公开(公告)号：EP2915190A4

公开(公告)日：2016-09-14

申请号：EP13850327

申请日：2013-10-23

申请人： RAYTHEON CO

发明人： GOOCH ROLAND ,  DIEP BUU ,  KOCIAN THOMAS ALLAN ,  BLACK STEPHEN H ,  KENNEDY ADAM M

IPC分类号： H01L23/48 ,  H01L21/56 ,  H01L23/544

CPC分类号： B81B7/0041 ,  B81B7/007 ,  B81C1/00269 ,  B81C2203/019 ,  H01L23/053 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/27444 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/29011 ,  H01L2224/291 ,  H01L2224/83001 ,  H01L2224/83007 ,  H01L2224/83139 ,  H01L2224/8314 ,  H01L2224/83141 ,  H01L2224/83192 ,  H01L2924/1461 ,  H01L2924/163 ,  H01L2924/00014 ,  H01L2924/014

摘要： A method of forming a wafer level packaged circuit device includes forming a device wafer, the device wafer including a first group of one or more material layers left remaining in a first region of a substrate of the device wafer; and forming a cap wafer configured to be attached to the device wafer, the cap wafer including a second group of one or more material layers left remaining in a second region of a substrate of the cap wafer; wherein a combined thickness of the first and second groups of one or more material layers defines an integrated bond gap control structure upon bonding of the device wafer and the cap wafer.

摘要翻译： 形成晶片级封装电路器件的方法包括形成器件晶片，器件晶片包括留在器件晶片的衬底的第一区域中的第一组一个或多个材料层; 以及形成被配置为附接到所述器件晶片的盖晶片，所述盖晶片包括留在所述盖晶片的衬底的第二区域中的第二组一个或多个材料层; 其中一个或多个材料层的第一组和第二组的组合厚度在结合所述器件晶片和所述盖晶片时限定了整合的键合间隙控制结构。

公开(公告)号：EP2915190B1

公开(公告)日：2018-03-07

申请号：EP13850327.1

申请日：2013-10-23

申请人： Raytheon Company

发明人： GOOCH, Roland ,  DIEP, Buu ,  KOCIAN, Thomas Allan ,  BLACK, Stephen H. ,  KENNEDY, Adam M.

IPC分类号： H01L23/48 ,  H01L21/56 ,  H01L23/544

CPC分类号： B81B7/0041 ,  B81B7/007 ,  B81C1/00269 ,  B81C2203/019 ,  H01L23/053 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/27444 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/29011 ,  H01L2224/291 ,  H01L2224/83001 ,  H01L2224/83007 ,  H01L2224/83139 ,  H01L2224/8314 ,  H01L2224/83141 ,  H01L2224/83192 ,  H01L2924/1461 ,  H01L2924/163 ,  H01L2924/00014 ,  H01L2924/014

摘要： A method of forming a wafer level packaged circuit device includes forming a device wafer, the device wafer including a first group of one or more material layers left remaining in a first region of a substrate of the device wafer; and forming a cap wafer configured to be attached to the device wafer, the cap wafer including a second group of one or more material layers left remaining in a second region of a substrate of the cap wafer; wherein a combined thickness of the first and second groups of one or more material layers defines an integrated bond gap control structure upon bonding of the device wafer and the cap wafer.

公开(公告)号：EP2994935A1

公开(公告)日：2016-03-16

申请号：EP13734099.8

申请日：2013-07-05

申请人： EV Group E. Thallner GmbH

发明人： REBHAN, Bernhard

IPC分类号： H01L21/60 ,  H01L23/488 ,  H01L21/66 ,  H01L21/67

CPC分类号： H01L24/83 ,  H01L22/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/743 ,  H01L2223/54426 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03602 ,  H01L2224/03616 ,  H01L2224/0381 ,  H01L2224/05561 ,  H01L2224/05564 ,  H01L2224/05567 ,  H01L2224/05647 ,  H01L2224/061 ,  H01L2224/274 ,  H01L2224/2741 ,  H01L2224/27444 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/27464 ,  H01L2224/2781 ,  H01L2224/2784 ,  H01L2224/27845 ,  H01L2224/29023 ,  H01L2224/29028 ,  H01L2224/29187 ,  H01L2224/8301 ,  H01L2224/83011 ,  H01L2224/83012 ,  H01L2224/83013 ,  H01L2224/83026 ,  H01L2224/8312 ,  H01L2224/83121 ,  H01L2224/83203 ,  H01L2224/8383 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2224/05552

