公开(公告)号：EP1306751A4

公开(公告)日：2009-05-06

申请号：EP01936862

申请日：2001-06-06

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  MORIMOTO TATSUO ,  NAKADA AKIRA ,  SUGAWA SHIGETOSHI

IPC分类号： G06F9/38 ,  G06F9/445 ,  G06F11/00

CPC分类号： G06F9/44505 ,  G06F9/3897

摘要： Circuitry management information having circuitry information for altering the circuitry of an FPGA (12) is stored in a memory (13) and a circuitry management unit (11) reads out the circuitry management information from the memory (13) depending on information related to an instruction group supplied externally through a signal line group (14). Circuitry of the FPGA (12) is altered according to the circuitry management information thus read out and processing of the instruction group is executed to convert information processing by software into information processing by hardware in real time thus executing information processing at high rate while shortening the verification time of software and developing a software in a short period with high efficiency.

公开(公告)号：EP1622194A4

公开(公告)日：2009-04-08

申请号：EP04727121

申请日：2004-04-13

申请人： OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  TERAMOTO AKINOBU

IPC分类号： H01L21/283 ,  H01L21/316 ,  H01L21/04 ,  H01L21/318 ,  H01L21/336 ,  H01L29/78

CPC分类号： H01L21/049

摘要： A semiconductor device comprising a substrate of SiC provided with an insulating film through plasma treatment. Rare gas is incorporated in the insulating film. Preferably, at least one of krypton (Kr), argon (Ar) and xenon (Xe) is used as the rare gas. A combination of oxygen gas and krypton (Kr) is especially preferred.

摘要翻译： 一种半导体器件，包括通过等离子体处理提供有绝缘膜的SiC衬底。 稀有气体被纳入绝缘薄膜中。 优选地，使用氪（Kr），氩（Ar）和氙（Xe）中的至少一种作为稀有气体。 氧气和氪（Kr）的组合是特别优选的。

公开(公告)号：EP1607202A4

公开(公告)日：2007-08-01

申请号：EP04714928

申请日：2004-02-26

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  KITANO MASAFUMI ,  TANAHASHI NAOKI

IPC分类号： B29C33/38 ,  B29C33/56 ,  B29C45/17 ,  B29C45/20 ,  B29C45/37 ,  B29C45/46 ,  B29K23/00 ,  B29L11/00 ,  C23C8/10 ,  C23C8/14 ,  C23C8/18 ,  C23C30/00

CPC分类号： B29C33/56 ,  B29C33/38 ,  B29C45/37 ,  B29L2031/3475 ,  C23C8/10 ,  C23C8/14 ,  C23C8/18 ,  C23C30/00 ,  Y10S425/808

摘要： A member for a resin molding machine wherein it has a face contacting with a molten resin, and at least a part of said face is covered with a film of an oxide of a base material of the face or a component contained in the base material. The use of said member in the molding of a resin allows the prevention of the incorporation of a contaminant associated with the deterioration of a melt of the resin into a molded article from the resin.

公开(公告)号：EP1434253A4

公开(公告)日：2006-10-04

申请号：EP02800747

申请日：2002-10-02

申请人： OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  SHIGETOSHI SUGAWA

IPC分类号： H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L29/04 ,  H01L29/51 ,  H01L29/78 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L29/518 ,  H01L21/28202 ,  H01L29/045 ,  H01L29/78

摘要： A semiconductor device in which field-effect transistors are fabricated on the surface of silicon substantially having direction of crystal plane. The field-effect transistors are so arranged on the silicon surface that the direction from the source region of each field-effect transistor to the drain region thereof substantially agrees with the direction of crystal plane.

公开(公告)号：EP1553050A4

公开(公告)日：2006-08-30

申请号：EP03755286

申请日：2003-05-26

申请人： TAIYO NIPPON SANSO CORP ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  YAZAKI RYUICHI ,  KAWAI MASATO ,  KIMIJIMA TETSUYA ,  MATSUDA KUNIO

IPC分类号： B01D53/04 ,  B01D53/26 ,  B01D53/28 ,  B01D53/75 ,  B01D53/86 ,  B01D53/94 ,  B01J20/18 ,  C01B5/00 ,  C01B21/04 ,  C01B23/00

