公开(公告)号：EP0359513A2

公开(公告)日：1990-03-21

申请号：EP89309232.0

申请日：1989-09-12

申请人： HITACHI, LTD.

发明人： Suzuki, Hideo ,  Shinohara, Hiroichi ,  Ogihara, Satoru ,  Nakanishi, Keiichirou

IPC分类号： H01L23/64 ,  H01L23/498 ,  H01L23/055

CPC分类号： H01L23/49827 ,  H01L23/473 ,  H01L23/642 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/73253 ,  H01L2924/01014 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/15311 ,  H01L2924/16152

摘要： A semiconductor chip carrier for carrying a single chip (15) and having a built-in capacitor, comprises a ceramic insulator body (2) having first and second opposite main faces, and a plurality of conductor lines (6,7) comprising power lines, ground lines and signal lines for forming connections to said chip extending through said ceramic body (2) from one main face to the other. A layer (3) of ceramic dielectric material is embedded in said ceramic body remote from said main faces, and electrode layers embedded in the ceramic body (2) contact the capacitor layer (3), to form the built-in capacitor. The power and ground lines (16) pass through and contact the capacitor layer (3) and are connected to said electrodes so that said capacitor provides capacitance between the power lines and the ground lines. To minimize noise generation and improve signal processing speed, the signal lines (7) do not contact said capacitor layer (3) and extend past it at locations spaced laterally from it.

摘要翻译： 一种用于承载单芯片（15）并具有内置电容器的半导体芯片载体，包括具有第一和第二相对主面的陶瓷绝缘体（2），以及包括电力线 ，接地线和信号线，用于形成从所述陶瓷体（2）延伸穿过所述芯片从一个主面到另一主面的连接。 陶瓷电介质材料的层（3）嵌入在远离所述主面的所述陶瓷体中，并且嵌入陶瓷体（2）中的电极层与电容器层（3）接触，形成内置的电容器。 电源和接地线（16）通过并接触电容器层（3）并与所述电极连接，使得所述电容器在电源线和接地线之间提供电容。 为了最小化噪声产生并提高信号处理速度，信号线（7）不与所述电容器层（3）接触并且在与其横向间隔开的位置延伸过去。

公开(公告)号：EP0345809A1

公开(公告)日：1989-12-13

申请号：EP89110488.7

申请日：1989-06-09

申请人： HITACHI, LTD.

发明人： Shinohara, Hiroichi ,  Suzuki, Hideo ,  Ogihara, Satoru ,  Arakawa, Hideo

IPC分类号： B32B18/00 ,  H01L21/48 ,  H01L23/14 ,  C04B35/80 ,  C04B35/82

CPC分类号： H05K3/4629 ,  B32B18/00 ,  C04B35/63416 ,  C04B35/63436 ,  C04B35/63468 ,  C04B35/803 ,  C04B35/82 ,  C04B2235/6567 ,  C04B2235/66 ,  C04B2235/785 ,  C04B2237/341 ,  C04B2237/346 ,  C04B2237/38 ,  C04B2237/565 ,  H01L21/4807 ,  H01L23/15 ,  H01L23/49866 ,  H01L23/5385 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/01014 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15192 ,  H01L2924/15312 ,  H01L2924/15787 ,  H01L2924/3025 ,  H05K1/0306 ,  H05K3/4688 ,  H05K2201/029

摘要： The present invention provides a ceramic laminated circuit substrate which is less in fluctuation of degree of shrinkage at firing and is less in voids and is suitable for formation of functional modules. This substrate comprises a conductor layer (3) and a plurality of ceramic insulating layers (2B) wherein said ceramic insulating layers include at least one fiber-­containing composite ceramic insulating layer. The present invention further provides a method for making this substrate which comprises preparing fiber-containing composite green sheets by adding to a green sheet raw material at least one of whiskers, glass filaments and chopped strands as fibers (1A), laminat­ing these fiber-containing composite green sheets in such direction that their casting directions are different together with green sheets containing no fibers to form a laminate and firing this laminate.

摘要翻译： 本发明提供一种陶瓷层叠电路基板，其在烧成时的收缩度波动小，空隙小，适于形成功能模块。 该基板包括导体层（3）和多个陶瓷绝缘层（2B），其中所述陶瓷绝缘层包括至少一个含纤维复合陶瓷绝缘层。 本发明还提供一种制造该基材的方法，其包括通过向生片原料中加入作为纤维（1A）的晶须，玻璃丝和短切原丝中的至少一种而制备含纤维复合生片，将这些含纤维 复合生片以其铸造方向与不含纤维的生片不同的方向形成层压体并焙烧该层压体。

公开(公告)号：EP0081365B1

公开(公告)日：1986-09-03

申请号：EP82306475.3

申请日：1982-12-06

申请人： Hitachi, Ltd.

