公开(公告)号：EP0867933A3

公开(公告)日：2000-03-15

申请号：EP98301298.0

申请日：1998-02-23

申请人： APPLIED MATERIALS, INC.

发明人： Kholodenko, Arnold ,  Veytser, Alexander M. ,  Shamouilian, Shamouil

IPC分类号： H01L21/68

CPC分类号： C23C16/45521 ,  C23C16/4586 ,  H01L21/6831 ,  H01L21/6833 ,  H02N13/00 ,  Y10T279/23

摘要： An electrostatic chuck (20) for holding a substrate in a process chamber (80), having a voltage supply terminal (65) for charging the chuck. The chuck includes an electrostatic member (25) comprising at least one electrode (30) covered by an electrically insulated holding surface (40) for holding a substrate thereon, and an electrical contact surface (48) for providing charge to the electrode. A unidirectionally conducting coupler (70) electrically couples the contact surface (48) of the electrostatic member to the voltage supply terminal (65) to conduct charge substantially only in a single direction from the terminal to the contact surface. Preferably, an electrical connector (50) having a junction surface (55) is bonded to the electrical contact surface (48), and a terminal surface (60) for electrically contacting the voltage supply terminal, electrically couples the unidirectionally conducting coupler (70) to the voltage supply terminal (65).

公开(公告)号：EP0843023A2

公开(公告)日：1998-05-20

申请号：EP97117254.9

申请日：1994-03-31

申请人： APPLIED MATERIALS, INC.

发明人： Lei, Lawrence Chung-Lai

IPC分类号： C23C16/00 ,  C23C16/44 ,  C23C16/46 ,  H01L21/00

CPC分类号： C23C16/45519 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/458 ,  C23C16/4583 ,  C23C16/4585 ,  C23C16/46 ,  H01L21/67103 ,  H01L21/68 ,  H01L21/68721 ,  H01L21/68728 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68785 ,  H01L21/68792 ,  Y10S438/935

摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate (14). The chamber susceptor mount (210) for the substrate (14) is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount (210) for a substrate (14). A purge gas line (222) is connected to openings in the susceptor outside of the periphery of the substrate (14) to prevent edge and backside contamination of the substrate (14). A vacuum feed line mounts the substrate to the susceptor (210) during processing. A refractory purge guide (226), or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer (14) and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.

摘要翻译： 公开了在衬底（14）上提供更均匀沉积的薄膜的真空CVD室。 利用单个线圈在所有侧面上牢固地接触基座的金属来电阻加热用于基板（14）的腔室基座支架（210），从而为基板（14）提供跨基座支架（210）的均匀温度。 净化气体管线（222）连接到衬底（14）周边外部的衬托器中的开口，以防止衬底（14）的边缘和背面污染。 在处理期间，真空馈送线将衬底安装到基座（210）。 耐火净化引导件（226）或多个定位销保持用于净化气体沿着晶片（14）的边缘并且进入腔室的处理区域的固定间隙通道。 排气泵板改善了从腔室中排出的废气的均匀性。

公开(公告)号：EP0448346B1

公开(公告)日：1997-07-09

申请号：EP91302357.8

申请日：1991-03-19

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Sato, Yuusuke, c/o Intellectual Property Division ,  Ohmine, Toshimitsu, c/o Intellectual Property Div.

IPC分类号： C23C16/44 ,  C23C16/46

CPC分类号： C23C16/45521 ,  C23C16/4582 ,  C23C16/481 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68785

公开(公告)号：EP0709486A1

公开(公告)日：1996-05-01

申请号：EP95307323.6

申请日：1995-10-16

申请人： APPLIED MATERIALS, INC.

发明人： Dubois, Dale R. ,  Morrison, Alan F. ,  Marsh, Richard A. ,  Chang, Mei

IPC分类号： C23C16/44 ,  H01L21/00

CPC分类号： C23C16/45521 ,  C23C16/04 ,  C23C16/042 ,  C23C16/4585 ,  H01L21/68735

摘要： Apparatus for CVD processing wherein a wafer (28) mounted in a chamber (24) of a reactor (20) on a vertically movable susceptor (26) beneath a showerhead (30). The susceptor extends beyond the outer perimeter of the wafer such that, when the susceptor is raised into contact with a shield ring (40) which normally rests on a ring support (42) in the chamber, the shield ring engages outer portion of the susceptor beyond the perimeter of the wafer, lifting the shield ring off its support. The shield ring (40) shields the edge of the top surface of the susceptor during the deposition, whereby unwanted deposition on the susceptor is prevented while, at the same time, allowing for deposition over the entire upper surface of the wafer. To center the shield ring and the susceptor with respect to each other, the shield ring may include a plurality of centering protrusions (60), at least some of which engage the susceptor as it moves upwards to lift the shield ring off its supports in the chamber.

