公开(公告)号：EP3891799B1

公开(公告)日：2024-06-19

申请号：EP19927324.4

申请日：2019-04-30

IPC分类号： G11C11/401 ,  H01L25/18 ,  H01L21/50 ,  G11C16/04 ,  H01L23/00 ,  H01L23/31

CPC分类号： G11C11/005 ,  G11C16/0483 ,  G11C11/401 ,  H01L25/18 ,  H01L25/50 ,  H01L23/3114 ,  H01L24/08 ,  H01L24/80 ,  H01L25/0657 ,  H01L2224/0559920130101 ,  H01L2224/0562420130101 ,  H01L2224/0564720130101 ,  H01L2224/0565720130101 ,  H01L2224/0568420130101 ,  H01L2224/0814520130101 ,  H01L2224/8035720130101 ,  H01L2224/9420130101 ,  H01L2225/0656520130101 ,  H01L2224/8089520130101 ,  H01L2224/8089620130101 ,  H01L27/0688 ,  H01L2225/0654120130101 ,  G11C11/5621 ,  G11C11/5678 ,  G11C2213/7120130101 ,  H01L24/05 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/0564420130101 ,  H01L2224/2918620130101 ,  H01L2224/8389620130101 ,  H01L2224/8037920130101 ,  H10B63/30 ,  H10B63/84 ,  H10N70/231 ,  H10B12/50 ,  H10B43/40 ,  H10B43/27

公开(公告)号：EP3940772B1

公开(公告)日：2024-07-17

申请号：EP20893357.2

申请日：2020-06-15

IPC分类号： H01L23/485 ,  H01L21/60 ,  H01L23/31

CPC分类号： H01L23/3192 ,  H01L24/13 ,  H01L24/11 ,  H01L2224/1308420130101 ,  H01L2224/040120130101 ,  H01L2224/0555820130101 ,  H01L2224/1301820130101 ,  H01L2224/1301720130101 ,  H01L2224/1301620130101 ,  H01L2224/1190320130101 ,  H01L2224/1314720130101 ,  H01L2224/8181520130101 ,  H01L2224/1014520130101 ,  H01L2224/13120130101 ,  H01L2224/0564720130101 ,  H01L2224/0556820130101 ,  H01L2224/0557220130101 ,  H01L2224/034520130101 ,  H01L2224/0516620130101 ,  H01L2224/0508220130101 ,  H01L2224/1146220130101 ,  H01L2224/114720130101 ,  H01L2224/1183120130101 ,  H01L2224/1315520130101 ,  H01L2224/114520130101 ,  H01L2224/116120130101 ,  H01L2224/0391220130101 ,  H01L2224/036120130101 ,  H01L2224/11920130101 ,  H01L24/03 ,  H01L24/05 ,  H01L24/81 ,  H01L2224/130820130101 ,  H01L2224/1365520130101 ,  H01L2224/1307620130101 ,  H01L2924/384120130101 ,  H01L2924/351120130101 ,  H01L2224/1623720130101 ,  H01L2224/1622720130101 ,  H01L2224/1610520130101 ,  H01L2224/1605720130101 ,  H01L2224/1605820130101 ,  H01L2224/0362220130101 ,  H01L2224/0512420130101 ,  H01L2224/0514720130101 ,  H01L2224/0566620130101 ,  H01L2224/0568420130101 ,  H01L2224/1311120130101 ,  H01L2924/38120130101

公开(公告)号：EP3619748B1

公开(公告)日：2024-04-17

申请号：EP18794585.2

申请日：2018-05-07

IPC分类号： H01L21/683 ,  H01L23/00 ,  H01L33/00 ,  H01S5/02 ,  H01L21/02 ,  H01S5/343 ,  H01L33/46 ,  H01L33/32 ,  H01L33/20

