摘要:
Microelectromechanical device (1) comprising a supporting body (2), containing semiconductor material and a movable mass (3), constrained to the supporting body with a relative degree of freedom with respect to at least one motion direction (D), within a range (I) of admissible positions. The device also comprises stopper elements (7), operable by the movable mass due to movements along the at least one motion direction and configured to apply stop forces (FC) to opposite sides of the movable mass, transversely to the at least one motion direction, when the movable mass reaches a respective endpoint (I1, I2) of the range of admissible positions, so as to prevent the movable mass from exceeding the respective endpoint.
摘要:
An inertial sensor (20) and an electronic device (100) are provided. Amass block (312 or 315) of the inertial sensor (20) for detecting a Y-axis is driven to have a displacement component in an X-axis direction. When the inertial sensor (20) is subject to an angular velocity component around a Z-axis, the mass block (312 or 315) for detecting the Y-axis may pull a mass block (313 or 316) for detecting the Z-axis, so that the mass block (313 or 316) for detecting the Z-axis can have a displacement component in a Y-axis direction. The inertial sensor (20) can implement principle decoupling between Y-axis detection and Z-axis detection, thereby helping to consider both a size and detection precision of the inertial sensor (20).
摘要:
A device includes a substrate, a first electrode formed on the substrate and a structural layer formed on the substrate. The structural layer includes a movable mass and a fixed portion, the movable mass being suspended above the substrate and the first electrode being interposed between the substrate and the movable mass. A second electrode is spaced apart from an upper surface of the movable mass by a gap and an anchor couples the second electrode to the fixed portion of the structural layer. A method entails integrating formation of the second electrode into a wafer process flow in which the first electrode and the structural layer are formed.
摘要:
A microelectromechanical sensor device that comprises a seismic mass, and a spring structure that defines for the seismic mass a drive direction, and a sense direction that is perpendicular to the drive direction. A capacitive transducer structure includes a stator to be anchored to a static support structure, and a rotor mechanically connected to the seismic mass. The capacitive transducer structure is arranged into a slanted orientation where a non-zero angle is formed between the drive direction and a tangent of the stator surface. The slated capacitive transducer structure creates an electrostatic force to decrease quadrature error of the linear oscillation.
摘要:
A sensor device includes a first CMOS chip and a second CMOS chip with a first moving-gate transducer formed in the first CMOS chip for implementing a first 3-axis inertial sensor and a second moving-gate transducer formed in the second CMOS chip for implementing a second 3-axis inertial sensor. An ASIC for evaluating the outputs of the first 3-axis inertial sensor and the second 3-axis inertial sensor is distributed between the first CMOS chip and the second CMOS chip.
摘要:
MEMS mass-spring-damper systems (including MEMS gyroscopes and accelerometers) using an out-of-plane (or vertical) suspension scheme, wherein the suspensions are normal to the proof mass, are disclosed. Such out-of-plane suspension scheme helps such MEMS mass-spring-damper systems achieve inertial grade performance. Methods of fabricating out-of-plane suspensions in MEMS mass-spring-damper systems (including MEMS gyroscopes and accelerometers) are also disclosed.
摘要:
An integrated MEMS inertial sensor device is described. The device includes a MEMS inertial sensor overlying a CMOS substrate. The MEMS inertial sensor includes a drive frame coupled to the surface region via at least one drive spring, a sense mass coupled to the drive frame via at least a sense spring, and a sense electrode disposed underlying the sense mass. The device also includes at least one pair of quadrature cancellation electrodes disposed within a vicinity of the sense electrode, wherein each pair includes an N-electrode and a P-electrode.