公开(公告)号：EP3249952A1

公开(公告)日：2017-11-29

申请号：EP15894016.3

申请日：2015-12-14

Applicant: Goertek Inc.

Inventor： SUN, Yanmei

IPC: H04R19/04

CPC classification number: B81B7/02 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00158 ,  B81C2201/0105 ,  B81C2201/013 ,  G01L7/08 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003

Abstract: The present invention discloses a manufacturing method of an integrated structure of a MEMS microphone and a pressure sensor, which comprises the following steps: depositing an insulating layer, a first polycrystalline silicon layer, a sacrificial layer and a second polycrystalline silicon layer in sequence on a shared substrate; etching the second polycrystalline silicon layer to form a vibrating diaphragm and an upper electrode; eroding the sacrificial layer to form a containing cavity of a microphone and a pressure sensor, and etching the sacrificial layer between the microphone and the pressure sensor; etching the first polycrystalline silicon layer to form a back electrode of the microphone and a lower electrode of the pressure sensor; etching a position of the shared substrate below a back electrode of the microphone to form a back cavity; and etching away the region of the insulating layer below the back electrode. A capacitance structure of a MEMS microphone and that of a pressure sensor are integrated on a shared substrate, improving integration of a MEMS microphone and a pressure sensor, and greatly reducing a size of a whole packaging structure; in addition, a microphone and a pressure sensor can be simultaneously manufactured on a shared substrate to improve the efficiency of production.

Abstract translation: 本发明公开了一种MEMS麦克风与压力传感器集成结构的制作方法，包括以下步骤：依次在绝缘层，第一多晶硅层，牺牲层和第二多晶硅层上依次沉积 共享基板; 蚀刻第二多晶硅层以形成振动膜片和上电极; 侵蚀牺牲层以形成麦克风和压力传感器的容纳腔，以及刻蚀麦克风和压力传感器之间的牺牲层; 刻蚀第一多晶硅层以形成麦克风的背电极和压力传感器的下电极; 蚀刻麦克风的背电极下面的共享基板的位置以形成后腔; 并且蚀刻掉背电极下方的绝缘层的区域。 MEMS麦克风和压力传感器的电容结构集成在共用基板上，提高了MEMS麦克风和压力传感器的集成度，大大减小了整个封装结构的体积; 另外，麦克风和压力传感器可以同时制造在共享的基板上以提高生产效率。

公开(公告)号：EP3074800A4

公开(公告)日：2017-07-12

申请号：EP14866509

申请日：2014-11-25

Applicant: INPHENIX INC

Inventor： KAMAL MOHAMMAD ,  LI TONGNING ,  EU DAVID ,  QI QINIAN

IPC: H01S3/106 ,  G02B26/00

CPC classification number: G02B26/001 ,  B81C1/00317 ,  B81C2201/013 ,  G02B1/11 ,  G02B1/12 ,  H01L33/46 ,  H01L39/2467 ,  H01L2924/1461 ,  H01S3/08027 ,  H01S3/083 ,  H01S3/105 ,  H01S3/1062 ,  H01S5/141 ,  H01S5/18366

Abstract: A wavelength tunable gain medium with the use of micro-electromechanical system (MEMS) based Fabry-Perot (FP) filter cavity tuning is provided as a tunable laser. The system comprises a laser cavity and a filter cavity for wavelength selection. The laser cavity consists of a gain medium such as a Semiconductor Optical Amplifier (SOA), two collimating lenses and an end reflector. The MEMS-FP filter cavity comprises a fixed reflector and a moveable reflector, controllable by electrostatic force. By moving the MEMS reflector, the wavelength can be tuned by changing the FP filter cavity length. The MEMS FP filter cavity displacement can be tuned discretely with a step voltage, or continuously by using a continuous driving voltage. The driving frequency for continuous tuning can be a resonance frequency or any other frequency of the MEMS structure, and the tuning range can cover different tuning ranges such as 30 nm, 40 nm, and more than 100 nm.