摘要： The present invention relates to a method for bonding a first at least partly metallic contact area of a first substrate (1, 1') with a second at least partly metallic contact area of a second substrate with the following steps, more particularly the following sequence: - applying to at least one of the contact areas a sacrificial layer (4) which is soluble at least partly, more particularly predominantly, in the material of at least one of the contact areas, - bonding the contact areas with at least partial dissolution of the sacrificial layer (4) in at least one of the contact areas. The contact areas can be arranged over the whole area on a bonding region (3). Alternatively, the contact areas can be formed from a plurality of bonding regions (3') which are surrounded by bulk material (5) or arranged in substrate cavities (2). A liquid (e.g. water) can be used to produce a pre-bond between the substrates.

摘要翻译： 一种用于将第一基板与第二的第一，至少部分是金属的接触面的接合方法中，至少部分金属的第二基片的接触表面，具有以下步骤，爱尤其以下进展：牺牲层的应用中的所有其 至少部分地，爱尤其大部分溶于所述接触表面中的至少一个的所述接触表面中的至少一个，与在接触表面中的至少一个上的至少所述牺牲层的部分解决方案的接触表面的粘结材料。

公开(公告)号：EP2915190A2

公开(公告)日：2015-09-09

申请号：EP13850327.1

申请日：2013-10-23

申请人： Raytheon Company

发明人： GOOCH, Roland ,  DIEP, Buu ,  KOCIAN, Thomas Allan ,  BLACK, Stephen H. ,  KENNEDY, Adam M.

IPC分类号： H01L23/48 ,  H01L21/56 ,  H01L23/544

CPC分类号： B81B7/0041 ,  B81B7/007 ,  B81C1/00269 ,  B81C2203/019 ,  H01L23/053 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/27444 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/29011 ,  H01L2224/291 ,  H01L2224/83001 ,  H01L2224/83007 ,  H01L2224/83139 ,  H01L2224/8314 ,  H01L2224/83141 ,  H01L2224/83192 ,  H01L2924/1461 ,  H01L2924/163 ,  H01L2924/00014 ,  H01L2924/014

摘要： A method of forming a wafer level packaged circuit device includes forming a device wafer, the device wafer including a first group of one or more material layers left remaining in a first region of a substrate of the device wafer; and forming a cap wafer configured to be attached to the device wafer, the cap wafer including a second group of one or more material layers left remaining in a second region of a substrate of the cap wafer; wherein a combined thickness of the first and second groups of one or more material layers defines an integrated bond gap control structure upon bonding of the device wafer and the cap wafer.

公开(公告)号：EP2363373A1

公开(公告)日：2011-09-07

申请号：EP10155251.1

申请日：2010-03-02

申请人： SensoNor Technologies AS

发明人： Elfving, Anders ,  Hoivik, Nils ,  Stark, Birger ,  Wang, Kaiying

IPC分类号： B81C1/00

CPC分类号： B81C1/00269 ,  B81C2203/0118 ,  B81C2203/035 ,  H01L21/50 ,  H01L23/10 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/276 ,  H01L2224/29011 ,  H01L2224/29082 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32145 ,  H01L2224/83007 ,  H01L2224/83193 ,  H01L2224/83204 ,  H01L2224/83207 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/1461 ,  H01L2924/16235 ,  H01L2924/164 ,  Y10T428/12493 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00

摘要： A metal inter-diffusion bonding method comprises providing a stack of a first metal on a surface of both a first wafer and second wafer to be joined together. Said first metal is susceptible to oxidation in air. A layer of a second metal is provided on the first metal and has a melting point lower than that of the first metal. On the top surface of each stack of first metal is the layer of second metal sufficiently thick to both inhibit oxidation of the top surface of the first metal and to ensure that unreacted Sn remains when partners are brought together. A bond is initiated between the first and second wafers by bringing the layers of the second metal on each wafer into contact at a bonding temperature that is below the melting point of the second metal, by applying a bonding force that is sufficient to initiate inter-diffusion at an interface between the layers of the second metal. The bonding temperature is increased whilst applying the bonding force to achieve a desired inter-diffusion at the bond interface, thereby bonding the first and second wafers together, and no pre-treatment of the wafers is required prior to bonding.

