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    AL BONDING WIRE
    2.
    发明公开
    AL BONDING WIRE 审中-公开

    公开(公告)号：EP4120328A1

    公开(公告)日：2023-01-18

    申请号：EP20924290.8

    申请日：2020-03-13

    申请人： Nippon Micrometal Corporation ,  NIPPON STEEL Chemical & Material Co., Ltd.

    发明人： YAMADA, Takashi ,  NISHIBAYASHI, Akihito ,  HAIBARA, Teruo ,  ODA, Daizo ,  ETO, Motoki ,  OYAMADA, Tetsuya ,  KOBAYASHI, Takayuki ,  UNO, Tomohiro

    IPC分类号： H01L21/60

    摘要： There is provided an Al bonding wire which can achieve a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The Al bonding wire contains 0.01 to 1% of Sc, and further contains 0.01 to 0.1% in total of at least one or more of Y, La, Ce, Pr and Nd. With regard to the Al bonding wire, a recrystallization temperature thereof is increased, so that the proceeding of recrystallization of the bonding wire can be suppressed, and strength of the wire can be prevented from being decreased even when the semiconductor device is continuously used under a high temperature environment. Accordingly, the Al bonding wire can sufficiently secure the reliability of the bonded parts after a high-temperature long-term hysteresis.

    BONDING WIRE FOR SEMICONDUCTOR DEVICE
    3.
    发明公开
    BONDING WIRE FOR SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：EP3349246A1

    公开(公告)日：2018-07-18

    申请号：EP18154972.6

    申请日：2016-05-19

    申请人： Nippon Micrometal Corporation ,  Nippon Steel & Sumikin Materials Co., Ltd.

    发明人： YAMADA, Takashi ,  ODA, Daizo ,  HAIBARA, Teruo ,  OISHI, Ryo ,  SAITO, Kazuyuki ,  UNO, Tomohiro

    IPC分类号： H01L23/49 ,  C22C9/00

    摘要： There is provided a bonding wire for a semiconductor device, the bonding wire including a Cu alloy core material and a Pd coating layer formed on a surface thereof, achieving simultaneously improvement in bonding reliability of a ball bonded part in high temperature and an strength ratio (= ultimate strength/0.2% offset yield strength) of 1.1 to 1.6.
    Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 µm provides a strength ratio of 1.6 or less.

    BONDING WIRE FOR SEMICONDUCTOR DEVICES
    5.
    发明公开
    BONDING WIRE FOR SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：EP4174202A1

    公开(公告)日：2023-05-03

    申请号：EP22798228.7

    申请日：2022-03-16

    申请人： Nippon Micrometal Corporation

    发明人： ODA, Daizo ,  ETO, Motoki ,  YAMADA, Takashi ,  HAIBARA, Teruo ,  OISHI, Ryo

    IPC分类号： C22C9/00 ,  H01L21/60

    摘要： There is provided a novel Cu bonding wire that achieves a favorable FAB shape and achieve a favorable bond reliability of the 2nd bonding part even in a rigorous high-temperature environment. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic% or more formed on a surface of the core material. The bonding wire is characterized in that:
    in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer,
    a thickness of the coating layer is 10 nm or more and 130 nm or less,
    an average value X is 0.2 or more and 35.0 or less where X is defined as an average value of a ratio of a Pd concentration C Pd (atomic%) to an Ni concentration C Ni (atomic%), C Pd /C Ni , for all measurement points in the coating layer,
    the total number of measurement points in the coating layer whose absolute deviation from the average value X is 0.3X or less is 50% or more relative to the total number of measurement points in the coating layer, and
    the bonding wire satisfies at least one of following conditions (i) and (ii):
    (i) a concentration of In relative to the entire wire is 1 ppm by mass or more and 100 ppm by mass or less; and
    (ii) a concentration of Ag relative to the entire wire is 1 ppm by mass or more and 500 ppm by mass or less.

    BONDING WIRE FOR SEMICONDUCTOR DEVICE
    6.
    发明公开
    BONDING WIRE FOR SEMICONDUCTOR DEVICE 有权
    半导体器件的接合线

    公开(公告)号：EP3282473A1

    公开(公告)日：2018-02-14

    申请号：EP16811374.4

    申请日：2016-05-19

    申请人： Nippon Micrometal Corporation ,  Nippon Steel & Sumikin Materials Co., Ltd.

    发明人： YAMADA, Takashi ,  ODA, Daizo ,  HAIBARA, Teruo ,  OISHI, Ryo ,  SAITO, Kazuyuki ,  UNO, Tomohiro

    IPC分类号： H01L21/60

    摘要： There is provided a bonding wire for a semiconductor device, the bonding wire including a Cu alloy core material and a Pd coating layer formed on a surface thereof, achieving simultaneously improvement in bonding reliability of a ball bonded part in high temperature and an strength ratio (= ultimate strength/0.2% offset yield strength) of 1.1 to 1.6.
    Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 µm provides a strength ratio of 1.6 or less.

    摘要翻译： 提供一种用于半导体器件的接合线，所述接合线包括Cu合金芯材和在其表面上形成的Pd涂层，同时实现高温下球接合部的接合可靠性的提高和强度比（ =极限强度/ 0.2％偏移屈服强度）为1.1至1.6。 含有在高温环境下提供接合可靠性的元件提高球接合部在高温下的接合可靠性。 另外，在测量芯材截面上的晶体取向时，将在线材长度方向上的结晶取向中的晶体取向<100>的取向比例设定为相对于线材长度方向15°以下的角度为30％以上 垂直于键合线的线轴的方向，并且使得在与键合线的线轴垂直的方向上的芯材的横截面中的平均晶粒尺寸为0.9至1.5μm，提供1.6的强度比 或更少。