CPC分类号： H01L33/0075 ,  H01L33/20 ,  H01S5/0217 ,  H01S5/34333 ,  H01S2304/1220130101 ,  H01L33/0093 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02647 ,  H01L21/02458 ,  H01L2224/3224520130101 ,  H01L2224/8319220130101 ,  H01L2224/8389520130101 ,  H01L2224/3222520130101 ,  H01L2224/8344420130101 ,  H01L2224/8320320130101 ,  H01L2224/0561120130101 ,  H01L2224/0564420130101 ,  H01L2924/1574720130101 ,  H01L2924/103320130101 ,  H01L2224/0402620130101 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/8380520130101 ,  H01L24/83 ,  H01L2224/8301320130101 ,  H01L2224/8302220130101 ,  H01L2224/2911120130101 ,  H01L2224/2914420130101 ,  H01L2224/8344720130101 ,  H01L2224/8044420130101 ,  H01L2224/8001320130101 ,  H01L2224/8020320130101 ,  H01L2224/8089520130101 ,  H01L24/80 ,  H01L2224/0824520130101 ,  H01L2224/0822520130101 ,  H01L24/08 ,  H01L2224/0420130101 ,  H01L2224/034520130101 ,  H01L24/03 ,  H01L2224/8000620130101 ,  H01L2224/8300520130101 ,  H01L2224/0823820130101 ,  H01L2224/0825820130101 ,  H01L2224/0555820130101 ,  H01L21/6835 ,  H01L24/06 ,  H01L2224/0618120130101 ,  H01L2924/1204220130101 ,  H01L2224/920220130101 ,  H01L2224/9420130101 ,  H01L24/94 ,  H01L24/92 ,  H01L2224/9214220130101 ,  H01L2224/921220130101 ,  H01L2221/6838120130101 ,  H01L2221/6831820130101 ,  H01L2221/683520130101 ,  H01L2221/6836320130101 ,  H01L2224/80420130101 ,  H01L2224/804920130101 ,  H01L2224/051820130101 ,  H01L2224/0514420130101 ,  H01L2224/0566920130101 ,  H01L2224/0518420130101 ,  H01L2224/0513920130101 ,  H01L2224/0566420130101 ,  H01L2224/0565520130101 ,  H01L2224/0563920130101 ,  H01L2224/0516420130101 ,  H01L2224/0516620130101 ,  H01L2224/0516920130101 ,  H01L2224/056820130101 ,  H01L2224/0568420130101 ,  H01L2224/0566620130101 ,  H01L2224/0515520130101 ,  H01S5/0203 ,  H01L2224/29120130101

