摘要:
A semiconductor chip (10) carrying integrated circuits has lead lines terminating in conductive terminal pads (12) connected to pedestals or bumps (20) extending up from them. Each of the pedestals includes a thin metallic adhesion layer (21) deposited on the pad. A thick metallic layer (22) of aluminum or an alloy of aluminum is deposited upon said thin metallic adhesion layer. The thick metallic layer forms the bulk of the height of the pedestal. An adhesion layer (23) composed of a thin film of titanium or chromium is deposited on the bump of aluminum . A barrier layer (24) composed of copper, nickel, platinum, palladium, or cobalt is deposited on the adhesion layer. A noble metal (25) consisting of gold, palladium, or platinum is deposited on the barrier layer. Other embodiments disclosed have a modified pedestal structure and/or a variation in the materials used.
摘要:
The present invention is a novel thin and flexible radio frequency (RF) tag that comprises a semiconductor circuit that has logic, memory, and radio frequency circuits, connected to an antenna with all interconnections placed on a single plane of wiring without crossovers. The elements of the package (substrate, antenna, and laminated covers) are flexible. The elements of the package are all thin. The tag is thin and flexible, enabling a unique range of applications including: RF ID tagging of credit cards, passports, admission tickets, and postage stamps.
摘要:
The present invention relates to novel compounds that exhibit unusually low electrical resistivity at room temperature. More specifically, it has been discovered that the incorporation of at least 1 to 15 atomic percent of gallium and/or at least 1 to 15 atomic percent gold into stoichiometric copper germanide (Cu₃Ge) compound results in a room temperature resistivity comparable to elemental copper, but with superior chemical and electronic stability upon exposure to air or oxygen at high temperatures. Furthermore, the compounds of the present invention have none of the problems associated with the diffusion of copper into elemental and compound semiconductors which oftentimes lead to the degradation of the semiconductor device characteristics. Additionally, the present invention relates to a method of preparing the novel compounds mentioned previously hereinabove.
摘要:
An optical switch (10) is interposed between two light paths (12,14) comprising optical fibres (20,22) and focusing elements (24,26). The switch includes a toroidal enclosure (28) filled with a transparent fluid 40 and a ferrofluid pellet (30) whose rest position is below the space between the light paths which are coupled through the transparent fluid. Electrical coils (32,34) surround the focusing elements and are energisable to generate a magnetic field to move the ferrofluid pellet to a position between the light paths, in which the opacity of the ferrofluid uncouples the light paths. Additional coils (36,38) may be energised to return the ferrofluid pellet upon de-energisation of the coils (32,34).
摘要:
The present invention is a novel thin and flexible radio frequency (RF) tag that comprises a semiconductor circuit that has logic, memory, and radio frequency circuits, connected to an antenna with all interconnections placed on a single plane of wiring without crossovers. The elements of the package (substrate, antenna, and laminated covers) are flexible. The elements of the package are all thin. The tag is thin and flexible, enabling a unique range of applications including: RF ID tagging of credit cards, passports, admission tickets, and postage stamps.
摘要:
The present invention relates to novel compounds that exhibit unusually low electrical resistivity at room temperature. More specifically, it has been discovered that the incorporation of at least 1 to 15 atomic percent of gallium and/or at least 1 to 15 atomic percent gold into stoichiometric copper germanide (Cu₃Ge) compound results in a room temperature resistivity comparable to elemental copper, but with superior chemical and electronic stability upon exposure to air or oxygen at high temperatures. Furthermore, the compounds of the present invention have none of the problems associated with the diffusion of copper into elemental and compound semiconductors which oftentimes lead to the degradation of the semiconductor device characteristics. Additionally, the present invention relates to a method of preparing the novel compounds mentioned previously hereinabove.
摘要:
An improved X-ray lithography mask has been fabricated by forming an X-ray absorbing lithography pattern on a supporting foil of hydrogenated amorphous carbon. The substrate foil is formed by depositing a carbon film in the presence of hydrogen onto a surface having a temperature below 375°C. The hydrogen concentration is maintained sufficiently high that the resulting film has at least one atom percent of hydrogen. A film having about 20 atom percent of hydrogen is preferred. While impurities are permitted, impurities must be maintained at a level such that the optical bandgap of the resulting film is at least one electron volt. A film with an optical bandgap of about 2 electron volts is preferred.