Abstract:
When soldering a package having an electrode on which Ni/Au or Ag-Pd alloy is plated to a printed circuit board having a Cu electrode or an electrode on which Cu is plated, a solid-phase diffusion layer is formed within the inside of a layered solder material for bonding different species of electrodes by heating and cooling the layered solder material for bonding different species of electrodes. The layered solder material is composed of a solder material of Sn-Ag-Cu series or Sn-Sb series and a solder material of Sn-Ag-Cu-Ni series or Sn-Pb series. The electrode on which Ni/Au or Ag-Pd alloy is plated and the Cu electrode or the electrode on which Cu is plated are soldered with the solder material of Sn-Ag-Cu series or Sn-Sb series being attached to the Cu electrode and the solder material of Sn-Ag-Cu-Ni series or Sn-Cu series being attached to the electrode on which Ni/Au or Ag-Pd alloy is plated. This allows formation of intermetallic compounds to be restrained, thereby soldering them with high bonding reliability.
Abstract:
A solder layer, a substrate for device joining utilizing the same and a method of manufacturing the substrate are provided whereby the device joined remains thermally unaffected, an initial bonding strength in solder joint is enhanced and the device can be soldered reliably. The solder layer formed on a base substrate (2) consists of a plurality of layers (5a) of a solder free from lead, which are different in its phase from one another. They are constituted by a layer of a phase that is completely melted, and a layer of a phase that is not completely melted at a temperature not less than a eutectic temperature of the solder. The solder layer (5) can be applied to a device joining substrate (1) comprising an electrode layer (4) formed on the base substrate (2) and the solder layer (5) formed on the electrode layer.
Abstract:
A lead free solder hierarchy for use in the second level solder connection of electronic components such as joining an electronic module (20) to a circuit board (120). An off-eutectic solder (60) concentration of SnCu or SnAg is used for the module side connection. This off-eutectic solder (60) contains sufficient intermetallics to provide the module side connection with a robust second level assembly and rework process. The off-eutectic composition (60) provides an intermetallic phase structure in the module side fillet during assembly. The intermetallic phase structure eliminates problems of tilt and collapse during second level assembly and aids in rework by providing a more cohesive joint allowing removal of the columns (100) from the board (120) without simultaneous removal from the module (20).
Abstract:
An electronic package (10) is provided which includes a circuit board (12) having a substrate (14) and circuitry (16) and a surface mount device (22) having a contact terminal (24). A mounting pad (28) is formed on the circuit board (12). The electronic package (10) also includes a solder joint (30) connecting the contact terminal (24) of the surface mount device (22) to the mounting pad (28) on the circuit board (12). The solder joint (30) includes a reflowable solder and a plurality of stand-off members (32 or 42). The stand-off members (32 or 42) provide a separation distance (H) between the circuit board (12) and surface mount device (22) in the range of about 0.01 mm to 0.10 mm.
Abstract:
A semiconductor device includes a semiconductor element having a plurality of element electrodes and a ball electrode electrically connected to at least one element electrode out of the plurality of element electrodes. The ball electrode is made of a Sn-Zn-based lead-free solder including 7 through 9.5 wt% of zinc and the remaining of tin.
Abstract:
The object of the invention is to provide a power semiconductor module having solder joints that are highly reliable for temperature cycles. In a power semiconductor module of the present invention, a solder joint between a metal circuit pattern and metal terminal on an insulation substrate is formed by covering, from above, a high melting point solder, which is joined on the metal circuit pattern and has a prescribed thickness, with a low melting point solder and then joining the metal terminal with the low melting point solder.
Abstract:
A stress relaxation electronic part to be mounted on a wiring board and having a conductive stress relaxing mechanism body on the side where the part is connected to the wiring board.
Abstract:
An integrated circuit chip (903), which has a plurality of pads (903b) and non-reflowable contact members (1201) to be connected by reflow attachment to external parts. Each of these contact members (1201) has a height-to-diameter ratio and uniform diameter favorable for absorbing strain under thermomechanical stress. The members have a solderable surface (1202) on each end and a layer of reflowable material on each end. Each member is solder-attached (1204) at one end to a chip contact pad (903b), while the other end (1203) of each member is operable for reflow attachment to external parts.
Abstract:
The invention relates to a semiconductor component in a chip format, comprising a chip with at least one first insulating layer (3) and electric contact surfaces (2) devoid of said insulating layer. Conductors (5) run from the electric contact surfaces (2) to the foot areas (10) of external connection elements (12) along the insulating layer (3). Another insulating layer (8) is also provided with through openings (9) leading from the outside to the foot areas (10) of the external connection elements (12). A conductive adhesive (11) is placed in said openings (9) and metallic globules (12) are placed at least on the outside thereon. The semiconductor element can also contain a solder paste instead of the conductive adhesive in the through openings (9), whereby the metallized synthetic globules are placed thereon. The invention also relates to a method for producing the semiconductor element thus described.
Abstract:
A mounting structure is provided for mounting a semiconductor device (10) having an electrode (14) on a mounting substrate (12) having a conductive pad (18). A metallic bump (16) electrically connects the electrode (14) of the semiconductor device (10) to the conductive pad (18). A first eutectic solder (20) is used for soldering between the metallic bump (16) and the electrode (14) of the semiconductor device (10). A second eutectic solder (22) is used for soldering between the metallic bump (18) and the conductive pad (18) of the substrate (12). The melting point of the metallic bump (16) is higher than that of the eutectic solders (20,22) and the resistance to fatigue of the first or second eutectic solder is higher than that of the other eutectic solder. The eutectic solder with the highest fatigue resistance is composed of an Sn component of 63% by mass, a Pb component of 34.3% by mass, an In component of 1% by mass, an Sb component of 0.7% by mass, and an Ag component of 1% by mass.