公开(公告)号：EP4435152A2

公开(公告)日：2024-09-25

申请号：EP24191899.4

申请日：2017-10-25

申请人： Adeia Semiconductor Technologies LLC

发明人： UZOH, Cyprian, Emeka

IPC分类号： C25D7/12

CPC分类号： H01L24/81 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/1308420130101 ,  H01L2224/1626520130101 ,  H01L2224/1385520130101 ,  H01L2224/1162220130101 ,  H01L2224/1626820130101 ,  H01L2224/1605920130101 ,  H01L24/80 ,  H01L2224/040120130101 ,  H01L2224/055720130101 ,  H01L2224/0560920130101 ,  H01L2224/0561120130101 ,  H01L2224/0561620130101 ,  H01L2224/0562420130101 ,  H01L2224/0563920130101 ,  H01L2224/0564420130101 ,  H01L2224/0564720130101 ,  H01L2224/0565520130101 ,  H01L2224/0568420130101 ,  H01L2224/1146220130101 ,  H01L2224/1146420130101 ,  H01L2224/114720130101 ,  H01L2224/1300720130101 ,  H01L2224/1301920130101 ,  H01L2224/1310520130101 ,  H01L2224/1310920130101 ,  H01L2224/1311120130101 ,  H01L2224/1311620130101 ,  H01L2224/1312420130101 ,  H01L2224/1313920130101 ,  H01L2224/1314420130101 ,  H01L2224/1314720130101 ,  H01L2224/1315520130101 ,  H01L2224/1318420130101 ,  H01L2224/1356220130101 ,  H01L2224/1356420130101 ,  H01L2224/1365520130101 ,  H01L2224/1368420130101 ,  H01L2224/1380920130101 ,  H01L2224/1381120130101 ,  H01L2224/1384720130101 ,  H01L2224/1605820130101 ,  H01L2224/1614820130101 ,  H01L2224/291920130101 ,  H01L2224/8089520130101 ,  H01L2224/8089620130101 ,  H01L2224/8106520130101 ,  H01L2224/8107520130101 ,  H01L2224/8109120130101 ,  H01L2224/8119320130101 ,  H01L2224/8120320130101 ,  H01L2224/818120130101 ,  H01L2224/818420130101 ,  H01L2225/105820130101 ,  H01L2924/1531120130101 ,  H01L2224/810920130101 ,  H01L2224/0556820130101 ,  H01L2224/0391220130101 ,  H01L2224/8109920130101 ,  H01L2224/1100920130101 ,  H01L2225/0651320130101 ,  H01L2224/1650320130101 ,  H01L2224/0300920130101 ,  H01L2224/1380520130101 ,  H01L2224/8108520130101 ,  H01L2224/8035720130101 ,  H01L2224/055820130101 ,  H01L2224/0556220130101 ,  H01L2224/0556420130101 ,  H01L2224/0557120130101 ,  H01L2224/0557220130101 ,  H01L23/552 ,  H01L2224/8385620130101 ,  H01L2224/8386220130101 ,  H01L2224/9212520130101 ,  H01L2224/808120130101 ,  H01L2224/8098620130101 ,  H01L2224/1623720130101 ,  H01L2224/1614720130101 ,  H01L2224/0823720130101 ,  H01L2224/0514720130101 ,  H01L2224/0558220130101 ,  H01L2224/0558320130101 ,  H01L2224/0584720130101 ,  H01L2224/0584420130101 ,  H01L2224/0585520130101 ,  H01L2224/7310420130101 ,  H01L2224/7320420130101 ,  H05K3/4007 ,  H05K3/3436 ,  H05K2201/1024220130101 ,  H01L2224/803420130101 ,  H01L2224/8014120130101 ,  H01L2224/0814520130101 ,  C25D7/123 ,  C25D5/022 ,  C23C18/1653 ,  C25D5/48 ,  C25D5/10 ,  C25D5/18 ,  C25D3/38 ,  C25D5/605 ,  C25D5/12 ,  C23C18/1658

摘要： A bonded structure, comprising a first component including a first substrate having a first dielectric surface and a first conductive feature at the first dielectric surface; and a second component including a second substrate having a second dielectric surface and a second conductive feature at the second dielectric surface. The first dielectric surface is directly bonded to the second dielectric surface without an underfill. The first conductive feature is bonded to second conductive feature by way of a conductive bond region between the first and second conductive features, wherein the bond region comprises structural evidence of conductive nanoparticles employed in bonding the first conductive feature to the second conductive feature.

公开(公告)号：EP4401127A2

公开(公告)日：2024-07-17

申请号：EP24176697.1

申请日：2019-04-30

申请人： Yangtze Memory Technologies Co., Ltd.

发明人： LIU, Jun

IPC分类号： H01L23/31

CPC分类号： G11C11/005 ,  G11C16/0483 ,  G11C11/401 ,  H01L25/18 ,  H01L25/50 ,  H01L23/3114 ,  H01L24/08 ,  H01L24/80 ,  H01L25/0657 ,  H01L2224/0559920130101 ,  H01L2224/0562420130101 ,  H01L2224/0564720130101 ,  H01L2224/0565720130101 ,  H01L2224/0568420130101 ,  H01L2224/0814520130101 ,  H01L2224/8035720130101 ,  H01L2224/9420130101 ,  H01L2225/0656520130101 ,  H01L2224/8089520130101 ,  H01L2224/8089620130101 ,  H01L27/0688 ,  H01L2225/0654120130101 ,  G11C11/5621 ,  G11C11/5678 ,  G11C2213/7120130101 ,  H01L24/05 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/0564420130101 ,  H01L2224/2918620130101 ,  H01L2224/8389620130101 ,  H01L2224/8037920130101 ,  H10B63/30 ,  H10B63/84 ,  H10N70/231 ,  H10B12/50 ,  H10B43/40 ,  H10B43/27

摘要： Embodiments of three-dimensional (3D) memory devices with embedded dynamic random-access memory (DRAM) and methods for forming the 3D memory devices are disclosed. In an example, a 3D memory device includes a first semiconductor structure including a peripheral circuit, an array of embedded DRAM cells, and a first bonding layer including a plurality of first bonding contacts. The 3D memory device also further includes a second semiconductor structure including an array of 3D NAND memory strings and a second bonding layer including a plurality of second bonding contacts. The 3D memory device further includes a bonding interface between the first bonding layer and the second bonding layer. The first bonding contacts are in contact with the second bonding contacts at the bonding interface.

