公开(公告)号：EP2643261A4

公开(公告)日：2018-01-17

申请号：EP11843548

申请日：2011-11-22

Applicant: SENSEAIR AB

Inventor： BRAUN STEFAN ,  NIKLAUS FRANK ,  FISCHER ANDREAS ,  GRADIN HENRIK

IPC: H01L21/60 ,  B23K20/00 ,  B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  C22C19/03 ,  H01L23/49

CPC classification number: H01L24/85 ,  B23K20/007 ,  C22C19/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/94 ,  H01L2224/04042 ,  H01L2224/05571 ,  H01L2224/05599 ,  H01L2224/45 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45155 ,  H01L2224/4813 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85099 ,  H01L2224/85205 ,  H01L2224/85345 ,  H01L2224/85375 ,  H01L2224/85385 ,  H01L2224/85399 ,  H01L2224/858 ,  H01L2224/85855 ,  H01L2224/85899 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/01049 ,  H01L2924/00015 ,  H01L2924/20753 ,  H01L2924/01022

Abstract: The present invention relates to a method to attach a shape memory alloy wire to a substrate, where the wire is mechanically attached into a 3D structure on the substrate. The present invention also relates to a device comprising a shape memory alloy wire attached to a substrate, where the wire is mechanically attached into a 3D structure on the substrate.

公开(公告)号：EP3131113A4

公开(公告)日：2017-03-22

申请号：EP15866375

申请日：2015-07-22

Applicant: NIPPON MICROMETAL CORP ,  NIPPON STEEL & SUMIKIN MAT CO

Inventor： YAMADA TAKASHI ,  ODA DAIZO ,  HAIBARA TERUO ,  OISHI RYO ,  SAITO KAZUYUKI ,  UNO TOMOHIRO

IPC: H01L23/49 ,  C22C9/00

CPC classification number: H01L24/45 ,  B23K35/0227 ,  B23K35/3013 ,  B23K35/302 ,  B23K2201/40 ,  C22C5/04 ,  C22C9/00 ,  C22C9/04 ,  C22C9/06 ,  H01L24/05 ,  H01L24/43 ,  H01L24/48 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/4382 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45 ,  H01L2224/45005 ,  H01L2224/45015 ,  H01L2224/45105 ,  H01L2224/45109 ,  H01L2224/45111 ,  H01L2224/45113 ,  H01L2224/45118 ,  H01L2224/4512 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45169 ,  H01L2224/45173 ,  H01L2224/45178 ,  H01L2224/45541 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48227 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48824 ,  H01L2224/78 ,  H01L2224/78251 ,  H01L2224/85 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85203 ,  H01L2224/85444 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01034 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/0665 ,  H01L2924/0705 ,  H01L2924/10253 ,  H01L2924/186 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01045 ,  H01L2924/01049 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01031 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01083 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/01029 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/00015 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/20752 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/20105 ,  H01L2924/01001 ,  H01L2924/01007 ,  H01L2924/00012 ,  H01L2924/00

Abstract: There is provided a bonding wire for a semiconductor device, the bonding wire including a Cu alloy core material and a Pd coating layer formed on a surface thereof, achieving simultaneously improvement in bonding reliability of a ball bonded part in HTS at 175°C to 200°C and an strength ratio (= ultimate strength/0.2% offset yield strength) of 1.1 to 1.6. Containing one or more of Ni, Zn, Rh, in, Ir, and Pt in the wire in a total amount of 0.03 to 2% by mass improves the bonding reliability of the ball bonded part in HTS, and furthermore, making an orientation proportion of a crystal orientation angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 50% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.3 µm provides a strength ratio of 1.6 or less.

