公开(公告)号：EP2782123A4

公开(公告)日：2016-01-06

申请号：EP12849763

申请日：2012-11-08

申请人： TANAKA PRECIOUS METAL IND

发明人： OGASHIWA TOSHINORI ,  KURITA MASAAKI ,  NISHIMORI TAKASHI ,  KANEHIRA YUKIO

IPC分类号： H01L21/60

CPC分类号： H01L21/4814 ,  B22F7/08 ,  B23K35/007 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/322 ,  B23K2035/008 ,  B23K2201/40 ,  B32B15/018 ,  C22C5/02 ,  C22C5/04 ,  C23C18/165 ,  C25D7/00 ,  H01L21/71 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/03003 ,  H01L2224/031 ,  H01L2224/0312 ,  H01L2224/03334 ,  H01L2224/0401 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/0567 ,  H01L2224/05671 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/1112 ,  H01L2224/11334 ,  H01L2224/11505 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/94 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T428/12056 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01046 ,  H01L2924/00012

公开(公告)号：EP3012047A4

公开(公告)日：2017-06-14

申请号：EP13887342

申请日：2013-06-19

申请人： SENJU METAL INDUSTRY CO

发明人： KAWASAKI HIROYOSHI ,  HASHIMOTO TOMOHIKO ,  IKEDA ATSUSHI ,  ROPPONGI TAKAHIRO ,  SOMA DAISUKE ,  SATO ISAMU ,  KAWAMATA YUJI

IPC分类号： B22F1/00 ,  B22F1/02 ,  B23K35/02 ,  B23K35/14 ,  B23K35/26 ,  B23K35/30 ,  C22C9/00 ,  C22C13/00 ,  C22C43/00 ,  H01L21/60 ,  H01L23/00 ,  H01L23/498 ,  H01L23/556 ,  H05K3/34

CPC分类号： H01L24/13 ,  B22F1/025 ,  B23K35/0244 ,  B23K35/26 ,  B23K35/262 ,  B23K35/302 ,  C22C9/00 ,  C22C13/00 ,  C22C43/00 ,  H01L23/49816 ,  H01L23/556 ,  H01L24/11 ,  H01L24/14 ,  H01L2224/111 ,  H01L2224/1112 ,  H01L2224/13014 ,  H01L2224/13016 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13347 ,  H01L2224/13411 ,  H01L2224/13611 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2924/1434 ,  H01L2924/3841 ,  H05K3/3457 ,  H05K2203/041 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01049 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01027 ,  H01L2924/01051 ,  H01L2924/01032 ,  H01L2924/01015 ,  H01L2924/01026 ,  H01L2924/01079 ,  H01L2924/01092 ,  H01L2924/0109 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01048 ,  H01L2924/01016 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/0103

摘要： To provide a Cu core ball that prevents any soft errors and decreases any connection failure. A solder plating film formed on a surface of a Cu ball is an Sn solder plating film or is made of lead-free solder alloy, a principal ingredient of which is Sn. The solder plating film contains U content of 5 ppb or less and Th content of 5 ppb or less. The Cu ball includes purity of not less than 99.9 % through not more than 99.995%. Pb and/or Bi contents therein are a total of 1 ppm or more. A sphericity thereof is 0.95 or more. The obtained Cu core ball has ± dose of 0.0200 cph/cm 2 or less.

摘要翻译： 提供一个铜芯球，防止任何软错误并减少任何连接失败。 在Cu球表面上形成的焊料镀膜是Sn焊料镀膜，或者由主要成分为Sn的无铅焊料合金制成。 该镀锡膜包含5ppb或更少的U含量和5ppb或更少的Th含量。 Cu球的纯度不低于99.9％，不超过99.995％。 其中Pb和/或Bi含量总计为1ppm或更多。 球形度为0.95以上。 所获得的Cu芯球的剂量为±0.0200cph / cm 2或更小。

公开(公告)号：EP3012047A1

公开(公告)日：2016-04-27

申请号：EP13887342.7

申请日：2013-06-19

申请人： SENJU METAL INDUSTRY CO., LTD.

