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1.发明授权Method of depositing material containing Si or Ge on a Cu or Ni surface 失效一种用于Cu或Ni的表面上施加含Si或Ge材料的方法
公开(公告)号：EP0566901B1
公开(公告)日：1999-05-19
申请号：EP93105142.9
申请日：1993-03-29
IPC分类号： H01L23/485
CPC分类号： H01L23/53271 , C23C18/50 , C25D3/54 , H01L21/288 , H01L21/2885 , H01L21/6835 , H01L21/76838 , H01L23/4951 , H01L23/4985 , H01L23/49872 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/85 , H01L24/97 , H01L2224/02126 , H01L2224/0347 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/051 , H01L2224/05147 , H01L2224/05166 , H01L2224/05171 , H01L2224/05572 , H01L2224/05609 , H01L2224/05611 , H01L2224/05616 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/10126 , H01L2224/1145 , H01L2224/13022 , H01L2224/13101 , H01L2224/13105 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13118 , H01L2224/1312 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/2919 , H01L2224/3015 , H01L2224/32245 , H01L2224/45101 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/4847 , H01L2224/48609 , H01L2224/48611 , H01L2224/48616 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48709 , H01L2224/48711 , H01L2224/48716 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48809 , H01L2224/48811 , H01L2224/48816 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/73215 , H01L2224/85001 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2224/85214 , H01L2224/92147 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/0106 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01327 , H01L2924/014 , H01L2924/05042 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/12033 , H01L2924/12042 , H01L2924/14 , H01L2924/15747 , H01L2924/15787 , H01L2924/181 , H01L2924/30105 , H01L2924/3011 , Y10S428/901 , Y10T428/24917 , H01L2924/01048 , H01L2924/00 , H01L2924/00012 , H01L2224/48824 , H01L2224/05552 , H01L2224/05599
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2.发明公开METHODS FOR FORMING AN INTERMETALLIC REGION BETWEEN A SOLDER BUMP AND AN UNDER BUMP METALLURGY LAYER AND RELATED STRUCTURES 失效法之间形成LÖTHOCKERAND A UBM（BUMP冶金UNDER）层和相关结构的金属间层的
公开(公告)号：EP0950259A1
公开(公告)日：1999-10-20
申请号：EP97910019.0
申请日：1997-09-30
申请人： MCNC
发明人： MIS, Joseph, Daniel
CPC分类号： H01L24/12 , H01L24/11 , H01L2224/0231 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05171 , H01L2224/05575 , H01L2224/05611 , H01L2224/05616 , H01L2224/05644 , H01L2224/05647 , H01L2224/05671 , H01L2224/13008 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01049 , H01L2924/01057 , H01L2924/01061 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , Y10T428/1259 , H01L2924/00014 , H01L2924/013 , H01L2924/0105
摘要： Method for forming a solder bump (42) on a substrate (35) include the steps of forming an under bump metallurgy layer (36) on a substrate, forming a solder bump on the under bump metallurgy layer, and forming an intermetallic portion (33) of the under bump metallurgy layer adjacent the solder bump. In particular, the solder bump has a predetermined shape and this predetermined shape is retained while forming the intermetallic portion of the under bump metallurgy layer. This predetermined shape preferably has a flat surface opposite the substrate thus providing a uniform thickness of solder during the formation of the intermetallic portion. Related structures are also disclosed.
