公开(公告)号：EP1363319B1

公开(公告)日：2009-01-07

申请号：EP03010502.7

申请日：2003-05-09

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Takayama, Toru ,  Goto, Yuugo ,  Maruyama, Junya ,  Ohno, Yumiko

IPC分类号： H01L21/20 ,  H01L21/762 ,  H01L21/68

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L2221/68368 ,  Y10T428/14

公开(公告)号：EP1432022A3

公开(公告)日：2008-01-23

申请号：EP03028233.9

申请日：2003-12-09

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Takayama, Toru ,  Maruyama, Junya ,  Ohno, Yumiko ,  Tanaka, Koichiro

IPC分类号： H01L21/68

CPC分类号： H01L21/02667 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/6835 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68354 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2223/54473 ,  H01L2224/1134 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/29198 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83102 ,  H01L2224/83192 ,  H01L2224/92125 ,  H01L2224/92247 ,  H01L2225/06524 ,  H01L2225/06555 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/3512

摘要： According to the package and the method for manufacturing the package of the present invention, a chip can be formed extremely to be thin, and manufactured at lower cost and higher throughput, and the variations of a chip thickness can be reduced without back grind that causes cracks or polishing marks. In the present invention, a semiconductor film with a thickness of at most 500µm deposited over a substrate serving as a support medium is crystallized with a CW laser light, and a chip having a semiconductor device is formed to have a total thickness of 5µm, preferably at most 2µm by using the crystallized semiconductor film. Consequently, the chip is mounted on an interposer after separating a substrate.

公开(公告)号：EP1045451A3

公开(公告)日：2006-08-02

申请号：EP00107789.0

申请日：2000-04-11

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Koyama, Jun ,  Takayama, Toru ,  Hamatani, Toshiji

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L29/423 ,  H01L29/49 ,  G02F1/1362

CPC分类号： G02F1/13454 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L29/78684

摘要： The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.

摘要翻译： 本发明主要提供允许用于有源矩阵型显示装置的大尺寸屏幕的栅极电极和栅极布线，其中为了实现该目的，本发明的结构是在同一基板上具有像素TFT 设置在显示区域和设置在显示区域周围的驱动电路TFT，其中像素TFT和驱动电路TFT的栅电极由第一导电层形成，栅电极通过与形成的栅极布线的连接器电接触 并且连接器设置在像素TFT和驱动电路TFT的沟道形成区域的外侧。

公开(公告)号：EP1528594A3

公开(公告)日：2006-06-28

申请号：EP04024864.3

申请日：2004-10-19

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Goto, Yuugo ,  Fukumoto, Yumiko ,  Takayama, Toru ,  Maruyama, Junya ,  Tsurume, Takuya

IPC分类号： H01L21/762 ,  H01L21/84

CPC分类号： H01L27/1266 ,  G02F2001/13613 ,  H01L27/3246 ,  H01L51/524 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/323 ,  H01L2227/326 ,  Y10S438/976 ,  Y10S438/977

摘要： It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.

摘要翻译： 本发明的目的是提供一种剥离方法，其不损害剥离层，并且不仅剥离具有小尺寸区域的剥离层，而且还剥离具有大尺寸面积的整个剥离层 产量。 在本发明中，在粘贴固定基板之后，通过在玻璃基板上划线或者执行激光照射来去除玻璃基板的一部分，从而提供触发。 然后，通过从去除部分进行剥离，以优选的收率进行剥离。 另外，通过用树脂覆盖除端子电极的连接部分（包括端子电极的外围区域）之外的整个面来防止裂缝。

公开(公告)号：EP1453086A3

公开(公告)日：2006-03-08

申请号：EP04004369.7

申请日：2004-02-26

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Imai, Keitaro ,  Takayama, Toru ,  Goto, Yuugo ,  Maruyama, Junya ,  Ohno, Yumiko

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L21/84

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78675 ,  H01L2221/6835 ,  H01L2221/68368

摘要： To provide a method for manufacturing a semiconductor device including a transfer step that is capable of controlling the adhesiveness of a substrate and an element-formed layer in the case of separating the element-formed layer including a semiconductor element or an integrated circuit formed over the substrate from the substrate and bonding it to another substrate. An adhesive agent made of a good adhesiveness material is formed between the semiconductor element or the integrated circuit comprising plural semiconductor elements formed over the substrate (a first substrate) and the substrate, and thus it is possible to prevent a semiconductor element from peeling off a substrate in manufacturing the semiconductor element, and further, to make it easier to separate the semiconductor element from the substrate by removing the adhesive agent after forming the semiconductor element.

公开(公告)号：EP1528594A2

公开(公告)日：2005-05-04

申请号：EP04024864.3

申请日：2004-10-19

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Goto, Yuugo ,  Fukumoto, Yumiko ,  Takayama, Toru ,  Maruyama, Junya ,  Tsurume, Takuya

IPC分类号： H01L21/762 ,  H01L21/84

CPC分类号： H01L27/1266 ,  G02F2001/13613 ,  H01L27/3246 ,  H01L51/524 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/323 ,  H01L2227/326 ,  Y10S438/976 ,  Y10S438/977

摘要： It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.

