公开(公告)号：EP1965416A3

公开(公告)日：2009-04-29

申请号：EP08009577.1

申请日：2006-11-28

申请人： Freiberger Compound Materials GmbH

发明人： Habel, Frank ,  Scholz, Ferdinand ,  Neubert, Barbara ,  Brückner, Peter ,  Wunderer, Thomas

IPC分类号： H01L21/20

CPC分类号： H01L21/0265 ,  C30B25/04 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： A free-standing III-N wafer, wherein III denotes at least one element of the group III of the periodic Table of Elements, selected from Al, Ga and In, is obtained by a process comprising providing a III-N layer having a surface, which comprises more than one facet, and selectively depositing a mask material only on one or multiple, but not on all facets during a III-N layer growth process. Thereby, it is possible to produce free-standing thick III-N layers. Further, semiconductor devices or components having special structures and layers can be produced.

公开(公告)号：EP1801855B1

公开(公告)日：2009-01-14

申请号：EP06024627.9

申请日：2006-11-28

申请人： Freiberger Compound Materials GmbH

发明人： Habel, Frank ,  Scholz, Ferdinand ,  Neubert, Barbara ,  Brückner, Peter ,  Wunderer, Thomas

IPC分类号： H01L21/20

CPC分类号： H01L21/0265 ,  C30B25/04 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

公开(公告)号：EP1991499A1

公开(公告)日：2008-11-19

申请号：EP07716104.0

申请日：2007-03-07

申请人： QuNano AB ,  Mandl, Bernhard

发明人： SAMUELSON, Lars ,  MÅRTENSSON, Thomas ,  SEIFERT, Werner ,  MIKKELSEN, Anders ,  MANDL, Bernhard

IPC分类号： B82B3/00 ,  C30B25/10 ,  H01L29/06

CPC分类号： C30B25/04 ,  B01J21/08 ,  B82Y30/00 ,  C30B29/62 ,  H01L21/02381 ,  H01L21/02392 ,  H01L21/02433 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02603 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/201

摘要： The present invention relates to epitaxial growth of nanowires on a substrate. In particular the invention relates to growth of nanowires on an Si-substrate without using Au as a catalyst. In the method according to the invention an oxide template is provided on a passivated surface of the substrate. The oxide template defines a plurality of nucleation onset positions for subsequent nanowire growth. According to one embodiment a thin organic film is used to form the oxide template.

公开(公告)号：EP1965416A2

公开(公告)日：2008-09-03

申请号：EP08009577.1

申请日：2006-11-28

申请人： Freiberger Compound Materials GmbH

发明人： Habel, Frank ,  Scholz, Ferdinand ,  Neubert, Barbara ,  Brückner, Peter ,  Wunderer, Thomas

IPC分类号： H01L21/20

CPC分类号： H01L21/0265 ,  C30B25/04 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： A free-standing III-N wafer, wherein III denotes at least one element of the group III of the periodic Table of Elements, selected from Al, Ga and In, is obtained by a process comprising providing a III-N layer having a surface, which comprises more than one facet, and selectively depositing a mask material only on one or multiple, but not on all facets during a III-N layer growth process. Thereby, it is possible to produce free-standing thick III-N layers. Further, semiconductor devices or components having special structures and layers can be produced.

摘要翻译： 甲自由站立的III-N晶片，worin III表示元素的周期表，选自Al，Ga和In中选择的III族的至少一种元素，通过包括提供具有表面的III-N层的方法获得 方法，其包括多于一个刻面，且仅在上期间III-N层生长过程的所有方面的一个或多个，但不是选择性地沉积掩模材料。 由此，可以产生自由站立厚III-N层。 此外，可以制造半导体装置或具有特殊结构和层组分。

公开(公告)号：EP1820887A2

公开(公告)日：2007-08-22

申请号：EP06023148.7

申请日：2006-11-07

申请人： Sumitomo Electric Industries, Ltd.