摘要翻译： 金属互扩散接合方法包括在要接合在一起的第一晶片和第二晶片的表面上提供第一金属的堆叠。 所述第一金属容易在空气中氧化。 在第一金属上设置第二金属层，其熔点低于第一金属的熔点。 在每堆第一金属的顶表面上的第二金属层足够厚以抑制第一金属的顶表面的氧化，并且确保当合作者聚在一起时未反应的Sn残留。 在第一和第二晶片之间通过使第二金属层在每个晶片上的接合温度低于第二金属的熔点，从而在第一和第二晶片之间引发接合， 在第二金属层之间的界面处的扩散。 接合温度增加，同时施加结合力以在接合界面处实现期望的互扩散，从而将第一和第二晶片结合在一起，并且在结合之前不需要预处理晶片。

公开(公告)号：EP3301706A1

公开(公告)日：2018-04-04

申请号：EP17172555.9

申请日：2013-07-05

申请人： EV Group E. Thallner GmbH

发明人： Rebhan, Bernhard

IPC分类号： H01L21/60 ,  H01L23/488 ,  H01L21/66 ,  H01L21/67

CPC分类号： H01L24/83 ,  H01L22/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/743 ,  H01L2223/54426 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03602 ,  H01L2224/03616 ,  H01L2224/0381 ,  H01L2224/05561 ,  H01L2224/05564 ,  H01L2224/05567 ,  H01L2224/05647 ,  H01L2224/061 ,  H01L2224/274 ,  H01L2224/2741 ,  H01L2224/27444 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/27464 ,  H01L2224/2781 ,  H01L2224/2784 ,  H01L2224/27845 ,  H01L2224/29023 ,  H01L2224/29028 ,  H01L2224/29187 ,  H01L2224/8301 ,  H01L2224/83011 ,  H01L2224/83012 ,  H01L2224/83013 ,  H01L2224/83026 ,  H01L2224/8312 ,  H01L2224/83121 ,  H01L2224/83203 ,  H01L2224/8383 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2224/05552

摘要： Die vorliegende Erfindung betrifft ein Verfahren zum Bonden einer ersten teilweise metallischen Kontaktfläche eines ersten Substrats (1, 1') mit einer zweiten teilweise metallischen Kontaktfläche eines zweiten Substrats mit folgenden Schritten, insbesondere folgendem Ablauf:
- Aufbringen mehrerer ultradünner Opferschichten (4) (vorzugsweise einer festen Opferschicht und einer darauf abgeschiedenen flüssigen Opferschicht, z.B. Wasser) übereinander auf mindestens eine der Kontaktflächen,
- Bonden der Substrate (1, 1'), wobei die Opferschichten (4) während des Bondens im sie umgebenden Material gelöst werden oder am Interface verbraucht werden.
Die Kontaktflächen können aus mehreren Bondbereichen (3') ausgebildet sein, die von Bulkmaterial (5) umgeben oder in Substratkavitäten (2) angeordnet sind.
Die flüssige Opferschicht kann zur Erzeugung eines Pre-Bonds zwischen den Substraten (1, 1') verwendet werden.

摘要翻译： 本发明涉及贴合的第一基板（1，1“）与具有下列步骤的第二衬底的第二部分的金属接触表面的第一部分为金属接触表面的方法，特别是以下序列： - 将多个超薄牺牲（4）层的（优选 固体牺牲层和在其上的液体牺牲层沉积，例如，水）在另一个的上面上的接触表面中的至少一个， - 在基板（1，1“），其中所述牺牲层（4）在周围的材料接合时溶解或消耗在界面处的粘合 ， 接触表面可以由多个通过本体材料包围键合部（3“）的（5）或在Substratkavitäten（2）被布置来形成。 液体牺牲层可用于在衬底（1,1'）之间形成预先结合。

公开(公告)号：EP2740818A1

公开(公告)日：2014-06-11

申请号：EP12195672.6

申请日：2012-12-05

申请人： Atotech Deutschland GmbH

发明人： Walter, Dr. Andreas

IPC分类号： C23C18/18 ,  C23C18/16 ,  C23C18/44 ,  C23C18/54

CPC分类号： H01L33/62 ,  C23C18/1651 ,  C23C18/1844 ,  C23C18/44 ,  C23C18/54 ,  H01L33/005 ,  H01L33/40 ,  H01L2224/03424 ,  H01L2224/03464 ,  H01L2224/05164 ,  H01L2224/27464 ,  H01L2224/27823 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066 ,  H01L2924/00

摘要： The present invention relates to a method for manufacture of wire bondable and solderable surfaces on noble metal electrodes. The noble metal electrodes are activated by depositing a seed layer of palladium or a palladium alloy layer by electroless plating at 60 to 90 °C. Next, an intermediate layer is deposited onto the seed layer followed by deposition of the wire bondable and/or solderable surface finish layer(s) onto the intermediate layer. This method is particularly suitable in the production of optoelectronic devices such as light emitting diodes (LEDs).

