公开(公告)号：EP1008674A1

公开(公告)日：2000-06-14

申请号：EP98912715.4

申请日：1998-04-08

申请人： Tokyo Electron Limited

发明人： OKAYAMA, Nobuyuki ,  SAEGUSA, Hidehito ,  OZAWA, Jun ,  HAYASHI, Daisuke ,  TAKAYAMA, Naoki ,  KAZAMA, Koichi

IPC分类号： C23F4/00 ,  C23C14/34 ,  C23C16/44 ,  H01L21/203 ,  H01L21/205 ,  H01L21/3065

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32477 ,  Y10T29/49002 ,  Y10T29/49117 ,  Y10T29/532 ,  Y10T29/53204

摘要： A processing system is provided with insulating members capable of easily fitted in, removed from and positioned in gas discharge holes, respectively.
An etching system (100) is provided with an upper electrode (128) provided with gas discharge holes (128a) of a shape corresponding to the external shape of insulating members (144). The insulating members (144) are formed of a poly(ether ether ketone) resin, a polyimide resin, a poly(ether imide) resin or the like. Each insulating member 144 is provided in its outer surface with a step (144a). The length of the insulating members (144) is shorter than that of the gas discharge holes (128a). Each insulating member (144) is provided with a longitudinal through hole (144d), and an end part of the through hole (144d) on the side of a processing chamber (102) is tapered so as to expand toward the processing chamber (102). The insulating members (144) are pressed in the gas discharge holes (128a) from the side of the outlet ends of the gas discharge holes (128a) so as to bring the steps (144a) into contact with shoulders (128b) formed in the sidewalls of the gas discharge holes (128a). A part of each insulating member (144) as fitted in the gas discharge hole (128a) project from a surface of the upper electrode (128) facing a susceptor (110).

摘要翻译： 处理系统设置有能够分别容易地装配在气体排放孔中并定位在排气孔中的绝缘构件。 蚀刻系统（100）设置有设置有与绝缘构件（144）的外部形状对应的形状的气体排出孔（128a）的上部电极（128）。 绝缘构件（144）由聚（醚醚酮）树脂，聚酰亚胺树脂，聚（醚酰亚胺）树脂等形成。 每个绝缘构件144在其外表面上设置有台阶（144a）。 绝缘构件（144）的长度比气体排出孔（128a）的长度短。 每个绝缘构件（144）设置有纵向通孔（144d），并且在处理室（102）侧的通孔（144d）的端部是锥形的，以朝向处理室（102） ）。 绝缘构件（144）从气体排出孔（128a）的出口端的一侧被压在排气孔（128a）中，以使步骤（144a）与形成在气体排出孔（128a）中的肩部（128b）接触 气体排出孔（128a）的侧壁。 安装在气体排出孔（128a）中的每个绝缘构件（144）的一部分从面向基座（110）的上部电极（128）的表面突出。

公开(公告)号：EP0983791A4

公开(公告)日：2000-05-03

申请号：EP98955950

申请日：1998-11-27

申请人： NIPPON OXYGEN CO LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  ISHIHARA YOSHIO

IPC分类号： B01D53/46 ,  B01D53/00 ,  B01J3/00 ,  C01B23/00 ,  C23C16/44 ,  B01J3/02 ,  C23C16/50 ,  C23F4/00 ,  H01L21/203 ,  H01L21/205

CPC分类号： C01B23/001 ,  B01D53/00 ,  B01D2256/18 ,  B01D2258/0216 ,  B01J3/00 ,  C23C16/4412

摘要： A process and an apparatus for recovering a noble gas, which can recover a noble gas exhausted from a noble gas employing system efficiently and also can supply the noble gas of a predetermined purity to the noble gas employing system and which can reduce consumption of the noble gas. In the process and apparatus for recovering a noble gas, when a noble gas contained in an exhaust gas exhausted from a noble gas employing system operated under reduced pressure is recovered, switching between introduction of the exhaust gas to a recovery system and exhaustion of the exhaust gas to an exhaust system is carried out under reduced pressure, and this switching operation is carried out depending on the content of impurity components contained in the exhaust gas or on the running state of the noble gas employing system.

摘要翻译： 本发明提供一种稀有气体的回收方法和回收装置，能够使用稀有气体高效率地回收从设备排出的稀有气体，将规定纯度的稀有气体稳定地供给到同一设备，并减少稀有气体的消耗量，其中， 当从在真空下操作的稀有气体使用设备排出的废气中的稀有气体被回收时，将废气引入回收系统切换到/从相同气体排放到排气系统 根据废气中含有的杂质成分的浓度和稀有气体使用设备的运行条件进行该开关操作。

