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18 条记录 (耗时 0.013 秒)

    MEMS DEVICE HAVING A GETTER
    3.
    发明公开
    MEMS DEVICE HAVING A GETTER 有权
    MEMS-VORRICHTUNG MIT EINEM GETTER

    公开(公告)号：EP2973685A4

    公开(公告)日：2016-10-12

    申请号：EP14774321

    申请日：2014-03-13

    申请人： BOSCH GMBH ROBERT

    发明人： SAMARAO ASHWIN ,  O'BRIEN GARY ,  FEYH ANDO ,  YAMA GARY ,  GRAHAM ANDREW ,  KIM BONGSANG ,  PURKL FABIAN

    IPC分类号： H01L23/12 ,  B81B7/02 ,  H01L21/322

    CPC分类号： B81C1/00285 ,  B81C2201/0115 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/035 ,  H01L21/3223 ,  H01L21/3225 ,  H01L23/28

    摘要： A microelectromechanical system (MEMS) device includes a high density getter. The high density getter includes a silicon surface area formed by porosification or by the formation of trenches within a sealed cavity of the device. The silicon surface area includes a deposition of titanium or other gettering material to reduce the amount of gas present in the sealed chamber such that a low pressure chamber is formed. The high density getter is used in bolometers and gyroscopes but is not limited to those devices.

    摘要翻译： 微机电系统（MEMS）装置包括高密度吸气剂。 高密度吸气剂包括通过孔化形成的硅表面积或者通过在器件的密封空腔内形成沟槽。 硅表面积包括钛或其它吸气材料的沉积物以减少存在于密封室中的气体的量，从而形成低压室。 高密度吸气剂用于测辐射热计和陀螺仪，但不限于这些设备。

    ANTI-GETTER: EXPANDABLE POLYMER MICROSPHERES FOR MEMS DEVICES
    4.
    发明公开
    ANTI-GETTER: EXPANDABLE POLYMER MICROSPHERES FOR MEMS DEVICES 审中-公开

    公开(公告)号：EP3230200A4

    公开(公告)日：2018-07-04

    申请号：EP15866598

    申请日：2015-12-10

    申请人： BOSCH GMBH ROBERT

    发明人： SAMARAO ASHWIN K ,  O'BRIEN GARY ,  FEYH ANDO

    IPC分类号： B81B7/02 ,  B81C1/00 ,  B81C3/00

    CPC分类号： B81B7/0038 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C1/00285

    摘要： A method of fabricating a MEMS device includes depositing an expandable material into a first recess of a cap wafer. The cap wafer includes a plurality of walls that surround and define the first recess and a second recess. The cap wafer is bonded to a MEMS wafer including a first MEMS device and a second MEMS device. The first MEMS device is encapsulated in the first recess, and the second MEMS device is encapsulated in the second recess. The expandable material is then heated to at least an activation temperature to cause the expandable material to expand after the first recess has been sealed. The expansion of the expandable material causes a reduction in volume of the first recess.

    AN ELECTRONIC DEVICE WITH AN INTERLOCKING MOLD PACKAGE
    5.
    发明公开
    AN ELECTRONIC DEVICE WITH AN INTERLOCKING MOLD PACKAGE 有权
    ELEKTRONISCHE VORRICHTUNG MIT INEINANDERGREIFENDEMGUSSGEHÄUSE

    公开(公告)号：EP2973688A4

    公开(公告)日：2016-10-05

    申请号：EP14768801

    申请日：2014-03-10

    申请人： BOSCH GMBH ROBERT

    发明人： FEYH ANDO ,  O'BRIEN GARY ,  GRAHAM ANDREW

    IPC分类号： H01L23/28

    CPC分类号： H01L23/3142 ,  B81B7/0077 ,  B81C2203/0154 ,  B81C2203/0163 ,  H01L21/56 ,  H01L21/565 ,  H01L23/3121 ,  H01L2224/48091 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

    摘要： An electronic device includes a mold package which encapsulates a portion of the electronic device and does not encapsulate another portion of the electronic device to enable a sensing portion of the electronic device to be exposed to a condition to be sensed. In an electronic sensing device having a sensor formed by a substrate such as silicon, a sensor area is not encapsulated, but areas surrounding the sensor area are encapsulated. The area surrounding the sensor area includes one or more trenches or interlock structures formed in the surrounding substrate which receives the mold material to provide an interlock feature. The interlock feature reduces or substantially prevents the mold from delaminating at an interface of the mold and the substrate.

