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公开(公告)号:EP1868241A4
公开(公告)日:2012-02-15
申请号:EP06729450
申请日:2006-03-17
Applicant: DOWA ELECTRONICS MATERIALS CO
Inventor: OSHIKA YOSHIKAZU , NAKANO MASAYUKI
CPC classification number: H05K1/111 , B23K35/001 , H01L21/4864 , H01L23/15 , H01L23/49811 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/83 , H01L2224/2908 , H01L2224/29082 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/83192 , H01L2224/838 , H01L2224/83825 , H01L2924/00014 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10329 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/1301 , H01L2924/14 , H01L2924/15724 , H01L2924/351 , H05K1/0306 , H05K3/341 , H05K3/388 , Y02P70/611 , H01L2924/00 , H01L2924/0105 , H01L2924/01079 , H01L2924/01047 , H01L2924/0103 , H01L2924/01049 , H01L2924/01082 , H01L2224/48
Abstract: A submount (50) comprising a submount substrate (52) and a solder layer (54) adherently deposited on the submount substrate (52) for soldering with a semiconductor device, characterized in that said solder layer (54) is formed of constituent elements in a composition ratio which varies in a depth direction of said solder layer (54).
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2.METAL-CERAMIC COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING SAME 有权
Title translation: 金属陶瓷复合基板及其制造方法公开(公告)号:EP1909321A4
公开(公告)日:2009-09-23
申请号:EP06756534
申请日:2006-05-24
Applicant: DOWA ELECTRONICS MATERIALS CO
Inventor: OSHIKA YOSHIKAZU
CPC classification number: H05K1/053 , H01L23/142 , H01L23/15 , H01L23/3735 , H01L24/28 , H01L24/45 , H01L24/48 , H01L24/83 , H01L2224/29144 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2224/83192 , H01L2224/83801 , H01L2224/85424 , H01L2224/85439 , H01L2224/85444 , H01L2224/85447 , H01L2224/8546 , H01L2224/85466 , H01L2224/85469 , H01L2224/85484 , H01L2924/00011 , H01L2924/01079 , H01L2924/12041 , H01L2924/12042 , H01L2924/1301 , H01L2924/14 , H01S5/02272 , H01S5/02476 , H05K2201/0179 , H01L2924/00014 , H01L2924/0105 , H01L2924/00 , H01L2924/01047 , H01L2924/01004
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3.SOLDER LAYER, HEAT SINK USING SUCH SOLDER LAYER AND METHOD FOR MANUFACTURING SUCH HEAT SINK 有权
Title translation: 焊料层,用用于制造这样的冷却体这样的钎焊层和方法HEAT SINK公开(公告)号:EP1939929A4
公开(公告)日:2012-03-14
申请号:EP06810273
申请日:2006-09-19
Applicant: DOWA ELECTRONICS MATERIALS CO
Inventor: NAKANO MASAYUKI , OSHIKA YOSHIKAZU
IPC: H01L21/52 , B23K35/26 , B23K35/28 , B23K35/30 , C22C5/02 , H01L21/50 , H01L21/60 , H01L23/373 , H05K1/11
CPC classification number: C22C5/02 , B23K35/262 , B23K35/264 , B23K35/282 , B23K35/286 , B23K35/3006 , B23K35/3013 , B23K35/302 , B23K35/3033 , H01L21/50 , H01L23/3735 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/83 , H01L33/62 , H01L2224/04026 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2224/83192 , H01L2224/83801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2924/1301 , H01L2924/14 , H01L2924/157 , H01L2924/15724 , H01L2924/19107 , H01L2924/351 , H05K1/0306 , H05K1/111 , H05K3/3457 , H05K2201/09745 , Y02P70/611 , Y10T29/49393 , H01L2924/00014 , H01L2924/00015 , H01L2924/00
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4.SOLDER LAYER, SUBSTRATE FOR DEVICE JUNCTION UTILIZING THE SAME, AND PROCESS FOR MANUFACTURING THE SUBSTRATE 有权
Title translation: 焊料层基板布置以变迁以便及其制造方法在基板公开(公告)号:EP2009971A4
公开(公告)日:2011-01-12
申请号:EP07740178
申请日:2007-03-28
Applicant: DOWA ELECTRONICS MATERIALS CO
Inventor: OSHIKA YOSHIKAZU , HASHIMOTO MUNENORI , NAKANO MASAYUKI
CPC classification number: H05K3/3463 , H01L24/29 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/83 , H01L24/85 , H01L33/62 , H01L2224/29 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/2919 , H01L2224/45144 , H01L2224/48227 , H01L2224/48472 , H01L2224/83192 , H01L2224/83801 , H01L2224/85 , H01L2924/00011 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/12041 , H01L2924/12042 , H01L2924/1301 , H01L2924/14 , H01L2924/157 , H01L2924/15724 , H01L2924/15747 , H01L2924/15787 , H01L2924/351 , H05K2201/10992 , Y10T29/49144 , Y10T29/49179 , H01L2924/00014 , H01L2924/00 , H01L2924/01083 , H01L2924/00015 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/29298
Abstract: A solder layer, a substrate for device joining utilizing the same and a method of manufacturing the substrate are provided whereby the device joined remains thermally unaffected, an initial bonding strength in solder joint is enhanced and the device can be soldered reliably. The solder layer formed on a base substrate (2) consists of a plurality of layers (5a) of a solder free from lead, which are different in its phase from one another. They are constituted by a layer of a phase that is completely melted, and a layer of a phase that is not completely melted at a temperature not less than a eutectic temperature of the solder. The solder layer (5) can be applied to a device joining substrate (1) comprising an electrode layer (4) formed on the base substrate (2) and the solder layer (5) formed on the electrode layer.
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