摘要翻译： 本发明的目的是提供一种不损伤剥离层的剥离方法，并且不仅剥离具有小尺寸区域的剥离层，而且还可以剥离具有大尺寸区域的整个剥离层 产量。 在本发明中，在粘贴固定基板之后，通过在导致提供触发的玻璃基板上划线或进行激光照射来去除玻璃基板的一部分。 然后，通过从去除部分剥离而以优选的收率进行剥离。 此外，通过用树脂覆盖除了端子电极（包括端子电极的周边区域）的连接部分之外的整个表面来防止裂纹。

公开(公告)号：EP1453088A2

公开(公告)日：2004-09-01

申请号：EP04004083.4

申请日：2004-02-23

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Arai, Yasuyuki ,  Ishikawa, Akira ,  Takayama, Toru ,  Maruyama, Junya ,  Goto, Yuugo ,  Ohno, Yumiko ,  Tachimura, Yuko

IPC分类号： H01L21/82 ,  G06K19/04

CPC分类号： H01L27/1266 ,  G06K19/07749 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603

摘要： The present invention provides an ultrathin thin film integrated circuit and a thin film integrated circuit device including the thin film integrated circuit device. Accordingly, the design of a product is not spoilt while an integrated circuit formed from a silicon wafer, which is thick and produces irregularities on the surface of the product container. The thin film integrated circuit according to the present invention includes a semiconductor film as an active region (for example a channel region in a thin film transistor), unlike an integrated circuit formed from a conventional silicon wafer. The thin film integrated circuit according to the present invention is thin enough that the design is not spoilt even when a product such as a card or a container is equipped with the thin film integrated circuit.

摘要翻译： 本发明提供一种超薄薄膜集成电路和包括薄膜集成电路器件的薄膜集成电路器件。 因此，产品的设计不会被损坏，而由硅晶片形成的集成电路是厚的并且在产品容器的表面上产生不规则性。 根据本发明的薄膜集成电路不同于由常规硅晶片形成的集成电路，包括半导体膜作为有源区（例如，薄膜晶体管中的沟道区）。 根据本发明的薄膜集成电路足够薄，即使当诸如卡或容器的产品配备有薄膜集成电路时，该设计也不会损坏。

公开(公告)号：EP1437695A2

公开(公告)日：2004-07-14

申请号：EP03029235.3

申请日：2003-12-18

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Takayama, Toru ,  Maruyama, Junya ,  Goto, Yuugo ,  Ohno, Yumiko ,  Akiba, Mai

IPC分类号： G07F7/10 ,  G06K19/067

CPC分类号： G06K19/077 ,  G06K19/07703 ,  G06Q20/105 ,  G06Q20/3415 ,  G07F7/1008 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01005 ,  H01L2224/45147

摘要： It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.

摘要翻译： 本发明的目的是提供一种高度复杂的功能IC卡，其可以通过防止诸如改变脸部照片的伪造，以及显示其他图像以及脸部照片来确保安全性。 一种IC卡，包括显示装置和多个薄膜集成电路; 其中所述显示装置的驱动由所述多个薄膜集成电路控制; 通过使用多晶半导体膜形成用于多个薄膜集成电路的半导体元件和显示装置; 层叠多个薄膜集成电路; 显示装置和多个薄膜集成电路装配在同一印刷电路板上; IC卡的厚度为0.05mm〜1mm。

公开(公告)号：EP1154383A3

公开(公告)日：2004-03-17

申请号：EP01111375.0

申请日：2001-05-09

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Koyama, Jun ,  Arai, Yasuyuki ,  Suzawa, Hideomi ,  Ono, Koji ,  Takayama, Toru

IPC分类号： G07C9/00

CPC分类号： G06K9/0004 ,  G07C9/00158 ,  H04M1/673 ,  H04M1/72519

摘要： It is an object to provide an user identity authentication system and an user identity authentication method with the Internet and a mobile information communication device. The mobile information communication device includes a liquid crystal device with a built-in image sensor. The image sensor reads individual information of a user, and user's identity is authenticated based on the individual information. A result of the authentication is unicast via the Internet. Alternatively, it is judged whether or not the result of the authentication is required to be unicast in accordance with a degree of requirement preset in the mobile information communication device or a destination terminal of communication, and the result is unicast via the Internet only when needed.

公开(公告)号：EP1119053A2

公开(公告)日：2001-07-25

申请号：EP01200990.8

申请日：1994-02-15

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Takemura, Yasuhiko ,  Zhang, Hongyong ,  Takayama, Toru ,  Uochi, Hideki

IPC分类号： H01L29/786 ,  H01L21/20 ,  H01L21/336

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78696

摘要： Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands, stripes, lines, or dots of nickel, iron, cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles, or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.

摘要翻译： 通过在低于非晶硅的正常结晶温度或低于基板的玻璃化转变点的温度下退火基本上非晶硅膜以使硅膜结晶的方法来制造诸如薄膜晶体管的半导体器件。 镍，铁，钴或铂的岛，条纹，线或点，镍，铁，钴或铂的硅化物，乙酸盐或硝酸盐，含有各种盐，包含至少一种镍， 铁，钴和铂用作结晶的起始原料。 这些材料形成在非晶硅膜上或下方。