公开(公告)号：EP0989202A1

公开(公告)日：2000-03-29

申请号：EP98904390.6

申请日：1998-02-19

申请人： Shibaura Mechatronics Corporation

发明人： KURIYAMA, Noboru ,  YATSU, Yutaka ,  UTSUNOMIYA, Nobuaki ,  YASUMOTO, Yuji

IPC分类号： C23C14/34 ,  C23C14/54 ,  H01L21/203 ,  H01L21/285

CPC分类号： H01J37/3444 ,  H01J37/34

摘要： The present invention provides a sputtering power supply apparatus which realizes stable sputtering at a pressure lower than the discharge start pressure, so that scattering of sputtering particles due to collision with sputtering inert gas can be reduced, thereby improving the step coverage and the denseness of the sputter film. According to the present invention, there is provided a sputtering power supply apparatus comprising a sputtering DC power source (A), a constant current circuit (B) connected to the DC power source, a sputtering source (21) connected to the constant current circuit (B), and a control unit (11) for controlling a current output from the constant current circuit (B) so as to be a constant current.

摘要翻译： 本发明提供了一种溅射电源装置，其在比放电开始压力低的压力下实现稳定的溅射，从而可以减少与溅射惰性气体的碰撞引起的溅射颗粒的散射，从而提高步骤覆盖度和 溅射膜。 根据本发明，提供了一种溅射电源装置，包括溅射直流电源（A），连接到直流电源的恒流电路（B），连接到恒流电路的溅射源 （B），以及控制单元（11），用于控制从恒流电路（B）输出的电流，使其成为恒定电流。

公开(公告)号：EP0983791A1

公开(公告)日：2000-03-08

申请号：EP98955950.5

申请日：1998-11-27

申请人： Nippon Sanso Corporation ,  OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  ISHIHARA, Yoshio, Nippon Sanso Corp.

IPC分类号： B01J3/02 ,  C01B23/00 ,  H01L21/285 ,  H01L21/205 ,  H01L21/203 ,  C23C16/50 ,  C23F4/00

CPC分类号： C01B23/001 ,  B01D53/00 ,  B01D2256/18 ,  B01D2258/0216 ,  B01J3/00 ,  C23C16/4412 ,  Y02C20/30

摘要： A process and an apparatus for recovering a noble gas, which can recover a noble gas exhausted from a noble gas employing system efficiently and also can supply the noble gas of a predetermined purity to the noble gas employing system and which can reduce consumption of the noble gas. In the process and apparatus for recovering a noble gas, when a noble gas contained in an exhaust gas exhausted from a noble gas employing system operated under reduced pressure is recovered, switching between introduction of the exhaust gas to a recovery system and exhaustion of the exhaust gas to an exhaust system is carried out under reduced pressure, and this switching operation is carried out depending on the content of impurity components contained in the exhaust gas or on the running state of the noble gas employing system.

公开(公告)号：EP0849775A3

公开(公告)日：1999-04-28

申请号：EP97122152.8

申请日：1997-12-16

申请人： Toshiba Ceramics Co., Ltd.

发明人： Ohashi, Tadashi ,  Chaki, Katuhiro ,  Xin, Ping ,  Fujii, Tatsuo ,  Iwata, Katsuyuki ,  Mitani, Shinichi ,  Honda, Takaaki

IPC分类号： H01L21/203 ,  C30B23/02 ,  C30B25/02 ,  C23C14/24 ,  C23C14/56

CPC分类号： C23C16/45508 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/54 ,  C30B25/14 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262

摘要： A vapor deposition apparatus for supplying raw-material gas into a reactor to form a thin film on a wafer substrate disposed in the reactor by vapor deposition, including at least a rotator for mounting the wafer substrate thereon, a treatment gas introducing port, a straightening vane having plural holes, and a wafer substrate feed-in/out port, wherein the lowermost portion of the wafer feed-in/out port is located at a predetermined height from the upper surface of the rotator, and the difference in height between the lowermost portion of the wafer feed-in/out port and the upper surface of the rotator is set to be larger than the thickness of a transition layer of the upper portion of the rotator. In a vapor deposition method, a wafer substrate is mounted on the rotator to form a thin film having little defect and uniform film thickness on the wafer substrate by using the vapor deposition apparatus.

公开(公告)号：EP0768707A3

公开(公告)日：1999-01-27

申请号：EP96101335.6

申请日：1996-01-31

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Celii, Francis G. ,  Kao, Yung-Chung ,  Katz, Alan J. ,  Moise, Theodore S.

IPC分类号： H01L21/203 ,  C30B23/02 ,  C30B29/40 ,  H01L29/88

CPC分类号： H01L29/882 ,  B82Y10/00 ,  B82Y15/00 ,  C30B23/002 ,  C30B29/40 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02631 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of mass spectrometer (204) signals based on a process model. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.

公开(公告)号：EP0677878A3

公开(公告)日：1998-01-21

申请号：EP95101502.3

申请日：1995-02-03

申请人： TRW INC.

