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公开(公告)号：EP3233732B1
公开(公告)日：2019-12-25
申请号：EP15870627.5
申请日：2015-11-25
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2.发明公开METHOD OF REPAIRING AND/OR PROTECTING A SURFACE IN A REACTOR 有权EEREM REAKTOR VERFAHREN ZUR REPARATUR UND / ODER ZUM SCHUTZ EINEROBERFLÄCHE
公开(公告)号：EP2809455A1
公开(公告)日：2014-12-10
申请号：EP13704304.8
申请日：2013-01-28
发明人： WERNER, Brad, Jason
CPC分类号： B05D5/00 , B01J19/02 , B01J2219/00024 , B01J2219/00272 , B01J2219/0236 , B05D3/0209 , B05D3/0254 , B05D3/0272 , B05D3/0486 , B05D5/005 , B05D7/22 , B05D7/52 , B05D2518/10 , B05D2518/12 , C09D183/00 , C09D183/16
摘要： A method of forming a heterogeneous protective layer on a surface of a component in a reactor is useful for repair and/or protection. The reactor may be used for production of polycrystalline silicon or a reactant thereof. The heterogeneous protective layer comprises silicon, and may comprise silicon carbide (SiC) and/or silicon nitride (Si3N4). The method comprises providing a polymeric composition for forming the heterogeneous protective layer. The polymeric composition may comprise a polycarbosilane and/or a polysilazane. The method further comprises providing the component. The surface of the component comprises carbon, such as graphite, carbon fiber reinforced carbon, or a combination thereof. The method further comprises applying the polymeric composition on the surface to form a pre-cured coating layer. The method further comprises heating the pre-cured coating layer to form the heterogeneous protective layer. The surface of the component is present within the reactor during heating of the pre-cured coating layer.
摘要翻译： 在反应器中的组分的表面上形成异质保护层的方法可用于修复和/或保护。 反应器可用于生产多晶硅或其反应物。 异质保护层包括硅，并且可以包括碳化硅（SiC）和/或氮化硅（Si 3 N 4）。 该方法包括提供用于形成异质保护层的聚合物组合物。 聚合物组合物可以包含聚碳硅烷和/或聚硅氮烷。 该方法还包括提供该组件。 组分的表面包括碳，例如石墨，碳纤维增强碳或其组合。 该方法还包括将聚合物组合物施加在表面上以形成预固化涂层。 该方法还包括加热预固化涂层以形成异质保护层。 在预固化涂层的加热期间，组分的表面存在于反应器内。
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3.发明公开MANUFACTURING APPARATUS FOR DEPOSITING A MATERIAL ON A CARRIER BODY 有权HERSTELLUNGSGERÄTZUR ABSCHEIDUNG EINES材料AUF EINEMTRÄGERKÖRPER
公开(公告)号：EP2734471A1
公开(公告)日：2014-05-28
申请号：EP11749597.8
申请日：2011-07-20
IPC分类号： C01B33/035 , F16J15/10
CPC分类号： C23C16/4409 , C01B33/035 , C23C16/4418
摘要： A gasket is used in a manufacturing apparatus, which deposits a material on a carrier body. A reaction chamber is defined by a housing and a base plate of the manufacturing apparatus. The gasket is disposed between the housing and the base plate for preventing a deposition composition, which comprises the material to be deposited or a precursor thereof, from escaping the reaction chamber. The gasket comprised a flexible graphite material for preventing the gasket from contaminating the material within said reaction chamber.
摘要翻译： 制造装置中使用垫圈，其将材料沉积在载体上。 反应室由制造装置的壳体和底板限定。 垫圈设置在壳体和基板之间，用于防止包括待沉积材料或其前体的沉积组合物逸出反应室。 垫圈包括柔性石墨材料，用于防止垫圈污染所述反应室内的材料。
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4.发明公开MANUFACTURING APPARATUS FOR DEPOSITING A MATERIAL AND AN ELECTRODE FOR USE THEREIN 有权VORRICHTUNG ZUM ABSCHEIDEN EINES STOFFS UND DARIN VERWENDETE ELEKTRODE
公开(公告)号：EP2266369A1
公开(公告)日：2010-12-29
申请号：EP09732543.5
申请日：2009-04-13
发明人： HILLABRAND, David , KNAPP, Theodore
IPC分类号： H05B3/03 , C23C16/44 , C01B33/035
CPC分类号： C23C16/4418 , C01B33/035 , C25D17/12 , H01R13/005 , H05B3/03
摘要： A manufacturing apparatus and an electrode for use with the manufacturing apparatus are provided for deposition of a material on a carrier body. Typically, the carrier body has a first end and a second end spaced from each other. A socket is disposed at each end of the carrier body. The manufacturing apparatus includes a housing that defines a chamber. At least one electrode is disposed through the housing with the electrode at least partially disposed within the chamber for coupling to the socket. The electrode has an exterior surface having a contact region that is adapted to contact the socket. An exterior coating is disposed on the exterior surface of the electrode, outside of the contact region. The exterior coating has an electrical conductivity of at least 9x10
