公开(公告)号：EP4455152A1

公开(公告)日：2024-10-30

申请号：EP22925103.8

申请日：2022-12-01

申请人： POSTECH Research and Business Development Foundation

发明人： NOH, Yong-Young ,  LIU, Ao

IPC分类号： C07F7/22 ,  C07F1/00 ,  C01G30/00 ,  H01L29/786 ,  H01L29/66 ,  H10K10/00 ,  H01L29/24

摘要： A perovskite composite comprising antimony trifluoride, an electronic element comprising same, and a preparation method therefor are disclosed. The perovskite composite comprises tin (Sn)-based perovskite and antimony trifluoride (SbF 3 ) so that lead (Pb) is not added thereto, and has a low hole concentration (≤ 10 14 cm -1 ), and thus can be used for an optoelectronic device.

公开(公告)号：EP4409640A1

公开(公告)日：2024-08-07

申请号：EP22765462.1

申请日：2022-08-11

申请人： International Business Machines Corporation

发明人： GAUL, Andrew ,  FROUGIER, Julien ,  XIE, Ruilong ,  GREENE, Andrew ,  WASKIEWICZ, Christopher ,  CHENG, Kangguo

IPC分类号： H01L29/06 ,  H01L29/24 ,  H01L29/778 ,  H01L21/34 ,  H01L29/423 ,  B82Y10/00 ,  B82Y40/00

CPC分类号： H01L29/778 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/42356 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0665

公开(公告)号：EP3410492B1

公开(公告)日：2024-07-31

申请号：EP16895948.4

申请日：2016-03-31

IPC分类号： H01L21/336 ,  H01L29/66 ,  H01L29/423 ,  H01L29/417 ,  H01L29/772 ,  H01L29/10 ,  H01L29/06 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/778 ,  H01L27/088 ,  H01L29/16 ,  H01L29/24 ,  H01L29/786

CPC分类号： H01L29/4236 ,  H01L29/42368 ,  H01L29/66037 ,  H01L29/7831 ,  H01L29/1606 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/24 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78684 ,  H01L29/78696 ,  H01L29/78645 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66742

公开(公告)号：EP4391069A1

公开(公告)日：2024-06-26

申请号：EP23218847.4

申请日：2023-12-20

申请人： Commissariat à l'énergie atomique et aux énergies alternatives

发明人： BARRAUD, Sylvain ,  COQUAND, Rémi ,  REBOH, Shay

IPC分类号： H01L29/06 ,  B82Y10/00 ,  H01L29/08 ,  H01L29/24 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  H01L29/775 ,  H01L29/778 ,  H10B53/30 ,  H10B63/00

CPC分类号： H01L29/42392 ,  H01L29/0673 ,  H10B63/30 ,  H10B63/80 ,  H10B53/30 ,  H01L29/778 ,  H01L29/775 ,  H01L29/24 ,  H01L29/66439 ,  H01L29/66969 ,  H01L29/0847 ,  H01L29/45 ,  B82Y10/00 ,  H01L29/66545 ,  H01L29/42376 ,  H10B51/20 ,  H10B51/30 ,  H01L29/78391

摘要： Dispositif mémoire (100) comprenant un empilement mémoire (158) connecté électriquement en série avec un transistor de sélection, comprenant :
- une couche semi-conductrice (120) dont des premières zones (122) sont superposées et forment un canal ;
- une grille de commande électrostatique (110) et une couche de diélectrique de grille (112) telles que des parties de la couche de diélectrique de grille soient chacune disposée entre une partie (106, 108) de la grille et l'une des premières zones ;
- des espaceurs diélectriques (114) disposés contre des flancs de la grille ;
- des régions de contact (116, 118) couplées électriquement aux premières zones par des deuxièmes zones (124) de la couche de semi-conducteur s'étendant entre les régions de contact et les espaceurs, l'une des régions de contact (118) comprenant l'empilement mémoire ;
et dans lequel les deuxièmes zones forment, avec les premières zones, une couche continue.

公开(公告)号：EP4367722A1

公开(公告)日：2024-05-15

申请号：EP22725130.3

申请日：2022-04-27

申请人： QUALCOMM INCORPORATED

发明人： LI, Xia ,  YANG, Bin ,  BAO, Junjing

IPC分类号： H01L29/778 ,  H01L29/06 ,  H01L27/06 ,  H01L29/24 ,  H01L29/423 ,  H01L21/336 ,  H01L29/786 ,  H01L29/51

CPC分类号： H01L29/778 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/42356 ,  H01L29/517 ,  H01L29/0665 ,  H01L29/78648 ,  H01L29/78696 ,  H01L29/78681 ,  H01L27/092 ,  H01L21/8256 ,  H01L21/823807 ,  H01L21/823828

公开(公告)号：EP4354514A2

公开(公告)日：2024-04-17

申请号：EP23187310.0

申请日：2023-07-24

申请人： Tamura Corporation ,  Novel Crystal Technology, Inc.

