摘要:
An electron beam inspection apparatus comprising an electrooptical unit (70) comprising an electrooptical system for irradiating an object with a primary electron beam from an electron source and projecting the image of secondary electrons emitted from the object and a detector for detecting the image of secondary electrons projected from the electrooptical system, a stage unit (50) for moving the object relatively to the electrooptical system while holding it a mini-environment unit (20) for blocking adhesion of dust to the object by supplying cleaning gas thereto, a working chamber (31) containing the stage unit and controllable to vacuum atmosphere, at least two loading chambers (41, 42) disposed between the mini-environment unit and the working chamber and controllable independently to vacuum atmosphere, and a loader (60) for feeding the object to the stage unit through the loading chambers.
摘要:
An electron beam device for applying a primary electron beam onto a sample, and detecting a secondary electron beam produced from a sample surface by the irradiation to evaluate the sample surface, characterized in that the cathode of an electron gun for emitting primary electron beam have a plurality of emitters disposed at intervals on one circle centered on the optical axis of a primary electron optical system and emitting a primary electron beam, and the plurality of emitters are disposed so that points projected on a line parallel to the scanning direction of the primary electron beam are arranged at equal intervals.
摘要:
A wafer inspecting instrument for inspecting a pattern formed on a wafer by irradiating the wafer with a charged particle beams. The wafer inspecting instrument comprises a charged particle beam generating means, a primary optical system including a means for irradiating a multi-aperture plate having a plurality of apertures with a charged particle beam generated from the beam generating means and for focusing a plurality of charged particle beams having passed through the apertures in the wafer surface, a secondary optical system which secondary charged particle beams radiated from the wafer enter, an electron beam apparatus including a detection system for detecting the secondary charged particle beam to output an electric signal and a processing control system for processing and evaluating the electric signal, a stage apparatus for holding and moving the wafer, and a working chamber which can be controlled to a desired atmosphere.
摘要:
A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25·1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25·11.