6 Siemens/meter and a corrosion resistance that is higher than silver in a galvanic series that is based upon room temperature sea water as an electrolyte.摘要翻译： 提供了一种与制造装置一起使用的制造装置和电极，用于将材料沉积在载体主体上。 通常，载体主体具有彼此间隔开的第一端和第二端。 插座设置在承载体的每一端。 制造装置包括限定腔室的壳体。 至少一个电极通过壳体设置，电极至少部分地设置在腔室内用于联接到插座。 电极具有外表面，其具有适于接触插座的接触区域。 外部涂层设置在电极的外表面上，在接触区域的外部。 外部涂层的电导率至少为9×106西门子/米，耐腐蚀性高于基于室温海水作为电解质的电镀系列中的银。
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5.发明公开Apparatus for improving silicon processing efficiency 有权Vorrichtung zur Verbesserung der Effizienz der Behandlung von Silicium
公开(公告)号：EP1683584A3
公开(公告)日：2008-11-12
申请号：EP06075971.9
申请日：2003-08-19
发明人： Arvidson, Arvid Neil , Graham, Todd Stanley , Messner, Kathryn Elizabeth , Schmidt, Chris Tim , Horstman, Terence Lee
CPC分类号： G01N15/0272 , B07B13/02 , B07B13/04 , C30B15/02 , G01N2015/0288
摘要： A rotary indent classifier for processing polycristalline silicon workpieces includes: (i) a rotating cylinder having a circumferential edge with indents arrayed in increasing size from a first end of the cylinder to a second end of the cylinder, and (ii) a conveyor running longitudinally adjacent the cylinder, for conveying silicon pieces from the first end of the cylinder to the second end of the cylinder.
摘要翻译： 一种用于处理多晶硅工件以形成适用于切克劳斯基型工艺的多晶硅片的尺寸分布的方法包括：（1）通过化学气相沉积工艺制备多晶硅工件; （2）将多晶硅工件压裂成多晶硅片的混合物，其中多晶硅片具有不同的尺寸; 和（3）将多晶硅片的混合物分选成至少两个尺寸分布。 步骤（2）可以通过热冲击过程进行。 步骤（3）可以使用旋转凹口分类器进行。 一种用于执行该方法的旋转凹口分选机包括：（i）旋转圆筒，其具有沿圆柱体的第一端至第二端的尺寸排列的凹口的圆周边缘，以及（ii）纵向相邻的输送机 气缸，用于将硅片从气缸的第一端输送到气缸的第二端。
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6.发明公开Method and apparatus for improving silicon processing efficiency 有权Verfahren zur Verbesserung der Effizienz der Behandlung von Silicium
公开(公告)号：EP1391252A1
公开(公告)日：2004-02-25
申请号：EP03255135.0
申请日：2003-08-19
发明人： Arvidson, Arvid Neil , Graham, Todd Stanley , Messner, Kathryn Elizabeth , Schmidt, Chris Tim , Horstman, Terence Lee
CPC分类号： G01N15/0272 , B07B13/02 , B07B13/04 , C30B15/02 , G01N2015/0288
摘要： A method for processing polycrystalline silicon workpieces to form size distributions of polycrystalline silicon pieces suitable for use in a Czochralski-type process includes: (1) preparing a polycrystalline silicon workpiece by a chemical vapor deposition process; (2) fracturing the polycrystalline silicon workpiece into a mixture of polycrystalline silicon pieces, where the polycrystalline silicon pieces have varying sizes; and (3) sorting the mixture of polycrystalline silicon pieces into at least two size distributions. Step (2) may be carried out by a thermal shock process. Step (3) may be carried out using a rotary indent classifier. A rotary indent classifier for performing the method includes: (i) a rotating cylinder having a circumferential edge with indents arrayed in increasing size from a first end of the cylinder to a second end of the cylinder, and (ii) a conveyor running longitudinally adjacent the cylinder, for conveying silicon pieces from the first end of the cylinder to the second end of the cylinder.
摘要翻译： 一种用于处理多晶硅工件以形成适用于切克劳斯基型工艺的多晶硅片的尺寸分布的方法包括：（1）通过化学气相沉积工艺制备多晶硅工件; （2）将多晶硅工件压裂成多晶硅片的混合物，其中多晶硅片具有不同的尺寸; 和（3）将多晶硅片的混合物分选成至少两个尺寸分布。 步骤（2）可以通过热冲击过程进行。 步骤（3）可以使用旋转凹口分类器进行。 一种用于执行该方法的旋转凹口分选机包括：（i）旋转圆筒，其具有沿圆柱体的第一端至第二端的尺寸排列的凹口的圆周边缘，以及（ii）纵向相邻的输送机 气缸，用于将硅片从气缸的第一端输送到气缸的第二端。
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7.发明公开
公开(公告)号：EP0533438A3
公开(公告)日：1993-12-08
申请号：EP92308391.9
申请日：1992-09-15
CPC分类号： B24C3/325 , B24C1/003 , C01B33/035
摘要： The present invention is a process for the cleaning of the inner surfaces of a chemical vapor deposition reactor used in the production of polycrystalline silicon. The process comprises impacting the surfaces to be cleaned with solid carbon dioxide pellets. The carbon dioxide pellets dislodge silicon deposits from the surface of the reactor without damaging the surface of the reactor and without providing a source for contamination of polycrystalline silicon produced in the cleaned reactor. The present process is particularly useful for the cleaning of the inner surfaces of chemical vapor deposition reactors used in the production of semi-conductor grade silicon.