Abstract translation: 提供一种用于半导体器件的接合线，接合线包括Cu合金芯材和在其表面上形成的Pd涂层，同时在HTS中在175℃至200℃的接合可靠性提高 °C和1.1至1.6的强度比（=极限强度/ 0.2％偏移屈服强度）。 通过含有总量为0.03〜2质量％的Ni，Zn，Rh，In，Ir及Pt中的一种以上，可以提高HTS中球接合部的接合可靠性，并且可以使取向比例 在芯线材料的垂直于线材的方向上的截面上测量晶体取向时，在线材长度方向上的晶体取向中，相对于线材长度方向成15°以下的角度的晶体取向<100>为50％以上 并且使芯材截面中在与接合线的线轴垂直的方向上的平均晶粒尺寸为0.9至1.3μm，提供1.6或更小的强度比。

公开(公告)号：EP3136435A1

公开(公告)日：2017-03-01

申请号：EP15866376.5

申请日：2015-07-23

Applicant: Nippon Micrometal Corporation ,  Nippon Steel & Sumikin Materials Co., Ltd.

Inventor： YAMADA, Takashi ,  ODA, Daizo ,  OISHI, Ryo ,  UNO, Tomohiro

IPC: H01L23/49 ,  C22C9/00

CPC classification number: H01L24/45 ,  B23K35/0227 ,  B23K35/302 ,  B23K2201/40 ,  C22C5/04 ,  C22C9/00 ,  C22C9/04 ,  C22C9/06 ,  H01L23/49582 ,  H01L24/05 ,  H01L24/43 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45 ,  H01L2224/45005 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45164 ,  H01L2224/45169 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45847 ,  H01L2224/45944 ,  H01L2224/45964 ,  H01L2224/4801 ,  H01L2224/48011 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/78 ,  H01L2224/78301 ,  H01L2224/85 ,  H01L2224/85045 ,  H01L2224/85075 ,  H01L2224/85181 ,  H01L2224/85203 ,  H01L2224/85207 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/15738 ,  H01L2924/15763 ,  H01L2924/35121 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/01028 ,  H01L2924/01015 ,  H01L2924/01005 ,  H01L2924/01004 ,  H01L2924/01026 ,  H01L2924/01012 ,  H01L2924/01022 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01014 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/00015 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/01007 ,  H01L2924/20654 ,  H01L2924/20655 ,  H01L2924/20656 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01033 ,  H01L2924/01083

Abstract: There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at% at an outermost surface thereof and has the core material containing either or both of Pd and Pt in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at% to 75 at%.

Abstract translation: 提供一种用于半导体器件的接合线，该接合线包括在Cu合金芯材的表面上具有Pd作为主要成分的涂层和在该涂层的表面上包含Au和Pd的表皮合金层，该接合线进一步 即使在高湿度加热条件下，也改善了镀钯引线框架上的第二焊接性并实现优异的球焊性。 包括在Cu合金芯材表面上具有Pd作为主要成分的涂层和在涂层表面上包含Au和Pd的表皮合金层的半导体器件用接合线具有1到10的Cu浓度 并且芯材含有总量为0.1〜3.0质量％的Pd和Pt中的任一者或两者，由此实现第2接合性的提高和高湿加热条件下的优异的球接合性 。 此外，表皮合金层中Au的最大浓度优选为15原子％至75原子％。

公开(公告)号：EP2779232A2

公开(公告)日：2014-09-17

申请号：EP14160005.6

申请日：2014-03-14

Applicant: Renesas Electronics Corporation

Inventor： Kajiwara, Ryoichi ,  Nakajo, Takuya ,  Arai, Katsuo ,  Yato, Yuichi ,  Oka, Hiroi ,  Hozoji, Hiroshi

