APPARATUS FOR RECOVERING METAL
    61.
    发明公开
    APPARATUS FOR RECOVERING METAL 审中-公开
    VORRICHTUNG ZURRÜCKGEWINNONVON金属

    公开(公告)号:EP1798312A1

    公开(公告)日:2007-06-20

    申请号:EP05780242.3

    申请日:2005-08-12

    IPC分类号: C25C7/08 C25C7/02

    CPC分类号: C25C7/007 C25C7/02 C25C7/08

    摘要: An apparatus for recovering a metal, which comprises a metal-recovering board (2) having an electrodeposition surface (2a, 2t) for the attachment of a metal component (R) precipitated from a solution and an insulating material (2b) formed around a pattern of the electrodeposition surface (2a, 2t). The metal-recovering board (2) is immersed in a metal-containing solution in an electrolytic treatment vessel (1), and thereby the metal in the solution is selectively precipitated on the electrodeposition surface (2a, 2t) and is converted to a bulk. The resultant metal bulk is scraped together for recovery with a blade (6) in a form as it is. The above apparatus for recovering a metal can be suitably used for recovering a metal in a solution in a state allowing easy reuse with good efficiency.

    摘要翻译: 一种用于回收金属的装置,其包括具有电沉积表面(2a,2t)的金属回收板(2),用于附着从溶液沉淀的金属组分(R)和形成在其上的绝缘材料(2b) 电沉积表面(2a,2t)的图案。 将金属回收板(2)浸渍在电解处理容器(1)中的含金属溶液中,从而将溶液中的金属选择性地析出在电沉积面(2a,2t)上,并转化成块状 。 将所得到的金属体刮擦在一起以用于以原样形式的叶片(6)进行回收。 上述用于回收金属的装置可以适当地用于在容易再利用的状态下以良好的效率回收溶液中的金属。

    GaN SEMICONDUCTOR DEVICE
    62.
    发明公开
    GaN SEMICONDUCTOR DEVICE 审中-公开
    GAN-HALBLEITERBAUELEMENT

    公开(公告)号:EP1744371A1

    公开(公告)日:2007-01-17

    申请号:EP05736664.3

    申请日:2005-05-02

    IPC分类号: H01L29/47 H01L29/872

    CPC分类号: H01L29/7787 H01L29/2003

    摘要: A GaN semiconductor device which has a low on-resistance, has a very small leak current when a reverse bias voltage is applied and is very excellent in withstand voltage characteristic, said GaN semiconductor device having a structure being provided with a III-V nitride semiconductor layer containing at least one hetero junction structure of III-V nitride semiconductors having different band gap energies; a first anode electrode arranged on a surface of said III-V nitride semiconductor by Schottky junction; a second anode electrode which is arranged on the surface of said III- V nitride semiconductor layer by Schottky junction, is electrically connected with said first anode electrode and forms a higher Schottky barrier than a Schottky barrier formed by said first anode electrode; and an insulating protection film which is brought into contact with said second anode electrode and is arranged on the surface of said III-V nitride semiconductor layer.

    摘要翻译: 具有低导通电阻的GaN半导体器件,当施加反向偏置电压时具有非常小的漏电流并且具有非常优异的耐电压特性,所述GaN半导体器件具有设置有III-V族氮化物半导体 包含具有不同带隙能量的III-V族氮化物半导体的至少一个异质结结构的层; 通过肖特基结布置在所述III-V族氮化物半导体的表面上的第一阳极电极; 通过肖特基结布置在所述III-V族氮化物半导体层的表面上的第二阳极电极与所述第一阳极电连接并形成比由所述第一阳极形成的肖特基势垒更高的肖特基势垒; 以及与所述第二阳极电极接触并设置在所述III-V族氮化物半导体层的表面上的绝缘保护膜。

    METHOD OF DESIGNING OPTICAL PULSE SHAPING DEVICE AND OPTICAL PULSE SHAPING DEVICE
    63.
    发明公开
    METHOD OF DESIGNING OPTICAL PULSE SHAPING DEVICE AND OPTICAL PULSE SHAPING DEVICE 审中-公开
    法草案装置用于形成光脉冲和装置成形的光脉冲

    公开(公告)号:EP1744207A1

    公开(公告)日:2007-01-17

    申请号:EP05721024.7

    申请日:2005-03-17

    IPC分类号: G02F1/365

    摘要: The present invention provides a method for designing an optical pulse shaper including a first optical propagation line unit having a nonlinear medium and a dispersion medium concatenated, including: specifying design specifications of the first optical propagation line unit; and based on the design specification, calculating a quasi-periodic stationary pulse of which a waveform of an input optical pulse to the first optical propagation line unit is similar to a waveform of an output pulse from the first optical propagation line unit.