Abstract translation: 使用基于微机电系统（MEMS）的法布里 - 珀罗（FP）滤波器腔调谐的波长可调增益介质被提供为可调谐激光器。 该系统包括激光腔和用于波长选择的滤波腔。 激光腔由增益介质组成，如半导体光放大器（SOA），两个准直透镜和一个端面反射器。 MEMS-FP滤波器腔包括固定反射器和可移动反射器，可通过静电力控制。 通过移动MEMS反射器，可以通过改变FP滤波器腔长来调整波长。 MEMS FP滤波器的腔体位移可以用阶跃电压离散调节，或者通过使用连续驱动电压连续调节。 用于连续调谐的驱动频率可以是MEMS结构的谐振频率或任何其它频率，并且调谐范围可以覆盖诸如30nm，40nm和大于100nm的不同调谐范围。

公开(公告)号：EP3154898A1

公开(公告)日：2017-04-19

申请号：EP14730169.1

申请日：2014-06-16

Applicant: Epcos AG ,  Commissariat à l'Energie Atomique et aux Energies Alternatives

Inventor： HENN, Gudrun ,  GIESEN, Marcel ,  DEN DEKKER, Arnoldus ,  PORNIN, Jean-Louis ,  SAINT-PATRICE, Damien ,  REIG, Bruno

IPC: B81C1/00

CPC classification number: B81C1/00293 ,  B81B7/0041 ,  B81B2203/0315 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0176 ,  B81C2203/0136 ,  B81C2203/0145

Abstract: The present invention concerns a microelectronic package (1) comprising a microelectronic structure (2) having at least a first opening (3) and defining a first cavity (4), a capping layer (9) having at least a second opening (10) and defining a second cavity (11) which is connected to the first cavity (4), wherein the capping layer (9) is arranged over the microelectronic structure (2) such that the second opening (10) is arranged over the first opening (3), and a sealing layer (13) covering the second opening (10), thereby sealing the first cavity (4) and the second cavity (11). Moreover, the present invention concerns a method of manufacturing the microelectronic package (1).

Abstract translation: 本发明涉及包括具有至少第一开口（3）并限定第一空腔（4）的微电子结构（2）的微电子封装（1），具有至少第二开口（10）的封盖层（9） 并且限定连接到所述第一腔体（4）的第二空腔（11），其中所述覆盖层（9）布置在所述微电子结构（2）上方，使得所述第二开口（10）布置在所述第一开口 3）和覆盖第二开口（10）的密封层（13），从而密封第一腔（4）和第二腔（11）。 此外，本发明涉及一种制造微电子封装（1）的方法。

公开(公告)号：EP2989433A1

公开(公告)日：2016-03-02

申请号：EP14756695.4

申请日：2014-02-27

Applicant: Texas Instruments Incorporated

Inventor： WYGANT, Ira, Oaktree ,  JOHNSON, Peter, B.

IPC: G01L9/04

CPC classification number: G01P15/125 ,  B81B7/007 ,  B81B2201/0271 ,  B81B2203/0127 ,  B81B2207/096 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/036 ,  H02N1/006 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2468 ,  H03H9/2489 ,  H04R19/005 ,  Y10T29/49165

Abstract: A packaged capacitive MEMS sensor device 100 includes at least one capacitive MEMS sensor element with at least one capacitive MEMS sensor cell 100a including a first substrate 101 having a thick 106 and a thin 107 dielectric region. A second substrate with a membrane layer 120 is bonded to the thick dielectric region and over the thin dielectric region to provide a MEMS cavity 114. The membrane layer provides a fixed electrode 120a and a released MEMS electrode 120b over the MEMS cavity. A first through-substrate via (TSV) 111 extends through a top side of the MEMS electrode and a second TSV 112 through a top side of the fixedelectrode. A metal cap 132 is on top of the first TSV and second TSV. A third substrate 140 including an inner cavity 144 and outer protruding portions 146 framing the inner cavity is bonded to the thick dielectric regions. The third substrate together with the first substrate seals the MEMS electrode.

公开(公告)号：EP2924724A1

公开(公告)日：2015-09-30

申请号：EP15159723.4

申请日：2015-03-18

Applicant: Honeywell International Inc. ,  Cornell University

Inventor： Tin, Steven ,  Kriz, Jeffrey James ,  Eickhoff, Steven J. ,  Ridley, Jeff A. ,  Lal, Amit ,  Ober, Christopher ,  Ardanuc, Serhan ,  Gund, Ved ,  Ruyack, Alex ,  Camera, Katherine