IPC: H01L23/488 ,  H01L23/49 ,  H01L21/60 ,  H01L23/31 ,  H01L23/495

CPC classification number: H01L23/49 ,  H01L21/50 ,  H01L23/293 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3192 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/49582 ,  H01L23/562 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L29/1608 ,  H01L29/2003 ,  H01L2224/0381 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29294 ,  H01L2224/29439 ,  H01L2224/2949 ,  H01L2224/3011 ,  H01L2224/3201 ,  H01L2224/32013 ,  H01L2224/32058 ,  H01L2224/32059 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45565 ,  H01L2224/45616 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48755 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48855 ,  H01L2224/48997 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2224/83055 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/83439 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/8392 ,  H01L2224/83951 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/8592 ,  H01L2224/85951 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/10272 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/06 ,  H01L2924/00012 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/01013 ,  H01L2924/01051 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/83205

Abstract: A semiconductor device (20, 24, 29, 32, 35, 38) includes a die pad (6), a wide gap semiconductor chip (SiC or GaN) (1) mounted on the die pad (6), a porous first sintered Ag layer (16) bonding the die pad (6) and the chip (1), and a reinforcing resin portion (17) covering a surface of the first sintered Ag layer (16) and a part of a side surface of the chip (1) and formed in a fillet shape. The semiconductor device (20, 24, 29, 32, 35, 38) further includes electrodes (1g, 1h, 2, 3, 4) on its main (1a) and back (1b) surfaces, the electrodes (1g, 1h, 2, 3, 4) being electrically connected to leads (7, 9, 11, 39), wherein the electrical connection at the front side is a wire (18, 19, 25, 26) connection and the electrical connection at the back side is the first sintered Ag layer (16). A porous second sintered Ag layer (36) or a second resin portion (30) reinforces the wire bonding portion on the electrode (1g, 2, 3). The semiconductor device (20, 24, 29, 32, 35, 38) further includes a sealing body (third resin) (14) which covers the chip (1), the first sintered Ag layer (16), and a part of the die pad (6).

Abstract translation: 一种半导体器件（20，24，29，32，35，38）包括一个垫（6），一个宽带隙半导体芯片（SiC或GaN）的安装在所述管芯焊盘（6）（1），多孔第一烧结 Ag层（16）粘合在管芯焊盘（6）和所述芯片（1），和一个增强树脂部（17），其覆盖所述第一烧结Ag层（16）的表面和芯片的侧表面的一部分（ 1）和形成为圆角形状。 的半导体器件（20，24，29，32，35，38）还包括电极（1G，1H，2，3，4）在其主（1a）和背面（1b）中的表面，所述电极（1G，1H， 2，3，4）被电连接到引线（7，9，11，39），其中，在所述前侧的电连接是电线（18，19，25，26）连接，并且在所述背面上的电连接 是第一烧结Ag层（16）。 多孔烧结第二Ag层（36）或第二树脂部分（30）迫使纯粹在电极上的引线键合部分（1克，2，3）。 的半导体器件（20，24，29，32，35，38）还包括一个密封体（第三树脂）（14），其覆盖所述芯片（1），所述第一烧结Ag层（16），和的一个部分 垫（6）。

公开(公告)号：EP2677541A1

公开(公告)日：2013-12-25

申请号：EP12172513.9

申请日：2012-06-19

Applicant: ABB Technology AG

Inventor： Geissmann, Silvan ,  Özkol, Emre

IPC: H01L23/49 ,  H01L21/60 ,  H01L25/07

CPC classification number: H01L24/48 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/49 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L25/072 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0603 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45624 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48992 ,  H01L2224/48997 ,  H01L2224/49111 ,  H01L2224/49505 ,  H01L2224/73265 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/85447 ,  H01L2224/8592 ,  H01L2224/92247 ,  H01L2924/1203 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/00

Abstract: The present invention provides a method for bonding a contact pad (9) of a power semiconductor (3), which is arranged on a substrate (1), to a metallization (7) of the substrate (1), comprising the steps of bonding at least one bonding means (11) of soft metal between the metallization (7) and the contact pad (9), and positioning the substrate (1) with the power semiconductor (3) and the at least one bonding means (11) of soft metal in a depositing bath for depositing a layer (13) of hard metal on the contact pad (9) and the at least one bonding means (11) of soft metal. The present invention also provides a substrate (1) with a power semiconductor mounted thereon, whereby the substrate (1) comprises metallization (7), the power semiconductor (3) has a contact pad (9), and at least one bonding means (11) of soft metal is bonded between the contact pad (9) and the metallization (7), whereby the at least one bonding means (11) of soft metal and the contact pad (9) have a layer (13) of hard metal deposited thereon.

