公开(公告)号：EP1694885A2

公开(公告)日：2006-08-30

申请号：EP04760000.2

申请日：2004-04-16

申请人： APPLIED MATERIALS, INC. ,  Ellwanger, Russell C.

发明人： YANG, Michael, X. ,  XI, Ming ,  BRITCHER, Eric, B. ,  DONOSO, Bernardo ,  PANG, Lily, L. ,  SHERMAN, Svetlana ,  HO, Henry ,  NGUYEN, Anh, N. ,  LERNER, Alexander, N. ,  D'AMBRA, Allen, L. ,  SHANMUGASUNDRAM, Arulkumar ,  ISHIKAWA, Tetsuya ,  RABINOVICH, Yevgeniy ,  LUBOMIRSKY, Dmitry ,  MOK, Yeuk-Fai, Edwin ,  NGUYEN, Son, T.

IPC分类号： C25D1/00

CPC分类号： H01L21/67167 ,  B08B3/02 ,  C25D5/003 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D21/02 ,  C25D21/08 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/6723 ,  H01L21/68 ,  H01L21/6838 ,  H01L21/68707

摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

公开(公告)号：EP1186005A1

公开(公告)日：2002-03-13

申请号：EP00936092.6

申请日：2000-05-19

申请人： Applied Materials, Inc.

发明人： CHEN, Aihua Steven ,  HO, Henry ,  YANG, Michael, X. ,  PEUSE, Bruce, W. ,  LITTAU, Karl ,  CHANG, Yu

IPC分类号： H01L21/00

CPC分类号： H01L21/67103

摘要： A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

公开(公告)号：EP1299573A2

公开(公告)日：2003-04-09

申请号：EP01948659.6

申请日：2001-06-22

申请人： Applied Materials, Inc.

发明人： HO, Henry

IPC分类号： C23C16/46 ,  C23C16/458

CPC分类号： C23C16/4586 ,  C23C16/46

摘要： A wafer processing method, comprising processing the wafer in a reaction chamber comprising a heater having an interior volume; heating the reaction chamber with the heater, purging an inert gas into the heater interior volume, and venting the inert gas.

公开(公告)号：EP1466033A1

公开(公告)日：2004-10-13

申请号：EP03729688.6

申请日：2003-01-15

申请人： Applied Materials, Inc.

发明人： JIN, Xiaoliang ,  WANG, Shulin ,  LUO, Lee ,  HO, Henry ,  CHEN, Steven, A.

IPC分类号： C23C16/455 ,  C23C16/46 ,  H01L21/00 ,  C23C16/44

CPC分类号： C23C16/45521 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45591 ,  C23C16/46 ,  H01L21/67109

摘要： An apparatus that includes a pumping plate (812) having a skirt (822), where the skirt contains a number of holes (828) and a water access slot, and where the number of holes are sized and positioned to provide uniform heating of a susceptor (806).

摘要翻译： 一种设备，其包括具有裙部（822）的汲取板（812），其中裙部包含多个孔（828）和通水槽，并且其中孔的数量被设定尺寸并定位成提供 感受器（806）。

公开(公告)号：EP1204783A1

公开(公告)日：2002-05-15

申请号：EP00957994.7

申请日：2000-07-10

申请人： Applied Materials, Inc.

发明人： YANG, Michael, X. ,  KAO, Chien-Teh ,  LITTAU, Karl ,  CHEN, Steven, A. ,  HO, Henry ,  YU, Ying

IPC分类号： C23C16/34 ,  C23C16/44

CPC分类号： C23C16/4412 ,  C23C16/345

摘要： The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer. A semicondutor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 to 500 Torr.

公开(公告)号：EP1466033B1

公开(公告)日：2005-11-09

申请号：EP03729688.6

申请日：2003-01-15

申请人： APPLIED MATERIALS, INC.

发明人： JIN, Xiaoliang ,  WANG, Shulin ,  LUO, Lee ,  HO, Henry ,  CHEN, Steven, A.

IPC分类号： C23C16/455 ,  C23C16/46 ,  H01L21/00 ,  C23C16/44

CPC分类号： C23C16/45521 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45591 ,  C23C16/46 ,  H01L21/67109

摘要： An apparatus that includes a pumping plate (812) having a skirt (822), where the skirt contains a number of holes (828) and a water access slot, and where the number of holes are sized and positioned to provide uniform heating of a susceptor (806).

公开(公告)号：EP1540709A2

公开(公告)日：2005-06-15

申请号：EP03789703.0

申请日：2003-09-19

申请人： Applied Materials, Inc.

发明人： HO, Henry ,  CUI, Anqing ,  YUAN, Xiaoxiong

IPC分类号： H01L21/00 ,  C23C16/458 ,  H05B3/28

CPC分类号： H01L21/67248 ,  H01L21/67103 ,  H01L21/67109

摘要： A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element, and the second heating element is offset from the first heating element in a plane substantially parallel to at least one of the first plane and the second plane.

公开(公告)号：EP1064671A1

公开(公告)日：2001-01-03

申请号：EP99911348.3

申请日：1999-03-11

申请人： Applied Materials, Inc.

发明人： LI, Steven, T. ,  RUSPINI, Andrew, J. ,  HO, Henry ,  CHANG, Yu ,  CHEN, Aihua ,  BUI, Binh

IPC分类号： H01J37/32

CPC分类号： H01J37/32862 ,  H01J37/321 ,  H01J2237/335

摘要： An apparatus comprising a semiconductor processing chamber, a plasma generator, and a pipe connecting a semiconductor processing chamber and the plasma generator. The plasma generator includes a generation chamber, a radio frequency generator which generates an ion plasma within the generation chamber, and a magnetic device which confines the plasma primarily within a center region of the generation chamber.