IPC: H01L23/00 ,  F41H13/00

CPC classification number: H01L23/564 ,  B29C35/02 ,  B29L2031/34 ,  B81B7/0077 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00333 ,  B81C2201/013 ,  C23C16/26 ,  C23C16/44 ,  H01L21/02118 ,  H01L21/268 ,  H01L21/30604 ,  H01L21/31133 ,  H01L21/76837 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/57 ,  H01L23/573 ,  H01L23/576 ,  H01L23/58 ,  H01L25/16 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/14 ,  H01M8/2475 ,  H01L2924/00

Abstract: Embodiments herein provide for a self-destructing chip including at least a first die and a second die. The first die includes an electronic circuit, and the second die is composed of one or more polymers that disintegrates at a first temperature. The second die defines a plurality of chambers, wherein a first subset of the chambers contain a material that reacts with oxygen in an exothermic manner. A second subset of the chambers contain an etchant to etch materials of the first die. In response to a trigger event, the electronic circuit is configured to expose the material in the first subset of chambers to oxygen in order to heat the second die to at least the first temperature, and is configured to release the etchant from the second subset of the chambers to etch the first die.

Abstract translation: 本文的实施例提供了包括至少第一模具和第二模具的自毁芯片。 第一管芯包括电子电路，第二管芯由在一个第一温度下分解的一种或多种聚合物构成。 第二模具限定多个室，其中室的第一子集含有以放热方式与氧反应的材料。 腔室的第二子集包含腐蚀剂以蚀刻第一管芯的材料。 响应于触发事件，电子电路被配置为将室的第一子集中的材料暴露于氧气，以便将第二管芯加热至少第一温度，并且被配置为从第二子集的第二子集释放蚀刻剂 这些室蚀刻第一个模具。

公开(公告)号：EP3253708A4

公开(公告)日：2018-08-01

申请号：EP16746948

申请日：2016-01-15

Applicant: MKS INSTR INC

Inventor： GU LEI ,  BART STEPHEN F

IPC: B81B7/02 ,  B81B7/04 ,  B81C1/00 ,  B81C3/00 ,  G01K13/00 ,  G01L19/00 ,  G01P15/00

CPC classification number: B81B7/0048 ,  B81B2201/0264 ,  B81C1/00325 ,  B81C1/00547 ,  B81C2201/013 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: Stress relief structures and methods that can be applied to MEMS sensors requiring a hermetic seal and that can be simply manufactured are disclosed. The system includes a sensor having a first surface and a second surface, the second surface being disposed away from the first surface, the second surface also being disposed away from a package surface and located between the first surface and the package surface, a number of support members, each support member extending from the second surface to the package surface, the support members being disposed on and operatively connected to only a portion of the second surface. The support member are configured to reduce stress produced by package-sensor interaction.

公开(公告)号：EP3176557B1

公开(公告)日：2018-07-11

申请号：EP16198301.0

申请日：2016-11-10

Applicant: Honeywell International Inc.

Inventor： BROWN, Gregory C.

IPC: G01L19/06 ,  G01L9/00

CPC classification number: B81B3/0051 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C2201/013 ,  B81C2201/0143 ,  B81C2203/0118 ,  G01L9/0047 ,  G01L9/0054 ,  G01L9/0055 ,  G01L19/0618

Abstract: A pressure sensor die assembly comprises a base substrate having a first surface, a stop structure on the first surface, and a diaphragm structure coupled to the first surface. The diaphragm structure comprises a first side with a cavity section including a first cavity and a second cavity surrounding the first cavity; a pressure sensing diaphragm portion having a first thickness and defined by the first cavity; and an over pressure diaphragm portion having a second thickness and defined by the second cavity, the second thickness greater than the first thickness. When an over pressure is applied, at least some area of the pressure sensing diaphragm portion is deflected and supported by the stop structure. As over pressure is increased, the over pressure diaphragm portion deflects and engages with the first surface such that additional area of the pressure sensing diaphragm portion is deflected and supported by the stop structure.

公开(公告)号：EP3214037A1

公开(公告)日：2017-09-06

申请号：EP15762910.6

申请日：2015-04-15

Applicant: BOE Technology Group Co., Ltd.

