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公开(公告)号:EP1051750B1
公开(公告)日:2008-04-23
申请号:EP99964506.2
申请日:1999-11-22
申请人: NXP B.V.
IPC分类号: H01L23/485
CPC分类号: H01L24/06 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05073 , H01L2224/05552 , H01L2224/05624 , H01L2224/05639 , H01L2224/05647 , H01L2224/05666 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48463 , H01L2224/48624 , H01L2224/48639 , H01L2224/48647 , H01L2224/48666 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48766 , H01L2224/48824 , H01L2224/48839 , H01L2224/48847 , H01L2224/48866 , H01L2224/85201 , H01L2224/85205 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01039 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/05042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/00014 , H01L2924/00 , H01L2924/2075
摘要: An integrated circuit device comprises an active circuit (4) provided in an active circuit area at a surface (5) of a semiconductor body (6), a plurality of bond pads (3) disposed substantially over the active circuit area and electrical connections between the bond pads (3) and the active circuit (4). Each one of the bond pads (3) has a wire-bonding region (23) for bonding a wire (24) and a circuit-connecting region (22) for the electrical connection with the active circuit (4). The active circuit (4) comprises active circuit devices (7), an interconnect structure comprising at least one patterned metal layer disposed in overlying relationship relative to the active circuit devices (7) and a layer (20) of passivating material disposed atop the interconnect structure, through which the electrical connections pass. The layer (20) of passivating material substantially consists of inorganic material and is substantially free from interruptions beneath the wire-bonding region (23) of the bond pads (3). The bond pads (3) and the layer (20) of passivating material have thicknesses that jointly counteract the occurrence of damage to the active circuit (4) during bonding of the wire (24) to the wire-bonding region (23).
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公开(公告)号:EP1051750A1
公开(公告)日:2000-11-15
申请号:EP99964506.2
申请日:1999-11-22
IPC分类号: H01L23/485
CPC分类号: H01L24/06 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05073 , H01L2224/05552 , H01L2224/05624 , H01L2224/05639 , H01L2224/05647 , H01L2224/05666 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48463 , H01L2224/48624 , H01L2224/48639 , H01L2224/48647 , H01L2224/48666 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48766 , H01L2224/48824 , H01L2224/48839 , H01L2224/48847 , H01L2224/48866 , H01L2224/85201 , H01L2224/85205 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01039 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/05042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/00014 , H01L2924/00 , H01L2924/2075
摘要: An integrated circuit device comprises an active circuit (4) provided in an active circuit area at a surface (5) of a semiconductor body (6), a plurality of bond pads (3) disposed substantially over the active circuit area and electrical connections between the bond pads (3) and the active circuit (4). Each one of the bond pads (3) has a wire-bonding region (23) for bonding a wire (24) and a circuit-connecting region (22) for the electrical connection with the active circuit (4). The active circuit (4) comprises active circuit devices (7), an interconnect structure comprising at least one patterned metal layer disposed in overlying relationship relative to the active circuit devices (7) and a layer (20) of passivating material disposed atop the interconnect structure, through which the electrical connections pass. The layer (20) of passivating material substantially consists of inorganic material and is substantially free from interruptions beneath the wire-bonding region (23) of the bond pads (3). The bond pads (3) and the layer (20) of passivating material have thicknesses that jointly counteract the occurrence of damage to the active circuit (4) during bonding of the wire (24) to the wire-bonding region (23).
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3.POWER SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND BONDING WIRE 审中-公开
标题翻译: LEISTUNGSHALBLEITERVORRICHTUNG,HERSTELLUNGSVERFAHRENDAFÜRUND BONDDRAHT公开(公告)号:EP2822029A1
公开(公告)日:2015-01-07
申请号:EP13754800.4
申请日:2013-02-22
发明人: TATSUMI, Kohei , YAMADA, Takashi , ODA, Daizo
IPC分类号: H01L21/60 , H01L21/607
CPC分类号: H01L24/05 , H01L24/03 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/03444 , H01L2224/0345 , H01L2224/0346 , H01L2224/04042 , H01L2224/05007 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05172 , H01L2224/05184 , H01L2224/05618 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05672 , H01L2224/05684 , H01L2224/32245 , H01L2224/43 , H01L2224/4312 , H01L2224/43125 , H01L2224/4321 , H01L2224/43848 , H01L2224/43986 , H01L2224/45005 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45611 , H01L2224/45618 , H01L2224/45624 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45655 , H01L2224/45664 , H01L2224/45666 , H01L2224/45669 , H01L2224/45671 , H01L2224/45672 , H01L2224/45684 , H01L2224/45686 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48247 , H01L2224/48463 , H01L2224/48472 , H01L2224/48818 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/48866 , H01L2224/48869 , H01L2224/48871 , H01L2224/48872 , H01L2224/48884 , H01L2224/73265 , H01L2224/78313 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/8592 , H01L2924/00011 , H01L2924/00014 , H01L2924/01047 , H01L2924/10253 , H01L2924/10272 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/20103 , H01L2924/351 , H01L2924/00015 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/00012 , H01L2924/00 , H01L2924/01079 , H01L2924/01046 , H01L2924/013 , H01L2924/00013 , H01L2924/01202 , H01L2924/20107 , H01L2924/20106 , H01L2224/29099 , H01L2924/01023 , H01L2924/01074 , H01L2924/01049
摘要: A power semiconductor device, operable regardless of thermal stress generation, which reduces heat generation from a wire, and secures the reliability of a bonding portion when the device is used for dealing with a large amount of current and/or under a high temperature atmosphere, a method of manufacturing the device and a bonding wire. The power semiconductor device comprises a metal electrode on a power semiconductor die and another metal electrode connected by a metal wire using a wedge bonding connection, wherein the metal wire is Ag or a Ag alloy wire having a diameter greater than 50µm and not greater than 2mm, and the metal electrode has thereon one or more metals and/or alloy layers, each of the layers being 50Å or more in thickness, wherein the metal for the layer is selected from Ni, Cr, Cu, Pd, V, Ti, Pt, Zn, Ag, Au, W and Al.
