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    BONDING WIRE FOR SEMICONDUCTOR DEVICE
    1.
    发明公开
    BONDING WIRE FOR SEMICONDUCTOR DEVICE 审中-实审

    公开(公告)号：EP4365931A1

    公开(公告)日：2024-05-08

    申请号：EP22948050.4

    申请日：2022-10-18

    申请人： NIPPON STEEL Chemical & Material Co., Ltd. ,  Nippon Micrometal Corporation

    发明人： UNO, Tomohiro ,  OYAMADA, Tetsuya ,  ODA, Daizo ,  ETO, Motoki

    IPC分类号： H01L21/60

    CPC分类号： H01L21/60

    摘要： There is provided a novel Cu bonding wire for semiconductor devices that reduces a galvanic corrosion in a rigorous high-temperature environment to achieve a favorable bond reliability of the 2nd bonding part. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer containing a conductive metal other than Cu formed on a surface of the core material. The bonding wire is characterized in that:
    in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES), an average value of sum of a Pd concentration CPd (atomic%) and an Ni concentration CNi (atomic%), CPd+CNi, for measurement points in the coating layer is 50 atomic% or more, an average value of a ratio of CPd to CNi, CPd/CNi, for measurement points in the coating layer is 0.2 or more and 20 or less and a thickness dt of the coating layer is 20 nm or more and 180 nm or less,
    an Au concentration CAu at a surface of the wire is 10 atomic% or more and 85 atomic% or less, and
    an average size of crystal grains in a circumferential direction of the wire is 35 nm or more and 200 nm or less when the surface of the wire is analyzed by using an Electron Backscattered Diffraction (EBSD) method.

    AL BONDING WIRE
    3.
    发明公开
    AL BONDING WIRE 审中-公开

    公开(公告)号：EP4120328A1

    公开(公告)日：2023-01-18

    申请号：EP20924290.8

    申请日：2020-03-13

    申请人： Nippon Micrometal Corporation ,  NIPPON STEEL Chemical & Material Co., Ltd.

    发明人： YAMADA, Takashi ,  NISHIBAYASHI, Akihito ,  HAIBARA, Teruo ,  ODA, Daizo ,  ETO, Motoki ,  OYAMADA, Tetsuya ,  KOBAYASHI, Takayuki ,  UNO, Tomohiro

    IPC分类号： H01L21/60

    摘要： There is provided an Al bonding wire which can achieve a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The Al bonding wire contains 0.01 to 1% of Sc, and further contains 0.01 to 0.1% in total of at least one or more of Y, La, Ce, Pr and Nd. With regard to the Al bonding wire, a recrystallization temperature thereof is increased, so that the proceeding of recrystallization of the bonding wire can be suppressed, and strength of the wire can be prevented from being decreased even when the semiconductor device is continuously used under a high temperature environment. Accordingly, the Al bonding wire can sufficiently secure the reliability of the bonded parts after a high-temperature long-term hysteresis.

    BONDING WIRE FOR SEMICONDUCTOR DEVICE
    5.
    发明公开
    BONDING WIRE FOR SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：EP3349246A1

    公开(公告)日：2018-07-18

    申请号：EP18154972.6

    申请日：2016-05-19

    申请人： Nippon Micrometal Corporation ,  Nippon Steel & Sumikin Materials Co., Ltd.

    发明人： YAMADA, Takashi ,  ODA, Daizo ,  HAIBARA, Teruo ,  OISHI, Ryo ,  SAITO, Kazuyuki ,  UNO, Tomohiro

    IPC分类号： H01L23/49 ,  C22C9/00

    摘要： There is provided a bonding wire for a semiconductor device, the bonding wire including a Cu alloy core material and a Pd coating layer formed on a surface thereof, achieving simultaneously improvement in bonding reliability of a ball bonded part in high temperature and an strength ratio (= ultimate strength/0.2% offset yield strength) of 1.1 to 1.6.
    Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 µm provides a strength ratio of 1.6 or less.