处理装置

    公开(公告)号：EP1638139A1

    公开(公告)日：2006-03-22

    申请号：EP04733924.7

    申请日：2004-05-19

    申请人： TOKYO ELECTRON LIMITED

    发明人： MATSUURA, Hiroyuki, Tokyo Electron Limited ,  KATO, Hitoshi, Tokyo Electron Limited

    IPC分类号： H01L21/31 ,  H01L21/3065 ,  C23C16/505 ,  C23F4/00 ,  H05H1/46

    CPC分类号： H01J37/32357 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449

    摘要： The invention is intended, in a vertical type plasma processing apparatus, to prevent damage to process objects due to a plasma, and to suppress the generation of sputter due to hollow cathode discharge and the plasma, without lowering the radical utilization efficiency. A part of the inner surface of the side wall of a processing vessel 32 is provided with a vertically extending recess 74. A plasma gas supplied from a plasma gas nozzle 62 disposed in the recess 74 is converted into a plasma in an area PS between plasma electrodes 76 in the recess 74, and leaves the recess 74 toward the process objects W.

    摘要翻译： 本发明意欲在垂直型等离子体处理设备中防止由等离子体引起的处理对象的损坏，并且在不降低自由基利用效率的情况下抑制由空心阴极放电和等离子体引起的溅射的产生。 处理容器32的侧壁内表面的一部分设置有垂直延伸的凹槽74.从设置在凹槽74中的等离子体气体喷嘴62供应的等离子体气体在等离子体之间的区域PS中被转换成等离子体 电极76位于凹槽74中，并且朝着处理对象W离开凹槽74。