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346 条记录 (耗时 0.018 秒)

    TRANSPORT MEMBER FOR TRANSPORTING PLATE-SHAPED SUBSTRATES WHICH ARE TO BE ELECTROLYTICALLY GALVANIZED IN A BATH, AND DEVICE FOR AND METHOD OF ELECTROLYTICALLY GALVANIZING SUCH SUBSTRATES
    33.
    发明公开
    TRANSPORT MEMBER FOR TRANSPORTING PLATE-SHAPED SUBSTRATES WHICH ARE TO BE ELECTROLYTICALLY GALVANIZED IN A BATH, AND DEVICE FOR AND METHOD OF ELECTROLYTICALLY GALVANIZING SUCH SUBSTRATES 有权
    FOR电解锌输送元件TRANSPORT圆盘状基板在一个坏和装置AND METHOD FOR电解锌这样的基板

    公开(公告)号：EP3080018A1

    公开(公告)日：2016-10-19

    申请号：EP14737036.5

    申请日：2014-06-18

    申请人： Meco Equipment Engineers B.V.

    发明人： KLOOSTERBOER, Robert ,  KIVITS, Marc Henricus Marinus

    IPC分类号： B65G17/32 ,  B65G15/58 ,  C25D17/00 ,  C25D17/06 ,  C25D5/00

    CPC分类号： C25D17/06 ,  B65G15/58 ,  B65G49/02 ,  C25D3/22 ,  C25D5/006 ,  C25D5/34 ,  C25D7/126 ,  C25D17/007

    摘要： The invention relates to a transport member for transporting plate- shaped substrates which are to be electrolytically galvanized in a bath, comprising a carrier belt with first contact members fastened thereto which each have a first contact portion that contacts a first side of a substrate under prestress and with electrical conduction in an active position and that is clear of the substrate in an inactive position. The transport member further comprises second contact members which each have a second contact portion that in an active position conductively contacts a second side of the same substrate under prestress and that in an inactive position lies free from said substrate, while the transport member further comprises blocking means for blocking the first contact members and the second contact members in the inactive positions thereof during the electrolytic galvanizing process. The invention also relates to a device for electrolytically galvanizing substrates in a bath with an electrolytic solution and to a galvanizing method.

    摘要翻译： 本发明涉及的输送构件用于输送板形衬底，其是在一个浴中电解镀锌，其包括具有固定在其上哪个第一接触部件的载体带分别具有一个第一接触部分做接触衬底的第一侧上在预应力下 并用在activePosition电传导并且做是明确的基板的在到非工作位置。 传输构件还包括第二接触构件，其每一个都具有第二接触部分做在activePosition导电触点在预应力下相同的衬底的第二侧和非工作位置的确在位于从所述基板的分类，而传送部件还包括阻挡 装置，用于在电解镀锌工艺其阻断所述第一接触构件和第二接触构件在不工作位置。 因此本发明涉及一种设备，用于在电解浴与电解液以及一种镀锌方法镀锌衬底。

    METHOD FOR PRODUCING PLATED ARTICLE
    34.
    发明公开
    METHOD FOR PRODUCING PLATED ARTICLE 审中-公开
    VERFAHREN ZUR HERSTELLUNG EINES PLATTIERTEN ARTIKELS

    公开(公告)号：EP3061851A1

    公开(公告)日：2016-08-31

    申请号：EP14856618.5

    申请日：2014-10-24

    申请人： OM Sangyo Co., Ltd.

    发明人： TAKAMIZAWA, Masao ,  NISHIMURA, Yoshiyuki ,  FUKUDA, Chisa

    IPC分类号： C25D3/12 ,  C25D5/00

    CPC分类号： C25D3/12 ,  C23C18/1653 ,  C25D3/562 ,  C25D5/16 ,  C25D7/123 ,  C25D21/12

    摘要： There is provided a method for producing a plated article, comprising immersing a substrate made of a conductive metal in a plating solution and forming a plating layer on the substrate by electroplating, wherein the plating solution is a solution containing 0.01 to 1 mol/L of Ni ions with pH of 6 or more; and a porous Ni plating layer is formed by performing the electroplating at a cathode current density of 10 A/dm 2 or more. This method allows for easily producing a plated article wherein a uniform porous Ni plating layer is formed on the surface of a substrate.

    摘要翻译： 提供一种电镀制品的制造方法，其特征在于，将由导电性金属制成的基板浸渍在电镀液中，通过电镀在所述基板上形成镀覆层，所述镀液为含有0.01〜1mol / L的 pH为6以上的Ni离子; 通过以10A / dm 2以上的阴极电流密度进行电镀而形成多孔Ni镀层。 该方法允许容易地制造其中在基板的表面上形成均匀的多孔Ni镀层的电镀制品。

    Improved method of metal plating semiconductors
    38.
    发明公开
    Improved method of metal plating semiconductors 审中-公开
    Verbittenes Verfahren zur Metallplattierung von Halbleitern

    公开(公告)号：EP2684983A2

    公开(公告)日：2014-01-15

    申请号：EP13175500.1

    申请日：2013-07-08

    申请人： Rohm and Haas Electronic Materials LLC

    发明人： Wei, Lingyun ,  Hamm, Gary ,  Karaya Jr., Narsmoul

    IPC分类号： C25D5/00 ,  C23C18/08 ,  C23C18/14 ,  H01L31/18 ,  C25D7/12 ,  C25D5/10

    CPC分类号： H01L21/02697 ,  C25D5/10 ,  C25D7/126 ,  H01L31/022425 ,  Y02E10/50

    摘要： A metal underlayer is selectively plated on semiconductor wafers immediately followed by plating copper on the metal underlayer using a low internal stress copper plating bath. Additional metallization may be done to build up the metal layers using conventional metal plating baths and methods to form current tracks. Formation of metal silicides is avoided. Good adhesion of the metals to the semiconductors is achieved. The metalized semiconductors may be used in the manufacture of photovoltaic devices.

    摘要翻译： 将金属底层选择性地电镀在半导体晶片上，然后使用低内应力铜电镀浴在金属底层上镀铜。 可以进行额外的金属化，以使用常规的金属电镀槽和形成电流轨道的方法来建立金属层。 避免了金属硅化物的形成。 实现了金属对半导体的良好的附着。 金属化半导体可用于制造光伏器件。