公开(公告)号：EP4393011A1

公开(公告)日：2024-07-03

申请号：EP22768338.0

申请日：2022-08-19

申请人： Commissariat à l'énergie atomique et aux énergies alternatives

发明人： SOURIAU, Jean-Charles ,  DE GIROLAMO, Julia ,  FOURNIER, Adeline

IPC分类号： H01L23/498 ,  H01L23/538 ,  H01L23/00

CPC分类号： H01L23/4985 ,  H01L23/5387 ,  H01L23/49827 ,  H01L23/5384 ,  H01L24/29 ,  H01L2224/2901920130101 ,  H01L2224/291920130101 ,  H01L2224/3222520130101 ,  H01L2224/040120130101 ,  H01L24/73 ,  H01L24/13 ,  H01L2224/2919120130101 ,  H01L2224/1319320130101 ,  H01L2224/1301920130101 ,  H01L2224/7310420130101 ,  H01L2224/2733420130101 ,  H01L2224/2907620130101 ,  H01L2224/2907820130101 ,  H01L2224/2919320130101 ,  H01L2224/0402620130101 ,  H01L2224/27120130101 ,  H01L24/27 ,  H01L24/11 ,  H01L2224/1133420130101 ,  H01L2224/11120130101 ,  H01L2224/1622720130101 ,  H01L24/32 ,  H01L24/16 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/8320120130101 ,  H01L2224/8120120130101 ,  H01L2224/320720130101 ,  H01L2224/8334520130101 ,  H01L2224/8134520130101 ,  H01L2224/160720130101 ,  H01L2924/351220130101 ,  H01L2224/8144720130101 ,  H01L2224/0564420130101 ,  H01L2224/0566920130101 ,  H01L2224/8148420130101 ,  H01L2224/0565520130101 ,  H01L2224/0563920130101 ,  H01L2224/1329120130101 ,  H01L2224/8146620130101 ,  H01L2224/0562420130101 ,  H01L2224/0564720130101 ,  H01L2224/8147620130101 ,  H01L2224/13120130101 ,  H01L2224/8144420130101 ,  H01L2224/834920130101 ,  H01L2224/8145520130101 ,  H01L2224/2929120130101 ,  H01L2224/132920130101 ,  H01L2224/1339320130101 ,  H01L2224/8146920130101 ,  H01L2224/292920130101 ,  H01L2224/0563820130101 ,  H01L2224/29120130101 ,  H01L2224/0567620130101 ,  H01L2224/8143920130101 ,  H01L2224/0568420130101 ,  H01L2224/0566620130101 ,  H01L2224/8142420130101 ,  H01L2224/2939320130101 ,  H01L2224/29320130101 ,  H01L2224/13320130101

公开(公告)号：EP4364188A2

公开(公告)日：2024-05-08

申请号：EP22747484.8

申请日：2022-06-28

申请人： MACOM Technology Solutions Holdings, Inc.

