公开(公告)号：EP3018707B1

公开(公告)日：2018-04-11

申请号：EP15191412.4

申请日：2015-10-26

申请人： Renesas Electronics Corporation

发明人： AKIBA, Toshihiko ,  SHIGIHARA, Hiromi ,  YAJIMA, Kei

IPC分类号： H01L23/31 ,  H01L23/525 ,  H01L23/498 ,  H01L23/538 ,  H01L21/48

CPC分类号： H01L21/4889 ,  H01L21/4846 ,  H01L21/4853 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/525 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/19 ,  H01L24/20 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/11 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided is a semiconductor device with improved reliability that achieves the reduction in size. A semiconductor wafer is provided that has a first insulating member with an opening that exposes from which an upper surface of an electrode pad. Subsequently, after forming a second insulating member over a main surface of the semiconductor wafer, another opening is formed to expose the upper surface of the electrode pad. Then, a probe needle is brought into contact with the electrode pad, to write data in a memory circuit at the main surface of the semiconductor wafer. After covering the upper surface of the electrode pad with a conductive cover film, a relocation wiring is formed. In the Y direction, the width of the relocation wiring positioned directly above the electrode pad is equal to or smaller than the width of the opening formed in the first insulating member.

公开(公告)号：EP3018707A1

公开(公告)日：2016-05-11

申请号：EP15191412.4

申请日：2015-10-26

申请人： Renesas Electronics Corporation

发明人： AKIBA, Toshihiko ,  SHIGIHARA, Hiromi ,  YAJIMA, Kei

IPC分类号： H01L23/31 ,  H01L23/525

CPC分类号： H01L21/4889 ,  H01L21/4846 ,  H01L21/4853 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/525 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/19 ,  H01L24/20 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/11 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided is a semiconductor device with improved reliability that achieves the reduction in size. A semiconductor wafer is provided that has a first insulating member with an opening that exposes from which an upper surface of an electrode pad. Subsequently, after forming a second insulating member over a main surface of the semiconductor wafer, another opening is formed to expose the upper surface of the electrode pad. Then, a probe needle is brought into contact with the electrode pad, to write data in a memory circuit at the main surface of the semiconductor wafer. After covering the upper surface of the electrode pad with a conductive cover film, a relocation wiring is formed. In the Y direction, the width of the relocation wiring positioned directly above the electrode pad is equal to or smaller than the width of the opening formed in the first insulating member.

摘要翻译： 提供了一种具有改进的可靠性的半导体器件，其实现了尺寸的减小。 提供了一种半导体晶片，其具有第一绝缘构件，该第一绝缘构件具有暴露电极焊盘的上表面的开口。 随后，在半导体晶片的主表面上形成第二绝缘构件之后，形成另一开口以暴露电极焊盘的上表面。 然后，使探针与电极焊盘接触，将数据写入半导体晶片主表面上的存储电路中。 在用导电覆盖膜覆盖电极焊盘的上表面之后，形成重配置布线。 在Y方向上，位于电极焊盘正上方的重配置布线的宽度等于或小于形成在第一绝缘构件中的开口的宽度。

公开(公告)号：EP4002444A1

公开(公告)日：2022-05-25

申请号：EP21207108.8

申请日：2021-11-09

申请人： Renesas Electronics Corporation

发明人： AKIBA, Toshihiko ,  TANUMA, Yusuke

IPC分类号： H01L23/367 ,  H01L23/373 ,  H01L23/42

摘要： A semiconductor device includes: a wiring substrate; a semiconductor chip mounted on the wiring substrate; a heat release sheet arranged on the semiconductor chip to cover the entire semiconductor chip and having a larger area than an area of the semiconductor chip; and a cover member which covers the semiconductor chip and the heat release sheet and to which the heat release sheet is fixed. The cover member has a first portion facing the semiconductor chip, a flange portion arranged in a periphery of the first portion and bonded and fixed onto the wiring substrate, and a second portion arranged between the first portion and the flange portion. In a plan view of the cover member viewed from the heat release sheet, the heat release sheet is bonded/fixed to the cover member through a bonding member partially arranged between the heat release sheet and the cover member.

公开(公告)号：EP3389089A1

公开(公告)日：2018-10-17

申请号：EP18165717.2

申请日：2018-04-04

申请人： Renesas Electronics Corporation

发明人： SAKATA, Kenji ,  AKIBA, Toshihiko ,  FUNAYA, Takuo ,  TSUCHIYA, Hideaki ,  YOSHIDA, Yuichi

IPC分类号： H01L23/485 ,  H01L21/60

CPC分类号： H01L24/13 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3192 ,  H01L23/49811 ,  H01L23/49816 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/02206 ,  H01L2224/02215 ,  H01L2224/0345 ,  H01L2224/0362 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05014 ,  H01L2224/05022 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05555 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/05647 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13005 ,  H01L2224/13014 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14131 ,  H01L2224/14133 ,  H01L2224/1601 ,  H01L2224/16013 ,  H01L2224/16058 ,  H01L2224/16112 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/1713 ,  H01L2224/73204 ,  H01L2224/81048 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/814 ,  H01L2224/81455 ,  H01L2224/81815 ,  H01L2224/8191 ,  H01L2224/83192 ,  H01L2224/83862 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/3512 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/0103 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2924/206 ,  H01L2924/207 ,  H01L2924/04941 ,  H01L2224/1146 ,  H01L2224/47

摘要： There is a need to improve reliability of the semiconductor device.
A semiconductor device includes a printed circuit board and a semiconductor chip mounted over the printed circuit board. The semiconductor chip includes a pad, an insulation film including an opening to expose part of the pad, and a pillar electrode formed over the pad exposed from the opening. The printed circuit board includes a terminal and a resist layer including an opening to expose part of the terminal. The pillar electrode of the semiconductor chip and the terminal of the printed circuit board are coupled via a solder layer. Thickness h 1 of the pillar electrode is measured from the upper surface of the insulation film. Thickness h 2 of the solder layer is measured from the upper surface of the resist layer. Thickness h 1 is greater than or equal to a half of thickness h 2 and is smaller than or equal to thickness h 2 .