CPC分类号： C01B21/0466 ,  B01D53/04 ,  B01D53/26 ,  B01D53/75 ,  B01D53/86 ,  B01D2253/108 ,  B01D2257/80 ,  C01B5/00 ,  C01B21/0416 ,  C01B21/0422 ,  C01B23/0021 ,  C01B23/0026 ,  C01B2210/0035 ,  C01B2210/0037 ,  C01B2210/0053 ,  C01B2210/0075 ,  Y02C20/10

摘要： A method for gas purification wherein a mixed gas containing a rare gas and nitrogen as main components and hydrogen, a reaction product comprising nitrogen and hydrogen and steam as trace components is freed of the trace components, which comprises an adsorbing step of removing the reaction product comprising nitrogen and hydrogen and steam, a hydrogen oxidation step of converting hydrogen to steam by a catalytic hydrogen oxidizing reaction in the presence of oxygen, and then a drying step of removing the steam formed in the hydrogen oxidation step. When the mixed gas further contains a nitrogen oxide, a denitration step of converting the nitrogen oxide to nitrogen and steam in the presence of a reducing substance is carried out prior to the above adsorption step.

公开(公告)号：EP1376668A4

公开(公告)日：2006-02-15

申请号：EP02707230

申请日：2002-03-28

申请人： TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  HIRAYAMA M ,  SUGAWA S ,  GOTO T

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C16/511 ,  C23C16/517 ,  H01J37/32 ,  H01L21/205 ,  H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01J37/32192 ,  C23C16/517 ,  H01J37/32009 ,  H01J37/32339

摘要： A microwave plasma process device (10) is provided with a plasma ignition enhancing means for enhancing plasma ignition by microwaves. The plasma ignition enhancing means comprises a deuterium lamp (30) which generates vacuum ultraviolet rays, and a penetration window (32) guiding the vacuum ultraviolet rays, which have penetrated the same, to a plasma excitation space (26). The penetration window (32) is constructed as a convex lens, focusing the vacuum ultraviolet rays to enhance the ionization of the plasma excitation gas. Such arrangement makes it possible to effect plasma ignition easily and rapidly.

摘要翻译： 公开了一种微波等离子体处理装置，其能够在等离子体处理的压力下实现快速和容易的等离子体点火。 在微波等离子体处理装置中，提供等离子体点火促进单元以便于由微波引起的等离子体点火。 等离子体点火促进单元包括发射真空紫外线的氘灯和允许真空紫外线穿透和照射等离子体激发空间的透射窗口。 传输窗是凸透镜，聚焦真空紫外线以增强等离子体激发气体的离子化。 通过这样的结构，可以容易且快速地引起等离子体点火。

公开(公告)号：EP1593888A4

公开(公告)日：2006-02-01

申请号：EP04709363

申请日：2004-02-09

申请人： FUJIKIN KK ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  IKEDA NOBUKAZU ,  YAMAJI MICHIO ,  KITANO MASAFUMI ,  MORIMOTO AKIHIRO

IPC分类号： H01L21/205 ,  F16K7/14 ,  F16K27/00 ,  F16K51/02 ,  F16K7/12

CPC分类号： F16K7/14 ,  F16K27/003 ,  F16K51/02

摘要： A valve in accordance with the reduction in diameter of piping in a vacuum discharge system, the reduction realizing downsizing of apparatuses for a vacuum discharge system and resultant reduced costs and shortened time for vacuum discharge. In the valve, inside corrosion, clogging, seat leakage, etc. by accumulation of dissociated products produced by decomposition of gas can be prevented from occurring. Specifically, passive aluminum is used for piping components, such as the valve, adapted for a vacuum discharge system so as to control decomposition of gas caused by rise in temperature during baking, so that components suitable for the reduction in diameter sizes in the vacuum discharge system are provided. Corrosion, clogging, seat leakage, etc. caused by decomposition of gas are prevented from occurring.

公开(公告)号：EP1439571A4

公开(公告)日：2005-09-21

申请号：EP02775374

申请日：2002-10-18

申请人： GOTO NAOHISA ,  OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： GOTO NAOHISA ,  OHMI TADAHIRO ,  HIRAYAMA MASAKI ,  GOTO TETSUYA

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01J37/32229 ,  H01J37/32192

摘要： A microwave plasma processing device, comprising a processing container (12), a microwave generator (24), a wave guide tube (22) for guiding microwave from the microwave generator (24), and a microwave radiating member (19) for radiating the microwave having a wave length shortened by a wave-slowing plate (18) into a space inside the processing container, the wave guide tube (22) further comprising a single microwave output opening (22a) located at the position thereof corresponding to the center portion of the microwave radiating member (19).

