公开(公告)号：EP4423815A1

公开(公告)日：2024-09-04

申请号：EP22813379.9

申请日：2022-10-26

申请人： Advanced Micro Devices, Inc.

发明人： AGARWAL, Rahul ,  SWAMINATHAN, Raja

IPC分类号： H01L25/16 ,  H01L25/065

CPC分类号： H01L25/16 ,  H01L25/0652 ,  H01L2924/1904120130101 ,  H01L2924/1910420130101 ,  H01L2924/1904320130101 ,  H01L2924/1904220130101 ,  H01L2224/040120130101 ,  H01L2224/055720130101 ,  H01L2224/1626520130101 ,  H01L2224/1622720130101 ,  H01L2224/1302520130101 ,  H01L2224/1718120130101 ,  H01L2224/8100520130101 ,  H01L2224/8181520130101 ,  H01L2224/0826520130101 ,  H01L2224/8000620130101 ,  H01L2224/13120130101 ,  H01L2225/0651320130101 ,  H01L2225/0651720130101 ,  H01L2225/0654120130101 ,  H01L2224/0814620130101 ,  H01L2224/1614620130101 ,  H01L2924/1816120130101 ,  H01L2224/7325920130101 ,  H01L2224/9222420130101 ,  H01L2924/1910520130101 ,  H01L2924/1531120130101 ,  H01L24/20 ,  H01L24/73 ,  H01L24/92 ,  H01L24/08 ,  H01L24/80 ,  H01L2224/0822520130101 ,  H01L24/81 ,  H01L24/16 ,  H01L24/13 ,  H01L25/0657 ,  H01L23/481 ,  H01L23/562 ,  H01L23/3128 ,  H01L23/16 ,  H01L21/6835 ,  H01L2221/6832720130101 ,  H01L2221/6834520130101

公开(公告)号：EP4401121A1

公开(公告)日：2024-07-17

申请号：EP24150760.7

申请日：2024-01-08

申请人： Samsung Electronics Co., Ltd.

发明人： YOU, Wookyung ,  KIM, Yeonggil ,  KANG, Sangkoo ,  KANG, Minjae ,  RYU, Koungmin ,  SEO, Hoonseok ,  LEE, Woojin

IPC分类号： H01L21/768 ,  H01L23/48 ,  H01L23/485 ,  H01L23/528 ,  H01L25/065

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2224/8089620130101 ,  H01L2224/8089520130101 ,  H01L25/0657 ,  H01L24/08 ,  H01L2224/0814620130101 ,  H01L21/76895 ,  H01L23/485 ,  H01L2224/0556720130101 ,  H01L2224/055720130101 ,  H01L2224/0557320130101 ,  H01L2224/0618120130101 ,  H01L23/5286 ,  H01L25/50

摘要： A semiconductor device includes: a device structure including a first semiconductor substrate and having an active pattern extending in first direction, a conductive through-via electrically connected to a front wiring layer and penetrating through the first semiconductor substrate, wherein the first semiconductor substrate has a non-planarized lower surface in which a peripheral region around the conductive through-via curves downward, a first bonding structure having a planarized insulating layer disposed on the second surface of the first semiconductor substrate and having a planarized upper surface.

公开(公告)号：EP3391409B1

公开(公告)日：2024-05-22

申请号：EP16876775.4

申请日：2016-12-16

IPC分类号： H01L23/485 ,  H01L21/48 ,  H01L21/60 ,  H01L25/065

CPC分类号： H01L25/0657 ,  H01L2225/0655520130101 ,  H01L25/50 ,  H01L2225/0651320130101 ,  H01L2225/0659320130101 ,  H01L2224/0823820130101 ,  H01L2224/0823720130101 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L2224/0554120130101 ,  H01L2224/0555120130101 ,  H01L2224/0555220130101 ,  H01L2224/0557120130101 ,  H01L2224/0557320130101 ,  H01L2224/0557820130101 ,  H01L2224/05620130101 ,  H01L2224/0563920130101 ,  H01L2224/0564420130101 ,  H01L2224/0564720130101 ,  H01L2224/0565520130101 ,  H01L2224/0568420130101 ,  H01L2224/080720130101 ,  H01L2224/0814620130101 ,  H01L2224/8089520130101 ,  H01L2224/8089620130101 ,  H01L2224/0811120130101 ,  H01L2224/0812120130101 ,  H01L2224/0814820130101 ,  H01L2224/8003520130101 ,  H01L2224/8093520130101 ,  H01L2224/0420130101 ,  H01L2224/0566420130101 ,  H01L2224/8001320130101 ,  H01L2224/0512420130101 ,  H01L2224/0507320130101 ,  H01L2224/8001120130101 ,  H01L2224/0560920130101 ,  H01L2224/0561120130101 ,  H01L2224/8081520130101 ,  H01L2224/0568720130101 ,  H01L2224/0568820130101 ,  H01L2224/0341620130101 ,  H01L2224/03520130101 ,  H01L24/03 ,  H01L2224/0360220130101 ,  H01L2224/0361620130101 ,  H01L2224/0346420130101 ,  H01L2224/0361220130101 ,  H01L2224/0515520130101 ,  H01L2924/38120130101 ,  H01L2924/351220130101 ,  H01L2224/0566920130101 ,  H01L2224/0514420130101 ,  H01L2224/803420130101 ,  H01L2224/8098620130101 ,  H01L2224/0556920130101 ,  H01L2224/0814520130101