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    Procédé de réalisation d'une structure comportant au moins une partie active multi-épaisseur
    73.
    发明公开
    Procédé de réalisation d'une structure comportant au moins une partie active multi-épaisseur 审中-公开
    制造具有至少一个活性部分由若干厚度的结构的方法

    公开(公告)号：EP2599746A1

    公开(公告)日：2013-06-05

    申请号：EP12194881.4

    申请日：2012-11-29

    Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

    Inventor： Robert, Philippe

    IPC: B81C1/00

    CPC classification number: H01L21/20 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C1/00626 ,  B81C2201/0115 ,  B81C2201/019 ,  G01P15/0802

    Abstract: Procédé de réalisation d'une structure comportant une partie active comportant au moins deux couches à partir d'un premier substrat silicium monocristallin, ledit procédé comportant les étapes :
    a) réalisation d'au moins une zone de silicium poreux dans le premier substrat,
    b) réalisation d'un dépôt par croissance épitaxiale d'une couche de silicium monocristallin sur toute la surface du premier substrat et sur la surface de la zone de silicium poreux,
    c) usinage de la couche de monocristalline obtenue par épitaxie au niveau de la zone en silicium poreux pur réaliser une première zone suspendue,
    d) retrait ou oxydation du silicium poreux,
    e) dépôt d'une couche sacrificielle sélective par rapport au silicium,
    f) usinage du premier substrat,
    g) libération des zones suspendues par retrait de la couche sacrificielle.

    Abstract translation: 该方法包括去除或氧化的不连续的半导体材料。 牺牲层被形成为可选择性蚀刻相对于前表面的半导体材料和外延生长的半导体层的材料以完全呼叫或部分地涂覆悬浮区。 一个基片（2）的背面被加工到清除从牺牲层的某些区以定义另一个悬浮区和以使得能够到达前区。 该区域由回抽牺牲层的一部分被释放。 衬底是由单晶硅制成的。

    SINGLE CRYSTAL DIAMOND MOVABLE STRUCTURE AND MANUFACTURING METHOD THEREOF
    76.
    发明公开
    SINGLE CRYSTAL DIAMOND MOVABLE STRUCTURE AND MANUFACTURING METHOD THEREOF 审中-公开
    单晶金刚石可动结构及其制造方法

    公开(公告)号：EP2540877A1

    公开(公告)日：2013-01-02

    申请号：EP11744760.7

    申请日：2011-02-18

    Applicant: National Institute for Materials Science

    Inventor： LIAO, Meiyong ,  KOIDE, Yasuo ,  HISHIDA, Shunichi

    IPC: C30B29/04 ,  B81B3/00 ,  B81C3/00 ,  B82B1/00 ,  C23C16/27 ,  G01Q70/16

    CPC classification number: C30B29/04 ,  B81C1/0015 ,  B81C2201/019 ,  C30B31/22

    Abstract: The utilization of single crystal diamond in a nano- or micro-machine (N/MEMS) device is difficult, and there has been no report on such utilization. The reason for this resides in that it is difficult to grow single crystal diamond on an oxide which is a sacrifice layer. In a conventional technique, a cantilever or the like is produced by forming polycrystalline diamond or nanodiamond on an oxide as a sacrifice layer, but the mechanical performance, vibration characteristics, stability, and reproducibility of the produced cantilever or the like are unsatisfactory. In the present invention, utilizing the fact that the high concentration ion-implanted region in a diamond substrate 101 is modified into graphite, the layer 104 modified into graphite as a sacrifice layer is removed by electrochemical etching to obtain the diamond layer remaining on the resultant substrate as a movable structure. The produced cantilever 106 exhibited high frequency resonance. The use of single crystal diamond makes it possible to improve the N/MEMS device in mechanical performance and stability as well as electric properties.