公开(公告)号：EP1152646A4

公开(公告)日：2005-03-02

申请号：EP00977871

申请日：2000-11-22

申请人： TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI ,  KAIHARA RYUU

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/46

CPC分类号： H01J37/32623 ,  H01J37/32082 ,  H01J37/32587 ,  H01J37/3266 ,  H01J37/32697

摘要： A wafer (101) to be plasma-treated is placed on a first electrode (102). Means (103) applies a magnetic field to the wafer surface to be plasma-treated. In the periphery of the first electrode (102) is arranged an auxiliary electrode (104), on the back (105) of which a plasma is produced. Electrons in the plasma are drifted from the front (106) to back (105) of the auxiliary electrode (104) and vice versa.

公开(公告)号：EP1096351A4

公开(公告)日：2004-12-15

申请号：EP00913087

申请日：2000-04-03

申请人： FUJIKIN KK ,  TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  KAGATSUME SATOSHI ,  SUGIYAMA KAZUHIKO ,  MINAMI YUKIO ,  NISHINO KOUJI ,  DOHI RYOUSUKE ,  YONEHANA KATSUNORI ,  IKEDA NOBUKAZU ,  YAMAJI MICHIO ,  HIROSE JUN ,  FUKAZAWA KAZUO ,  KOIZUMI HIROSHI ,  NAGAOKA HIDEKI ,  MORIMOTO AKIHIRO ,  UNO TOMIO ,  IDETA EIJI ,  MATSUMOTO ATSUSHI ,  UENOYAMA TOYOMI ,  HIROSE TAKASHI

IPC分类号： G05D7/06

CPC分类号： G05D7/0658 ,  G05D7/0664 ,  Y10S438/935 ,  Y10T137/0396 ,  Y10T137/7759 ,  Y10T137/7761 ,  Y10T137/86389 ,  Y10T137/87877 ,  Y10T137/87917

摘要： A fluid feeding device having a plurality of flow paths disposed in parallel with each other starting at a regulator for pressure regulation, wherein a mass flow controller for flow control or a pressure system flow control device is disposed in each flow path so that the opening and closing operations for fluid supply in each flow path do not provide a transient variation in a stable supply to the other flow paths and, when the fluid supply in a flow path is changed from close to open, a set flow rate is reached a specified delay time after the start of the operation of the mass flow controller in that flow path.

摘要翻译： 用的流线从一个调节器，用于压力调整分支出来的多个流体供给装置中，流线平行地布置，worin的量度取，DASS模具手术，也就是，开口或一个流路的开闭将没有 在其它流动通道的稳流瞬态效应。 为了这个目的，每个流动通道设置有一个时间延迟型质量流量控制器MFC所以没有当一个封闭流体通道打开时，质量流量控制器上没有流动通道达在一个特定的延迟时间ΔT的一组流量Qs 从起点。 这样提供了一种方法和用于其中的气体类型的多元性可与精度高流速通过一个压力式流量控制装置来控制上述装置的速率。为了做到端，用于计算气体的流动的公式 理论上推导做了与压力比不低于临界压力比更高流动。 从做过公式，则流程因数被定义，所以做了式可以被应用到许多用流动因素气体类型。 该方法包括：在下游侧计算通过传递到孔口雅丁式QC = KP1（K =常数）具有压力P1的气体的QC流量上设置节流孔上游侧的两次或更多次高于压力P2 ，worin流量因数FF为每种气体的计算如下： FF =（K /伽马S）A2 /（卡帕+ 1）U <1 /（卡帕-1）>是κ/ A（卡帕 + 1）RUU <1.2> 和worin，如果气体类型A的计算的流速是QA，并且，当将B型气体被允许在相同的压力下，通过相同的孔中流动的上游侧 并在上游侧相同的温度，流率QB的计算公式如下： QB =（FFB / FFA）QA 其中YS =标准状态的气体的浓度; Kappa值=气体的比热的比值; R为气体的=常数; K =比例常数不依赖于气体的类型; FFA =气体类型A的流动系数; 气体类型B. 的和FFB =流量系数