发明人： Ogihara, Satoru ,  Takeda, Yukio ,  Maeda, Kunihiro ,  Nakamura, Kousuke ,  Ura, Mitsuru

IPC分类号： H01B3/12 ,  C04B35/56 ,  H01L23/24

CPC分类号： C04B35/575 ,  C04B35/565 ,  H01B3/12 ,  H01L23/15 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01037 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01055 ,  H01L2924/01057 ,  H01L2924/01066 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1532 ,  H01L2924/16152 ,  H01L2924/19107 ,  H05K1/0306 ,  H01L2924/00014 ,  H01L2924/00

摘要： A sliicon carbide sintered body comprising silicon carbide as principal constituent, a first component for providing electrical insulating properties to said silicon carbide, said first component comprising at least one of metallic beryllium, beryllium compounds, boron and boron compounds and contained in a total amount of 0.01 to 3.5% by weight calculated as metal, and a second component which can further promote said silicon carbide sinterability provided by said first component and which does not diffuse easily in the particles of said silicon carbide, said second component comprising at least one substance selected from the Group I elements exclusive of hydrogen and francium, Group II elements exclusive of beryllium, radium and mercury, Group III elements exclusive of boron and aluminum, Group IV elements exclusive of carbon, Group V elements, Group VIa elements, Group VIIa elements Group VIII elements exclusive of iron, and compounds thereof, and contained in a total amount of 0.01 to 10% by weight, with the remainder substantially comprising silicon carbide. This silicon carbide sintered body has an electrical resistivity of 10 OMEGA .cm or above at room temperature and is also excellent in electrical insulating properties and can be advantageously used as substrates for semiconductor devices, etc.

公开(公告)号：EP0131242A2

公开(公告)日：1985-01-16

申请号：EP84107705.0

申请日：1984-07-03

申请人： HITACHI, LTD.

发明人： Watanabe, Yutaka ,  Kobayashi, Fumiyuki ,  Ogihara, Satoru ,  Ohzawa, Yoshiyuki

IPC分类号： H01L23/52 ,  H01L23/14 ,  H01L21/48

CPC分类号： H01L21/4807 ,  H01L23/15 ,  H01L23/5383 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/01014 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/15312 ,  H05K1/0306 ,  H05K3/4676 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/24926

摘要： The multi-layer ceramic substrate of this invention includes conductor layers (4,7,10-13) and insulating layers (2, 3) disposed between the conductor layers. The insulating layers include the layers of a sintered body principally composed of mullite and the layers of a sintered body principally composed of alumina. This multilayer ceramic substrate is produced by laminating the green sheets and sintering the laminate. The green sheets principally composed of mullite and the green sheet principally composed of alumina are prepared, and they are laminated and sintered.

公开(公告)号：EP0107821A1

公开(公告)日：1984-05-09

申请号：EP83109973.4

申请日：1983-10-05

申请人： HITACHI, LTD.

发明人： Maeda, Kunihiro ,  Usami, Katsuhisa ,  Takeda, Yukio ,  Ogihara, Satoru ,  Asai, Osamu

IPC分类号： C04B35/56 ,  H01B3/12

CPC分类号： C04B35/575 ,  H01B3/12 ,  H01L23/15 ,  H01L2924/0002 ,  H05K1/0306 ,  H01L2924/00

摘要： A sintered silicon carbide body having a high thermal conductivity and a high electrical insulation without any drop substantially throughout the sintered body is produced from a powdery silicon carbide composition comprising at least 90% by weight of silicon carbide powders having an average particle size of not more than 10 µm and 0.01 to 4% by weight of powders of beryllium or its compound having a particle size of not more than 30 µm in terms of beryllium atom, a nitrogen content of the composition being not more than 500 ppm.

公开(公告)号：EP0211619B1

公开(公告)日：1992-01-22

申请号：EP86305895.4

申请日：1986-07-31

申请人： HITACHI, LTD.

发明人： Shinohara, Hiroichi ,  Ushifusa, Nobuyuki ,  Nagayama, Kousei ,  Ogihara, Satoru

IPC分类号： H01L23/15 ,  H01L23/538 ,  C03C10/00

CPC分类号： H01L23/5383 ,  C03C10/0027 ,  H01L23/15 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01055 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/15312 ,  H05K1/0306 ,  H05K3/4629 ,  H05K3/4676 ,  Y10S428/901 ,  Y10T428/24926

公开(公告)号：EP0359513A3

公开(公告)日：1990-12-19

申请号：EP89309232.0

申请日：1989-09-12

申请人： HITACHI, LTD.

