公开(公告)号：EP2059103A4

公开(公告)日：2010-08-04

申请号：EP07806064

申请日：2007-08-24

Applicant: UNIV TOHOKU NAT UNIV CORP ,  FOUND ADVANCEMENT INT SCIENCE

Inventor： OHMI TADAHIRO

IPC: H05K3/46 ,  H01L21/312 ,  H01L21/768 ,  H01L23/12 ,  H01L23/522

CPC classification number: H01L23/5222 ,  H01L21/02115 ,  H01L21/0212 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76883 ,  H01L23/3677 ,  H01L23/5283 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H05K1/0203 ,  H05K1/024 ,  H05K3/467 ,  H05K3/4688 ,  H01L2924/00

公开(公告)号：EP1988567A4

公开(公告)日：2009-12-02

申请号：EP07707705

申请日：2007-01-30

Applicant: UNIV TOHOKU ,  FOUND ADVANCEMENT INT SCIENCE

Inventor： OHMI TADAHIRO ,  MORINAGA HITOSHI

IPC: H01L21/306 ,  G01B11/06

CPC classification number: H01L21/02052 ,  H01L21/02074

公开(公告)号：EP1720202A4

公开(公告)日：2009-04-29

申请号：EP05709633

申请日：2005-02-02

Applicant: FOUND ADVANCEMENT INT SCIENCE

Inventor： OHMI TADAHIRO ,  GOTO TETSUYA

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/768

CPC classification number: H01L21/31116 ,  H01L21/02063 ,  H01L21/31138 ,  H01L21/76802 ,  H01L21/76814

Abstract: During etching of a contact hole, not only the energy of ion exposure but also the gas composition are altered to change the etching from a high-rate etching to a low-rate etching, thereby reducing the damage. In the low-rate etching, since the gas composition is also altered, a firm fluorocarbon film is formed on the bottom of the contact hole, and the etching can be carried out while protecting the silicon surface. Consequently, inactivation of the impurities with which the silicon is doped can be prevented.

公开(公告)号：EP2197020A4

公开(公告)日：2012-12-26

申请号：EP08830661

申请日：2008-09-12

Applicant: NAT UNIVERSITY CORP TOHOKU UNVERSITY ,  FOUND ADVANCEMENT INT SCIENCE

Inventor： OHMI TADAHIRO ,  GOTO TETSUYA

IPC: H01J61/06 ,  H01J9/02 ,  H01J61/70

CPC classification number: H01J61/0675 ,  H01J9/022 ,  H01J61/72

公开(公告)号：EP1906440A4

公开(公告)日：2011-06-01

申请号：EP06757382

申请日：2006-06-16

Applicant: UNIV TOHOKU ,  FOUND ADVANCEMENT INT SCIENCE

Inventor： OHMI TADAHIRO ,  TERAMOTO AKINOBU

IPC: H01L21/336 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/092 ,  H01L29/786

CPC classification number: H01L27/1203 ,  H01L29/045

公开(公告)号：EP2040302A4

公开(公告)日：2011-05-18

申请号：EP07767367

申请日：2007-06-21

Applicant: UNIV TOHOKU NAT UNIV CORP ,  FOUND ADVANCEMENT INT SCIENCE

Inventor： OHMI TADAHIRO ,  TERAMOTO AKINOBU ,  CHENG WEITAO

IPC: H01L29/786

CPC classification number: H01L29/78654 ,  H01L29/78603 ,  H01L29/78648

公开(公告)号：EP2293323A4

公开(公告)日：2012-11-28

申请号：EP09746471

申请日：2009-04-17

Applicant: UNIV TOHOKU NAT UNIV CORP ,  FOUND ADVANCEMENT INT SCIENCE

Inventor： OHMI TADAHIRO ,  TERAMOTO AKINOBU ,  TANAKA HIROAKI ,  ISOGAI TATSUNORI

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L29/417 ,  H01L29/78

CPC classification number: H01L21/28518 ,  H01L21/26513 ,  H01L21/28052 ,  H01L21/324 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/66575

Abstract: A semiconductor device manufacturing method includes the steps of ion-implanting a p-type or an n-type impurity into a Si layer portion to become a p-type or an n-type contact region of a semiconductor device, forming a metal film for a contact on a surface of the contact region without performing heat treatment for activating implanted ions after the ion-implanting step, and forming a silicide of a metal of the metal film by causing the metal to react with the Si layer portion by heating. It is desired to simultaneously perform the step of forming the silicide and the step of activating the implanted ions by heat treatment after the metal film is formed.

公开(公告)号：EP1959492A4

公开(公告)日：2011-06-01

申请号：EP06833800

申请日：2006-11-30

Applicant: UNIV TOHOKU ,  FOUND ADVANCEMENT INT SCIENCE

Inventor： OHMI TADAHIRO ,  TERAMOTO AKINOBU

IPC: H01L21/8238 ,  H01L21/84 ,  H01L27/08 ,  H01L27/092 ,  H01L29/786

CPC classification number: H01L27/1211 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/845 ,  H01L29/045 ,  H01L29/785 ,  H01L2029/7857

公开(公告)号：EP2043159A4

公开(公告)日：2011-05-18

申请号：EP07790721

申请日：2007-07-12

Applicant: UNIV TOHOKU NAT UNIV CORP ,  FOUND ADVANCEMENT INT SCIENCE

Inventor： OHMI TADAHIRO ,  TERAMOTO AKINOBU ,  KURODA RIHITO

IPC: H01L29/786 ,  H01L21/28 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/092 ,  H01L29/417

CPC classification number: H01L27/1203 ,  H01L21/28202 ,  H01L29/518 ,  H01L29/78654 ,  H01L29/78696

公开(公告)号：EP2051292A4

公开(公告)日：2009-11-18

申请号：EP07790720

申请日：2007-07-12

Applicant: UNIV TOHOKU NAT UNIV CORP ,  FOUND ADVANCEMENT INT SCIENCE

Inventor： OHMI TADAHIRO ,  TERAMOTO AKINOBU ,  KURODA RIHITO

IPC: H01L21/336 ,  H01L21/02 ,  H01L21/28 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/088 ,  H01L27/092 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  H01L29/78

CPC classification number: H01L29/045 ,  H01L21/02057 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/823807 ,  H01L21/823835 ,  H01L21/82385 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/518 ,  H01L29/785 ,  H01L2029/7857