发明人： LONG, Rathnait ,  STRUBLE, Wayne ,  CARLSON, Douglas

IPC分类号： H01L21/60 ,  H01L23/485 ,  H03H3/04 ,  H03H9/05 ,  H03H3/02 ,  B33Y10/00 ,  H01L21/67 ,  H01L23/31

CPC分类号： H01L2224/1614520130101 ,  H01L2224/1622720130101 ,  H01L2224/1301420130101 ,  H01L2224/1301220130101 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/1301320130101 ,  H01L23/3171 ,  H01L2224/1301720130101 ,  H01L2224/1301920130101 ,  H01L2224/1301520130101 ,  H01L2224/039120130101 ,  H01L24/742 ,  H01L2224/1131220130101 ,  H01L2224/1190120130101 ,  H01L24/14 ,  H01L2224/1405120130101 ,  H01L2224/1413520130101 ,  H03H3/04 ,  H03H2003/044220130101 ,  H03H9/0523 ,  H03H3/02 ,  H01L24/05 ,  H01L2224/040120130101 ,  H01L24/16 ,  H01L2224/113120130101 ,  B33Y10/00 ,  B33Y80/00 ,  B22F10/10 ,  H03H2003/02320130101 ,  H01L2224/0564720130101 ,  H01L2224/1315720130101 ,  H01L2224/1317620130101 ,  H01L2224/1312420130101 ,  H01L2224/13120130101 ,  H01L2224/0564420130101 ,  H01L2224/0568120130101 ,  H01L2224/0566420130101 ,  H01L2224/1311120130101 ,  H01L2224/1314420130101 ,  H01L2224/0563920130101 ,  H01L2224/1316620130101 ,  H01L2224/1318120130101 ,  H01L2224/1318420130101 ,  H01L2224/1313920130101 ,  H01L2224/0568420130101 ,  H01L2224/0562420130101 ,  H01L2224/1314720130101

公开(公告)号：EP4362077A3

公开(公告)日：2024-08-14

申请号：EP24155511.9

申请日：2019-08-23

申请人： Yangtze Memory Technologies Co., Ltd.

发明人： OH, Jinyong

IPC分类号： H01L23/48 ,  H01L23/522 ,  H01L23/00 ,  H10B43/27 ,  H10B43/40

CPC分类号： H01L23/5225 ,  H01L23/481 ,  H01L2224/0814520130101 ,  H01L2225/0653720130101 ,  H01L2225/0652420130101 ,  H01L2225/0654120130101 ,  H01L2224/8389620130101 ,  H01L2224/8089520130101 ,  H01L2224/3214520130101 ,  H01L2224/2918620130101 ,  H01L24/05 ,  H01L24/08 ,  H01L24/29 ,  H01L24/83 ,  H01L24/80 ,  H01L24/32 ,  H01L2224/0564720130101 ,  H01L2224/0568420130101 ,  H01L2224/0565720130101 ,  H01L2224/0562420130101 ,  H01L2224/0568620130101 ,  H10B43/40 ,  H10B43/27

摘要： A non-volatile memory device includes a first substrate, a second substrate, a memory array, a circuit structure, a bonding structure, and a shielding structure. A second front side of the second substrate faces a first front side of the first substrate. The memory array is disposed on the first substrate and disposed at the first front side of the first substrate. The circuit structure is disposed on the second substrate and disposed at the second front side of the second substrate. The bonding structure is disposed between the memory array and the circuit structure. The circuit structure is electrically connected with the memory array through the bonding structure. The shielding structure is disposed between the memory array and the circuit structure and surrounds the bonding structure. The shielding structure is electrically connected to a voltage source.

公开(公告)号：EP4411843A2

公开(公告)日：2024-08-07

申请号：EP24169398.5

申请日：2018-05-07

申请人： The Regents of the University of California

发明人： KAMIKAWA, Takeshi ,  GANDROTHULA, Srinivas ,  LI, Hongjian ,  COHEN, Daniel A.