发明人： KAWASAKI Hiroyoshi ,  HASHIMOTO Tomohiko ,  IKEDA Atsushi ,  ROPPONGI Takahiro ,  SOMA Daisuke ,  SATO Isamu ,  KAWAMATA Yuji

IPC分类号： B22F1/00 ,  B22F1/02 ,  B23K35/14 ,  B23K35/26 ,  C22C13/00 ,  H01L21/60 ,  H05K3/34

CPC分类号： H01L24/13 ,  B22F1/025 ,  B23K35/0244 ,  B23K35/26 ,  B23K35/262 ,  B23K35/30 ,  B23K35/302 ,  C22C9/00 ,  C22C13/00 ,  C22C43/00 ,  C23C28/021 ,  H01L23/49816 ,  H01L23/556 ,  H01L24/11 ,  H01L24/14 ,  H01L2224/111 ,  H01L2224/1112 ,  H01L2224/13014 ,  H01L2224/13016 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13347 ,  H01L2224/13411 ,  H01L2224/13611 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2924/1434 ,  H01L2924/3841 ,  H05K3/3457 ,  H05K2203/041 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01049 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01027 ,  H01L2924/01051 ,  H01L2924/01032 ,  H01L2924/01015 ,  H01L2924/01026 ,  H01L2924/01079 ,  H01L2924/01092 ,  H01L2924/0109 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01048 ,  H01L2924/01016 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/0103

摘要： To provide a Cu core ball that prevents any soft errors and decreases any connection failure.
A solder plating film formed on a surface of a Cu ball is an Sn solder plating film or is made of lead-free solder alloy, a principal ingredient of which is Sn. The solder plating film contains U content of 5 ppb or less and Th content of 5 ppb or less. The Cu ball includes purity of not less than 99.9 % through not more than 99.995%. Pb and/or Bi contents therein are a total of 1 ppm or more. A sphericity thereof is 0.95 or more. The obtained Cu core ball has α dose of 0.0200 cph/cm 2 or less.

摘要翻译： 提供防止任何软错误并减少任何连接故障的铜芯球。 在Cu球的表面形成的焊锡镀膜是Sn焊锡镀膜，或者是由Sn的主要成分的无铅焊料合金构成。 焊料镀膜含有5ppb以下的U含量和5ppb以下的Th含量。 Cu球的纯度不低于99.9％，不超过99.995％。 其中Pb和/或Bi含量总共为1ppm以上。 其球形度为0.95以上。 得到的Cu芯球的剂量为0.0200cph / cm 2以下。

公开(公告)号：EP2645409A4

公开(公告)日：2016-01-06

申请号：EP11843493

申请日：2011-11-18

申请人： TANAKA PRECIOUS METAL IND

发明人： OGASHIWA TOSHINORI ,  KURITA MASAAKI ,  NISHIMORI TAKASHI ,  KANEHIRA YUKIO

IPC分类号： H01L21/60

CPC分类号： H01L21/4885 ,  B22F7/08 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/322 ,  B23K2201/40 ,  B81C1/00095 ,  B81C1/00373 ,  B81C2201/0188 ,  B81C2201/0194 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/03003 ,  H01L2224/031 ,  H01L2224/0312 ,  H01L2224/03334 ,  H01L2224/0401 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/0567 ,  H01L2224/05671 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/1112 ,  H01L2224/11334 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/94 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/11

摘要： The present invention provides a transfer substrate for transferring a metal wiring material to a transfer-receiving object, the transfer substrate comprising a substrate, at least one metal wiring material formed on the substrate and an underlying metal film formed between the substrate and the metal wiring material, wherein the metal wiring material is a molded article prepared by sintering, e.g., gold powder having a purity of 99.9% by weight or more and an average particle size of 0.01 µm to 1.0 µm and the underlying metal film is composed of a metal such as gold or an alloy. The transfer substrate is capable of transferring a metal wiring material to the transfer-receiving object even at a temperature for heating the transfer-receiving object of 80 to 300°C.

公开(公告)号：EP3012047B1

公开(公告)日：2018-11-21

申请号：EP13887342.7

申请日：2013-06-19

申请人： SENJU METAL INDUSTRY CO., LTD.

发明人： KAWASAKI Hiroyoshi ,  HASHIMOTO Tomohiko ,  IKEDA Atsushi ,  ROPPONGI Takahiro ,  SOMA Daisuke ,  SATO Isamu ,  KAWAMATA Yuji

IPC分类号： B22F1/00 ,  B22F1/02 ,  B23K35/14 ,  B23K35/26 ,  C22C13/00 ,  H01L21/60 ,  H05K3/34 ,  B23K35/30 ,  B23K35/02 ,  C22C9/00 ,  C22C43/00 ,  H01L23/498 ,  H01L23/556 ,  H01L23/00

CPC分类号： H01L24/13 ,  B22F1/025 ,  B23K35/0244 ,  B23K35/26 ,  B23K35/262 ,  B23K35/30 ,  B23K35/302 ,  C22C9/00 ,  C22C13/00 ,  C22C43/00 ,  C23C28/021 ,  H01L23/49816 ,  H01L23/556 ,  H01L24/11 ,  H01L24/14 ,  H01L2224/111 ,  H01L2224/1112 ,  H01L2224/13014 ,  H01L2224/13016 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13347 ,  H01L2224/13411 ,  H01L2224/13611 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2924/1434 ,  H01L2924/3841 ,  H05K3/3457 ,  H05K2203/041 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01049 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01027 ,  H01L2924/01051 ,  H01L2924/01032 ,  H01L2924/01015 ,  H01L2924/01026 ,  H01L2924/01079 ,  H01L2924/01092 ,  H01L2924/0109 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01048 ,  H01L2924/01016 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/0103