    摘要翻译: 本发明提供了用于光脉冲成形器,其包括具有非线性介质和分散介质级联,第一光传播线路单元的设计的方法,包括:指定第一光传播线路单元的设计规格; 并且基于设计规格,计算其中的准周期性静止脉冲的输入光脉冲到第一光传播线路单元的波形类似于从第一光传播线路单元的输出脉冲的波形。

    THERMOPLASTIC RESIN FOAM
    65.
    发明公开
    THERMOPLASTIC RESIN FOAM 审中-公开
    THERMOPLASTHARZSCHAUMSTOFF

    公开(公告)号:EP1717265A1

    公开(公告)日:2006-11-02

    申请号:EP05775961.5

    申请日:2005-08-31

    摘要: An object of the present invention is to provide a thermoplastic resin sheet which has both high reflectance ratio and excellent shape-holding property suitable for backlights and illumination boxes for use in illumination signboards, illumination fixtures and displays and illumination boxes.
    The thermoplastic resin foam is manufactured by a manufacturing method comprising a process for containing inert gas by holding thermoplastic resin sheet containing metallic oxide in a pressurized inert gas atmosphere and a process for heating the thermoplastic resin sheet in which the inert gas is contained at a temperature higher than the softening temperature of the thermoplastic resin, under normal pressure, and foaming the resin.

    摘要翻译: 本发明的目的是提供一种热塑性树脂片,其具有高反射率和适合于用于照明招牌,照明器具和显示器和照明箱的背光和照明盒的良好保形性。 热塑性树脂发泡体是通过包含惰性气体的制造方法制造的,该方法包括在加压惰性气体气氛中保持含有金属氧化物的热塑性树脂片材,以及加热含有惰性气体的热塑性树脂片材的温度 高于热塑性树脂的软化温度,并在常压下发泡。

    Semiconductor laser device and semiconductor laser module using the same
    68.
    发明公开
    Semiconductor laser device and semiconductor laser module using the same 审中-公开
    Halbleiterlaservorrichtung und diese verwendende Halbleiterlasermodule

    公开(公告)号:EP1603206A2

    公开(公告)日:2005-12-07

    申请号:EP05108306.1

    申请日:2000-02-03

    IPC分类号: H01S5/10 H01S5/028 H01S5/024

    摘要: In the semiconductor laser device of the present invention, a semiconductor stacked structure including an active layer comprising a strained multi-quantum well structure is formed on a substrate 1, a cavity length is larger than 1000 µm but equal to or smaller than 1800 µm, and a low-reflection film S 1 having a reflectance of 3% or less is formed on one facet and a high-reflection film S 2 having a reflectance of 90% or more is formed on the other facet. The semiconductor laser module has a structure in which the semiconductor laser device is set to a cooling device constituted by electrically alternately arranging 40 pairs or more of the Peltier elements and holding them by top and bottom ceramic plates and sealed in the package. A grating having a reflection bandwidth of 1.5 nm or less is formed on an optical fiber to be built in.

    摘要翻译: 在本发明的半导体激光装置中,在基板1上形成包括应变多量子阱结构的有源层的半导体层叠结构,空洞长度大于1000μm但为1800μm以下, 并且在一个面上形成反射率为3%以下的低反射膜S1,并且在另一个面上形成反射率为90%以上的高反射膜S 2。 半导体激光器模块具有这样的结构,其中半导体激光器件被设置为通过电气交替地布置40对或更多个珀耳帖元件并由顶部和底部陶瓷板保持并且密封在封装中的冷却装置。 在内置的光纤上形成具有1.5nm以下的反射带宽的光栅。

    Power supply device for sliding door
    70.
    发明公开
    Power supply device for sliding door 审中-公开
    StromversorgungsvorrichtungfürSchiebetür

    公开(公告)号:EP1602518A2

    公开(公告)日:2005-12-07

    申请号:EP05300368.7

    申请日:2005-05-11

    IPC分类号: B60J5/06 E05F15/14 H02G11/02

    摘要: A power supply device for a sliding door (12) comprising an extra-length absorbing unit (14), a door side fixing unit (16) fixed to a sliding door, a flexible tube (18) extending from said extra-length absorbing unit (14) to said door side fixing unit (16), and a wire harness (20) wired from a vehicle body (10) through said extra-length absorbing unit (14), said flexible tube (18) and said door side fixing unit (16) to the sliding door (12),
    wherein said extra-length absorbing unit (14) includes a case (30) having a gate (28) for said flexible tube, a rotating drum (32) for winding said flexible tube in the case, and a torsion spring (34) for providing a turning force with said rotating drum in a winding direction of said flexible tube.

    摘要翻译: 一种用于滑动门(12)的电源装置,包括超长吸收单元(14),固定到滑动门的门侧固定单元(16),从所述超长吸收单元延伸的柔性管(18) (14)到所述门侧固定单元(16),以及从车体(10)穿过所述超长吸收单元(14)布线的线束(20),所述柔性管(18)和所述门侧固定 单元(16)到所述滑动门(12),其中所述超长吸收单元(14)包括具有用于所述柔性管的门(28)的壳体(30),用于将所述柔性管 以及用于在所述柔性管的卷绕方向上与所述旋转滚筒一起提供转动力的扭转弹簧(34)。