Inventor： JI, Chunyan ,  YANG, Tian

IPC: B81C1/00 ,  H01L41/00

CPC classification number: B81B3/0021 ,  B81B2203/0109 ,  B81B2203/0127 ,  B81C1/00142 ,  B81C1/00158 ,  B81C2201/013 ,  B81C2201/0176 ,  B81C2201/0181 ,  C23C14/0605 ,  C23C14/0617 ,  C23C14/14 ,  C23C14/34 ,  F24S25/30 ,  F24S25/636 ,  F24S2025/016 ,  F24S2025/801 ,  F24S2025/807 ,  G01F1/56 ,  G01J1/42 ,  H02S20/00 ,  Y02E10/47 ,  Y02E10/50

Abstract: The present invention relates to the field of sensor manufacturing technology, particularly disloses a method for manufacturing a micro-sensor body, compriseing the steps of S1: applying a wet colloidal material on a substrate to form a colloidal layer, and covering a layer of one-dimensional nanowire film on the surface of the colloidal layer to form a sensor embryo; S2: drying the colloidal layer of the sensor embryo to an extent that the colloidal layer cracks into a plurality of colloidal islands, a portion of the one-dimensional nanowire film contracting into a contraction diaphragm adhered to the surface of the colloidal islands while the other portion of the one-dimensional nanowire film being stretched into a connection structure connected between the adjacent contraction diaphragms. By the method for manufacturing a micro-sensor body of the present invention, the contraction diaphragms and connection structures formed by stretching the one-dimensional nanowire film are connected stably, which enhances the stability of the sensor devices; and the cracking manner renders it easy to obtain a large-scale of sensor bodies with connection structure arrays in stable suspension.

Abstract translation: 传感器制造技术领域本发明涉及传感器制造技术领域，特别涉及制造微传感器主体的方法，其包括以下步骤：S1：在基底上施加湿胶体材料以形成胶体层，并且覆盖一层 - 在胶体层的表面上形成三维纳米线膜以形成传感器胚胎; S2：将传感器胚胎的胶体层干燥至胶体层裂开成多个胶体岛的程度，一维纳米线膜的一部分收缩成粘附到胶体岛表面的收缩隔膜，而另一个 一维纳米线膜的一部分被拉伸成连接在相邻收缩隔膜之间的连接结构。 通过本发明的微传感器体的制造方法，通过拉伸一维纳米线膜形成的收缩隔膜和连接结构稳定连接，提高了传感器器件的稳定性; 开裂方式使得连接结构阵列在稳定悬浮状态下获得大规模的传感器主体变得容易。

公开(公告)号：EP2989433A4

公开(公告)日：2016-12-07

申请号：EP14756695

申请日：2014-02-27

Applicant: TEXAS INSTRUMENTS INC

Inventor： WYGANT IRA OAKTREE ,  JOHNSON PETER B

IPC: G01L9/04

CPC classification number: G01P15/125 ,  B81B7/007 ,  B81B2201/0271 ,  B81B2203/0127 ,  B81B2207/096 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/036 ,  H02N1/006 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2468 ,  H03H9/2489 ,  H04R19/005 ,  Y10T29/49165

公开(公告)号：EP3055249A1

公开(公告)日：2016-08-17

申请号：EP14787234.5

申请日：2014-10-02

Applicant: Centre National de la Recherche Scientifique ,  Universite de Nantes

Inventor： LETHIEN, Christophe ,  TILMANT, Pascal ,  EUSTACHE, Etienne ,  ROLLAND, Nathalie ,  BROUSSE, Thierry

IPC: B81C1/00

CPC classification number: H01M10/02 ,  B81B1/002 ,  B81B2203/0315 ,  B81B2203/0361 ,  B81C1/00047 ,  B81C1/00111 ,  B81C2201/0112 ,  B81C2201/013 ,  B81C2201/0159 ,  H01G11/70 ,  H01M6/40 ,  H01M10/0436 ,  H01M10/052 ,  H01M10/0585 ,  H01M2220/30

Abstract: The invention relates to a microstructured substrate comprising a plurality of at least one elementary microstructure (3), and to the method for producing said microstructured substrate. Said at least one elementary microstructure (3) has a long shape and opposing longitudinal lower (3a) and upper (3b) ends, the lower end (3a) being connected to the substrate, and also comprises an open cavity (5) on the upper end (3b) thereof, said microstructured substrate comprising alumina on the surface thereof. The invention also relates to an electrical storage device, more specifically an all-solid battery, comprising the microstructured substrate according to the invention.

Abstract translation: 微结构化衬底包括多个至少一个基本微结构。 电存储装置，特别是全固态电池可以包括微结构化基板。