摘要翻译: 一种功率半导体器件,其可以在不受热应力产生的情况下操作,这降低了线的发热,并且当该器件用于处理大量电流和/或在高温气氛下时,确保了接合部的可靠性, 制造该装置的方法和接合线。 功率半导体器件包括功率半导体管芯上的金属电极和使用楔形接合连接的金属线连接的另一金属电极,其中金属线为Ag或直径大于50μm且不大于2mm的Ag合金线 金属电极上具有一个或多个金属和/或合金层,每个层的厚度均为50埃以上,其中该层的金属选自Ni,Cr,Cu,Pd,V,Ti,Pt ,Zn,Ag,Au,W和Al。
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4.METAL-BASE CIRCUIT BOARD AND ITS MANUFACTURING METHOD 有权
标题翻译: METALLBASIS-LEITERPLATTE UND HERSTELLUNGSVERFAHRENDAFÜR公开(公告)号:EP1615267A4
公开(公告)日:2010-02-10
申请号:EP04727676
申请日:2004-04-15
IPC分类号: H01L23/12 , H01L21/48 , H01L23/14 , H01L23/373 , H01L23/498 , H01L23/66 , H01L25/04 , H01L25/16 , H05K1/02 , H05K1/05 , H05K3/00 , H05K3/44
CPC分类号: H01L23/66 , H01L21/4857 , H01L23/142 , H01L23/3735 , H01L23/3736 , H01L23/49822 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/16 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/0566 , H01L2224/05666 , H01L2224/45111 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/4516 , H01L2224/45166 , H01L2224/48091 , H01L2224/48227 , H01L2224/48237 , H01L2224/48472 , H01L2224/48611 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48666 , H01L2224/48711 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48755 , H01L2224/48766 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/4886 , H01L2224/48866 , H01L2224/4911 , H01L2224/85411 , H01L2224/85424 , H01L2224/85439 , H01L2224/85455 , H01L2224/8546 , H01L2224/85466 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01061 , H01L2924/01063 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/13091 , H01L2924/14 , H01L2924/19043 , H01L2924/19051 , H01L2924/30105 , H05K1/0224 , H05K1/024 , H05K1/025 , H05K3/0061 , H05K2201/0187 , H05K2201/0209 , H05K2201/09745 , H01L2924/00014 , H01L2924/00 , H01L2224/48811 , H01L2224/48824 , H01L2224/48744 , H01L2224/4876 , H01L2224/4866
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5.POWER SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND BONDING WIRE 审中-公开
标题翻译: 功率半导体器件和工艺用于生产焊线公开(公告)号:EP2822029A4
公开(公告)日:2015-12-23
申请号:EP13754800
申请日:2013-02-22
发明人: TATSUMI KOHEI , YAMADA TAKASHI , ODA DAIZO
IPC分类号: H01L23/49 , H01L21/607 , H01L23/485
CPC分类号: H01L24/05 , H01L24/03 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/03444 , H01L2224/0345 , H01L2224/0346 , H01L2224/04042 , H01L2224/05007 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05172 , H01L2224/05184 , H01L2224/05618 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05672 , H01L2224/05684 , H01L2224/32245 , H01L2224/43 , H01L2224/4312 , H01L2224/43125 , H01L2224/4321 , H01L2224/43848 , H01L2224/43986 , H01L2224/45005 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45611 , H01L2224/45618 , H01L2224/45624 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45655 , H01L2224/45664 , H01L2224/45666 , H01L2224/45669 , H01L2224/45671 , H01L2224/45672 , H01L2224/45684 , H01L2224/45686 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48247 , H01L2224/48463 , H01L2224/48472 , H01L2224/48818 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/48866 , H01L2224/48869 , H01L2224/48871 , H01L2224/48872 , H01L2224/48884 , H01L2224/73265 , H01L2224/78313 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/8592 , H01L2924/00011 , H01L2924/00014 , H01L2924/01047 , H01L2924/10253 , H01L2924/10272 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/20103 , H01L2924/351 , H01L2924/00015 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/00012 , H01L2924/00 , H01L2924/01079 , H01L2924/01046 , H01L2924/013 , H01L2924/00013 , H01L2924/01202 , H01L2924/20107 , H01L2924/20106 , H01L2224/29099 , H01L2924/01023 , H01L2924/01074 , H01L2924/01049
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公开(公告)号:EP1615267A1
