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    VERFAHREN ZUM HERSTELLEN EINER VORRICHTUNG MIT EINER DREIDIMENSIONALEN MAGNETISCHEN STRUKTUR
    3.
    发明公开
    VERFAHREN ZUM HERSTELLEN EINER VORRICHTUNG MIT EINER DREIDIMENSIONALEN MAGNETISCHEN STRUKTUR 审中-公开

    公开(公告)号：EP3234968A1

    公开(公告)日：2017-10-25

    申请号：EP15816399.8

    申请日：2015-12-11

    Applicant: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

    Inventor： LISEC, Thomas ,  QUENZER, Hans-Joachim ,  REIMER, Tim

    IPC: H01F41/04 ,  B81C1/00 ,  H01F41/16 ,  H01F41/30

    CPC classification number: H01F1/06 ,  B81B2201/034 ,  B81B2201/042 ,  B81C1/00126 ,  B81C2201/0188 ,  G01R33/38 ,  G01R33/3802 ,  G02B26/085 ,  G02B26/101 ,  H01F10/08 ,  H01F21/06 ,  H01F41/046 ,  H01F41/16 ,  H01F41/301 ,  H01F41/32 ,  H01F2007/068 ,  H02K15/02 ,  H02K33/16

    Abstract: The invention relates to a method for producing a device (120) having a three-dimensional magnetic structure (132), comprising a step of applying magnetic particles (130) onto or into a carrier element (122), wherein a plurality of hollow spaces that are at least partially connected to one another are formed between the magnetic particles, and wherein the magnetic particles are brought into contact with one another at contact points. The method also comprises a step of joining the magnetic particle at the contact points by coating the assembly formed by magnetic particles and the carrier element, wherein the hollow spaces are penetrated at least partially by the layer generated by the coating. The device comprises a conductor loop assembly (124) on the carrier element or a further carrier element, such that in the event of a current flow through the conductor loop assembly (1), an inductivity of the conductor loop assembly is altered by the three-dimensional magnetic structure, or (2) a force acts on the three-dimensional magnetic structure or the conductor loop assembly via a magnetic field generated by the current flow, or (3) in the event of a change of position of the three-dimensional magnetic structure, a current flow is induced via the conductor loop assembly.

    Abstract translation: 本发明涉及一种用于制造具有三维磁结构（132）的装置（120）的方法，包括将磁性颗粒（130）施加到载体元件（122）上或载体元件（122）中的步骤，其中多个空腔 至少部分彼此连接的所述磁性颗粒形成在所述磁性颗粒之间，并且其中所述磁性颗粒在接触点处彼此接触。 该方法还包括通过涂覆由磁性颗粒和载体元件形成的组件而在接触点处接合磁性颗粒的步骤，其中，中空空间至少部分地被涂层产生的层穿透。 该装置包括在载体元件或另一载体元件上的导体环组件（124），使得在电流流过导体环组件（1）的情况下，导体环组件的感应性被三个 或（2）力通过由电流产生的磁场作用于三维磁结构或导体环组件，或（3）在三维磁结构的位置改变的情况下， 通过导体环组件引起电流流动。

    HERSTELLUNGSVERFAHREN FÜR EIN MIKROMECHANISCHES BAUELEMENT UND ENTSPRECHENDES MIKROMECHANISCHES BAUELEMENT
    5.
    发明公开
    HERSTELLUNGSVERFAHREN FÜR EIN MIKROMECHANISCHES BAUELEMENT UND ENTSPRECHENDES MIKROMECHANISCHES BAUELEMENT 有权
    用于微机械结构及相应的微机械部件

    公开(公告)号：EP2969913A1

    公开(公告)日：2016-01-20

    申请号：EP14710849.2

    申请日：2014-03-12

    Applicant: Robert Bosch GmbH

    Inventor： HEUCK, Friedjof ,  SCHELLING, Christoph

    IPC: B81C1/00

    CPC classification number: B81C1/00619 ,  B81C1/00412 ,  B81C2201/0177 ,  B81C2201/0188

    Abstract: The invention relates to a method for producing a micromechanical component and to a corresponding micromechanical component. The production method comprises the following steps: providing a substrate (1) with a monocrystalline starting layer (1c) which is exposed in structured regions (3a-3e), said structured regions (3a-3e) having an upper face (O) and lateral flanks (F), wherein a catalyst layer (2), which is suitable for promoting a silicon epitaxial growth of the exposed upper face (O) of the structured monocrystalline starting layer (1c), is provided on the upper face (O), and no catalyst layers (2) are provided on the flanks (F); and carrying out a selective epitaxial growth process on the upper face (O) of the monocrystalline starting layer (1c) using the catalyst layer (2) in a reactive gas atmosphere in order to form a micromechanical functional layer (3').