发明人： Tran, Liem Thanh ,  Streit, Dwight Christopher ,  Oki, Aaron Kenji

IPC分类号： H01L29/737 ,  H01L21/203 ,  H01L21/331

CPC分类号： H01L29/66318 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L29/7371

摘要： This invention discloses a heterojunction bipolar transistor (HBT) which includes a relatively thin intrinsic collector region and a relatively thick extrinsic collector region such that collector-base capacitance is reduced and electron transit time is maintained. The fabrication of the HBT includes loading a semi-insulating substrate into an molecular beam epitaxy machine, and growing a sub-collector contact layer, a bottom collector layer and a top collector layer on the substrate. Next, the substrate is removed from the molecular beam epitaxy machine and the top collector layer is etched by a photolithographic process to produce separate intrinsic and extrinsic collector regions. Then, the substrate is again loaded into the molecular beam epitaxy machine so that the base and emitter layers can be grown. And finally, the emitter layer is etched to form an emitter mesa only over the intrinsic semiconductor region.

公开(公告)号：EP0607935A3

公开(公告)日：1997-09-24

申请号：EP94100699.1

申请日：1994-01-19

申请人： Hughes Aircraft Company

发明人： Metzger, Robert A. ,  Hafizi, Madjid ,  Stanchina, William E. ,  McCray, Loren G., Jr.

IPC分类号： H01L21/331 ,  H01L29/73 ,  H01L21/203

CPC分类号： H01L29/7371 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/02631 ,  H01L29/66318

摘要： Diffusion of p-type Be dopant out of the base (40) of an npn heterojunction bipolar transistor (HBT) during the transistor fabrication is prevented by growing the base (40) at a low temperature, generally within the range of about 280°-420°C for a AlInAs/GaInAs device. The DC current gain is maximized by growing the base (40) at the highest permissible temperature before outdiffusion occurs, which is substantially above the Be precipitation temperature.

公开(公告)号：EP0459836B1

公开(公告)日：1997-09-17

申请号：EP91305013.4

申请日：1991-06-03

申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Zhang, Hongyong

IPC分类号： H01L21/84 ,  H01L21/268 ,  H01L21/203

CPC分类号： H01L21/02667 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02675 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757

摘要： A process for fabricating thin film transistors (TFTs) which comprises a two-step laser annealing process in which crystallization of the channel portion of a TFT is effected by irradiating the channel portion with an irradiation beam, for example from an excimer laser, and modification of the electric properties of the source and the drain regions of the TFT is effected by irradiating the source and the drain regions with an irradiation beam in a step independent of the step of crystallizing the channel portion. The process is carried out at low temperature and enables TFTs to be produced effectively and economically without risk of contamination by substrate impurities and with good expectation of a long operational lifetime.

公开(公告)号：EP0774775A1

公开(公告)日：1997-05-21

申请号：EP96111289.3

申请日：1996-07-12

申请人： MITSUBISHI DENKI KABUSHIKI KAISHA

发明人： Hayafuji, Norio, c/o Mitsubishi Denki K.K. ,  Yamamoto, Yoshitsugu, c/o Mitsubishi Denki K.K. ,  Kizuki, Hirotaka, c/o Mitsubishi Denki K.K.

IPC分类号： H01L21/203 ,  H01L21/335 ,  H01L21/74 ,  H01L21/324

CPC分类号： H01L29/66462 ,  H01L21/314 ,  H01L21/3245 ,  H01L23/3185 ,  H01L29/365 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of fabricating a semiconductor device comprises forming a first mixed crystal semiconductor layer (106) comprising AlAs and InAs; applying a solution containing a material that is easily combined with fluorine to the surface of the first mixed crystal semiconductor layer (106) exposed to the atmosphere so that the material contained in the solution combines with fluorine that sticks to the surface of the first mixed crystal semiconductor layer (106); and annealing the first mixed crystal semiconductor layer (106) in a vacuum at a high temperature. In this method, since the fluorine on the surface of the first mixed crystal semiconductor layer (106) exposed to the atmosphere is combined with the material included in the solution and removed together with the material, a first mixed crystal semiconductor layer (106) having no fluorine is produced. Therefore, unwanted infiltration of fluorine into the first mixed crystal semiconductor layer (106) is avoided, resulting in a highly reliable semiconductor device with desired characteristics.

摘要翻译： 一种制造半导体器件的方法包括形成包含的AlAs和的InAs的第一混晶半导体层（106）; 将含有材料的溶液并容易与氟暴露于大气中的第一混晶半导体层（106）的表面结合，从而确实包含在溶液中的材料结合了氟那样粘到第一混合晶体的表面 半导体层（106）; 并在高温下在真空中的第一混晶半导体层（106）退火。 在这种方法中，由于暴露在大气中的第一混晶半导体层（106）的表面上的氟结合包含在溶液中的材料，并与材料一起被除去，第一混晶半导体具有层（106） 不含氟被产生。 因此，氟的不希望的渗透进入第一混晶半导体层（106）被避免，在具有所需特性的高度可靠的半导体器件得到的。