发明人： OTSUKA, Fumio

IPC分类号： H01L29/872 ,  H01L29/06 ,  H01L21/425 ,  H01L29/24

CPC分类号： H01L29/8725 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/66969 ,  H01L29/24 ,  H01L21/425 ,  H01L29/0657 ,  H01L29/872 ,  H01L29/0623

摘要： A Schottky barrier diode includes a semiconductor layer of a first conductivity type including a wide-bandgap semiconductor and a trench defining a mesa portion on a first surface thereof, a high-resistance region under the trench of the semiconductor layer, the high-resistance region including an impurity of a second conductivity type different from the first conductivity type, an insulating film or a semiconductor film of the second conductivity type, the insulating film or semiconductor film covering at least a bottom surface among inner surfaces of the trench, an anode electrode on the semiconductor layer through the insulating film or the semiconductor film, the anode electrode being connected to the mesa portion, and a cathode electrode directly or through another layer on a second surface of the semiconductor layer on the opposite side to the first surface.

公开(公告)号：EP4310916A1

公开(公告)日：2024-01-24

申请号：EP23185774.9

申请日：2023-07-17

申请人： Samsung Electronics Co., Ltd.

发明人： SEOL, Minsu ,  KWON, Junyoung ,  NAM, Jitak ,  YOO, Minseok

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/24 ,  H01L29/423 ,  H01L21/336 ,  H01L29/775 ,  H01L29/778 ,  B82Y10/00

摘要： A semiconductor device may include at least one first two-dimensional material layer; a source electrode and a drain electrode that are respectively on both sides of the at least one first two-dimensional material layer; second two-dimensional material layers respectively on a side of the source electrode and a side of the drain electrode and connected to the at least one first two-dimensional material layer; a gate insulating layer surrounding the at least one first two-dimensional material layer; and a gate electrode on the gate insulating layer.

公开(公告)号：EP4272248A1

公开(公告)日：2023-11-08

申请号：EP21916136.1

申请日：2021-10-19

申请人： Applied Materials, Inc.

发明人： BATRA, Shubneesh ,  SEE, Guan Huei

IPC分类号： H01L21/8234 ,  H01L29/66 ,  H01L29/49 ,  H01L29/417 ,  H01L29/24 ,  H01L23/528 ,  H01L23/31

公开(公告)号：EP4199115A1

公开(公告)日：2023-06-21

申请号：EP21215532.9

申请日：2021-12-17

申请人： IMEC VZW

发明人： SMETS, Quentin ,  RADU, Iuliana ,  SCHRAM, Tom ,  AHMED, Zubair

IPC分类号： H01L29/778 ,  H01L29/417 ,  H01L21/336 ,  H01L29/16 ,  H01L29/41 ,  B82Y10/00 ,  H01L29/423 ,  H01L29/24

摘要： According to an aspect of the present inventive concept there is provided a 2D transistor device (100). The 2D transistor device (100) comprises: a 2D semiconductor layer (110) comprising a source-side extension portion (112), a drain-side extension portion (116) and a channel portion (114) extending between the extension portions (112, 116) along a channel direction (300); a gate electrode (120) arranged along and being coextensive with the channel portion (114); a source-side 2D metal contact (132) arranged in abutment with the source-side extension portion (112) and spaced apart from the gate electrode (120) along the channel direction (300); and a drain-side 2D metal contact (136) arranged in abutment with the drain-side extension portion (116) and spaced apart from the gate electrode (120) along the channel direction (300).
A method (150) for forming such a device (100) and a system (200) comprising at least two such devices (100) are also provided.

公开(公告)号：EP4167291A1

公开(公告)日：2023-04-19

申请号：EP21905343.6

申请日：2021-11-02

申请人： BOE Technology Group Co., Ltd. ,  South China University of Technology

发明人： YUAN, Guangcai ,  LAN, Linfeng ,  LIU, Fengjuan ,  NING, Ce ,  HU, Hehe ,  WANG, Fei ,  PENG, Junbiao

IPC分类号： H01L29/24 ,  H01L29/786 ,  H01L21/34 ,  C23C14/34 ,  C23C14/08

摘要： A metal oxide semiconductor material, comprising: a semiconductor matrix material; and at least one rare earth compound doped in the semiconductor matrix material. The general formula of each rare earth compound is represented as (M FD ) a A b . In the general formula (M FD ) a A b , M FD is selected from one of rare earth elements capable of generating an f-d transition, A is selected from an element capable of causing a wavelength band of an absorption spectrum of the corresponding M FD having an f-d transition to be redshifted into a visible light wavelength band range, a is the number of atoms of the element M FD in the general formula (M FD ) a A b , and b is the number of atoms of the element A.