    MIKROMECHANISCHE KOMPONENTE UND VERFAHREN ZU IHRER HERSTELLUNG
    7.
    发明公开
    MIKROMECHANISCHE KOMPONENTE UND VERFAHREN ZU IHRER HERSTELLUNG 审中-公开

    公开(公告)号：EP3174689A1

    公开(公告)日：2017-06-07

    申请号：EP15745164.2

    申请日：2015-07-14

    Applicant: Fraunhofer-ges. zur Förderung der Angewandten Forschung E.V.

    Inventor： SCHIEBEL, Felix ,  EBERL, Christoph ,  BERWIND, Matthew ,  GUMBSCH, Peter

    IPC: B29C67/00 ,  B81C99/00

    CPC classification number: B81C1/00373 ,  B29C64/135 ,  B33Y10/00 ,  B33Y80/00 ,  B81B7/0074 ,  B81B2201/038 ,  B81B2201/047 ,  B81B2203/0315 ,  B81B2203/0392 ,  B81C3/001 ,  B81C99/0095 ,  B81C2201/0188 ,  B81C2203/038

    Abstract: The invention relates to a method for producing micromechanical components (1), wherein a liquid starting material (2) which can be cured by means of irradiation is applied onto a substrate, and a partial volume (21) of the starting material is cured by means of a local irradiation process using a first radiation source in order to produce at least one three-dimensional structure. The three-dimensional structure delimits at least one closed cavity (10), in which at least one part of the liquid starting material (2) is enclosed. The invention further relates to a micromechanical component that contains a liquid starting material (2), which is partly cured by means of irradiation, and at least one cavity (10), in which the liquid starting material (2) is enclosed.

    Abstract translation: 本发明涉及一种用于制造微机械部件（1）的方法，其中通过照射可以固化的液体原料（2）被施加到基板上，并且部分体积（21）的原材料通过 为了产生至少一个三维结构，使用第一辐射源的局部照射过程的装置。 三维结构限定了至少一个封闭空腔（10），其中封闭了液体原料（2）的至少一部分。 本发明还涉及一种微机械部件，该微机械部件含有通过照射而部分固化的液体原料（2）和至少一个封闭液体原料（2）的空腔（10）。

    FREE FORM PRINTING OF SILICON MICRO- AND NANOSTRUCTURES
    8.
    发明公开
    FREE FORM PRINTING OF SILICON MICRO- AND NANOSTRUCTURES 有权
    硅微纳米结构的自由形式的组件

    公开(公告)号：EP2556015A1

    公开(公告)日：2013-02-13

    申请号：EP11766241.1

    申请日：2011-04-05

    Applicant: Niklaus, Frank ,  Fischer, Andreas

    Inventor： Niklaus, Frank ,  Fischer, Andreas

    IPC: B81C99/00 ,  B82Y10/00 ,  B82Y20/00 ,  G01Q90/00 ,  H01L21/20 ,  H01L21/265

    CPC classification number: B81C1/00373 ,  B33Y10/00 ,  B33Y70/00 ,  B81C2201/0143 ,  B81C2201/0188 ,  B82Y20/00

    Abstract: The invention relates to a method of making a three-dimensional structure in semiconductor material. A substrate (20) is provided having at least a surface comprising semiconductor material. Selected areas of the surface of the substrate are to a focused ion beam whereby the ions are implanted in the semiconductor material in said selected areas. Several layers of a material selected from the group consisting of mono-crystalline, poly-crystalline or amorphous semiconductor material, are deposited on the substrate surface and between depositions focused ion beam is used to expose the surface so as to define a three-dimensional structure. Material not part of the final structure (30) defined by the focused ion beam is etched away so as to provide a three-dimensional structure on said substrate (20).

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