摘要:
An electron beam device for applying a primary electron beam onto a sample, and detecting a secondary electron beam produced from a sample surface by the irradiation to evaluate the sample surface, characterized in that the cathode of an electron gun for emitting primary electron beam have a plurality of emitters disposed at intervals on one circle centered on the optical axis of a primary electron optical system and emitting a primary electron beam, and the plurality of emitters are disposed so that points projected on a line parallel to the scanning direction of the primary electron beam are arranged at equal intervals.
摘要:
A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25·1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25·11.
摘要:
There are disclosed a processing method and a processing apparatus using a fast atom beam to process a micro-sized structure on a desired face and portion of a workpiece having a complex shape. In this invention, an electron beam and/or a focused ion beam is applied to a surface of a workpiece to produce a masking film layer on the workpiece. After that, a fast atom beam is applied to the workpiece remove the surface layer of the workpiece where the masking film layer is not formed.
摘要:
An electron beam inspection apparatus comprising an electrooptical unit (70) comprising an electrooptical system for irradiating an object with a primary electron beam from an electron source and projecting the image of secondary electrons emitted from the object and a detector for detecting the image of secondary electrons projected from the electrooptical system, a stage unit (50) for moving the object relatively to the electrooptical system while holding it a mini-environment unit (20) for blocking adhesion of dust to the object by supplying cleaning gas thereto, a working chamber (31) containing the stage unit and controllable to vacuum atmosphere, at least two loading chambers (41, 42) disposed between the mini-environment unit and the working chamber and controllable independently to vacuum atmosphere, and a loader (60) for feeding the object to the stage unit through the loading chambers.
摘要:
The invention provides an efficient beam source that produces a directional, high-density energy beam having a relatively large size. The beam source comprises three electrodes, i.e., an upstream electrode (23) located downstream from a gas entrance port (12) in a discharge tube (11) and having a large number of holes through gas passes, a meshed intermediate electrode (24), and a downstream electrode (14) having a large number of holes through which beams pass. Plasma means (20) for producing plasma is provided outside the discharge tube between the upstream and intermediate electrodes.
摘要:
An electron device capable of evaluating a sample at high throughput and high S/N. An electron beam emitted from an electron gun is irradiated, through an electrostatic lens (4-1), an objective lens (11-1), etc., in a diagonal direction on a sample (W) placed on an X-Y-theta stage (9-1), and secondary electrons or reflected electrons are discharged from the sample (W). The incident angle of the primary electron beam is set to about not less than 35º and less than 90º by controlling a polarizer (8-1). The electrons discharged from the sample (W) are guided in the vertical direction to form an image on a detector.
摘要:
The present invention provides a surface inspection method and apparatus for inspecting a surface of a sample, in which a resistive film is coated on the surface, and a beam is irradiated to the surface having the resistive film coated thereon, to thereby conduct inspection of the surface of the sample. In the surface inspection method of the present invention, a resistive film having an arbitrarily determined thickness t1 is first coated on a surface of a sample. Thereafter, a part of the resistive film having the arbitrarily determined thickness t1 is dissolved in a solvent, to thereby reduce the thickness of the resistive film to a desired level. This enables precise control of a value of resistance of the resistive film and suppresses distortion of an image to be detected.
摘要:
A wafer inspecting instrument for inspecting a pattern formed on a wafer by irradiating the wafer with a charged particle beams. The wafer inspecting instrument comprises a charged particle beam generating means, a primary optical system including a means for irradiating a multi-aperture plate having a plurality of apertures with a charged particle beam generated from the beam generating means and for focusing a plurality of charged particle beams having passed through the apertures in the wafer surface, a secondary optical system which secondary charged particle beams radiated from the wafer enter, an electron beam apparatus including a detection system for detecting the secondary charged particle beam to output an electric signal and a processing control system for processing and evaluating the electric signal, a stage apparatus for holding and moving the wafer, and a working chamber which can be controlled to a desired atmosphere.
摘要:
An electron beam inspecting apparatus is a map projection type and comprises a primary electro-optical system which molds an electron beam emitted from an electron gun into a rectangular form and irradiates the surface of a sample to be inspected with the molded electron beam, a secondary electro-optical system which converges secondary electrons emitted from the sample, a detector which converts the converged secondary electrons into an optical image via a fluorescent plate to focus them to a line sensor, and a controller which controls the charge transfer time to transfer a line image captured by a pixel array provided in the line sensor by interlocking with the transfer speed of stage which moves the sample.