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3.发明公开Electronic devices having metallurgies containing copper-semiconductor compounds 失效具有包含铜 - 半导体化合物的冶金的电子器件
公开(公告)号：EP0566901A3
公开(公告)日：1994-01-26
申请号：EP93105142.9
申请日：1993-03-29
IPC分类号： H01L23/485
CPC分类号： H01L23/53271 , C23C18/50 , C25D3/54 , H01L21/288 , H01L21/2885 , H01L21/6835 , H01L21/76838 , H01L23/4951 , H01L23/4985 , H01L23/49872 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/85 , H01L24/97 , H01L2224/02126 , H01L2224/0347 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/051 , H01L2224/05147 , H01L2224/05166 , H01L2224/05171 , H01L2224/05572 , H01L2224/05609 , H01L2224/05611 , H01L2224/05616 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/10126 , H01L2224/1145 , H01L2224/13022 , H01L2224/13101 , H01L2224/13105 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13118 , H01L2224/1312 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/2919 , H01L2224/3015 , H01L2224/32245 , H01L2224/45101 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/4847 , H01L2224/48609 , H01L2224/48611 , H01L2224/48616 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48709 , H01L2224/48711 , H01L2224/48716 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48809 , H01L2224/48811 , H01L2224/48816 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/73215 , H01L2224/85001 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2224/85214 , H01L2224/92147 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/0106 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01327 , H01L2924/014 , H01L2924/05042 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/12033 , H01L2924/12042 , H01L2924/14 , H01L2924/15747 , H01L2924/15787 , H01L2924/181 , H01L2924/30105 , H01L2924/3011 , Y10S428/901 , Y10T428/24917 , H01L2924/01048 , H01L2924/00 , H01L2924/00012 , H01L2224/48824 , H01L2224/05552 , H01L2224/05599
摘要： Silicon and germanium containing materials (12) are used at surface of conductors (4) in electronic devices. Solder can be fluxlessly bonded and wires can be wire bonded to these surfaces. These material are used as a surface coating for lead frames for packaging integrated circuit chips. These materials can be decal transferred onto conductor surfaces or electrolessly or electrolytically disposed thereon.
摘要翻译： 硅和含锗材料（12）用于电子设备中导体（4）的表面。 焊料可以通过无焊剂粘接，并且可以将导线焊接到这些表面上。 这些材料被用作包装集成电路芯片的引线框架的表面涂层。 这些材料可以被印花转印到导体表面上或无电地或电解地设置在其上。
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4.发明公开Electronic devices having metallurgies containing copper-semiconductor compounds 失效Metallschichten mit Kupfer-Halbleiter-Verbindungenfürelektronische Anordnungen。
公开(公告)号：EP0566901A2
公开(公告)日：1993-10-27
申请号：EP93105142.9
申请日：1993-03-29
IPC分类号： H01L23/485
CPC分类号： H01L23/53271 , C23C18/50 , C25D3/54 , H01L21/288 , H01L21/2885 , H01L21/6835 , H01L21/76838 , H01L23/4951 , H01L23/4985 , H01L23/49872 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/85 , H01L24/97 , H01L2224/02126 , H01L2224/0347 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/051 , H01L2224/05147 , H01L2224/05166 , H01L2224/05171 , H01L2224/05572 , H01L2224/05609 , H01L2224/05611 , H01L2224/05616 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/10126 , H01L2224/1145 , H01L2224/13022 , H01L2224/13101 , H01L2224/13105 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13118 , H01L2224/1312 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/2919 , H01L2224/3015 , H01L2224/32245 , H01L2224/45101 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/4847 , H01L2224/48609 , H01L2224/48611 , H01L2224/48616 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48709 , H01L2224/48711 , H01L2224/48716 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48809 , H01L2224/48811 , H01L2224/48816 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/73215 , H01L2224/85001 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2224/85214 , H01L2224/92147 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/0106 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01327 , H01L2924/014 , H01L2924/05042 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/12033 , H01L2924/12042 , H01L2924/14 , H01L2924/15747 , H01L2924/15787 , H01L2924/181 , H01L2924/30105 , H01L2924/3011 , Y10S428/901 , Y10T428/24917 , H01L2924/01048 , H01L2924/00 , H01L2924/00012 , H01L2224/48824 , H01L2224/05552 , H01L2224/05599
摘要： Silicon and germanium containing materials (12) are used at surface of conductors (4) in electronic devices. Solder can be fluxlessly bonded and wires can be wire bonded to these surfaces. These material are used as a surface coating for lead frames for packaging integrated circuit chips. These materials can be decal transferred onto conductor surfaces or electrolessly or electrolytically disposed thereon.
摘要翻译： 含硅和锗的材料用于电子设备中导体的表面。 焊料可无焊接，电线可以与这些表面引线接合。 这些材料用作用于封装集成电路芯片的引线框架的表面涂层。 这些材料可以被贴花地转移到导体表面上，或者无电地或电解地设置在其上。
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