发明人： Sato, Fumitaka ,  Nakahata, Seiji

IPC分类号： C30B29/40 ,  C30B25/04

CPC分类号： C30B29/40 ,  C30B25/04

摘要： A low-distortion gallium nitride crystal substrate including low dislocation single crystal regions (Z) having a definite c-axis and a definite a-axis, C-plane growth regions (Y) having a c-axis and a-axis parallel to the c-axis and a-axis of the low dislocation single crystal regions (Z), voluminous defect accumulating regions (H) having a c-axis inverse to the c-axis of the low dislocation single crystal regions (Z) and an a-axis parallel with the a-axis of the low dislocation single crystal regions (Z), and 0.1/cm 2 to 10/cm 2 c-axis gross core regions (F) containing at least one crystal having a c-axis parallel to the c-axis of the low dislocation single crystal regions (Z) and an a-axis different from the a-axis of the low dislocation single crystal regions (Z).

摘要翻译： 一种低失真的氮化镓晶体基板，包括具有一定c轴和一定a轴的低位错单晶区域（Z），C平面生长区域（Y）具有平行于 低位错单晶区域（Z）的c轴和a轴，具有与低位错单晶区域（Z）的c轴相反的c轴的大量缺陷累积区域（H） （Z）的平行轴线，以及含有至少一个c轴的晶体的0.1 / cm 2至10 / cm 2 c轴总芯部区域（F），其平行于所述低位错单晶区域 低位错单晶区域（Z）的c轴和与低位错单晶区域（Z）的a轴不同的a轴。

公开(公告)号：EP1817445A1

公开(公告)日：2007-08-15

申请号：EP05857330.4

申请日：2005-11-25

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： TAUZIN, Aurélie ,  LAGAHE-BLANCHARD, Chrystelle

IPC分类号： C30B33/02 ,  C30B31/22 ,  H01L21/762

CPC分类号： C30B33/02 ,  C30B25/04 ,  C30B33/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02625 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02664

摘要： The invention concerns a method for producing a growth mask on the surface of an initial crystalline substrate (1) including the following steps: forming a second material layer (2) on one of the sides of the first material initial substrate (1); forming a pattern in the thickness of the second material layer (2) so as to expose zones of said side of the initial substrate, said zones forming growth windows on the initial substrate. Said method is characterized in that the formation of the pattern is obtained by ionic implantation provided in the surface layer of the initial substrate underlying the second material layer, the conditions of implantation being such that they bring about, directly or following heat treatment, on said side of the initial substrate, the occurrence of exfoliated zones (5) of first material causing the localized removal of second material zones covering the exfoliated zones of first material, thereby locally exposing the initial substrate and forming growth windows (6) on the initial substrate. The invention also concerns methods for producing a thin crystalline layer and transferring said thin layer on a receiving substrate.

公开(公告)号：EP1059661A3

公开(公告)日：2003-10-01

申请号：EP00111392.7

申请日：2000-05-26

申请人： LumiLeds Lighting U.S., LLC

发明人： Chen, Yong ,  Wang, Shih-Yuan

IPC分类号： H01L21/20 ,  C30B25/18

CPC分类号： H01L21/02455 ,  C30B25/04 ,  H01L21/0242 ,  H01L21/02505 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647

摘要： An method wherein a group III nitride semiconductor is grown laterally from a surface (56a,56b) formed in a first epitaxial layer (52) having a different lattice parameter allows for the formation of epitaxial layer (55) that includes a region (60) that is substantially free of cracks (17). Growing the second epitaxial layer (55) from a side wall (56a,56b) of a trench (57) formed in a first epitaxial layer (52) rotates the growth direction of the second epitaxial layer (55) through approximately 90° with respect to the major surface (63) of the first epitaxial layer (52). In this manner, cracks (17) that occur in the second epitaxial layer (55) tend to occur in the direction perpendicular to the side wall (56a,56b) from which the second epitaxial growth initiates, which direction is also parallel to the major surface (63) of the first epitaxial material (52). This results in a substantially crack-free epitaxial material (60) growing out of the trench (57). The substantially crack-free epitaxial layer (60) may by used to grow successive epitaxial layers.

