摘要:
The present invention provides a glass for encapsulating a semiconductor comprising: SiO 2 in an amount of from 20 to 50% by weight; Al 2 O 3 in an amount of from 1 to 12% by weight; B 2 O 3 in an amount of from 6 to 25% by weight; PbO in an amount of from 30 to 55% by weight; Cs 2 O in an amount of from 0.5 to 12% by weight; and Li 2 O, Na 2 O and K 2 O in a total amount of lower than 90 ppm, each based on the total weight of the glass.
摘要:
An optical glass wherein an amount of change in refractive index (Δn: difference in refractive index between a state before radiation and a state after radiation) caused by radiation of laser beam at wavelength of 351nm having average output power of 0.43W, pulse repetition rate of 5kHz andpulse width of 400ns for one hour is 5 ppm or below.. The optical glass comprises a fluorine ingredient and/or a titanium oxide ingredient and/or an arsenic oxide ingredient. The optical glass suffers little change in refractive index by radiation of strong light having wavelengths of 300 nm to 400 nm such as ultraviolet laser.
摘要:
SiO2-Al2O3-RO (where R is a bivalent metal) glass which has a high specific elasticity larger than 36 x 10 Nm/kg or a high Young's Modulus larger than 110 GPa and has a high transition temperature (high heat-resistance) higher than 700 DEG C. A glass substrate which has an excellent surface smoothness (surface roughness Ra