公开(公告)日:2006-01-11
申请号:EP04727676.1
申请日:2004-04-15
发明人: YONEMURA, Naomi, c/o Denki Kagaku Kogyo KK , YASHIMA, Katunori, c/o Denki Kagaku Kogyo KK , TSUJIMURA, Yoshihiko, c/o Denki Kagaku Kogyo KK , ISHIKURA, Hidenori, c/o Denki Kagaku Kogyo KK , SAIKI, Takashi, c/o Denki Kagaku Kogyo KK
CPC分类号: H01L23/66 , H01L21/4857 , H01L23/142 , H01L23/3735 , H01L23/3736 , H01L23/49822 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/16 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/0566 , H01L2224/05666 , H01L2224/45111 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/4516 , H01L2224/45166 , H01L2224/48091 , H01L2224/48227 , H01L2224/48237 , H01L2224/48472 , H01L2224/48611 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48666 , H01L2224/48711 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48755 , H01L2224/48766 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/4886 , H01L2224/48866 , H01L2224/4911 , H01L2224/85411 , H01L2224/85424 , H01L2224/85439 , H01L2224/85455 , H01L2224/8546 , H01L2224/85466 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01061 , H01L2924/01063 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/13091 , H01L2924/14 , H01L2924/19043 , H01L2924/19051 , H01L2924/30105 , H05K1/0224 , H05K1/024 , H05K1/025 , H05K3/0061 , H05K2201/0187 , H05K2201/0209 , H05K2201/09745 , H01L2924/00014 , H01L2924/00 , H01L2224/48811 , H01L2224/48824 , H01L2224/48744 , H01L2224/4876 , H01L2224/4866
摘要: To provide a metal base circuit board excellent in heat dissipation properties, which remarkably reduces malfunction time of a semiconductor which occurs when a hybrid integrated circuit is operated at a high frequency.
A metal base circuit board to be use for a hybrid integrated circuit, comprising circuits provided on a metal plate via an insulating layer (A, B), a power semiconductor mounted on the circuit and a control semiconductor to control the power semiconductor, provided on the circuit, wherein a low capacitance portion is embedded under a circuit portion (pad portion) on which the control semiconductor is mounted, preferably, the low capacitance portion is made of a resin containing an inorganic filler and has a dielectric constant of from 2 to 9.摘要翻译: 提供一种金属基底电路板具有优异的散热性,从而降低了其中当混合集成电路以高频率操作的发生半导体的显着故障时间。 的金属基底电路板是使用用于混合集成电路,在绝缘层,其包括通过提供在金属板上的电路(A,B),功率半导体安装在所述电路和控制半导体控制功率半导体,设置在上 的电路中,worin低电容部分嵌入的电路部分在其上的控制半导体安装,优选地,低电容部分由含无机填料的树脂的,并且具有2至的介电常数(焊盘部)下 9日
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7.HYBRID INTEGRATED CIRCUIT COMPRISING A METAL-BASE CIRCUIT BOARD AND ITS MANUFACTURING METHOD 有权
标题翻译: 混合集成电路,包括金属基电路板及其制造方法公开(公告)号:EP1615267B1
公开(公告)日:2016-01-13
申请号:EP04727676.1
申请日:2004-04-15
发明人: YONEMURA, Naomi , YASHIMA, Katunori , TSUJIMURA, Yoshihiko , ISHIKURA, Hidenori , SAIKI, Takashi
IPC分类号: H01L23/66 , H01L25/04 , H01L23/12 , H05K1/05 , H05K3/44 , H01L23/14 , H01L25/16 , H01L23/373 , H01L23/498 , H05K1/02 , H01L21/48 , H05K3/00
CPC分类号: H01L23/66 , H01L21/4857 , H01L23/142 , H01L23/3735 , H01L23/3736 , H01L23/49822 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/16 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/0566 , H01L2224/05666 , H01L2224/45111 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/4516 , H01L2224/45166 , H01L2224/48091 , H01L2224/48227 , H01L2224/48237 , H01L2224/48472 , H01L2224/48611 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48666 , H01L2224/48711 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48755 , H01L2224/48766 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/4886 , H01L2224/48866 , H01L2224/4911 , H01L2224/85411 , H01L2224/85424 , H01L2224/85439 , H01L2224/85455 , H01L2224/8546 , H01L2224/85466 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01061 , H01L2924/01063 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/13091 , H01L2924/14 , H01L2924/19043 , H01L2924/19051 , H01L2924/30105 , H05K1/0224 , H05K1/024 , H05K1/025 , H05K3/0061 , H05K2201/0187 , H05K2201/0209 , H05K2201/09745 , H01L2924/00014 , H01L2924/00 , H01L2224/48811 , H01L2224/48824 , H01L2224/48744 , H01L2224/4876 , H01L2224/4866