摘要翻译： 用于CVD处理的装置，其中将安装在反应器（20）的腔室（24）中的晶片（28）安装在喷头（30）下方的垂直移动的基座（26）上。 感受体延伸超过晶片的外周边，使得当基座升高成与通常搁置在腔室中的环形支撑件（42）上的屏蔽环（40）接触时，屏蔽环接合基座的外部部分 超出晶圆的周长，将屏蔽环从其支撑件上取下。 屏蔽环（40）在沉积期间屏蔽基座的顶表面的边缘，由此防止在基座上的不必要的沉积，同时允许沉积在晶片的整个上表面上。 为了将屏蔽环和基座相对于彼此定位，屏蔽环可以包括多个定心突起（60），当其向上移动以将屏蔽环从其支撑件提升时，至少一些定心突起（60）与基座接合， 室。

公开(公告)号：EP0467623B1

公开(公告)日：1996-03-13

申请号：EP91306394.7

申请日：1991-07-15

申请人： NOVELLUS SYSTEMS, INC.

发明人： Van den Ven, Everhardus P. ,  Broadbent, Eliot K. ,  Benzing, Jeffrey C. ,  Chin, Barry L. ,  Burkhart, Christopher W.

IPC分类号： C23C16/54 ,  C23C16/04 ,  C23C16/44 ,  H01L21/00

CPC分类号： C23C16/45521 ,  C23C16/04 ,  C23C16/455 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/6838 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  Y10T29/41

公开(公告)号：EP0628644A3

公开(公告)日：1995-09-13

申请号：EP94303709.3

申请日：1994-05-24

申请人： APPLIED MATERIALS, INC.

发明人： Aruga, Michio ,  Ohkura, Atsunobu ,  Saito, Akihiko ,  Suzuki, Kenji ,  Taguchi, Kenichi ,  Dubois, Dale Robert ,  Morrison, Alan Ferris

IPC分类号： C23C16/44 ,  C23C14/50

CPC分类号： C23C16/45521 ,  C23C16/4586 ,  C23C16/46

摘要： In CVD processes susceptors can be made of a thermally conductive ceramic such as aluminum nitride which has superior durability with respect to fluorine plasma. Such aluminum nitride susceptors (39) can include an embedded heater element (43) and/or embedded ground or RF electrodes (41) which as a result of their embedment are protected from the deleterious effects of the processing chamber environment. The conductors (87; 89, 91; 93) leading to these elements are protected from exposure to the process chamber environment by passing through a cylindrical member (25) filled with inert gas supporting the wafer support plate (39) of said susceptor. Alternatively, the conductors leading to these elements can be run through passages in a hermetically sealed stem (120) supporting the susceptor wafer support plate (100). The stem passes through the wall of the processing chamber so that connections to the susceptor wafer support plate can be made outside the processing chamber. Such a stem supporting the suspector support plate can also provide passages (144, 146) for passing vacuum and purge gas to the back of the wafer support plate. Vacuum and purge gas can then be distributed through passages (150, 151) in the wafer support plate as appropriate to its top surface for a vacuum chuck and perimeter purge gas flow.

公开(公告)号：EP0668608A1

公开(公告)日：1995-08-23

申请号：EP95300811.7

申请日：1995-02-09

申请人： APPLIED MATERIALS, INC.

发明人： Shamouilian, Shamouil ,  Birang, Manoocher ,  Goldspiel, Alan ,  Northup, Ron ,  Somekh, Sasson

IPC分类号： H01L21/00

CPC分类号： C23C16/45521 ,  C23C16/4586 ,  H01L21/6831 ,  H01L21/6833 ,  H02N13/00

摘要： An electrostatic chuck (32) is provided for firmly holding a semiconductor substrate (8) in position in a processing chamber (10). The electric connection (46) for the electrode (34) of the electrostatic chuck is provided through an aperture (44) in the pedestal (30) to protect the strap portion (40) of the chuck from erosion caused by the processing environment.

摘要翻译： 提供了用于将半导体衬底（8）牢固地保持在处理室（10）中的适当位置的静电吸盘（32）。 用于静电卡盘的电极（34）的电连接（46）通过基座（30）中的孔（44）设置，以保护卡盘的带部分（40）免受加工环境的侵蚀。

公开(公告)号：EP0456372B1

公开(公告)日：1995-03-22

申请号：EP91303628.1

申请日：1991-04-23

申请人： GENUS, INC.

