A new compound with room temperature electrical resistivity comparable to that of elemental copper
    5.
    发明公开
    A new compound with room temperature electrical resistivity comparable to that of elemental copper 失效
    室温电阻率与元素铜相当的新化合物

    公开(公告)号:EP0612855A2

    公开(公告)日:1994-08-31

    申请号:EP94101171.0

    申请日:1994-01-27

    IPC分类号: C22C9/00 H01L23/532

    摘要: The present invention relates to novel compounds that exhibit unusually low electrical resistivity at room temperature. More specifically, it has been discovered that the incorporation of at least 1 to 15 atomic percent of gallium and/or at least 1 to 15 atomic percent gold into stoichiometric copper germanide (Cu₃Ge) compound results in a room temperature resistivity comparable to elemental copper, but with superior chemical and electronic stability upon exposure to air or oxygen at high temperatures. Furthermore, the compounds of the present invention have none of the problems associated with the diffusion of copper into elemental and compound semiconductors which oftentimes lead to the degradation of the semiconductor device characteristics. Additionally, the present invention relates to a method of preparing the novel compounds mentioned previously hereinabove.

    摘要翻译: 本发明涉及在室温下表现出异常低电阻率的新型化合物。 更具体地说,已经发现在化学计量的锗化铜(Cu 3 Ge)化合物中加入至少1-15原子百分比的镓和/或至少1-15原子百分比的金导致室温电阻率与元素铜相当, 但在高温下暴露于空气或氧气时具有优异的化学和电子稳定性。 此外,本发明的化合物没有与铜扩散到元素和化合物半导体有关的问题,这往往导致半导体器件特性的退化。 此外,本发明涉及制备上文提到的新化合物的方法。

    Optical switch
    6.
    发明公开
    Optical switch 失效
    Optischer Schalter。

    公开(公告)号:EP0042907A1

    公开(公告)日:1982-01-06

    申请号:EP81101638.5

    申请日:1981-03-06

    IPC分类号: G02B6/24 G02F1/00

    摘要: An optical switch (10) is interposed between two light paths (12,14) comprising optical fibres (20,22) and focusing elements (24,26). The switch includes a toroidal enclosure (28) filled with a transparent fluid 40 and a ferrofluid pellet (30) whose rest position is below the space between the light paths which are coupled through the transparent fluid. Electrical coils (32,34) surround the focusing elements and are energisable to generate a magnetic field to move the ferrofluid pellet to a position between the light paths, in which the opacity of the ferrofluid uncouples the light paths. Additional coils (36,38) may be energised to return the ferrofluid pellet upon de-energisation of the coils (32,34).

    摘要翻译: 光开关(10)插入在包括光纤(20,22)和聚焦元件(24,26)的两个光路(12,14)之间。 开关包括填充有透明流体40和铁磁流体颗粒(30)的环形外壳(28),其静止位置位于通过透明流体联接的光路之间的空间的下方。 电气线圈(32,34)围绕着聚焦元件,并且能够激发以产生磁场,以将铁磁流体颗粒移动到光路之间的位置,在该位置之间,铁磁流体的不透明度使光路脱离。 当线圈(32,34)断电时,额外的线圈(36,38)可被通电以返回铁磁流体颗粒。

    A new compound with room temperature electrical resistivity comparable to that of elemental copper
    8.
    发明公开
    A new compound with room temperature electrical resistivity comparable to that of elemental copper 失效
    与电阻率在室温下媲美的铜元素的新连接。

    公开(公告)号:EP0612855A3

    公开(公告)日:1994-11-17

    申请号:EP94101171.0

    申请日:1994-01-27

    IPC分类号: C22C9/00 H01L23/532

    摘要: The present invention relates to novel compounds that exhibit unusually low electrical resistivity at room temperature. More specifically, it has been discovered that the incorporation of at least 1 to 15 atomic percent of gallium and/or at least 1 to 15 atomic percent gold into stoichiometric copper germanide (Cu₃Ge) compound results in a room temperature resistivity comparable to elemental copper, but with superior chemical and electronic stability upon exposure to air or oxygen at high temperatures. Furthermore, the compounds of the present invention have none of the problems associated with the diffusion of copper into elemental and compound semiconductors which oftentimes lead to the degradation of the semiconductor device characteristics. Additionally, the present invention relates to a method of preparing the novel compounds mentioned previously hereinabove.

    摘要翻译: 与CPD。 所有这一切是oxidn高度耐药。 并具有在室温下的低电阻率。 包括化学计量Cu3Ge contg。 1-15原子%Ga和/或Au。 最优先。 在Cu3Ge Ga和/或Au的含量为1-3原子%。 在CPD的电阻率。 在室温。 是2.6-2.9微米的ω厘米。

    X-ray lithographic mask
    10.
    发明公开
    X-ray lithographic mask 失效
    面膜对X射线光刻。

    公开(公告)号:EP0097764A1

    公开(公告)日:1984-01-11

    申请号:EP83101759.5

    申请日:1983-02-23

    IPC分类号: G03F1/00

    摘要: An improved X-ray lithography mask has been fabricated by forming an X-ray absorbing lithography pattern on a supporting foil of hydrogenated amorphous carbon. The substrate foil is formed by depositing a carbon film in the presence of hydrogen onto a surface having a temperature below 375°C. The hydrogen concentration is maintained sufficiently high that the resulting film has at least one atom percent of hydrogen. A film having about 20 atom percent of hydrogen is preferred. While impurities are permitted, impurities must be maintained at a level such that the optical bandgap of the resulting film is at least one electron volt. A film with an optical bandgap of about 2 electron volts is preferred.