摘要： To provide a Cu core ball that prevents any soft errors and decreases any connection failure. A solder plating film formed on a surface of a Cu ball is an Sn solder plating film or is made of lead-free solder alloy, a principal ingredient of which is Sn. The solder plating film contains U content of 5 ppb or less and Th content of 5 ppb or less. The Cu ball includes purity of not less than 99.9 % through not more than 99.995%. Pb and/or Bi contents therein are a total of 1 ppm or more. A sphericity thereof is 0.95 or more. The obtained Cu core ball has ± dose of 0.0200 cph/cm 2 or less.

公开(公告)号：EP2782123A1

公开(公告)日：2014-09-24

申请号：EP12849763.3

申请日：2012-11-08

申请人： Tanaka Kikinzoku Kogyo K.K.

发明人： OGASHIWA, Toshinori ,  KURITA, Masaaki ,  NISHIMORI, Takashi ,  KANEHIRA, Yukio

IPC分类号： H01L21/60 ,  H01L23/12 ,  H05K1/09 ,  H05K3/20

CPC分类号： H01L21/4814 ,  B22F7/08 ,  B23K35/007 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/322 ,  B23K2035/008 ,  B23K2201/40 ,  B32B15/018 ,  C22C5/02 ,  C22C5/04 ,  C23C18/165 ,  C25D7/00 ,  H01L21/71 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/03003 ,  H01L2224/031 ,  H01L2224/0312 ,  H01L2224/03334 ,  H01L2224/0401 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/0567 ,  H01L2224/05671 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/1112 ,  H01L2224/11334 ,  H01L2224/11505 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/94 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T428/12056 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01046 ,  H01L2924/00012

摘要： A transfer substrate for transferring a metal wiring material to a transfer target including a substrate, at least one metal wiring material formed on the substrate, at least one coating layer formed on a surface of the metal wiring material, and an underlying metal film formed between the substrate and the metal wiring material, in which the metal wiring material is a compact formed by sintering metal powder such as gold powder having a purity of 99.9 wt% or more and an average particle size of 0.01 µm to 1.0 µm, and the coating layer is a predetermined metal such as gold or an alloy having a different composition from that of the metal wiring material and has a total thickness of 1 µm or less, and the metal underlying film is made of a predetermined metal such as gold or an alloy. The transfer substrate can lower heating temperature on the transfer target side.

公开(公告)号：EP2645409A1

公开(公告)日：2013-10-02

申请号：EP11843493.5

申请日：2011-11-18

申请人： Tanaka Kikinzoku Kogyo K.K.

发明人： OGASHIWA, Toshinori ,  KURITA, Masaaki ,  NISHIMORI, Takashi ,  KANEHIRA, Yukio

IPC分类号： H01L21/60

CPC分类号： H01L21/4885 ,  B22F7/08 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/322 ,  B23K2101/40 ,  B81C1/00095 ,  B81C1/00373 ,  B81C2201/0188 ,  B81C2201/0194 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/03003 ,  H01L2224/031 ,  H01L2224/0312 ,  H01L2224/03334 ,  H01L2224/0401 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/0567 ,  H01L2224/05671 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/1112 ,  H01L2224/11334 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/94 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/11

摘要： The present invention provides a transfer substrate for transferring a metal wiring material to a transfer-receiving object, the transfer substrate comprising a substrate, at least one metal wiring material formed on the substrate and an underlying metal film formed between the substrate and the metal wiring material, wherein the metal wiring material is a molded article prepared by sintering, e.g., gold powder having a purity of 99.9% by weight or more and an average particle size of 0.01 µm to 1.0 µm and the underlying metal film is composed of a metal such as gold or an alloy. The transfer substrate is capable of transferring a metal wiring material to the transfer-receiving object even at a temperature for heating the transfer-receiving object of 80 to 300°C.

摘要翻译： 本发明提供了一转印衬底转移环的金属布线材料到转印接收对象，包括：基板上的转印用基板中，至少一个金属布线的材料形成的基材和对底层金属膜形成的基板和金属布线之间 材料，worin金属布线材料是通过烧结制备的模制品，例如，具有按重量计以上且上的0点01微米至1.0微米的平均粒径和底层金属电影的纯度99.9％的金粉末是由金属的 ：诸如金或合金制成。 转印基板能够传递环的金属布线材料到转印接收对象的甚至在温度为80转印接收对象加热至300℃