Abstract translation: 本发明提供一种将布置在基板（1）上的功率半导体（3）的接触焊盘（9）接合到基板（1）的金属化（7）的方法，包括以下步骤： 在所述金属化层（7）和所述接触焊盘（9）之间的至少一个软金属接合装置（11），以及将所述基板（1）与所述功率半导体（3）和所述至少一个接合装置（11） 用于在接触焊盘（9）上沉积硬金属层（13）和至少一个软金属接合装置（11）的沉积浴中的软金属。 本发明还提供一种其上安装有功率半导体的衬底（1），由此衬底（1）包括金属化（7），功率半导体（3）具有接触焊盘（9）和至少一个接合装置 软质金属接合装置（11）与接触焊盘（9）和金属化层（7）之间结合，由此至少一个软金属接合装置（11）和接触焊盘（9）具有硬质金属层（13） 沉积在其上。

公开(公告)号：EP1906452B1

公开(公告)日：2012-08-29

申请号：EP06729669.9

申请日：2006-03-22

Applicant: SANKEN ELECTRIC CO., LTD.

Inventor： TORII, Katsuyuki c/o Sanken Electric Co., Ltd.

IPC: H01L23/52 ,  H01L25/07 ,  H01L21/98

CPC classification number: H01L25/071 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/18 ,  H01L25/50 ,  H01L29/7395 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/32145 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45155 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/13033 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012

Abstract: A reliable semiconductor device is provided which comprises lower and upper IGBTs 1 and 2 preferably bonded to each other by solder, and a wire strongly connected to lower IGBT 1. The semiconductor device comprises a lower IGBT 1, a lower electrode layer 5 secured on lower IGBT 1, an upper electrode layer 6 secured on lower electrode layer 5, an upper IGBT 2 secured on upper electrode layer 6, and a solder layer 7 which connects upper electrode layer 6 and upper IGBT 2. Lower and upper electrode layers 5 and 6 are formed of different materials from each other, and upper electrode layer 6 has a notch 36 to partly define on an upper surface 5a of lower electrode layer 5 a bonding region 15 exposed to the outside through notch 36 so that one end of a wire 8 is connected to bonding region 15. Upper electrode layer 6 can be formed of one material superior in soldering, and also, lower electrode layer 5 can be formed of another material having a high adhesive strength to wire 8.

公开(公告)号：EP1906452A4

公开(公告)日：2008-07-09

申请号：EP06729669

申请日：2006-03-22

Applicant: SANKEN ELECTRIC CO LTD

Inventor： TORII KATSUYUKI

IPC: H01L29/739 ,  H01L21/3205 ,  H01L23/498 ,  H01L23/52 ,  H01L25/04 ,  H01L25/07 ,  H01L27/00 ,  H01L27/04 ,  H01L27/088 ,  H01L29/78

CPC classification number: H01L25/071 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L24/45 ,  H01L24/49 ,  H01L25/18 ,  H01L25/50 ,  H01L29/7395 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/32145 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45155 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/13033 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012

Abstract: A reliable semiconductor device is provided which comprises lower and upper IGBTs 1 and 2 preferably bonded to each other by solder, and a wire strongly connected to lower IGBT 1. The semiconductor device comprises a lower IGBT 1, a lower electrode layer 5 secured on lower IGBT 1, an upper electrode layer 6 secured on lower electrode layer 5, an upper IGBT 2 secured on upper electrode layer 6, and a solder layer 7 which connects upper electrode layer 6 and upper IGBT 2. Lower and upper electrode layers 5 and 6 are formed of different materials from each other, and upper electrode layer 6 has a notch 36 to partly define on an upper surface 5a of lower electrode layer 5 a bonding region 15 exposed to the outside through notch 36 so that one end of a wire 8 is connected to bonding region 15. Upper electrode layer 6 can be formed of one material superior in soldering, and also, lower electrode layer 5 can be formed of another material having a high adhesive strength to wire 8.

