HALBLEITERBAUELEMENT
    6.
    发明公开
    HALBLEITERBAUELEMENT 有权
    半导体组件及其制造方法半导体组件装置半导体组件

    公开(公告)号:EP1508168A1

    公开(公告)日:2005-02-23

    申请号:EP03704305.6

    申请日:2003-02-10

    申请人: ROBERT BOSCH GMBH

    摘要: The invention relates to a semiconductor component, which can be produced in a simple, rapid, but nevertheless reliable manner and can be used in particular for power applications. The component comprises: a semiconductor chip (2, 12); a lower first primary electrode layer (3, 13) configured on a first side (2a) of the semiconductor chip (2, 12); a lower control electrode layer (4, 14) configured on said first side (2a); an isolation layer (5, 15), which partially covers the lower first primary electrode layer (3, 13) and is configured on the first side (2a) between the lower first primary electrode layer (3, 13) and the lower control electrode layer (4, 14); an upper first primary electrode layer (6, 16) configured on the lower first primary electrode layer (3, 13); an upper control electrode layer (7, 17), which is configured on the lower control electrode layer (4, 14) and the isolation layer (5, 15), extending over the isolation layer (5, 15) partly above the lower first primary electrode layer (3, 13); and a second primary electrode layer (9, 19) that is configured on a second side (2b) of the semiconductor chip (2, 12).

    摘要翻译: 一种半导体元件那样能够被简单地制造,快速,并且还可靠地并且没有为功率应用中使用,并包括半导体芯片,低级,第一主电极形成于所述半导体芯片,一个下控制电极的第一侧层 层形成在所述第一侧上,以形成在所述下部第一主电极层和下控制电极层和部分地覆盖上部第一主电极层上的下侧的第一主电极层之间的第一侧绝缘层的所有其上所形成的 其上形成有下控制电极层和绝缘层上,并部分地在较低的第一主电极层上面的绝缘层上延伸下部第一主电极层到上控制电极层中的所有,以及形成在第二侧上的第二主电极层 的半导体芯片。