公开(公告)号：EP1854617A4

公开(公告)日：2011-07-06

申请号：EP06714156

申请日：2006-02-21

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： YORITA JUN ,  MIKAGE KATSUNARI

IPC: B29C59/02 ,  B29C43/04 ,  B29C43/52 ,  B81C99/00

CPC classification number: B81C1/0046 ,  B29C33/02 ,  B29C33/306 ,  B29C35/02 ,  B29C35/16 ,  B29C43/021 ,  B29C43/04 ,  B29C43/52 ,  B29C59/02 ,  B29C2043/025 ,  B29C2043/046 ,  B29C2059/023 ,  B81B2201/058

Abstract: In a processing method of a fine structure according to the present invention, an opposed platen (211) is moved from a retreat position to a molding/processing position, so that a film (1) is pressed against a mold (5) and processed. Thereafter a second block (211b) is separated from a first block (211a). Thus, improvement of the cooling rate for the opposed platen (211) can be attained by reducing the total thermal capacity of the opposed platen (211) by reducing the volume of the opposed platen (211) in cooling and physically discharging heat stored in the opposed platen (211). Thus, cooling efficiency for the opposed platen (211) is improved, and the heat cycle of the opposed platen (211) can be reduced.

公开(公告)号：EP1489695A4

公开(公告)日：2005-05-04

申请号：EP03743552

申请日：2003-03-03

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： KASHIHARA HIDEKI ,  YAMAMOTO MASAMICHI ,  YORITA JUN ,  TOSHIOKA HIDEAKI ,  OSOEGAWA MISAKO ,  KOYAMA KEIJI ,  MAJIMA MASATOSHI ,  TANI YOSHIE

IPC: G01R1/067 ,  G01R1/073 ,  G01R3/00 ,  H01R4/04 ,  H01R43/00 ,  H05K3/32 ,  H01R11/01 ,  H01B5/16 ,  H01B13/00

CPC classification number: H01R4/04 ,  G01R1/06755 ,  G01R1/073 ,  G01R3/00 ,  H01R43/007 ,  Y10T428/25 ,  Y10T428/258 ,  Y10T428/31678

Abstract: An anisotropic conductive film, and its production method, especially suitable for packaging a semiconductor and sufficiently satisfying the requirements of higher density packaging because short circuit does not occur in the plane direction of the film even if the pitch of electrodes is small, or suitable for packaging a contact probe because conductive connection not fused with a high current can be ensured with a lower voltage and even a high frequency signal can be dealt with. The anisotropic conductive film contains metallic powder having such a shape that many fine metal particles are chained as a conductive component, wherein the length of the chain of metallic powder is set not longer than the distance between adjacent electrodes being bonded conductively when a semiconductor is packaged, and the diameter of the chain is set in the range of 1mum-20mum when a contact probe is packaged. At least a part of the film is formed while orienting a chain formed of a paramagnetic metal with a magnetic field.

公开(公告)号：EP1426978A4

公开(公告)日：2008-09-10

申请号：EP02765342

申请日：2002-08-21

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： YORITA JUN ,  INAZAWA SHINJI ,  MAJIMA MASATOSHI ,  KASHIHARA HIDEKI ,  SAKAMOTO TOSHIHIRO ,  TOSHIOKA HIDEAKI

IPC: C25D1/08 ,  C25D1/10 ,  C25D5/00 ,  C25D5/02 ,  H01L21/283 ,  H01L21/288 ,  H05K3/20 ,  H05K3/32 ,  H01B1/22 ,  C25D7/00 ,  H01B5/00 ,  H01B5/16

CPC classification number: H05K3/205 ,  C25D1/08 ,  C25D1/10 ,  C25D5/022 ,  H01L21/283 ,  H01L21/2885 ,  H05K3/202 ,  H05K3/323 ,  H05K2201/035

Abstract: A conductive paste capable of further reducing the electrical resistance of a conductive film or the like, a conductive film having an anisotropic conductivity, a plating method for forming a plated coating having a uniform crystal structure, and a method of producing a fine metal component having good characteristics. A conductive paste is such that metal powder in the form of many fine metal particles being linked in a chain form is blended. A conductive film is such that chain-form metal powder having paramagnetism is oriented in a constant direction by applying a magnetic field to a coating formed by the application of conductive paste. A plating method grows a plated coating by electroplating on a conductive film formed from a conductive paste. A method of producing a fine metal component which selectively grows a plated coating (4’) on a conductive film (1) exposed at fine pass-hole pattern portions in a mold (3) to produce a fine metal component.

公开(公告)号：EP1440931A4

公开(公告)日：2008-03-26

申请号：EP02777967

申请日：2002-10-25

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： YORITA JUN ,  HIRATA YOSHIHIRO ,  HAGA TSUYOSHI

IPC: B81C1/00 ,  C25D1/00 ,  H01L21/48 ,  H05K3/20

CPC classification number: B81C99/0085 ,  B81C2201/032 ,  C25D1/003 ,  H01L21/4821 ,  H05K3/202 ,  H05K3/205

Abstract: A method for manufacturing a metal microstructure 1 comprising a resin mold 13. For setting a mild manufacturing condition with little damage of the resin mold 13, and for mass-producing a high- precision metal microstructure 1 by uniform casting, this method is characterized by having the step of forming a resin mold laminate by fixing on a conductive substrate 11 a resin mold 13 having a vacancy penetrating in the thickness direction via a photosensitive polymer 12 the chemical composition of which is varied by an electron ray, ultraviolet ray, or a visible ray, the step of exposing the resin type laminate 2 to the electron ray, ultraviolet ray, or visible ray, the step of removing a photosensitized polymer 12c present in the vacancy of the resin mold 13, and the step of filling the vacant section of the resin type laminate 2 with a metal 14 by casting.

Abstract translation: 用于制造包括树脂模具13的金属微结构1的方法。为了设定温和的制造条件而对树脂模具13损坏很小，并且为了通过均匀铸造来批量生产高精度金属微结构1，该方法的特征在于： 具有通过在导电性基体11上固定经由感光性聚合物12而具有在厚度方向上贯通的空隙的树脂模具13来形成树脂模制层叠体的工序，该感光性聚合物12的化学组成根据电子射线，紫外线或 可见光，将树脂型层压体2暴露于电子射线，紫外线或可见光线的步骤，去除存在于树脂模具13的空隙中的光敏聚合物12c的步骤，以及填充空白部分 通过铸造将树脂型层叠体2与金属14接合。

公开(公告)号：EP1365250A4

公开(公告)日：2005-07-27

申请号：EP02715876

申请日：2002-01-22

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： HIRATA YOSHIHIRO ,  HAGA TSUYOSHI ,  NUMAZAWA TOSHIYUKI ,  NAKAMAE KAZUO ,  OKADA KAZUNORI ,  YORITA JUN

IPC: G01R1/067 ,  G01R3/00 ,  G01R15/24 ,  H01L21/66

CPC classification number: G01R1/06733 ,  G01R1/06738 ,  G01R1/06755 ,  G01R3/00 ,  Y10T29/49117 ,  Y10T29/49204

Abstract: A method of manufacturing a contact probe, comprising an electroforming process for forming a metal layer (526) by performing an electroforming so as to fill clearances in a resist film (522) by using the resist film (522)as a pattern frame having a shape matching the contact probe disposed on a substrate (521), a tip working process for sharpening the area of the metal layer (526) forming the tip end part of the contact probe by diagonally cutting out the area, and a retrieval process for retrieving only the metal layer (526) from the pattern frame.