摘要翻译： 其中III族氮化物半导体从形成在具有不同晶格参数的第一外延层（52）中的表面（56a，56b）横向生长的方法允许形成包括区域（60）的外延层（55） 基本上没有裂纹（17）。 从形成在第一外延层（52）中的沟槽（57）的侧壁（56a，56b）生长第二外延层（55）使第二外延层（55）的生长方向相对于 到第一外延层（52）的主表面（63）。 以这种方式，在第二外延层（55）中发生的裂纹（17）倾向于在垂直于第二外延生长开始的侧壁（56a，56b）的方向上发生，该方向也平行于主体 第一外延材料（52）的表面（63）。 这导致从沟槽（57）中生长的基本上无裂纹的外延材料（60）。 基本上无裂纹的外延层（60）可用于生长连续的外延层。

公开(公告)号：EP0600276B1

公开(公告)日：1998-08-05

申请号：EP93118225.7

申请日：1993-11-10

申请人： SIEMENS AKTIENGESELLSCHAFT

发明人： Meister, Thomas, F., Dr. ,  Stengl, Reinhard, Dr., IBM East Fishkill Facility

IPC分类号： C30B25/04 ,  C30B23/04 ,  H01L21/20 ,  H01L21/331 ,  H01L21/336 ,  H01L21/302

CPC分类号： H01L29/66287 ,  C30B25/04 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L29/66651

公开(公告)号：EP0506146A3

公开(公告)日：1995-02-01

申请号：EP92109637.6

申请日：1981-04-06

申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY

发明人： Bozler, Carl O. ,  Fan, John C. C. ,  McClelland, Robert W.

IPC分类号： H01L21/36 ,  C30B25/18 ,  C30B33/00

CPC分类号： H01L31/0687 ,  C30B25/04 ,  C30B29/60 ,  C30B33/00 ,  H01L21/02002 ,  H01L21/02381 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/2007 ,  H01L31/043 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/184 ,  H01L2221/68318 ,  H01L2924/0002 ,  H01S5/0207 ,  H01S5/0217 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S117/902 ,  Y10S117/904 ,  Y10S117/905 ,  Y10S117/915 ,  Y10S148/026 ,  Y10S148/048 ,  Y10S148/054 ,  Y10S148/09 ,  Y10S148/135 ,  Y10S438/977 ,  H01L2924/00

摘要： A method of forming a thin film of single crystal semiconductor material in which an integrated circuit is formed, including the steps of forming a separation layer on a substrate, forming a thin film single crystal semiconductor material over the separation layer and substrate, and transferring the thin film single crystal semiconductor material from the substrate to an optically transmissive substrate, the method including the step of forming an integrated circuit in the thin film of single crystal material.

摘要翻译： 一种形成其中形成集成电路的单晶半导体材料的薄膜的方法，包括以下步骤：在衬底上形成分离层，在分离层和衬底上形成薄膜单晶半导体材料， 薄膜单晶半导体材料从基板传输到透光基板，该方法包括在单晶材料薄膜中形成集成电路的步骤。

公开(公告)号：EP0193830A2

公开(公告)日：1986-09-10

申请号：EP86102377.8

申请日：1981-04-06

申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY

发明人： Bozler, Carl O. ,  Weymouth Massachusetts 02188 ,  Fan, John C.C.

IPC分类号： H01L31/06 ,  H01L25/08

CPC分类号： H01L31/0687 ,  C30B25/04 ,  C30B29/60 ,  C30B33/00 ,  H01L21/02002 ,  H01L21/02381 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/2007 ,  H01L31/043 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/184 ,  H01L2221/68318 ,  H01L2924/0002 ,  H01S5/0207 ,  H01S5/0217 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S117/902 ,  Y10S117/904 ,  Y10S117/905 ,  Y10S117/915 ,  Y10S148/026 ,  Y10S148/048 ,  Y10S148/054 ,  Y10S148/09 ,  Y10S148/135 ,  Y10S438/977 ,  H01L2924/00

摘要： A solar cell device comprises a first solar cell (70) to which two other separately-fabricated solar cells (72, 73) are bonded by a transparent bonding agent, the other cells (72, 73) being of thin film form. The bonding agent can be an electrical insulator and the cells (70, 72, 73) can be wired independently so as to be current and voltage decoupled. Alternatively, the bonding agent is tin-doped indium oxide so that the cells are connected in series. At least the thin solar cells (72,73) are formed by an epitaxial lateral overgrowth technique.

摘要翻译： 太阳能电池器件包括第一太阳能电池（70），其中两个其它分开制造的太阳能电池（72,73）通过透明粘合剂结合到其上，其它电池（72,73）为薄膜形式。 接合剂可以是电绝缘体，并且电池（70,72,73）可以独立地布线，以便电流和电压去耦合。 或者，粘合剂是锡掺杂的氧化铟，使得电池串联连接。 至少薄的太阳能电池（72,73）通过外延横向过度生长技术形成。