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8.SOLDER BUMP INTERCONNECT FOR IMPROVED MECHANICAL AND THERMO MECHANICAL PERFORMANCE 审中-公开
标题翻译: 焊料凸点改进机器和热机械动力公开(公告)号:EP2140484A4
公开(公告)日:2011-11-16
申请号:EP08746580
申请日:2008-04-22
发明人: ALVARADO REYNANTE , LU YUAN , REDBURN RICHARD
IPC分类号: H01L23/485
CPC分类号: H01L24/05 , H01L23/3171 , H01L23/3192 , H01L24/02 , H01L24/03 , H01L24/13 , H01L2224/0235 , H01L2224/0239 , H01L2224/0345 , H01L2224/0346 , H01L2224/0401 , H01L2224/04042 , H01L2224/05022 , H01L2224/05073 , H01L2224/05124 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05541 , H01L2224/05548 , H01L2224/05554 , H01L2224/05555 , H01L2224/05567 , H01L2224/05572 , H01L2224/0558 , H01L2224/05644 , H01L2224/05647 , H01L2224/05666 , H01L2224/1148 , H01L2224/13006 , H01L2224/13007 , H01L2224/13021 , H01L2224/13022 , H01L2224/131 , H01L2224/45144 , H01L2224/45147 , H01L2224/48644 , H01L2224/48647 , H01L2224/48666 , H01L2224/48844 , H01L2224/48847 , H01L2224/48866 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/10271 , H01L2924/10329 , H01L2924/12044 , H01L2924/14 , H01L2924/3011 , H01L2924/351 , H01L2924/00014 , H01L2924/00015 , H01L2224/13099 , H01L2924/00
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9.SOLDER BUMP INTERCONNECT FOR IMPROVED MECHANICAL AND THERMO MECHANICAL PERFORMANCE 审中-公开
标题翻译: 焊料凸点改进机器和热机械动力公开(公告)号:EP2140484A2
公开(公告)日:2010-01-06
申请号:EP08746580.3
申请日:2008-04-22
发明人: ALVARADO, Reynante , LU, Yuan , REDBURN, Richard
IPC分类号: H01L21/60
CPC分类号: H01L24/05 , H01L23/3171 , H01L23/3192 , H01L24/02 , H01L24/03 , H01L24/13 , H01L2224/0235 , H01L2224/0239 , H01L2224/0345 , H01L2224/0346 , H01L2224/0401 , H01L2224/04042 , H01L2224/05022 , H01L2224/05073 , H01L2224/05124 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05541 , H01L2224/05548 , H01L2224/05554 , H01L2224/05555 , H01L2224/05567 , H01L2224/05572 , H01L2224/0558 , H01L2224/05644 , H01L2224/05647 , H01L2224/05666 , H01L2224/1148 , H01L2224/13006 , H01L2224/13007 , H01L2224/13021 , H01L2224/13022 , H01L2224/131 , H01L2224/45144 , H01L2224/45147 , H01L2224/48644 , H01L2224/48647 , H01L2224/48666 , H01L2224/48844 , H01L2224/48847 , H01L2224/48866 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/10271 , H01L2924/10329 , H01L2924/12044 , H01L2924/14 , H01L2924/3011 , H01L2924/351 , H01L2924/00014 , H01L2924/00015 , H01L2224/13099 , H01L2924/00
摘要: An apparatus and method for a semiconductor package including a bump on input-output (IO) structure are disclosed involving a device pad, an under bump metai pad (UBM), a polymer, and a passivation layer. The shortest distance from the center of the device pad to its outer edge, and the shortest distance from the center of the UBM to its outer edge are in a ratio from 0.5:1 to 0.95:1. Also, the shortest distance from the center of the polymer to its outer edge, and the shortest distance from the center of the UBM to its outer edge are in a ratio from 0.35:1 to 0.85:1. Additionally, the shortest distance from the center of the passivation layer to its outer edge, and the shortest distance from the center of the UBM to its outer edge are in a ratio from 0.35:1 to 0.80:1.
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