发明人： Schmitz, John ,  Chow, Raymond L. ,  Scholz, Frederick J. ,  Turner, Norman L. ,  Uher, Frank Otto

IPC分类号： H01L21/00

CPC分类号： C23C16/45521 ,  C23C16/042 ,  C23C16/4585 ,  H01L21/67126 ,  H01L21/68721 ,  H01L21/68735

公开(公告)号：EP0628644A2

公开(公告)日：1994-12-14

申请号：EP94303709.3

申请日：1994-05-24

申请人： APPLIED MATERIALS, INC.

发明人： Aruga, Michio ,  Ohkura, Atsunobu ,  Saito, Akihiko ,  Suzuki, Kenji ,  Taguchi, Kenichi ,  Dubois, Dale Robert ,  Morrison, Alan Ferris

IPC分类号： C23C16/44 ,  C23C14/50

CPC分类号： C23C16/45521 ,  C23C16/4586 ,  C23C16/46

摘要： In CVD processes susceptors can be made of a thermally conductive ceramic such as aluminum nitride which has superior durability with respect to fluorine plasma. Such aluminum nitride susceptors (39) can include an embedded heater element (43) and/or embedded ground or RF electrodes (41) which as a result of their embedment are protected from the deleterious effects of the processing chamber environment. The conductors (87; 89, 91; 93) leading to these elements are protected from exposure to the process chamber environment by passing through a cylindrical member (25) filled with inert gas supporting the wafer support plate (39) of said susceptor. Alternatively, the conductors leading to these elements can be run through passages in a hermetically sealed stem (120) supporting the susceptor wafer support plate (100). The stem passes through the wall of the processing chamber so that connections to the susceptor wafer support plate can be made outside the processing chamber. Such a stem supporting the suspector support plate can also provide passages (144, 146) for passing vacuum and purge gas to the back of the wafer support plate. Vacuum and purge gas can then be distributed through passages (150, 151) in the wafer support plate as appropriate to its top surface for a vacuum chuck and perimeter purge gas flow.

摘要翻译： 在CVD工艺基座可以由陶瓷导热的：诸如氮化铝哪个具有相对于氟等离子体优异的耐久性。 氮化铝搜索感受器（39）可以包括在其中作为其嵌入的结果被保护从处理室环境的有害影响嵌入式加热器元件（43）和/或嵌入的接地或射频电极（41）。 导致合成元件的导体（87，89，91，93）通过穿过填充有惰性气体支撑所述基座的晶片支撑板（39）的圆筒形部件（25）保护，以免接触处理室的环境。 可替代地，导致合成元件的导体可以通过通道在密封杆（120）支撑在基座晶片支撑板（100）上运行。 杆穿过该处理室的壁所以没有对基座晶片支撑板的连接可以在处理腔室外部进行。 这样的干支撑所述支撑中犯罪嫌疑人板因此可以提供用于使真空通道（144，146）和吹扫气体到晶片支撑板的背面。 真空和吹扫气体然后可以通过在适当的到其顶表面的真空卡盘和周边吹扫气流的晶片支撑板的通道（150，151）被分布。

公开(公告)号：EP0353254B1

公开(公告)日：1994-10-05

申请号：EP88904757.7

申请日：1988-03-30

申请人： ADVANCED SEMICONDUCTOR MATERIALS AMERICA, INC.

发明人： DE BOER, Wiebe ,  OZIAS, Albert, E.

IPC分类号： B65G11/00 ,  B05C11/00 ,  H01L21/00 ,  C23C14/50 ,  C23C16/52 ,  C30B25/12

CPC分类号： C23C16/45521 ,  B05C11/08 ,  C23C16/4584 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68 ,  H01L21/68785 ,  H01L21/68792

摘要： A rotatable substrate supporting mechanism (20) for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor (30) forsupporting a single substrate (32), or wafer, for rotation about an axis normal to the center of the wafer. The mechanism is provided with a temperature sensing system (130) for producing signals indicative of sensed temperatures taken at the center of the susceptor and at various points about the periphery thereof. A gas purging system (176, 111 ,178) is provided for inhibiting the flow of reactant gas in unwanted areas of the reaction chamber and in the supporting system itself. Rotational driving of the mechanism is accomplished by a variable speed motor (194) under control of a circuit (212) which stops and starts the rotation at controlled speeds and stops the rotation at a homeposition for enhancing the handling of the wafers.