IPC分类号： H01L33/20

CPC分类号： H01L33/0075 ,  H01L33/20 ,  H01S5/0217 ,  H01S5/34333 ,  H01S2304/1220130101 ,  H01L33/0093 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02647 ,  H01L21/02458 ,  H01L2224/3224520130101 ,  H01L2224/8319220130101 ,  H01L2224/8389520130101 ,  H01L2224/3222520130101 ,  H01L2224/8344420130101 ,  H01L2224/8320320130101 ,  H01L2224/0561120130101 ,  H01L2224/0564420130101 ,  H01L2924/1574720130101 ,  H01L2924/103320130101 ,  H01L2224/0402620130101 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/8380520130101 ,  H01L24/83 ,  H01L2224/8301320130101 ,  H01L2224/8302220130101 ,  H01L2224/2911120130101 ,  H01L2224/2914420130101 ,  H01L2224/8344720130101 ,  H01L2224/8044420130101 ,  H01L2224/8001320130101 ,  H01L2224/8020320130101 ,  H01L2224/8089520130101 ,  H01L24/80 ,  H01L2224/0824520130101 ,  H01L2224/0822520130101 ,  H01L24/08 ,  H01L2224/0420130101 ,  H01L2224/034520130101 ,  H01L24/03 ,  H01L2224/8000620130101 ,  H01L2224/8300520130101 ,  H01L2224/0823820130101 ,  H01L2224/0825820130101 ,  H01L2224/0555820130101 ,  H01L21/6835 ,  H01L24/06 ,  H01L2224/0618120130101 ,  H01L2924/1204220130101 ,  H01L2224/920220130101 ,  H01L2224/9420130101 ,  H01L24/94 ,  H01L24/92 ,  H01L2224/9214220130101 ,  H01L2224/921220130101 ,  H01L2221/6838120130101 ,  H01L2221/6831820130101 ,  H01L2221/683520130101 ,  H01L2221/6836320130101 ,  H01L2224/80420130101 ,  H01L2224/804920130101 ,  H01L2224/051820130101 ,  H01L2224/0514420130101 ,  H01L2224/0566920130101 ,  H01L2224/0518420130101 ,  H01L2224/0513920130101 ,  H01L2224/0566420130101 ,  H01L2224/0565520130101 ,  H01L2224/0563920130101 ,  H01L2224/0516420130101 ,  H01L2224/0516620130101 ,  H01L2224/0516920130101 ,  H01L2224/056820130101 ,  H01L2224/0568420130101 ,  H01L2224/0566620130101 ,  H01L2224/0515520130101 ,  H01S5/0203 ,  H01L2224/29120130101

摘要： A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.

公开(公告)号：EP3391409B1

公开(公告)日：2024-05-22

申请号：EP16876775.4

申请日：2016-12-16

IPC分类号： H01L23/485 ,  H01L21/48 ,  H01L21/60 ,  H01L25/065

CPC分类号： H01L25/0657 ,  H01L2225/0655520130101 ,  H01L25/50 ,  H01L2225/0651320130101 ,  H01L2225/0659320130101 ,  H01L2224/0823820130101 ,  H01L2224/0823720130101 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L2224/0554120130101 ,  H01L2224/0555120130101 ,  H01L2224/0555220130101 ,  H01L2224/0557120130101 ,  H01L2224/0557320130101 ,  H01L2224/0557820130101 ,  H01L2224/05620130101 ,  H01L2224/0563920130101 ,  H01L2224/0564420130101 ,  H01L2224/0564720130101 ,  H01L2224/0565520130101 ,  H01L2224/0568420130101 ,  H01L2224/080720130101 ,  H01L2224/0814620130101 ,  H01L2224/8089520130101 ,  H01L2224/8089620130101 ,  H01L2224/0811120130101 ,  H01L2224/0812120130101 ,  H01L2224/0814820130101 ,  H01L2224/8003520130101 ,  H01L2224/8093520130101 ,  H01L2224/0420130101 ,  H01L2224/0566420130101 ,  H01L2224/8001320130101 ,  H01L2224/0512420130101 ,  H01L2224/0507320130101 ,  H01L2224/8001120130101 ,  H01L2224/0560920130101 ,  H01L2224/0561120130101 ,  H01L2224/8081520130101 ,  H01L2224/0568720130101 ,  H01L2224/0568820130101 ,  H01L2224/0341620130101 ,  H01L2224/03520130101 ,  H01L24/03 ,  H01L2224/0360220130101 ,  H01L2224/0361620130101 ,  H01L2224/0346420130101 ,  H01L2224/0361220130101 ,  H01L2224/0515520130101 ,  H01L2924/38120130101 ,  H01L2924/351220130101 ,  H01L2224/0566920130101 ,  H01L2224/0514420130101 ,  H01L2224/803420130101 ,  H01L2224/8098620130101 ,  H01L2224/0556920130101 ,  H01L2224/0814520130101