摘要:
An electron beam device for applying a primary electron beam onto a sample, and detecting a secondary electron beam produced from a sample surface by the irradiation to evaluate the sample surface, characterized in that the cathode of an electron gun for emitting primary electron beam have a plurality of emitters disposed at intervals on one circle centered on the optical axis of a primary electron optical system and emitting a primary electron beam, and the plurality of emitters are disposed so that points projected on a line parallel to the scanning direction of the primary electron beam are arranged at equal intervals.
摘要:
An electron beam inspection apparatus comprising an electrooptical unit (70) comprising an electrooptical system for irradiating an object with a primary electron beam from an electron source and projecting the image of secondary electrons emitted from the object and a detector for detecting the image of secondary electrons projected from the electrooptical system, a stage unit (50) for moving the object relatively to the electrooptical system while holding it a mini-environment unit (20) for blocking adhesion of dust to the object by supplying cleaning gas thereto, a working chamber (31) containing the stage unit and controllable to vacuum atmosphere, at least two loading chambers (41, 42) disposed between the mini-environment unit and the working chamber and controllable independently to vacuum atmosphere, and a loader (60) for feeding the object to the stage unit through the loading chambers.
摘要:
A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25·1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25·11.
摘要:
An electron device capable of evaluating a sample at high throughput and high S/N. An electron beam emitted from an electron gun is irradiated, through an electrostatic lens (4-1), an objective lens (11-1), etc., in a diagonal direction on a sample (W) placed on an X-Y-theta stage (9-1), and secondary electrons or reflected electrons are discharged from the sample (W). The incident angle of the primary electron beam is set to about not less than 35º and less than 90º by controlling a polarizer (8-1). The electrons discharged from the sample (W) are guided in the vertical direction to form an image on a detector.
摘要:
A device and a method for electroless plating; the device capable of easily forming a plating film of uniform thickness on the plated surface of a plated material, comprising a holding part (10) having a heating part (14) and holding the plated material with the plated surface facing downward and a plating bath (24) allowing electroless plating solution (22) with a specified temperature to lead into a plating chamber (28) and holding the solution while allowing the solution to overflow from an overflow weir, wherein the plated material held by the holding part (10) is brought into contact with the plating solution (22) in the plating bath (24) for plating the plated material.
摘要:
A wafer inspecting instrument for inspecting a pattern formed on a wafer by irradiating the wafer with a charged particle beams. The wafer inspecting instrument comprises a charged particle beam generating means, a primary optical system including a means for irradiating a multi-aperture plate having a plurality of apertures with a charged particle beam generated from the beam generating means and for focusing a plurality of charged particle beams having passed through the apertures in the wafer surface, a secondary optical system which secondary charged particle beams radiated from the wafer enter, an electron beam apparatus including a detection system for detecting the secondary charged particle beam to output an electric signal and a processing control system for processing and evaluating the electric signal, a stage apparatus for holding and moving the wafer, and a working chamber which can be controlled to a desired atmosphere.