Abstract translation: 下部IGBT和上部IGBT通过焊料良好且牢固地结合，下部IGBT和导线牢固地连接，并且形成高度可靠的半导体器件。 该半导体器件设置有牢固地结合到下IGBT（1）的下电极层（5）; 牢固地结合到下电极层（5）的上电极层（6）; 上部IGBT（2）牢固地结合到上部电极层（6）; 和用于连接上电极层（6）和上IGBT（2）的焊料（7）。 下电极层（5）和上电极层（6）由不同的材料形成，从设置在上电极层（6）上的缺口部分（36）部分地暴露于外部的电线连接区域（15）是 布置在下电极层（5）的上平面（5a）上，并且电线（8）连接到电线连接区域（15）。 上电极层（6）由具有优异可焊性的材料形成，并且下电极层（5）由与导线（8）具有高连接强度的材料形成。

公开(公告)号：EP1615267A1

公开(公告)日：2006-01-11

申请号：EP04727676.1

申请日：2004-04-15

Applicant: DENKI KAGAKU KOGYO KABUSHIKI KAISHA

Inventor： YONEMURA, Naomi, c/o Denki Kagaku Kogyo KK ,  YASHIMA, Katunori, c/o Denki Kagaku Kogyo KK ,  TSUJIMURA, Yoshihiko, c/o Denki Kagaku Kogyo KK ,  ISHIKURA, Hidenori, c/o Denki Kagaku Kogyo KK ,  SAIKI, Takashi, c/o Denki Kagaku Kogyo KK

IPC: H01L23/12 ,  H01L25/04 ,  H05K1/05 ,  H05K3/44

CPC classification number: H01L23/66 ,  H01L21/4857 ,  H01L23/142 ,  H01L23/3735 ,  H01L23/3736 ,  H01L23/49822 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/05666 ,  H01L2224/45111 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/4516 ,  H01L2224/45166 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48472 ,  H01L2224/48611 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48666 ,  H01L2224/48711 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48766 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/4886 ,  H01L2224/48866 ,  H01L2224/4911 ,  H01L2224/85411 ,  H01L2224/85424 ,  H01L2224/85439 ,  H01L2224/85455 ,  H01L2224/8546 ,  H01L2224/85466 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01061 ,  H01L2924/01063 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/19051 ,  H01L2924/30105 ,  H05K1/0224 ,  H05K1/024 ,  H05K1/025 ,  H05K3/0061 ,  H05K2201/0187 ,  H05K2201/0209 ,  H05K2201/09745 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48811 ,  H01L2224/48824 ,  H01L2224/48744 ,  H01L2224/4876 ,  H01L2224/4866

Abstract: To provide a metal base circuit board excellent in heat dissipation properties, which remarkably reduces malfunction time of a semiconductor which occurs when a hybrid integrated circuit is operated at a high frequency.
A metal base circuit board to be use for a hybrid integrated circuit, comprising circuits provided on a metal plate via an insulating layer (A, B), a power semiconductor mounted on the circuit and a control semiconductor to control the power semiconductor, provided on the circuit, wherein a low capacitance portion is embedded under a circuit portion (pad portion) on which the control semiconductor is mounted, preferably, the low capacitance portion is made of a resin containing an inorganic filler and has a dielectric constant of from 2 to 9.

