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公开(公告)号：EP3429003B1
公开(公告)日：2021-04-14
申请号：EP17762705.6
申请日：2017-01-18
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公开(公告)号：EP2863523B1
公开(公告)日：2018-12-12
申请号：EP13806935.6
申请日：2013-06-17
申请人： Toyo Tanso Co., Ltd.
摘要： A carbonaceous material is fabricated by kneading of carbon powder and a binder. A particle diameter of the carbonaceous material is adjusted after the fabricated carbonaceous material is granulated. A brush material is fabricated by mixing of the carbonaceous material of which the particle diameter is adjusted and metal powder. A brush is completed by forming and thermal processing of the fabricated brush material. In this case, the particle diameter of the carbonaceous material is adjusted in a constant range before the carbonaceous material and the metal powder are mixed such that an average particle diameter of the carbonaceous material in the brush is not less than 300 µm and not more than 2000 µm. Alternatively, a ratio of the volume of the carbonaceous material having the particle diameter of not less than 300 µm to the volume of the brush is adjusted to not less than 50%.
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公开(公告)号：EP3223302A4
公开(公告)日：2018-07-25
申请号：EP15861199
申请日：2015-11-17
申请人： TOYO TANSO CO
发明人： YABUKI NORIHITO , TORIMI SATOSHI , NOGAMI SATORU
IPC分类号： H01L21/265 , H01L21/324 , H01L21/336 , H01L21/673 , H01L21/76 , H01L29/16 , H01L29/78
CPC分类号： H01L21/046 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/3247 , H01L21/67115 , H01L21/67346 , H01L21/7602 , H01L29/1608 , H01L29/66068 , H01L29/7813
摘要： Provided is a SiC substrate treatment method for, with respect to a SiC substrate (40) that has, on its surface, grooves (41), activating ions while preventing roughening of the surface of the substrate. In the method, an ion activation treatment in which the SiC substrate (40) is heated under Si vapor pressure is performed to the SiC substrate (40) has, on its surface, an ion implantation region (46) in which ions have been implanted, and has the grooves (41) provided in a region including at least the ion implantation region (46), thereby ions that are implanted in the SiC substrate (40) is activated while etching the surface of the substrate.
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公开(公告)号：EP2955167B1
公开(公告)日：2018-07-25
申请号：EP14748688.0
申请日：2014-01-28
申请人： Toyo Tanso Co., Ltd.
发明人： SHINOHARA, Masato
IPC分类号： C04B41/89 , C04B41/87 , C23C16/458 , C30B25/12 , C30B29/36 , H01L21/683
CPC分类号： C04B41/89 , C04B35/522 , C04B41/00 , C04B41/009 , C04B41/4529 , C04B41/5059 , C04B41/5061 , C04B41/52 , C04B41/53 , C23C16/4581 , C30B29/36 , C30B35/00 , H01L21/683 , H01L21/68757 , Y10T428/24612 , Y10T428/265 , Y10T428/30 , C04B41/4531 , C04B41/4519 , C04B41/5001 , C04B41/5346 , C04B41/455 , C04B41/5057
摘要： Provided is a silicon carbide-tantalum carbide composite having excellent durability. A silicon carbide-tantalum carbide composite (1) includes: a body (10) whose surface layer is at least partly formed of a first silicon carbide layer (12); a tantalum carbide layer (20) ; and a second silicon carbide layer (13). The tantalum carbide layer (20) is disposed over the first silicon carbide layer (12). The second silicon carbide layer (13) is interposed between the tantalum carbide layer (20) and the first silicon carbide layer (12). The second silicon carbide layer (13) has a C/Si composition ratio of not less than 1.2 as measured by X-ray photoelectron spectroscopy. The second silicon carbide layer (13) has a peak intensity ratio G/D of not less than 1.0 between the G-band and D-band of carbon as measured by Raman spectroscopy.
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公开(公告)号：EP3225589A4
公开(公告)日：2018-07-18
申请号：EP15863771
申请日：2015-11-25
申请人： TOYO TANSO CO
发明人： HOSOKAWA TOSHIHIRO , MISAKI NOBUYA
IPC分类号： C01B32/182 , H01M4/96 , H01M12/06 , H01M12/08
CPC分类号： H01M4/96 , C01B31/0423 , C01B32/225 , C01P2006/40 , H01M4/8668 , H01M12/06 , H01M12/08 , H01M2004/021 , H01M2004/8689 , Y02E60/128
摘要： An expanded graphite sheet and a battery using the expanded graphite sheet are provided, that can inhibit the expanded graphite sheet from swelling even when the expanded graphite sheet is used for, for example, a positive electrode for an air battery. An expanded graphite sheet includes an expanded graphite and has a surface water contact angle of greater than or equal to 90 degrees and a surface resistivity of less than or equal to 70 m©/sq. It is desirable that a polyolefin resin be contained in the expanded graphite sheet in a dispersed state. It is desirable that the polyolefin resin be polypropylene.