摘要翻译： 本发明涉及一种在贵金属电极上制造可焊接和可焊接表面的方法。 贵金属电极通过在60〜90℃下进行化学镀而沉积钯或钯合金层的种子层而被活化。 接下来，将中间层沉积到种子层上，然后将可焊接和/或可焊接的表面光洁度层沉积到中间层上。 该方法特别适用于制造诸如发光二极管（LED）的光电器件。

公开(公告)号：EP2542500A1

公开(公告)日：2013-01-09

申请号：EP11708431.9

申请日：2011-03-01

申请人： SensoNor Technologies AS

发明人： HOIVIK, Nils ,  STARK, Birger ,  ELFING, Anders ,  WANG, Kaiying

IPC分类号： B81C1/00

CPC分类号： B81C1/00269 ,  B81C2203/0118 ,  B81C2203/035 ,  H01L21/50 ,  H01L23/10 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/276 ,  H01L2224/29011 ,  H01L2224/29082 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32145 ,  H01L2224/83007 ,  H01L2224/83193 ,  H01L2224/83204 ,  H01L2224/83207 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/1461 ,  H01L2924/16235 ,  H01L2924/164 ,  Y10T428/12493 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00

摘要： A metal inter-diffusion bonding method comprises providing a stack of a first metal on a surface of both a first wafer and second wafer to be joined together. Said first metal is susceptible to oxidation in air. A layer of a second metal is provided on the first metal and has a melting point lower than that of the first metal. On the top surface of each stack of first metal is the layer of second metal sufficiently thick to both inhibit oxidation of the top surface of the first metal and to ensure that unreacted Sn remains when partners are brought together. A bond is initiated between the first and second wafers by bringing the layers of the second metal on each wafer into contact at a bonding temperature that is below the melting point of the second metal, by applying a bonding force that is sufficient to initiate inter-diffusion at an interface between the layers of the second metal. The bonding temperature is increased whilst applying the bonding force to achieve a desired inter-diffusion at the bond interface, thereby bonding the first and second wafers together, and no pre-treatment of the wafers is required prior to bonding.

公开(公告)号：EP3340294A1

公开(公告)日：2018-06-27

申请号：EP18155856.0

申请日：2013-10-23

申请人： Raytheon Company

发明人： GOOCH, Roland ,  DIEP, Buu ,  KOCIAN, Thomas Allan ,  BLACK, Stephen H. ,  KENNEDY, Adam M.

IPC分类号： H01L23/48 ,  H01L21/56 ,  H01L23/544

CPC分类号： B81B7/0041 ,  B81B7/007 ,  B81C1/00269 ,  B81C2203/019 ,  H01L23/053 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/27444 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/29011 ,  H01L2224/291 ,  H01L2224/83001 ,  H01L2224/83007 ,  H01L2224/83139 ,  H01L2224/8314 ,  H01L2224/83141 ,  H01L2224/83192 ,  H01L2924/1461 ,  H01L2924/163 ,  H01L2924/00014 ,  H01L2924/014

摘要： A method of forming a wafer level packaged circuit device ,the method comprising forming a device wafer, forming a cap wafer,forming a cap wafer, forming,on either, one or more material layers used in the formation of either the cap wafer or the device wafer, and left remaining in a region of a substrate of either the cap wafer or the device wafer, and bonding the cap wafer to the device wafer.

公开(公告)号：EP2740818B1

公开(公告)日：2016-03-30

申请号：EP12195672.6

申请日：2012-12-05

申请人： Atotech Deutschland GmbH

发明人： Walter, Dr. Andreas

IPC分类号： C23C18/18 ,  C23C18/16 ,  C23C18/44 ,  C23C18/54

CPC分类号： H01L33/62 ,  C23C18/1651 ,  C23C18/1844 ,  C23C18/44 ,  C23C18/54 ,  H01L33/005 ,  H01L33/40 ,  H01L2224/03424 ,  H01L2224/03464 ,  H01L2224/05164 ,  H01L2224/27464 ,  H01L2224/27823 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066 ,  H01L2924/00