    摘要翻译： 一种电子设备包括：模具封装，其封装电子设备的一部分，并且不封装电子设备的另一部分，以使电子设备的感测部分能够暴露于待感测的状态。 在具有由诸如硅的基板形成的传感器的电子感测装置中，传感器区域不被封装，而是围绕传感器区域的区域被封装。 围绕传感器区域的区域包括形成在周围基板中的一个或多个沟槽或互锁结构，其接收模具材料以提供互锁特征。 互锁特征减少或基本上防止模具在模具和基底的界面处分层。

    NANOSTRUCTURED LANTHANUM OXIDE HUMIDITY SENSOR
    8.
    发明公开
    NANOSTRUCTURED LANTHANUM OXIDE HUMIDITY SENSOR 审中-公开

    公开(公告)号：EP3241019A4

    公开(公告)日：2018-06-13

    申请号：EP15876104

    申请日：2015-12-28

    申请人： BOSCH GMBH ROBERT

    发明人： SAMARAO ASHWIN K ,  O'BRIEN GARY ,  FEYH ANDO

    IPC分类号： G01N27/12 ,  G01N27/07 ,  G01N27/14

    CPC分类号： G01N27/121 ,  C01F17/0043 ,  G01N27/07 ,  G01N27/127 ,  G01N27/14

    摘要： A thin film gas sensor device includes a substrate, a nanostructured thin film layer, and a first and a second electrode. The nanostructured thin film layer is supported by the substrate and is formed with a semi-conductor material including holes. The semiconductor material is configured to undergo an increase in a density of the holes in the presence of a target gas, thereby decreasing an electrical resistance of the nanostructured thin film layer. The first and the second electrodes are supported by the substrate and are operably connected to the nanostructured thin film layer, such that the decrease in electrical resistance can be detected.

    TITANIUM NITRIDE FOR MEMS BOLOMETERS
    10.
    发明公开
    TITANIUM NITRIDE FOR MEMS BOLOMETERS 审中-公开
    TITANNANNRIDFÜRMEMS-BOLOMETER

    公开(公告)号：EP3050105A4

    公开(公告)日：2017-05-10

    申请号：EP14847383

    申请日：2014-09-26

    申请人： BOSCH GMBH ROBERT

    发明人： SAMARAO ASHWIN K ,  O'BRIEN GARY ,  FEYH ANDO ,  PURKL FABIAN ,  YAMA GARY

    IPC分类号： G01J5/20 ,  G01J5/02

    CPC分类号： G01J5/20 ,  G01J5/024

    摘要： A method for fabricating a semiconductor device includes patterning a sacrificial layer on a substrate to define a bolometer, with trenches being formed in the sacrificial layer to define anchors for the bolometer, the trenches extending through the sacrificial layer and exposing conductive elements at the bottom of the trenches. A thin titanium nitride layer is then deposited on the sacrificial layer and within the trenches. The titanium nitride layer is configured to form a structural support for the bolometer and to provide an electrical connection to the conductive elements on the substrate.

    摘要翻译： 一种用于制造半导体器件的方法包括：在衬底上图案化牺牲层以限定辐射热测量计，在牺牲层中形成沟槽以限定辐射热测量计的锚定件，沟槽延伸穿过牺牲层并暴露位于底部的导电元件 壕沟。 然后在牺牲层上和沟槽内沉积薄的氮化钛层。 氮化钛层被配置成形成用于测辐射热计的结构支撑并且提供到衬底上的导电元件的电连接。