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    PHOTODIODE DEVICE AND PHOTODIODE DETECTOR
    31.
    发明公开
    PHOTODIODE DEVICE AND PHOTODIODE DETECTOR 审中-公开

    公开(公告)号：EP3550614A1

    公开(公告)日：2019-10-09

    申请号：EP17879355.0

    申请日：2017-08-08

    申请人： Nuctech Company Limited

    发明人： ZHANG, Lan ,  HU, Haifan ,  CAO, Xuepeng ,  LI, Jun

    IPC分类号： H01L31/0352 ,  H01L31/109

    摘要： A photodiode device and a photodiode detector are provided. According to an embodiment, the photodiode device may include a first type lightly doped semiconductor base including a first surface and a second surfaces opposite to each other, a first electrode region being first type heavily doped and disposed on the first surface of the semiconductor base, a second electrode region being second type heavily doped and disposed on the second surface of the semiconductor base, wherein the first surface is a light incident surface.

    PRODUCING HETEROSTRUCTURES (VARIANTS) FOR THE MID-INFRARED RANGE
    33.
    发明公开
    PRODUCING HETEROSTRUCTURES (VARIANTS) FOR THE MID-INFRARED RANGE 审中-公开
    HERSTELLUNG VON HETEROSTRUKTUREN（VARIANTEN）FÜRDEN MITTELINFRAROTBEREICH

    公开(公告)号：EP2897158A4

    公开(公告)日：2016-08-31

    申请号：EP13874680

    申请日：2013-09-13

    申请人： LTD LIABILITY COMPANY LED MICROSENSOR NT

    发明人： KIZHAEV SERGEI SERGEEVICH

    IPC分类号： H01L21/205 ,  H01L21/02 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/109 ,  H01L31/18 ,  H01L33/30 ,  H01L33/36

    CPC分类号： H01L21/02538 ,  H01L21/02455 ,  H01L21/0262 ,  H01L31/022408 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/109 ,  H01L33/0083 ,  H01L33/06 ,  H01L33/30 ,  Y02E10/544

    摘要： The present invention relates to a technique of producing spontaneous radiation sources on the basis on A III B V semiconductor compounds for the spectral range of 2.6 - 4.7 µm, and to a technology of producing photosensitive structures for the spectral range of 2.0 - 4.7 µm. In the first embodiment, the heterostructure comprises a substrate containing InAs, a barrier layer which contains InSbP and which is arranged on the substrate, and an active layer which contains InAsSbP and which is arranged on the barrier layer. Light-emitting diodes produced on the basis of the first embodiment of the heterostructure emit at a wavelength in the range of 2.6 - 3.1 µm. In the second embodiment, the heterostructure comprises a substrate containing InAs, an active area which contains InAsSb and which is arranged on the substrate, and a barrier layer which contains InSbP and which is arranged on the active area. The active area can comprise a InAsSb bulk active layer, InAs/InAsSb quantum wells or a GaInAs/InAsSb strained superlattice. Light-emitting diodes produced on the basis of the second embodiment of the heterostructure emit at a wavelength in the range of 3.1- 4.7pm, and photodiodes have broadband sensitivity in the range of 2.0 - 4.7 µm. In the method of producing a heterostructure, tert-butylarsine is used as a source of arsenic, and tert-butylphosphine is used as a source of phosphorus.

    摘要翻译： 本发明涉及一种在2.6-7.4μm的光谱范围内基于A III B V半导体化合物生产自发辐射源的技术，以及产生光谱范围为2.0-4.7μm的光敏结构的技术。 在第一实施例中，异质结构包括含有InAs的衬底，包含InSbP并且布置在衬底上的阻挡层，以及包含InAsbB并且布置在阻挡层上的有源层。 基于异质结构的第一实施例制造的发光二极管的发射波长在2.6-3.1μm的范围内。 在第二实施例中，异质结构包括含有InAs的衬底，其包含InAsSb并且布置在衬底上的有源区，以及包含InSbP并且布置在有源区上的阻挡层。 有源区可包括InAsSb体活性层，InAs / InAsSb量子阱或GaInAs / InAsSb应变超晶格。 基于异质结构的第二实施例产生的发光二极管的波长为3.1-4.7μm，光电二极管的宽度灵敏度在2.0-4.7μm的范围内。 在异质结构的制造方法中，使用叔丁基胂作为砷源，叔丁基膦用作磷源。

    FIELD EFFECT TRANSISTOR WITH ENHANCED INSULATOR STRUCTURE
    38.
    发明公开
    FIELD EFFECT TRANSISTOR WITH ENHANCED INSULATOR STRUCTURE 审中-公开
    具有改进的绝缘体结构场效应晶体管

    公开(公告)号：EP1690286A4

    公开(公告)日：2009-07-08

    申请号：EP04817951

    申请日：2004-12-06

    申请人： INT RECTIFIER CORP

    发明人： BEACH ROBERT

    IPC分类号： H01L21/3205 ,  H01L21/336 ,  H01L21/4763 ,  H01L29/20 ,  H01L29/739 ,  H01L29/778 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

    CPC分类号： H01L29/2003 ,  H01L29/7787

    摘要： A III-nitride based field effect transistor obtains improved performance characteristics through manipulation of the relationship between the in-plane lattice constant of the interface of material layers. A high mobility two dimensional electron gas generated at the interface of the III-nitride materials permits high current conduction with low ON resistance, and is controllable through the manipulation of spontaneous polarization fields obtained according to the characteristics of the III-nitride material. The field effect transistor produced can be made to be a nominally on device where the in-plane lattice constants of the material forming the interface match. A nominally off device may be produced where one of the material layers has an in-plane lattice constant that is larger than that of the other layer material. The layer materials are preferably InAlGaN/GaN layers that are particularly tailored to the characteristics of the present invention.