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公开(公告)号：EP3008417A1
公开(公告)日：2016-04-20
申请号：EP14735800.6
申请日：2014-06-11
发明人： OLIVA, John C. , WERNER, Brad , ZALAR, Michael
CPC分类号： F28F7/02 , F28F9/02 , F28F9/0278 , F28F9/0282 , F28F13/08
摘要： A heat exchanger transfers heat between first and second material streams. The heat exchanger includes a body portion including vent channels configured to pass the first material stream through the body portion. The body portion further includes feed channels configured to pass the second material stream through the body portion. The feed channels are spaced from and in thermal communication with the vent channels such that at least one of the first and second material streams transfer heat with another one of the first and second material streams. Each of the feed channels has an inlet having a crosssectional area with the cross-sectional area of the inlet of at least one of the feed channels different than the cross-sectional area of the inlet of another one of the feed channels for normalizing a flow rate of the second material stream through the feed channels.
摘要翻译： 热交换器在第一和第二材料流之间传递热量。 热交换器包括主体部分，该主体部分包括构造成使第一材料流穿过主体部分的通气通道。 主体部分还包括构造成使第二材料流通过主体部分的进料通道。 进料通道与通风通道间隔开并且与通风通道热连通，使得第一和第二材料流中的至少一个与第一和第二材料流中的另一个传热。 每个供给通道具有入口，该入口具有横截面积，其中至少一个供给通道的入口的横截面积不同于另一个供给通道的入口的横截面面积，用于使流动归一化 第二材料流通过进料通道的速率。
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9.发明公开Quantitative measurement of gase phase process intermediates using raman spectroscopy 审中-公开量子信号气相色谱法测定拉曼光谱
公开(公告)号：EP2799396A1
公开(公告)日：2014-11-05
申请号：EP14170474.2
申请日：2010-05-11
发明人： Harms, Greg , Kreszowski, Douglas , Licht, David , Lipp, Elmer , Molnar, Mike , Pinet, Marc
IPC分类号： C01B33/027 , G01N21/27 , G01N21/65
CPC分类号： G01N21/65 , C01B33/027 , G01N21/274 , Y10T436/12
摘要： A method for quantitatively monitoring gas phase materials in a chemical process is provided and includes, providing a gaseous feed stream containing one or more reactant gases of interest; exposing the gaseous feed stream to coherent radiation from a Raman spectroscopic device; acquiring a Raman spectroscopic signal from each of the gaseous components in the feed stream; analysing the spectroscopic signal to determine the presence and concentration of each of the gaseous components; and displaying the results of the analysis. In one embodiment, the method is useful for quantitatively monitoring gas phase materials in a process for making high purity silicon.
摘要翻译： 提供了一种在化学过程中定量监测气相材料的方法，包括提供含有一种或多种感兴趣的反应物气体的气态进料流; 将气态进料流暴露于来自拉曼光谱装置的相干辐射; 从进料流中的每个气体组分获取拉曼光谱信号; 分析光谱信号以确定每种气态组分的存在和浓度; 并显示分析结果。 在一个实施方案中，该方法可用于在制备高纯度硅的方法中定量监测气相材料。
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10.发明公开Method of determining an amount of impurities that a contaminating material contributes to high purity silicon and furnace for treating high purity silicon 审中-公开为高纯度硅的治疗测定的杂质，这是与一个污染材料对高纯硅一起加入的方法，和炉
公开(公告)号：EP2567939A3
公开(公告)日：2014-07-09
申请号：EP12195527.2
申请日：2009-09-24
发明人： Depesa, Dennis , Host, Jon , Houthoofd, Troy , Rytlewski, Alan
IPC分类号： C01B33/037 , C01B33/021 , C30B29/06 , C30B35/00 , F27D1/00 , F27B11/00 , F27B17/00 , F27D3/12 , C30B33/02 , F27D19/00
CPC分类号： F27B17/0033 , C01B33/021 , C01B33/037 , C30B29/06 , C30B33/02 , C30B35/00 , F27D19/00 , F27D2019/0006
摘要： A method of determining an amount of impurities that a contaminating material contributes to high purity silicon comprises the step of partially encasing a sample of high purity silicon in the contaminating material. The sample encased in the contaminating material is heated within a furnace. A change in impurity content of the high purity silicon is determined after the step of heating, compared to an impurity content of the high purity silicon prior to the step of heating. A furnace for heat treating high purity silicon comprises a housing that defines a heating chamber. The housing is at least partially formed from low contaminant material that contributes less than 400 parts per trillion of impurities to the high purity silicon during heating at annealing temperatures for a sufficient period time to anneal the high purity silicon, and the furnace contributes an average of less than 400 parts per trillion of impurities to the high purity silicon under the same heating conditions.
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