    Abstract translation: 在纳米或微机器（N / MEMS）器件中使用单晶金刚石是困难的，并且还没有关于这种利用的报道。 其原因在于，难以在作为牺牲层的氧化物上生长单晶金刚石。 在常规技术中，通过在氧化物上形成多晶金刚石或纳米金刚石作为牺牲层来制造悬臂梁等，但所制造的悬臂梁等的机械性能，振动特性，稳定性和再现性不令人满意。 在本发明中，利用金刚石基板101中的高浓度离子注入区被改性为石墨的事实，通过电化学蚀刻除去被改性为石墨作为牺牲层的层104，以获得残留在合成物上的金刚石层 衬底作为可移动结构。 所制造的悬臂106呈现高频共振。 使用单晶金刚石可以改善N / MEMS器件的机械性能和稳定性以及电性能。

    ASSEMBLY OF FLAT LAYER ON STRUCTURED GLASS LAYERS
    77.
    发明公开
    ASSEMBLY OF FLAT LAYER ON STRUCTURED GLASS LAYERS 审中-公开
    浅层基于结构的玻璃层的安排

    公开(公告)号：EP2528853A2

    公开(公告)日：2012-12-05

    申请号：EP11702124.6

    申请日：2011-01-28

    Applicant: Corning Incorporated

    Inventor： BISSON, Antoine ,  DANNOUX, Thierry, L ,  PARIS, Anne

    IPC: B81C1/00 ,  B81B1/00

    CPC classification number: B81C1/00119 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00824 ,  B01J2219/00831 ,  B01J2219/0086 ,  B01J2219/00873 ,  B81B2201/058 ,  B81C2201/019

    Abstract: A microfluidic device (100) made from glass, ceramic or vitroceramic, comprises an upper layer (122), a lower layer (124) and an intermediate layer (114), the intermediate layer (114) comprising an upper face (114b) and a lower face (114a), the lower face (114a) comprising a first open structured surface defining a first microfluidic channel (126) and the upper face (114b) comprising a second open structured surface defining a second microfluidic channel (112); the lower surface of the intermediate layer (114) cooperating with a first planar layer closing the first microchannel (126); the upper face (114b) of the intermediate layer (114) cooperating with a second planar layer (130), closing the second microfluidic channel (112) in a sealed manner, and the second planar layer constituting an intermediate layer (130) which cooperates, on its face opposite the intermediate layer (114), with another layer (122) comprising on its inner face (122a) a structured surface defining a third microfluidic channel (128).

    METHOD FOR PLUGGING A HOLE AND A PLUGGED HOLE
    78.
    发明公开
    METHOD FOR PLUGGING A HOLE AND A PLUGGED HOLE 有权
    VERFAHREN ZUM STOPFEN EINES LOCHES UND GESTOPFTES LOCH

    公开(公告)号：EP2512977A2

    公开(公告)日：2012-10-24

    申请号：EP10798074.0

    申请日：2010-12-17

    Applicant: AEROCRINE AB

    Inventor： FISCHER, Andreas ,  STEMME, Göran ,  NIKLAUS, Frank ,  ROXHED, Niklas

    IPC: B81C3/00

    CPC classification number: B81C1/00293 ,  B01L3/502707 ,  B01L2300/042 ,  B81B2201/058 ,  B81B2203/0315 ,  B81C2201/019 ,  B81C2203/0145 ,  Y10T29/49117 ,  Y10T29/49151 ,  Y10T29/49153 ,  Y10T29/49826 ,  Y10T29/49885

    Abstract: A method for at least partially inserting a plug into a hole, said method comprising the steps of a) providing a at least one substrate with at least one hole wherein said at least one hole has a largest dimension of from 1 μm to 300 μm, b) providing a piece of material, wherein said piece of material has a larger dimension than said at least one hole, c) pressing said piece of material against the hole with a tool so that a plug is formed, wherein at least a part of said piece of material is pressed into said hole, d) removing the tool from the piece of material. There is further disclosed a plugged hole manufactured with the method. One advantage of an embodiment is that an industrially available wire bonding technology can be used to seal various cavities. The existing wire bonding technology makes the plugging fast and cheap.

    Abstract translation: 一种用于至少部分地将插头插入孔中的方法，所述方法包括以下步骤：a）提供具有至少一个孔的至少一个基底，其中所述至少一个孔具有1μm至300μm的最大尺寸， b）提供一块材料，其中所述材料片具有比所述至少一个孔更大的尺寸，c）用工具将所述材料件压靠在孔上，从而形成插塞，其中至少部分 所述材料被压入所述孔中，d）从所述材料上移除所述工具。 还公开了一种利用该方法制造的堵塞孔。 一个实施例的一个优点是可以使用工业上可用的引线接合技术来密封各种空腔。 现有的导线接合技术使堵塞快速便宜。

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