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68.发明公开
公开(公告)号：EP3229297A4
公开(公告)日：2018-05-16
申请号：EP15866112
申请日：2015-12-04
发明人： OKANO HIROSHI , KUROSAKI TOMOFUMI , TSURUOKA TAKUROU , HOSOKAWA TOSHIHIRO , MISAKI NOBUYA , YUKI TETSUYA
CPC分类号： H01M4/133 , H01M4/1393 , H01M4/86 , H01M4/8647 , H01M4/88 , H01M4/8875 , H01M4/90 , H01M4/96 , H01M12/06 , H01M12/08 , H01M2004/028 , H01M2004/8689 , Y02E60/128
摘要： A positive electrode for an air battery that can remarkably improve the battery performance is provided by uniformly dispersing fine Nb (Nb oxide) therein. An air battery using the positive electrode as well as a method of manufacturing the positive electrode is also provided. A positive electrode for an air battery includes an expanded graphite sheet containing expanded graphite and Nb dispersed within the sheet. It is desirable that the Nb be contained in a weight proportion of from 5 ppm to 50000 ppm with respect to the expanded graphite.
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公开(公告)号：EP3223303A1
公开(公告)日：2017-09-27
申请号：EP15861337.2
申请日：2015-11-17
发明人： TORIMI, Satoshi , SHINOHARA, Masato , TERAMOTO, Youji , YABUKI, Norihito , NOGAMI, Satoru , KANEKO, Tadaaki , ASHIDA, Koji , KUTSUMA, Yasunori
IPC分类号： H01L21/302 , C30B29/36 , C30B33/12
CPC分类号： H01L21/30604 , C30B29/36 , C30B33/12 , C30B35/002 , H01L21/302 , H01L21/67063
摘要： Provided is a method for controlling the rate of etching of a SiC substrate based on a composition of a storing container. The etching method of the present invention is for etching the SiC substrate by heating the SiC substrate under Si vapor pressure, in a state where the SiC substrate is stored in a crucible. The crucible is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The rate of etching of the SiC substrate is controlled based on difference in a composition of the tantalum silicide layer.
摘要翻译： 提供了一种基于储存容器的组成来控制SiC衬底的蚀刻速率的方法。 本发明的蚀刻方法用于在将SiC基板收纳在坩埚中的状态下，通过在Si蒸气压下加热SiC基板来对SiC基板进行蚀刻。 坩埚由钽金属形成，并且具有设置在钽金属的内部空间侧上的碳化钽层和设置在比碳化钽层更靠近内部空间侧的侧面上的硅化钽层。 基于钽硅化物层的组成差异来控制SiC衬底的蚀刻速率。
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公开(公告)号：EP3054570A4
公开(公告)日：2017-06-07
申请号：EP14850455
申请日：2014-10-01
申请人： TOYO TANSO CO
发明人： HOZUMI FUMIHIRO
CPC分类号： H01R39/22 , C04B35/522 , C04B35/532 , C04B2235/3262 , C04B2235/407 , C04B2235/425 , C04B2235/446 , C04B2235/48 , C04B2235/5436 , C04B2235/604 , C22C1/05 , H01R39/20 , H01R39/26 , H01R43/12
摘要： A carbonaceous material is fabricated by a mixture of carbon powder and a binder. 10 % by weight or more and 60 % by weight or less of metal powder to the fabricated carbonaceous material is mixed. The mixed carbonaceous material and metal powder are pressurized and formed. A brush base material is fabricated by burning of the pressurized and formed carbonaceous material and metal powder. The fabricated brush base material is impregnated with oil. An impregnation rate of the oil to the mixed carbonaceous material and metal powder may be 0.5 % by weight or more, for example.
摘要翻译： 碳质材料由碳粉和粘合剂的混合物制成。 将10重量％以上且60重量％以下的金属粉末混合到所制造的碳质材料中。 混合的碳质材料和金属粉末被加压和形成。 通过燃烧加压和形成的碳质材料和金属粉末来制造刷基材料。 制成的刷基材料用油浸渍。 油对混合碳质材料和金属粉末的浸渍率可以为例如0.5重量％以上。
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