发明人： Suzuki, Hideo ,  Shinohara, Hiroichi ,  Ogihara, Satoru ,  Nakanishi, Keiichirou

IPC分类号： H01L23/64 ,  H01L23/498 ,  H01L23/055

CPC分类号： H01L23/49827 ,  H01L23/473 ,  H01L23/642 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/73253 ,  H01L2924/01014 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/15311 ,  H01L2924/16152

摘要： A semiconductor chip carrier for carrying a single chip (15) and having a built-in capacitor, comprises a ceramic insulator body (2) having first and second opposite main faces, and a plurality of conductor lines (6,7) comprising power lines, ground lines and signal lines for forming connections to said chip extending through said ceramic body (2) from one main face to the other. A layer (3) of ceramic dielectric material is embedded in said ceramic body remote from said main faces, and electrode layers embedded in the ceramic body (2) contact the capacitor layer (3), to form the built-in capacitor. The power and ground lines (16) pass through and contact the capacitor layer (3) and are connected to said electrodes so that said capacitor provides capacitance between the power lines and the ground lines. To minimize noise generation and improve signal processing speed, the signal lines (7) do not contact said capacitor layer (3) and extend past it at locations spaced laterally from it.

公开(公告)号：EP0165821B1

公开(公告)日：1988-11-09

申请号：EP85304428.7

申请日：1985-06-20

申请人： HITACHI, LTD.

发明人： Yamazaki, Takeo ,  Ogihara, Satoru ,  Kosugi, Tetsuo ,  Shirakawa, Shingo ,  Owada, Shinichi

IPC分类号： H01C7/10 ,  H01C7/12 ,  H01H33/16 ,  H01C7/00 ,  H01C17/30

CPC分类号： H01C7/001 ,  H01C7/112 ,  H01C17/30 ,  H01H9/42

公开(公告)号：EP0211618A3

公开(公告)日：1987-12-16

申请号：EP86305894

申请日：1986-07-31

申请人： HITACHI, LTD.

发明人： Tsuchiya, Masatoshi ,  Ogihara, Satoru ,  Kagohara, Hiromi ,  Otsuka, Kanji ,  Oishi, Tomoji

IPC分类号： H01L23/04 ,  H01L23/14 ,  H01L23/10

CPC分类号： H01L23/057 ,  H01L23/10 ,  H01L23/15 ,  H01L23/49579 ,  H01L24/48 ,  H01L25/0655 ,  H01L2224/16145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12036 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/1532 ,  H01L2924/16152 ,  Y10S428/901 ,  H01L2924/00 ,  H01L2224/45099

摘要： An integrated circuit package has a semiconductor element (1) mounted on an insulating substrate (4) which has a coefficient of thermal expansion from 35 to 40 x 10 -7 /°C and a high thermal conductivity, preferably a sintered product of silicon carbide. The substrate (4), and the element (1) are covered by a cap (5) which has a coefficient of thermal expansion of 20 to 55 x 10 -7 /°C and an airtight seal is provided by sealing glass (6) which has a coefficient of thermal expansion from 30 to 55 x 10 -7 /°C. Leads (3) extend through the glass (6) and are connected to the substrate (1) via wires (2). The leads have a coefficient of thermal expansion less than 40 x 10- 7 / °C, e.g. an alloy of iron containing nickel and cobalt. In this way the coefficient of thermal expansion of the leads (3) is set approximately equal to, or less than the coefficient of thermal expansion of the substrate (4), and this prevents cracking of the glass (6) when the package cools from the glass sealing temperature, or when the package is tested by thermal cycles.

公开(公告)号：EP0165821A3

公开(公告)日：1986-07-16

申请号：EP85304428

申请日：1985-06-20

申请人： HITACHI, LTD.

发明人： Yamazaki, Takeo ,  Ogihara, Satoru ,  Kosugi, Tetsuo ,  Shirakawa, Shingo ,  Owada, Shinichi

IPC分类号： H01C07/10 ,  H01C07/12 ,  H01H33/16 ,  H01C07/00 ,  H01C17/30

CPC分类号： H01C7/001 ,  H01C7/112 ,  H01C17/30 ,  H01H9/42

摘要： A composite sintered oxide resistor comprising crystal grains of zinc oxide and crystal grains of a zinc oxide compound of other metal or semi-metal element than zinc, and a grain boundary layer having an electric resistance equal to or lower than that of the crystal grains of zinc oxide between the individual crystal grains has a very large withstanding capacity against switch surge, a small non-linear coefficient of voltage in the voltage-current characteristics, a positive, smaller resistance-temperature coefficient, and a small percent change in resisitivity after heat treatment at 500° in the atmosphere.