Abstract translation: 提供一种金属基底电路板具有优异的散热性，从而降低了其中当混合集成电路以高频率操作的发生半导体的显着故障时间。 的金属基底电路板是使用用于混合集成电路，在绝缘层，其包括通过提供在金属板上的电路（A，B），功率半导体安装在所述电路和控制半导体控制功率半导体，设置在上 的电路中，worin低电容部分嵌入的电路部分在其上的控制半导体安装，优选地，低电容部分由含无机填料的树脂的，并且具有2至的介电常数（焊盘部）下 9日

公开(公告)号：EP1158578B1

公开(公告)日：2004-06-30

申请号：EP01119342.2

申请日：1997-09-29

Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

Inventor： Higashi, Kazushi ,  Tsukahara, Norihito ,  Yonezawa, Takahiro ,  Yagi, Yoshihiko ,  Kitayama, Yoshifumi ,  Otani, Hiroyuki

IPC: H01L21/60

CPC classification number: H01L24/78 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/11003 ,  H01L2224/1134 ,  H01L2224/11822 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13019 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/16225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/78303 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  Y10T29/49179 ,  Y10T29/49181 ,  H01L2224/13099 ,  H01L2224/48 ,  H01L2924/00 ,  H01L2924/20752 ,  H01L2924/00015 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/85399

Abstract: A method of forming a bump electrode (300) on an electrode includes the steps of forming a ball bond on an IC electrode by a wire bonding apparatus, moving up a bonding capillary, moving the bonding capillary sideway and then downward, bonding an Au wire to the ball bond portion, and cutting the Au wire. The bump electrode (300) has a particular form, with a bump portion (40) having a vertex (7) at a first height above the electrode and a tail portion (50) extending from the bump portion (300) and having a vertex (52) at approximately the same height as the vertex of the bump portion (40). Both vertices have a flattened surface (31a).

公开(公告)号：EP0947281A2

公开(公告)日：1999-10-06

申请号：EP98124759.6

申请日：1998-12-28

Applicant: F & K Delvotec Bondtechnik GmbH ,  HAHN-SCHICKARD-GESELLSCHAFT FÜR ANGEWANDTE FORSCHUNG E.V.

Inventor： Farassat, Farhad, Dr. ,  Alavi, Mani Dr. ,  Burger, Volker ,  Faist, Joachim ,  Pollak, Klaus ,  Schmidt, Bertram, Dr.

IPC: B23K26/00 ,  B23K20/02

CPC classification number: H01L24/85 ,  B23K20/004 ,  B23K26/034 ,  B23K26/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45164 ,  H01L2224/45572 ,  H01L2224/4847 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/78313 ,  H01L2224/78318 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85214 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/20755 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2224/48824 ,  H01L2924/00

Abstract: Bei einer Vorrichtung zum Thermokompressionsbonden mit einem gegen eine Bondstelle verfahrbaren Kontaktierwerkzeug (Wedge 10) und einem diesem zugeordneten, mit einer Laserstrahlquelle (23) gekoppelten sowie auf einen unterhalb des Wedge (10) zwischen diesem und der Bondstelle (14) angeordneten Bonddraht-Abschnitt gerichteten Lichtwellenleiter (19) ist erfindungsgemäß vorgesehen, daß der Lichtwellenleiter (19) durch den Wedge (10) hindurch bis nahe an den sich unterhalb des Wedge (10) befindlichen Bonddraht-Abschnitt (Meßpunkt 26) herangeführt ist, so daß im wesentlichen nur dieser Abschnitt bei Einkoppelung von Laserenergie auf eine zum Thermokompressionsbonden ausreichende Temperatur erwärmbar ist.

Abstract translation: 该装置具有可施加到接合点（14）和相关联的光导体（19）的楔（10）。 导体与激光（23）源耦合并且指向楔形物之下的键合线（13）的在其与接合位置之间的部分。 导体通过楔形件馈送到接合线段附近，使得当激光能量耦合时，只有该部分被加热用于热压接。对于热压接合的方法，还包括独立权利要求。